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11. 发明授权

US08591753B2 Laser processing method 有权
标题翻译：激光加工方法
公开(公告)号：US08591753B2
公开(公告)日：2013-11-26
申请号：US13388739
申请日：2011-07-19
申请人： Hideki Shimoi , Keisuke Araki
发明人： Hideki Shimoi , Keisuke Araki
IPC分类号： C03C15/00
CPC分类号： C03C15/00 , B23K26/382 , B23K26/384 , B23K26/40 , B23K26/55 , B23K26/60 , B23K2103/50 , C03C23/0025 , C03C23/003 , H01L21/486 , H01L21/76898 , H01L23/147 , H01L23/15 , H01L23/49827
摘要： A laser processing method of converging a laser light into an object to be processed made of glass so as to form a modified region and etching the object along the modified region so as to form a through hole in the object comprises a browning step of discoloring at least a part of the object by browning; a laser light converging step of forming the modified region in the discolored part of the object by converging the laser light into the object after the browning step; and an etching step of etching the object after the laser light converging step so as to advance the etching selectively along the modified region and form the through hole.
摘要翻译：一种激光加工方法，其将激光会聚到由玻璃制成的待加工对象物中，以形成改质区域，并沿着改质区域蚀刻物体，以便在物体中形成通孔，该方法包括：至少部分对象通过褐变; 激光聚光步骤，通过在所述褐变步骤后将所述激光会聚到所述物体中，在所述物体的变色部分中形成所述改质区域; 以及在激光聚光步骤之后蚀刻所述物体以便沿着所述改质区域选择性地进行蚀刻并形成所述通孔的蚀刻步骤。

12. 发明申请

US20120135607A1 SUBSTRATE PROCESSING METHOD 有权
标题翻译：基板处理方法
公开(公告)号：US20120135607A1
公开(公告)日：2012-05-31
申请号：US13389287
申请日：2011-07-19
申请人： Hideki Shimoi , Keisuke Araki
发明人： Hideki Shimoi , Keisuke Araki
IPC分类号： H01L21/306
CPC分类号： B23K26/40 , B23K26/0006 , B23K26/064 , B23K26/0736 , B23K26/382 , B23K26/384 , B23K26/53 , B23K26/55 , B23K2103/50 , B23K2103/56 , H01L21/30608 , H01L21/76898
摘要： A substrate processing method for forming a space extending along a predetermined line in a silicon substrate includes a first step of converging a laser light which is an elliptically-polarized light having an ellipticity other than 1 at the substrate so as to form a plurality of modified spots within the substrate along the line and produce a modified region including the modified spots, and a second step of anisotropically etching the substrate so as to advance an etching selectively along the modified region and form the space in the substrate. In the first step, the light is converged at the substrate such that a moving direction of the light with respect to the substrate and a direction of polarization of the light form an angle of 45° or greater therebetween, and the modified spots are made align in one row along the line.
摘要翻译：在硅衬底中形成沿着预定线延伸的空间的衬底处理方法包括：在衬底处会聚具有除了1以外的椭圆率的椭圆偏振光的激光的第一步骤，以形成多个经修改的沿着该线的衬底内的斑点，并产生包括改性斑点的改性区域;以及第二步骤，各向异性蚀刻衬底，以沿着改质区域选择性地进行刻蚀，并形成衬底中的空间。在第一步骤中，光在基板处会聚，使得光相对于基板的移动方向和光的偏振方向在其间形成45°或更大的角度，并且将修改的光点对准沿着一行。

13. 发明申请

US20120135602A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120135602A1
公开(公告)日：2012-05-31
申请号：US13388626
申请日：2011-07-19
申请人： Hideki Shimoi , Keisuke Araki
发明人： Hideki Shimoi , Keisuke Araki
IPC分类号： H01L21/302
CPC分类号： B23K26/55 , B23K26/0006 , B23K26/0622 , B23K26/0853 , B23K2101/40 , B23K2103/56 , H01L23/473 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device having a cooling mechanism comprises a modified region forming step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a modified region within the object along a line to form a modified region, an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the first modified region and form a flow path for circulating a coolant as a cooling mechanism within the object, and a functional device forming step of forming a functional device on one main face side of the object.
摘要翻译：一种制造具有冷却机构的半导体器件的方法包括：将由激光制成的待加工的片状物体的激光聚光的改质区域形成工序，以在该物体内沿着线形成修饰区域，形成修改区域，在改质区域形成工序后各向异性蚀刻物体的蚀刻步骤，以沿着第一改质区域选择性地进行蚀刻，并形成用于使作为冷却机构的冷却剂循环在物体内的流路，以及功能元件在物体的一个主面侧形成功能元件的形成工序。

