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11. 发明授权

US08129208B2 n-Type conductive aluminum nitride semiconductor crystal and manufacturing method thereof 有权
标题翻译： n型导电氮化铝半导体晶体及其制造方法
公开(公告)号：US08129208B2
公开(公告)日：2012-03-06
申请号：US12526196
申请日：2008-02-02
申请人： Akinori Koukitu , Yoshinao Kumagai , Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi
发明人： Akinori Koukitu , Yoshinao Kumagai , Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi
IPC分类号： H01L21/02
CPC分类号： C30B25/02 , C30B29/403 , H01L21/02389 , H01L21/02403 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/007
摘要： This invention provides a self supporting substrate which consists of a n-type conductive aluminum nitride semiconductor crystal and is useful for manufacturing the vertical conductive type AlN semiconductor device. The n-type conductive aluminum nitride semiconductor crystal, by which the self supporting substrate is made up, contains Si atom at a concentration of 1×1018 to 5×1020 cm−3 is substantially free of halogen atoms and substantially does not absorb the light having the energy of not more than 5.9 eV. The self supporting substrate can be obtained by a method comprising the steps of forming an AlN crystal layer on a single crystal substrate such as a sapphire by the HVPE method, preheating the obtained substrate having the AlN crystal layer to a temperature of 1,200° C. or more, forming a second layer consisting of the n-type conductive aluminum nitride semiconductor crystal is formed on the AlN crystal layer in high rate by the HVPE method and separating the second layer from the obtained laminate.
摘要翻译：本发明提供一种由n型导电氮化铝半导体晶体组成的自支撑衬底，并且可用于制造垂直导电型AlN半导体器件。构成自支撑衬底的n型导电氮化铝半导体晶体含有浓度为1×1018至5×1020cm-3的Si原子，基本上不含卤素原子并且基本上不吸收光能量不超过5.9 eV。自支撑基板可以通过以下方法获得：通过HVPE法在诸如蓝宝石的单晶衬底上形成AlN晶体层的步骤，将获得的具有AlN晶体层的衬底预热到1200℃的温度。以上，通过HVPE法以高速率在AlN结晶层上形成由n型导电性氮化铝半导体晶体构成的第二层，并将第二层与得到的层叠体分离。

12. 发明申请

US20110281197A1 ANION-EXCHANGE MEMBRANE AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：阴离子交换膜及其制造方法
公开(公告)号：US20110281197A1
公开(公告)日：2011-11-17
申请号：US13129259
申请日：2009-11-12
申请人： Yusuke Daikoku , Takenori Isomura , Kenji Fukuta , Hiroyuki Yanagi , Masao Yamaguchi
发明人： Yusuke Daikoku , Takenori Isomura , Kenji Fukuta , Hiroyuki Yanagi , Masao Yamaguchi
IPC分类号： H01M8/10 , B01J41/12
CPC分类号： C08J5/2275 , C08F226/04 , C08J2379/04 , H01B1/122 , H01M8/1023 , H01M8/103 , H01M8/1039 , H01M8/1044 , H01M8/1058 , H01M8/1072 , Y02P70/56
摘要： Disclosed is an anion-exchange membrane which does not easily deteriorate even when used at high temperatures in a strong alkaline atmosphere. Also disclosed is a method for producing the anion-exchange membrane. The anion-exchange membrane is a microporous membrane which is composed of a water-insoluble resin and an anion-exchange resin filling the pores of the microporous membrane. The anion-exchange resin is composed of an anion-exchange resin wherein a quaternary ammonium salt group serving as an anion-exchange group is directly bonded to an aliphatic hydrocarbon chain, said anion-exchange resin being obtained by polymerizing and crosslinking a monomer composition which contains a crosslinking agent and a monomer component including a diallyl ammonium salt.
摘要翻译：公开了即使在强碱性气氛中在高温下使用也不容易劣化的阴离子交换膜。还公开了阴离子交换膜的制造方法。阴离子交换膜是由非水溶性树脂和填充微孔膜的孔的阴离子交换树脂构成的微孔膜。阴离子交换树脂由阴离子交换树脂构成，其中用作阴离子交换基团的季铵盐基团直接键合到脂族烃链上，所述阴离子交换树脂通过使单体组合物聚合和交联而获得，含有交联剂和包含二烯丙基铵盐的单体组分。

