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11. 发明申请

US20140175459A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：硅碳化硅半导体器件及其制造方法
公开(公告)号：US20140175459A1
公开(公告)日：2014-06-26
申请号：US13994855
申请日：2012-02-06
申请人： Kensaku Yamamoto , Masato Noborio , Hideo Matsuki , Hidefumi Takaya , Masahiro Sugimoto , Narumasa Soejima , Tsuyoshi Ishikawa , Yukihiko Watanabe
发明人： Kensaku Yamamoto , Masato Noborio , Hideo Matsuki , Hidefumi Takaya , Masahiro Sugimoto , Narumasa Soejima , Tsuyoshi Ishikawa , Yukihiko Watanabe
IPC分类号： H01L29/78 , H01L29/16 , H01L29/66
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/66068 , H01L29/66348 , H01L29/7397
摘要： A SiC semiconductor device includes: a semiconductor switching element having: a substrate, a drift layer and a base region stacked in this order; a source region and a contact region in the base region; a trench extending from a surface of the source region to penetrate the base region; a gate electrode on a gate insulating film in the trench; a source electrode electrically coupled with the source region and the base region; a drain electrode on a back side of the substrate; and multiple deep layers in an upper portion of the drift layer deeper than the trench. Each deep layer has upper and lower portions. A width of the upper portion is smaller than the lower portion.
摘要翻译： SiC半导体器件包括：半导体开关元件，其具有：依次层叠的基板，漂移层和基极区域; 源极区域和基极区域中的接触区域; 从源极区域的表面延伸以穿透基部区域的沟槽; 沟槽中的栅极绝缘膜上的栅电极; 源极，与源极区域和基极区域电耦合; 位于所述基板的背面的漏电极; 以及在漂移层的上部比沟槽更深的多个深层。每个深层具有上部和下部。上部的宽度小于下部。

12. 发明申请

US20130075760A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20130075760A1
公开(公告)日：2013-03-28
申请号：US13703284
申请日：2011-06-02
申请人： Hidefumi Takaya , Hideo Matsuki , Naohiro Suzuki , Tsuyoshi Ishikawa
发明人： Hidefumi Takaya , Hideo Matsuki , Naohiro Suzuki , Tsuyoshi Ishikawa
IPC分类号： H01L29/16 , H01L29/49
CPC分类号： H01L29/1608 , H01L21/046 , H01L29/0619 , H01L29/0623 , H01L29/0653 , H01L29/0661 , H01L29/0696 , H01L29/407 , H01L29/41741 , H01L29/4236 , H01L29/42368 , H01L29/49 , H01L29/66068 , H01L29/7397 , H01L29/7811 , H01L29/7813
摘要： The present application relates to technology for improving a withstand voltage of a semiconductor device. The semiconductor device includes a termination area that surrounds a cell area. The cell area is provided with a plurality of main trenches. The termination area is provided with one or more termination trenches surrounding the cell area. A termination trench is disposed at an innermost circumference of one or more termination trenches. A body region is disposed on a surface of a drift region. Each main trench reaches the drift region. A gate electrode is provided within each main trench. The termination trench reaches the drift region. Sidewalls and a bottom surface of the termination trench are covered with a insulating layer. A surface of the insulating layer covering the bottom surface of the termination trench is covered with a buried electrode. A gate potential is applied to the buried electrode.
摘要翻译：本申请涉及用于提高半导体器件耐受电压的技术。半导体器件包括围绕单元区域的终止区域。单元区域设置有多个主沟槽。终端区域设置有围绕单元区域的一个或多个终止沟槽。终端沟槽设置在一个或多个端接沟槽的最内圆周处。体区域设置在漂移区域的表面上。每个主沟槽到达漂移区域。在每个主沟槽内设置栅电极。端接沟槽到达漂移区域。侧壁和终端沟槽的底表面被绝缘层覆盖。覆盖终端沟槽的底面的绝缘层的表面被掩埋电极覆盖。将栅极电位施加到掩埋电极。