14. 发明申请

US20120129359A1 LASER PROCESSING METHOD 有权
标题翻译：激光加工方法
公开(公告)号：US20120129359A1
公开(公告)日：2012-05-24
申请号：US13388716
申请日：2011-07-19
申请人： Hideki Shimoi , Keisuke Araki
发明人： Hideki Shimoi , Keisuke Araki
IPC分类号： H01L21/268
CPC分类号： H01L21/30608 , B23K26/0006 , B23K26/382 , B23K26/384 , B23K26/40 , B23K26/53 , B23K26/55 , B23K2103/50 , B23K2103/56 , H01L21/486 , H01L23/49827
摘要： A laser processing method comprises a laser light converging step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a modified region within the object, and an etching step of anisotropically etching the object so as to thin the object to a target thickness and advancing the etching selectively along the modified region so as to form the object with a through hole tilted with respect to a thickness direction of the object after the laser light converging step, wherein the laser light converging step forms a first modified region as the modified region in a part corresponding to the through hole in the object and a second modified region as the modified region extending parallel to the thickness direction and joining with the first modified region in a part to be removed upon thinning by the anisotropic etching in the object, and wherein the etching step advances the etching selectively along the second modified region and then along the first modified region while thinning the object and completes forming the through hole when the object is at the target thickness.
摘要翻译：一种激光加工方法，其特征在于，包括：激光收敛步骤，使激光在由硅制成的待加工的片状物体上会聚，以在物体内形成改质区域;以及蚀刻工序，对所述物体进行各向异性蚀刻，将物体变薄到目标厚度，并且沿着改质区域选择性地推进蚀刻，以便在激光聚光步骤之后形成具有相对于物体的厚度方向倾斜的通孔的物体，其中激光聚光步骤形成作为与物体中的通孔对应的部分中的改质区域的第一改质区域和作为改变区域的第二改质区域，其平行于厚度方向延伸，并且在变薄的部分中与第一改质区域连接，该物体中的各向异性蚀刻，并且其中蚀刻步骤沿着第二改质区选择性地前进蚀刻，然后沿着该fi 第一修改区域，同时使物体变薄，并在物体处于目标厚度时完成形成通孔。

15. 发明授权

US09108269B2 Method for manufacturing light-absorbing substrate and method for manufacturing mold for making same 有权
标题翻译：光吸收基板的制造方法及其制造方法
公开(公告)号：US09108269B2
公开(公告)日：2015-08-18
申请号：US13388595
申请日：2011-07-19
申请人： Hideki Shimoi , Keisuke Araki
发明人： Hideki Shimoi , Keisuke Araki
IPC分类号： B44C1/22 , B23K26/00 , B23K26/36 , H01L31/0236
CPC分类号： B23K26/355 , B23K26/361 , H01L31/02363 , Y02E10/50
摘要： A method for manufacturing a light-absorbing substrate having a surface with depressions and projections comprises a first step of irradiating a substrate with a laser light so as to form a plurality of modified regions arranged two-dimensionally along a surface of the substrate within the substrate and cause at least one of each modified region and a fracture generated from the modified region to reach the surface of the substrate and a second step of etching the surface of the substrate after the first step so as to form depressions and projections on the surface of the substrate.
摘要翻译：一种具有凹凸表面的光吸收基板的制造方法，其特征在于，包括：第一工序，用激光照射基板，形成沿着基板的基板表面二维配置的多个改质区域并且使得每个改性区域中的至少一个和从所述改性区域产生的断裂到达所述基板的表面;以及第二步骤，在所述第一步骤之后蚀刻所述基板的表面，以在所述第一步骤的表面上形成凹陷和突起底物。