13. 发明授权

US07947577B2 Method and apparatus for producing group III nitride 失效
标题翻译：制备III族氮化物的方法和装置
公开(公告)号：US07947577B2
公开(公告)日：2011-05-24
申请号：US12440413
申请日：2007-08-03
申请人： Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi , Manabu Harada , Yasunori Hirata , Keisuke Kondo
发明人： Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi , Manabu Harada , Yasunori Hirata , Keisuke Kondo
IPC分类号： H01L21/20 , C23C16/00
CPC分类号： C23C16/303 , C23C16/45512 , C23C16/45514 , C23C16/45519 , C23C16/4557 , C30B25/02 , C30B25/14 , C30B25/16 , C30B29/403 , H01L21/0254 , H01L21/0262
摘要： A method of producing a group III nitride such as aluminum nitride, comprising the step of reacting a group III halide gas such as aluminum trichloride gas with a nitrogen source gas such as ammonia gas in a growth chamber to grow a group III nitride on a substrate held in the growth chamber, wherein the method further comprises premixing together the group III halide gas and the nitrogen source gas to obtain a mixed gas and then introducing the mixed gas into the growth chamber without forming a deposit in the mixed gas substantially to be reacted each other.For the growth of a group III nitride such as an aluminum-based group III nitride by HVPE, there are provided a method of producing the group III nitride having as high quality as that obtained by the method of the prior art at a high yield and an apparatus used in the method.
摘要翻译：一种生产III族氮化物如氮化铝的方法，包括在生长室中使诸如三氯化铝气体的III族卤化物气体与诸如氨气的氮源气体反应以在衬底上生长III族氮化物的步骤保持在生长室中，其中所述方法还包括将III族卤化物气体和氮源气体一起预混合以获得混合气体，然后将混合气体引入生长室中，而不在基本上被反应的混合气体中形成沉积物彼此。对于通过HVPE的诸如铝基III族氮化物的III族氮化物的生长，提供了以高产率制备具有如现有技术方法获得的高质量的III族氮化物的方法，该方法中使用的装置。

14. 发明申请

US20100320462A1 N-TYPE CONDUCTIVE ALUMINUM NITRIDE SEMICONDUCTOR CRYSTAL AND MANUFACTURING METHOD THEREOF 有权
标题翻译： N型导电氮化镓半导体晶体及其制造方法
公开(公告)号：US20100320462A1
公开(公告)日：2010-12-23
申请号：US12526196
申请日：2008-02-02
申请人： Akinori Koukitu , Yoshinao Kumagai , Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi
发明人： Akinori Koukitu , Yoshinao Kumagai , Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi
IPC分类号： H01L29/06 , H01L29/20 , H01L21/203
CPC分类号： C30B25/02 , C30B29/403 , H01L21/02389 , H01L21/02403 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/007
摘要： This invention provides a selfsupporting substrate which consists of a n-type conductive aluminum nitride semiconductor crystal and is useful for manufacturing the vertical conductive type AlN semiconductor device.The n-type conductive aluminum nitride semiconductor crystal, by which the selfsupporting substrate is made up, contains Si atom at a concentration of 1×1018 to 5×1020 cm−3, is substantially free from halogen atoms, and substantially does not absorb the light having the energy of not more than 5.9 eV. The selfsupporting substrate can be obtained by a method comprising the steps of forming an AlN crystal layer on a single crystal substrate such as a sapphire by the HVPE method, preheating the obtained substrate having the AlN crystal layer to a temperature of 1,200° C. or more, forming a second layer consisting of the n-type conductive aluminum nitride semiconductor crystal is formed on the AlN crystal layer in high rate by the HVPE method and separating the second layer from the obtained laminate.
摘要翻译：本发明提供一种由n型导电氮化铝半导体晶体组成的自支撑衬底，并且可用于制造垂直导电型AlN半导体器件。构成自支撑衬底的n型导电氮化铝半导体晶体含有浓度为1×1018至5×1020cm-3的Si原子，基本上不含卤素原子，并且基本上不吸收能量不超过5.9 eV的光。可以通过以下方法获得自支撑衬底：通过HVPE法在诸如蓝宝石的单晶衬底上形成AlN晶体层的步骤，将获得的具有AlN晶体层的衬底预热至1200℃的温度，或通过HVPE法在AlN晶体层上高效率地形成由n型导电氮化铝半导体晶体构成的第二层，并将第二层与所得层压体分离。