13. 发明授权

US08193564B2 Silicon carbide semiconductor device including deep layer 有权
标题翻译：碳化硅半导体器件包括深层
公开(公告)号：US08193564B2
公开(公告)日：2012-06-05
申请号：US12379076
申请日：2009-02-12
申请人： Naohiro Suzuki , Eiichi Okuno , Hideo Matsuki
发明人： Naohiro Suzuki , Eiichi Okuno , Hideo Matsuki
IPC分类号： H01L29/71
CPC分类号： H01L29/7813 , H01L29/0615 , H01L29/0619 , H01L29/0623 , H01L29/0634 , H01L29/0638 , H01L29/0661 , H01L29/0847 , H01L29/086 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/66068 , H01L29/7811 , H01L29/7828
摘要： A silicon carbide semiconductor device includes a substrate, a drift layer located on a first surface of the substrate, a base region located on the drift layer, a source region located on the base region, a trench penetrating the source region and the base region to the drift layer, a channel layer located in the trench, a gate insulating layer located on the channel layer, a gate electrode located on the gate insulating layer, a source electrode electrically coupled with the source region and the base region, a drain electrode located on a second surface of the substrate, and a deep layer. The deep layer is located under the base region, extends to a depth deeper than the trench and is formed along an approximately normal direction to a sidewall of the trench.
摘要翻译：碳化硅半导体器件包括衬底，位于衬底的第一表面上的漂移层，位于漂移层上的基极区域，位于基极区域上的源极区域，穿透源极区域和基极区域的沟槽漂移层，位于沟槽中的沟道层，位于沟道层上的栅极绝缘层，位于栅极绝缘层上的栅电极，与源区和基极区电耦合的源电极，位于在衬底的第二表面上和深层。深层位于基底区域下方，延伸到比沟槽更深的深度，并且沿着大致正常的方向形成在沟槽的侧壁上。

14. 发明申请

US20090200559A1 Silicon carbide semiconductor device including deep layer 有权
标题翻译：碳化硅半导体器件包括深层
公开(公告)号：US20090200559A1
公开(公告)日：2009-08-13
申请号：US12379076
申请日：2009-02-12
申请人： Naohiro Suzuki , Eiichi Okuno , Hideo Matsuki
发明人： Naohiro Suzuki , Eiichi Okuno , Hideo Matsuki
IPC分类号： H01L29/15
CPC分类号： H01L29/7813 , H01L29/0615 , H01L29/0619 , H01L29/0623 , H01L29/0634 , H01L29/0638 , H01L29/0661 , H01L29/0847 , H01L29/086 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/66068 , H01L29/7811 , H01L29/7828
摘要： A silicon carbide semiconductor device includes a substrate, a drift layer located on a first surface of the substrate, a base region located on the drift layer, a source region located on the base region, a trench penetrating the source region and the base region to the drift layer, a channel layer located in the trench, a gate insulating layer located on the channel layer, a gate electrode located on the gate insulating layer, a source electrode electrically coupled with the source region and the base region, a drain electrode located on a second surface of the substrate, and a deep layer. The deep layer is located under the base region, extends to a depth deeper than the trench and is formed along an approximately normal direction to a sidewall of the trench.
摘要翻译：碳化硅半导体器件包括衬底，位于衬底的第一表面上的漂移层，位于漂移层上的基极区域，位于基极区域上的源极区域，穿透源极区域和基极区域的沟槽漂移层，位于沟槽中的沟道层，位于沟道层上的栅极绝缘层，位于栅极绝缘层上的栅电极，与源区和基极区电耦合的源电极，位于在衬底的第二表面上和深层。深层位于基底区域下方，延伸到比沟槽更深的深度，并且沿着大致正常的方向形成在沟槽的侧壁上。

15. 发明申请

US20060145322A1 Circuit device and portable device 失效
标题翻译：电路设备和便携式设备
公开(公告)号：US20060145322A1
公开(公告)日：2006-07-06
申请号：US11320248
申请日：2005-12-27
申请人： Kouji Takahashi , Hideo Matsuki , Masami Ito , Naoyuki Aoki
发明人： Kouji Takahashi , Hideo Matsuki , Masami Ito , Naoyuki Aoki
IPC分类号： H01L23/02
CPC分类号： H01L21/4832 , H01L21/561 , H01L23/3107 , H01L23/49575 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L2221/68377 , H01L2224/32225 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/49171 , H01L2224/73265 , H01L2224/83805 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01059 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/3025 , H01L2224/85 , H01L2924/00 , H01L2924/01026 , H01L2924/00012 , H01L2224/05599
摘要： To provide a circuit device freed from constrains of a mounting direction. The circuit device according to the present invention includes: a conductive pattern for forming a die pad, a first bonding pad, and a second bonding pad; and a semiconductor element (TR) attached to the conductive pattern. The circuit device further includes: a sealing resin for covering the semiconductor element (TR) and the conductive pattern with a rear surface of the conductive pattern being exposed; and a coating resin for covering the rear surface of the conductive pattern exposed from the sealing resin. The rear surface of the conductive pattern is exposed from openings of the coating resin, and the openings are arranged with rotational symmetry about a central point of the circuit device.
摘要翻译：为了提供一个电路装置，不受安装方向的约束。根据本发明的电路装置包括：用于形成管芯焊盘的导电图案，第一焊盘和第二焊盘; 以及附接到导电图案的半导体元件（TR）。电路装置还包括：用于覆盖半导体元件（TR）的密封树脂和导电图案的背面露出的导电图案; 以及用于覆盖从密封树脂露出的导电图案的后表面的涂覆树脂。导电图案的后表面从涂覆树脂的开口露出，并且开口围绕电路装置的中心点以旋转对称的方式布置。