16. 发明授权

US08961806B2 Laser processing method 有权
标题翻译：激光加工方法
公开(公告)号：US08961806B2
公开(公告)日：2015-02-24
申请号：US13388597
申请日：2011-07-19
申请人： Hideki Shimoi , Hiroyuki Kyushima , Keisuke Araki
发明人： Hideki Shimoi , Hiroyuki Kyushima , Keisuke Araki
IPC分类号： B44C1/22 , H01L21/306 , B23K26/00 , B23K26/06 , B23K26/08
CPC分类号： H01L23/147 , B23K26/0006 , B23K26/0622 , B23K26/0853 , B23K26/53 , B23K2101/40 , B23K2103/56 , H01L21/30608 , H01L21/486 , H01L21/76898 , H01L23/49827
摘要： In a method comprising a modified region forming step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a plurality of modified spots within the object along a modified region forming line tilted in a first lateral direction with respect to a thickness direction of the object and the plurality of modified spots construct a modified region, and an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the modified region and form the object with a space extending obliquely with respect to the thickness direction, the modified region forming step forms the plurality of modified spots such that the modified spots adjacent to each other at least partly overlap each other when seen in the first lateral direction.
摘要翻译：在包括修改区域形成步骤的方法中，所述修改区域形成步骤将激光会聚在由硅制成的待加工的片状物体上，以沿着沿第一横向方向倾斜的改质区域形成线在物体内形成多个改质点相对于物体的厚度方向，并且所述多个改质点构成改质区域，以及在所述改质区域形成工序之后对所述物体进行各向异性蚀刻的蚀刻工序，以沿着所述改质区域选择性地进行蚀刻，并形成所述物体具有相对于厚度方向倾斜延伸的空间，所述改质区域形成步骤形成所述多个改质点，使得当在所述第一横向方向上观察时，彼此相邻的所述改性斑点彼此至少部分重叠。

17. 发明授权

US08841213B2 Method for manufacturing interposer 有权
标题翻译：内插制造方法
公开(公告)号：US08841213B2
公开(公告)日：2014-09-23
申请号：US13389050
申请日：2011-07-19
申请人： Hideki Shimoi , Keisuke Araki
发明人： Hideki Shimoi , Keisuke Araki
IPC分类号： H01L21/768
CPC分类号： B23K26/0853 , B23K26/0006 , B23K26/0622 , B23K26/53 , B23K26/55 , B23K2101/40 , B23K2103/56 , H01L21/30608 , H01L21/486 , H01L23/49827 , H01L2924/0002 , H05K3/002 , H05K2203/107 , H01L2924/00
摘要： A method for manufacturing an interposer equipped with a plurality of through-hole electrodes comprises a laser light converging step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a modified region in the object; an etching step of anisotropically etching the object after the laser light converging step so as to advance etching selectively along the modified region and form a plurality of through holes in the object, each through hole being tilted with respect to a thickness direction of the object and having a rectangular cross section; an insulating film forming step of forming an insulating film on an inner wall of each through hole after the etching step; and a through-hole electrode forming step of inserting a conductor into the through holes so as to form the through-hole electrodes after the insulating film forming step; wherein the plurality of through holes are arranged such that the through holes aligning in the tilted direction are staggered in a direction perpendicular to the tilted direction as seen from a main face of the object.
摘要翻译：一种配备有多个通孔电极的插入件的制造方法，其特征在于，包括激光收敛步骤，将激光会聚在由硅制成的被处理片状物体上，以在物体中形成改质区域; 在激光聚光步骤之后对物体进行各向异性蚀刻的蚀刻步骤，以沿着改质区域选择性地进行蚀刻，并在物体中形成多个通孔，每个通孔相对于物体的厚度方向倾斜，具有矩形截面; 绝缘膜形成步骤，在蚀刻步骤之后在每个通孔的内壁上形成绝缘膜; 以及通孔电极形成步骤，在绝缘膜形成步骤之后，将导体插入通孔中以形成通孔电极; 其中所述多个通孔被布置成使得沿着所述倾斜方向对齐的所述通孔在从所述物体的主面看时与所述倾斜方向垂直的方向交错。

18. 发明申请

US20120131958A1 LASER PROCESSING METHOD 有权
标题翻译：激光加工方法
公开(公告)号：US20120131958A1
公开(公告)日：2012-05-31
申请号：US13388739
申请日：2011-07-19
申请人： Hideki Shimoi , Keisuke Araki
发明人： Hideki Shimoi , Keisuke Araki
IPC分类号： C03C15/00
CPC分类号： C03C15/00 , B23K26/382 , B23K26/384 , B23K26/40 , B23K26/55 , B23K26/60 , B23K2103/50 , C03C23/0025 , C03C23/003 , H01L21/486 , H01L21/76898 , H01L23/147 , H01L23/15 , H01L23/49827
摘要： A laser processing method of converging a laser light into an object to be processed made of glass so as to form a modified region and etching the object along the modified region so as to form a through hole in the object comprises a browning step of discoloring at least a part of the object by browning; a laser light converging step of forming the modified region in the discolored part of the object by converging the laser light into the object after the browning step; and an etching step of etching the object after the laser light converging step so as to advance the etching selectively along the modified region and form the through hole.
摘要翻译：一种激光加工方法，其将激光会聚到由玻璃制成的待加工对象物中，以形成改质区域，并沿着改质区域蚀刻物体，以便在物体中形成通孔，该方法包括：至少部分对象通过褐变; 激光聚光步骤，通过在所述褐变步骤之后将所述激光会聚到所述物体中，在所述物体的变色部分中形成所述改质区域; 以及在激光聚光步骤之后蚀刻所述物体以便沿着所述改质区域选择性地进行蚀刻并形成所述通孔的蚀刻步骤。