15. 发明授权

US08926752B2 Method of producing a group III nitride crystal 有权
标题翻译：制造III族氮化物晶体的方法
公开(公告)号：US08926752B2
公开(公告)日：2015-01-06
申请号：US12526685
申请日：2008-02-27
申请人： Akinori Koukitu , Yoshinao Kumagai , Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi
发明人： Akinori Koukitu , Yoshinao Kumagai , Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi
IPC分类号： C30B25/00 , C30B29/40 , C30B25/10 , C30B25/18
CPC分类号： C30B29/403 , C30B25/10 , C30B25/18
摘要： There is provided a method capable of obtaining an aluminum-based group III nitride crystal layer having a smooth surface and high crystallinity by employing only HVPE in which inexpensive raw materials can be used to reduce production costs and high-speed film formation is possible without employing MOVPE.To produce a group III nitride crystal by HVPE comprising the step of growing a group III nitride crystal layer by vapor-phase growth on a single crystal substrate by contacting the heated single crystal substrate with a raw material gas containing a group III halide and a compound having a nitrogen atom, the group III nitride crystal is grown by vapor-phase growth on the single crystal substrate heated at a temperature of 1,000° C. or more and less than 1,200° C. to form an intermediate layer and then, a group III nitride crystal is further grown by vapor-phase growth on the intermediate layer on the substrate heated at a temperature of 1,200° C. or higher.
摘要翻译：提供了一种能够通过仅使用HVPE来获得具有光滑表面和高结晶度的铝基III族氮化物晶体层的方法，其中可以使用便宜的原料来降低生产成本，并且可以在不使用高速成膜的情况下进行高速成膜 MOVPE。为了通过HVPE制造III族氮化物晶体，包括通过使加热的单晶衬底与含有III族卤化物和化合物的原料气体接触，在单晶衬底上通过气相生长生长III族氮化物晶体层的步骤具有氮原子的情况下，在1000℃以上且小于1200℃的温度加热的单晶衬底上通过气相生长生长III族氮化物晶体，形成中间层，通过在1200℃以上的温度下加热的基板上的中间层上气相生长进一步生长III族氮化物晶体。

16. 发明申请

US20110244367A1 SEPARATION MEMBRANE FOR FUEL CELL, AND METHOD FOR PRODUCTION THEREOF 审中-公开
标题翻译：用于燃料电池的分离膜及其生产方法
公开(公告)号：US20110244367A1
公开(公告)日：2011-10-06
申请号：US13133431
申请日：2009-06-17
申请人： Yuki Watahiki , Kazuyuki Sadasue , Kenji Fukuta , Hiroyuki Yanagi
发明人： Yuki Watahiki , Kazuyuki Sadasue , Kenji Fukuta , Hiroyuki Yanagi
IPC分类号： H01M8/10
CPC分类号： H01M8/1025 , H01M8/1004 , H01M8/1023 , H01M8/1053 , H01M8/106 , Y02P70/56
摘要： Disclosed is a membrane for a fuel cell, which comprises: a polymer electrolyte membrane which comprises a cross-linked anion-exchange resin having a strongly basic anion-exchange group such as a quaternary ammonium salt group, a quaternary pyridinium salt group and a quaternary imidazolium salt group; and a polymer which is attached on at least one surface of the polymer electrolyte membrane and has a weakly acidic group such as a polyacrylic acid. Also disclosed is a method for producing the membrane.
摘要翻译：公开了一种用于燃料电池的膜，其包括：高分子电解质膜，其包含具有强碱性阴离子交换基团的交联阴离子交换树脂，例如季铵盐基团，季吡啶鎓盐基团和季铵盐咪唑盐组; 以及附着在聚合物电解质膜的至少一个表面上并具有弱酸性基团如聚丙烯酸的聚合物。还公开了一种膜的制造方法。