16. 发明授权

US06998817B2 Charge control circuit and method of adjusting voltage for detecting full charge of secondary battery in same 有权
标题翻译：充电控制电路和调节电压的方法，用于检测二次电池的充满电
公开(公告)号：US06998817B2
公开(公告)日：2006-02-14
申请号：US10680978
申请日：2003-10-07
申请人： Mitsuru Ooyagi , Hideo Matsuki
发明人： Mitsuru Ooyagi , Hideo Matsuki
IPC分类号： H01M10/44 , H01M10/46
CPC分类号： G01R19/16542 , H02J7/0086
摘要： In a charge control circuit comprising a full charge detection voltage supply device supplying a predetermined full charge detection voltage for detecting a full charge status; and a comparator including a charge status voltage input unit to which is inputted a charge status voltage indicative of the charge status of a secondary battery and a full charge detection voltage input unit to which the full charge detection voltage is inputted, the comparator outputting a result of a comparison between the charge status voltage and the full charge detection voltage, the charge control circuit further comprises an external terminal connected to the full charge detection voltage input unit of the comparator and for adjusting the full charge detection voltage, with an electronic component for adjusting the full charge detection voltage being connectable to the external terminal.
摘要翻译：一种充电控制电路，包括提供预定的全电荷检测电压以检测完全充电状态的完全充电检测电压供给装置; 以及比较器，其包括充电状态电压输入单元，在该充电状态电压输入单元中输入表示二次电池的充电状态的充电状态电压和输入完全充电检测电压的完全充电检测电压输入单元，比较器输出结果在充电状态电压和满充电检测电压之间进行比较，充电控制电路还包括连接到比较器的全电荷检测电压输入单元的外部端子，并用于调整全电荷检测电压，电子部件用于调整可连接到外部端子的完全充电检测电压。

17. 发明申请

US20050037798A1 Mobile station, mobile communication system, and cell selection method 有权
标题翻译：移动台，移动通信系统和小区选择方法
公开(公告)号：US20050037798A1
公开(公告)日：2005-02-17
申请号：US10686609
申请日：2003-10-17
申请人： Takeshi Yamashita , Hideo Matsuki , Jyunichirou Hagiwara , Hidetoshi Kayama , Narumi Umeda
发明人： Takeshi Yamashita , Hideo Matsuki , Jyunichirou Hagiwara , Hidetoshi Kayama , Narumi Umeda
IPC分类号： H04W36/04 , H04W36/30 , H04Q7/20
CPC分类号： H04W36/04 , H04W36/30
摘要： In mobile communication system 100 according to the present invention, mobile station 1 is camped on cell C10 established by base station B10. In the cell C10, there exist indoor cells C11-C13 and outdoor cells C21, C22 as neighboring cells. Mobile station 1 measures received levels of cells C10-C13, C21, C22 and determines cell types of the respective cells, i.e., whether each cell is an indoor cell or not, based on broadcast information M1. Mobile station 1 selects a cell as a reselection target on the basis of the received levels and cell types.
摘要翻译：在根据本发明的移动通信系统100中，移动台1驻留在由基站B10建立的小区C10上。在单元格C10中，存在室内单元C11-C13和室外单元C21，C22作为相邻单元。移动站1基于广播信息M1来测量小区C10-C13，C21，C22的接收电平，并且确定各个小区的小区类型，即每个小区是否是室内小区。移动站1基于所接收的等级和小区类型来选择小区作为重选目标。

18. 发明授权

US4885944A Torque sensor 失效
标题翻译：扭矩传感器
公开(公告)号：US4885944A
公开(公告)日：1989-12-12
申请号：US160869
申请日：1988-02-26
申请人： Toru Yagi , Hideo Matsuki
发明人： Toru Yagi , Hideo Matsuki
IPC分类号： G01L3/10 , G01L5/22
CPC分类号： G01L5/221 , G01L3/102 , G01L3/105
摘要： A torque sensor comprising a magnetic amorphous film whose magnetostrictive characteristics vary with the amount of torque applied thereto and coils for detecting magnetostrictive variation disposed opposite the magnetic film and is detachably coupled with a shaft whose torque is to be measured. The shaft is cut into two halves and the unit has flange couplings connected to the one half of the shaft while receiving the other shaft half at its boss. The boss is elongated to form a tubular portion on which said magnetic film is affixed and an enclosure member houses the tubular portion. The coils are attached on the inner wall of the enclosure member to keep a distance from the film affixed on the tubular portion.