19. 发明申请

US20120129348A1 LASER PROCESSING METHOD 有权
标题翻译：激光加工方法
公开(公告)号：US20120129348A1
公开(公告)日：2012-05-24
申请号：US13388717
申请日：2011-07-19
申请人： Hideki Shimoi , Keisuke Araki
发明人： Hideki Shimoi , Keisuke Araki
IPC分类号： H01L21/308 , H01L21/31
CPC分类号： H01L21/30608 , B23K26/382 , B23K26/384 , B23K26/40 , B23K26/55 , B23K2101/35 , B23K2103/50 , H01L21/30604 , H01L21/486
摘要： A laser processing method of converging laser light into an object to be processed made of silicon so as to form a modified region and etching the object along the modified region so as to form the object with a through hole comprises a laser light converging step of converging the laser light at the object so as to form the modified region along a part corresponding to the through hole in the object; an etch resist film producing step of producing an etch resist film resistant to etching on an outer surface of the object after the laser light converging step; and an etching step of etching the object so as to advance the etching selectively along the modified region and form the through hole after the etch resist film producing step; while the laser light converging step exposes the modified region to the outer surface of the object.
摘要翻译：一种激光加工方法，其将激光会聚到由硅制成的被处理物体中以形成改质区域，并沿着改质区域蚀刻物体以形成具有通孔的物体，其包括：会聚的激光聚光步骤激光在物体上沿着与物体中的通孔对应的部分形成改质区域; 蚀刻抗蚀剂膜制造步骤，在激光聚光步骤之后产生耐蚀刻物体的外表面上的蚀刻抗蚀剂膜; 以及蚀刻步骤，蚀刻所述物体，以便沿着所述改质区域选择性地推进所述蚀刻，并且在所述抗蚀剂膜制造步骤之后形成所述通孔; 而激光聚光步骤将修饰区域暴露于物体的外表面。

20. 发明授权

US08802544B2 Method for manufacturing chip including a functional device formed on a substrate 有权
标题翻译：一种制造芯片的方法，其包括形成在基板上的功能元件
公开(公告)号：US08802544B2
公开(公告)日：2014-08-12
申请号：US13389053
申请日：2011-07-19
申请人： Hideki Shimoi , Keisuke Araki
发明人： Hideki Shimoi , Keisuke Araki
IPC分类号： H01L21/78
CPC分类号： H01L21/78 , H01L21/7806
摘要： A method for manufacturing a chip constituted by a functional device formed on a substrate comprises a functional device forming step of forming the functional device on one main face of a sheet-like object to be processed made of silicon; a first modified region forming step of converging a laser light at the object so as to form a first modified region along the one main face of the object at a predetermined depth corresponding to the thickness of the substrate from the one main face; a second modified region forming step of converging the laser light at the object so as to form a second modified region extending such as to correspond to a side edge of the substrate as seen from the one main face on the one main face side in the object such that the second modified region joins with the first modified region along the thickness direction of the object; and an etching step of selectively advancing etching along the first and second modified regions after the first and second modified region forming steps so as to cut out a part of the object and form the substrate.
摘要翻译：由形成在基板上的功能元件构成的芯片的制造方法包括功能元件形成步骤，在由硅制成的被加工片状物体的一个主面上形成功能元件; 第一改质区域形成步骤，使激光在物体处会聚，以便沿着与该基板的厚度对应的预定深度从该主面形成沿物体的一个主面的第一改质区域; 第二改质区域形成步骤，将激光会聚在物体上，以形成第二改质区域，该第二改质区域从物体的一个主面侧的一个主面看，对应于基板的侧缘延伸使得所述第二改质区域沿着所述物体的厚度方向与所述第一改质区域连接; 以及蚀刻步骤，在第一和第二改质区域形成步骤之后沿着第一和第二改质区选择性地进行蚀刻，以便切割出物体的一部分并形成衬底。

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