17. 发明申请

US20110104590A1 Method for Producing Ion Conductivity Providing Agent for Catalyst Electrode Layer in Anion-Exchange Membrane Type Fuel Cell 审中-公开
标题翻译：在阴离子交换膜型燃料电池中生产催化剂电极层的离子导电性提供剂的方法
公开(公告)号：US20110104590A1
公开(公告)日：2011-05-05
申请号：US12995698
申请日：2009-06-02
申请人： Kenji Fukuta , Shin Watanbe , Yoshinobu Yamashita , Hiroyuki Yanagi
发明人： Kenji Fukuta , Shin Watanbe , Yoshinobu Yamashita , Hiroyuki Yanagi
IPC分类号： H01M8/10 , H01B1/12 , H01M4/88
CPC分类号： H01M4/8663 , H01M8/1018
摘要： Disclosed is a method for producing an ion-conductivity providing agent for a catalyst electrode layer of an anion-exchange membrane type fuel cell comprising: producing anionic conductive resin including a quaternary onium base having a halogeno ion as its counterion, and bringing the halogen type anionic conductive resin into contact with carbonate solution and/or bicarbonate solution to directly obtain anionic conductive resin in which at least a part of the counterion of said quaternary onium base is CO32− and/or HCO3−, without ion exchange of the counterion to OH-type by using deleterious substance such as sodium hydroxide. The purpose is to provide a method for stably producing an ion-conductivity providing agent used for giving ion conductivity to a catalyst electrode layer of an anion-exchange membrane type fuel cell, the method being easy to operate, the ion-conductivity providing agent showing constant effect for giving ion conductivity.
摘要翻译：公开了一种阴离子交换膜式燃料电池用催化剂电极层的离子传导性提供剂的制造方法，其特征在于，包括：制造阴离子性导电性树脂，所述阴离子导电性树脂包含具有卤代离子作为其抗衡离子的季鎓碱，阴离子导电树脂与碳酸盐溶液和/或碳酸氢盐溶液接触以直接获得阴离子导电树脂，其中所述季鎓碱的至少一部分抗衡离子为CO32-和/或HCO3-，而不与OH离子交换反离子 - 通过使用有害物质如氢氧化钠。其目的是提供一种稳定地制造用于向阴离子交换膜型燃料电池的催化剂电极层提供离子传导性的离子传导性提供剂的方法，该方法易于操作，该离子导电性提供剂显示恒定的离子传导效应。

18. 发明授权

US07473666B2 Particulate porous ammoxidation catalyst 有权
标题翻译：颗粒状多孔氨氧化催化剂
公开(公告)号：US07473666B2
公开(公告)日：2009-01-06
申请号：US10541393
申请日：2004-02-27
申请人： Hiroyuki Yanagi , Hideo Midorikawa , Tutomu Ueda
发明人： Hiroyuki Yanagi , Hideo Midorikawa , Tutomu Ueda
IPC分类号： B01J21/00 , B01J23/00 , B01J23/10 , B01J23/58 , B01J23/70 , C07C253/00
CPC分类号： B01J37/0045 , B01J21/08 , B01J23/002 , B01J23/887 , B01J23/8876 , B01J35/002 , B01J35/023 , B01J35/1038 , B01J35/108 , B01J37/08 , B01J2523/00 , C07C253/26 , Y02P20/52 , B01J2523/13 , B01J2523/14 , B01J2523/22 , B01J2523/3712 , B01J2523/54 , B01J2523/68 , B01J2523/842 , B01J2523/847 , B01J2523/33 , B01J2523/67 , B01J2523/845 , B01J2523/15 , B01J2523/3718 , B01J2523/3725 , B01J2523/48 , C07C255/08
摘要： A particulate porous ammoxidation catalyst for use in producing acrylonitrile or methacrylonitrile by reacting propylene, isobutene or tert-butyl alcohol with molecular oxygen and ammonia in a fluidized-bed reactor, the catalyst comprising a metal oxide and a silica carrier having supported thereon the metal oxide, wherein the metal oxide contains at least two elements selected from the group consisting of molybdenum, bismuth, iron, vanadium, antimony, tellurium and niobium, and the catalyst having a particle diameter distribution wherein the amount of catalyst particles having a particle diameter of from 5 to 200 μm is from 90 to 100% by weight, based on the weight of the catalyst, and having a pore distribution wherein the cumulative pore volume of pores having a pore diameter of 80 Å or less is not more than 20%, based on the total pore volume of the catalyst and wherein the cumulative pore volume of pores having a pore diameter of 1,000 Å or more is not more than 20%, based on the total pore volume of the catalyst. A method for efficiently producing this catalyst.
摘要翻译：一种用于在流化床反应器中使丙烯，异丁烯或叔丁醇与分子氧和氨反应制备丙烯腈或甲基丙烯腈的颗粒状多孔氨氧化催化剂，所述催化剂包含金属氧化物和二氧化硅载体，其上载有金属氧化物其中所述金属氧化物含有选自钼，铋，铁，钒，锑，碲和铌中的至少两种元素，所述催化剂具有粒径分布，其中粒径为基于催化剂的重量，5至200重量％为90至100重量％，并且具有孔分布，其中孔径为80或更小的孔的累积孔体积不大于20％，基于对于催化剂的总孔体积，其中孔径为1000以上的孔的累积孔体积不大于20％，基于t 它是催化剂的总孔体积。一种有效生产该催化剂的方法。