19. 发明授权

US09276075B2 Semiconductor device having vertical MOSFET structure that utilizes a trench-type gate electrode and method of producing the same 有权
标题翻译：具有利用沟槽型栅电极的垂直MOSFET结构的半导体器件及其制造方法
公开(公告)号：US09276075B2
公开(公告)日：2016-03-01
申请号：US14352142
申请日：2012-10-17
申请人： Hidefumi Takaya , Hideo Matsuki , Naohiro Suzuki , Tsuyoshi Ishikawa , Narumasa Soejima , Yukihiko Watanabe
发明人： Hidefumi Takaya , Hideo Matsuki , Naohiro Suzuki , Tsuyoshi Ishikawa , Narumasa Soejima , Yukihiko Watanabe
IPC分类号： H01L29/78 , H01L21/8234 , H01L29/423 , H01L29/417 , H01L29/66 , H01L29/06 , H01L21/28 , H01L21/04 , H01L29/16
CPC分类号： H01L29/4236 , H01L21/047 , H01L21/28008 , H01L21/823487 , H01L29/0619 , H01L29/0623 , H01L29/1608 , H01L29/41741 , H01L29/42368 , H01L29/66068 , H01L29/66666 , H01L29/7806 , H01L29/7813 , H01L29/7827
摘要： A semiconductor device has a semiconductor substrate including a body region, a drift region, a trench that extends from a surface of the semiconductor substrate into the drift region through the body region, and a source region located adjacent to the trench in a range exposed to the surface of the semiconductor substrate, the source region being isolated from the drift region by the body region. A specific layer is disposed on a bottom of the trench, and it has a characteristic of forming a depletion layer at a junction between the specific layer and the drift region. An insulating layer covers an upper surface of the specific layer and a sidewall of the trench. A conductive portion is formed on a part of the side wall of the trench. The conductive portion is joined to the specific layer, and reaches the surface of the semiconductor substrate.
摘要翻译：半导体器件具有半导体衬底，其包括体区，漂移区，从半导体衬底的表面延伸通过体区的漂移区的沟槽，以及与暴露于半导体衬底的表面，源区域通过身体区域与漂移区隔离。特定层设置在沟槽的底部，并且具有在特定层和漂移区之间的结处形成耗尽层的特征。绝缘层覆盖特定层的上表面和沟槽的侧壁。导电部分形成在沟槽的侧壁的一部分上。导电部分连接到特定层，并到达半导体衬底的表面。

20. 发明授权

US08618555B2 Silicon carbide semiconductor device and method of manufacturing the same 有权
标题翻译：碳化硅半导体器件及其制造方法
公开(公告)号：US08618555B2
公开(公告)日：2013-12-31
申请号：US13117575
申请日：2011-05-27
申请人： Naohiro Suzuki , Hideo Matsuki , Masahiro Sugimoto , Hidefumi Takaya , Jun Morimoto , Tsuyoshi Ishikawa , Narumasa Soejima , Yukihiko Watanabe
发明人： Naohiro Suzuki , Hideo Matsuki , Masahiro Sugimoto , Hidefumi Takaya , Jun Morimoto , Tsuyoshi Ishikawa , Narumasa Soejima , Yukihiko Watanabe
IPC分类号： H01L29/66
CPC分类号： H01L29/7813 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/66068
摘要： The silicon carbide semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate insulating layer, a gate electrode, a source electrode, a drain electrode, and a deep layer. The deep layer is disposed under the base region and is located to a depth deeper than the trench. The deep layer is divided into a plurality of portions in a direction that crosses a longitudinal direction of the trench. The portions include a group of portions disposed at positions corresponding to the trench and arranged at equal intervals in the longitudinal direction of the trench. The group of portions surrounds corners of a bottom of the trench.
摘要翻译：碳化硅半导体器件包括衬底，漂移层，基极区域，源极区域，沟槽，栅极绝缘层，栅极电极，源极电极，漏极电极和深层。深层设置在基底区域下方并且位于比沟槽更深的深度。深层在与沟槽的纵向方向交叉的方向上分成多个部分。这些部分包括设置在与沟槽相对应的位置处的一组部分，其在沟槽的纵向方向上以相等的间隔布置。该组部分围绕沟槽的底部的角落。

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