19. 发明授权

US06772412B2 Data processing device equipped with a thread switching circuit 失效
标题翻译：数据处理装置配有线程切换电路
公开(公告)号：US06772412B2
公开(公告)日：2004-08-03
申请号：US09809080
申请日：2001-03-16
申请人： Yosuke Baba , Motoyuki Kato , Yasuhiro Nishimura , Hiroyuki Yanagi , Shiji Nakagawa
发明人： Yosuke Baba , Motoyuki Kato , Yasuhiro Nishimura , Hiroyuki Yanagi , Shiji Nakagawa
IPC分类号： G06F944
CPC分类号： G06F9/3851 , G06F9/30101 , G06F9/462
摘要： A device is provided with a control device that activates a stack machine and that also controls thread switching. This will reduce both the hardware requirements and the number of development processes needed to produce a switching control mechanism. It will also allow the threads to be switched very rapidly. The circuit to control thread switching: 1) discriminates a next thread to be switched to; 2) sidetracks the register data indicating the current state of execution of the program stored in the control register group in the stack machine in response to the request to switch threads and stores them in a sidetracking area set up for the current thread; and 3) reads the register data out of the sidetracking area for the thread that is switched to, which has been recognized by the discrimination unit, after the current data have been sidetracked by the sidetracking processor.
摘要翻译：设备具有控制装置，其激活堆栈机器并且还控制线程切换。这将减少硬件要求和生产开关控制机制所需的开发过程数量。它也将允许线程切换非常快。控制线程切换的电路：1）识别要切换的下一个线程; 2）响应于切换线程的请求，将指示存储在堆栈机器中的控制寄存器组中的程序的当前执行状态旁路的寄存器数据存储在当前线程设置的侧线区域中; 以及3）在当前数据被侧钻处理器侧面夹入之后，从被识别单元识别的被切换线程的侧线区域中读出寄存器数据。

20. 发明授权

US06725345B2 Object-oriented program with a memory accessing function 失效
标题翻译：具有内存访问功能的面向对象程序
公开(公告)号：US06725345B2
公开(公告)日：2004-04-20
申请号：US09796553
申请日：2001-03-02
申请人： Yosuke Baba , Motoyuki Kato , Shinji Nakagawa , Hiroyuki Yanagi
发明人： Yosuke Baba , Motoyuki Kato , Shinji Nakagawa , Hiroyuki Yanagi
IPC分类号： G06F1200
CPC分类号： G06F12/1491 , G06F9/468 , G06F12/1483 , G06F21/6281
摘要： An information processing system is provided that is capable of memory access suitable in any programming environment and which increases reliability by varying or restricting program access to memory areas. A number of data storage areas are established in memory that are equal to a number of declared object oriented array elements. Thereafter, memory is addressed using an index value of the indicated array element in the area where the data is stored. If, for example, an array object of a size corresponding to the total size of addresses in the memory is declared, the entire memory will be considered to be the data storage area. A program can then access a memory address by looking up a desired element.
摘要翻译：提供一种信息处理系统，其能够在任何编程环境中适合存储器访问，并且通过改变或限制对存储器区域的程序访问来增加可靠性。在存储器中建立多个数量存储区域，其数量等于多个已声明的面向对象的数组元素。此后，使用存储数据的区域中指示的数组元素的索引值来寻址存储器。例如，如果声明与存储器中的地址的总大小相对应的数组对象，则整个存储器将被认为是数据存储区域。然后，程序可以通过查找所需的元素来访问存储器地址。

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