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    • 12. 发明授权
    • Magnetic sensor and manufacturing method therefor
    • 磁传感器及其制造方法
    • US07362548B2
    • 2008-04-22
    • US11497378
    • 2006-08-02
    • Hideki SatoKokichi AisoYukio Wakui
    • Hideki SatoKokichi AisoYukio Wakui
    • G11B5/127
    • G01R33/093B82Y25/00B82Y40/00G01R33/0005G01R33/09H01F10/3268H01F10/3295H01F41/304Y10T29/49034Y10T29/49043Y10T29/49044Y10T29/49052Y10T29/49067
    • A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the permanent magnet films are paired and connected to both ends of the magnetoresistive elements, so that an X-axis magnetic sensor and a Y-axis magnetic sensor are realized by adequately arranging the GMR elements relative to the four sides of the quartz substrate. Herein, the magnetization direction of the pinned layer of the magnetoresistive element forms a prescribed angle of 45° relative to the longitudinal direction of the magnetoresistive element or relative to the magnetization direction of the permanent magnet film. Thus, it is possible to reliably suppress offset variations of bridge connections of the GMR elements even when an intense magnetic field is applied; and it is therefore possible to noticeably improve the resistant characteristics to an intense magnetic field.
    • 磁传感器包括磁阻元件和永磁体膜,它们组合在一起以形成形成在具有正方形形状的石英衬底上的GMR元件,其中永磁体膜成对并连接到磁阻元件的两端,使得X 通过将GMR元件相对于石英基板的四个边进行适当配置来实现轴向磁传感器和Y轴磁传感器。 这里,磁阻元件的被钉扎层的磁化方向相对于磁阻元件的长度方向相对于永久磁铁膜的磁化方向形成45°的规定角度。 因此,即使施加强磁场,也可以可靠地抑制GMR元件的桥连接的偏移变化; 因此可以显着地提高对强磁场的电阻特性。
    • 13. 发明授权
    • Orientation data generation method, orientation sensor unit and portable electronic equipment
    • 定向数据生成方法,定向传感器单元和便携式电子设备
    • US07237343B2
    • 2007-07-03
    • US11200051
    • 2005-08-10
    • Hideki SatoYukio Wakui
    • Hideki SatoYukio Wakui
    • G01C17/38
    • G01C17/38
    • Data are input from a geomagnetic sensor that detects magnetic fields in three axial directions, and magnetic field data are measured on the basis of the input data. The measured magnetic field data are sequentially stored, and a determination is made as to whether a plurality of the magnetic field data thus stored lie within a same plane in a three-dimensional orientation space. When it has been determined that the plurality of the magnetic field data lie within the same plane in the three-dimensional orientation space, center coordinates of a circular arc where the stored magnetic field data lie are calculated, as provisional offset values, on the basis of the magnetic field data and in accordance with a predetermined algorithm. Magnetic field data measured after the calculation of the provisional offset values is corrected with the provisional offset values, and an arithmetic operation is performed for determining orientation data on the basis of the corrected magnetic field data.
    • 数据是从检测三轴方向的磁场的地磁传感器输入的,并且根据输入数据测量磁场数据。 依次存储测量的磁场数据,并且确定这样存储的多个磁场数据是否位于三维取向空间中的同一平面内。 当确定多个磁场数据位于三维取向空间中的同一平面内时,计算存储的磁场数据的圆弧的中心坐标作为临时偏移值,基于 的磁场数据并根据预定的算法。 在临时偏移值的计算之后测量的磁场数据用临时偏移值进行校正,并且执行用于基于校正的磁场数据确定取向数据的算术运算。
    • 15. 发明申请
    • MAGNETIC SENSOR AND METHOD OF PRODUCING THE SAME
    • 磁传感器及其制造方法
    • US20070182407A1
    • 2007-08-09
    • US11682841
    • 2007-03-06
    • Hideki SatoToshiyuki OohashiYukio WakuiSusumu YoshidaKokichi Aiso
    • Hideki SatoToshiyuki OohashiYukio WakuiSusumu YoshidaKokichi Aiso
    • G01R15/18G01R33/02
    • B82Y25/00B82Y40/00G01R33/09G01R33/093H01F41/302Y10T29/49002Y10T29/49037Y10T428/32
    • On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrate 10 are formed magnetic layers that will become two magnetic tunnel effect elements 11, 21 as magnetoresistance effect elements. Magnetic-field-applying magnetic layers made of NiCo are formed to sandwich the magnetic layers in plan view. A magnetic field is applied to the magnetic-field-applying magnetic layers. The magnetic field is removed after the magnetic-field-applying magnetic layers are magnetized in the direction shown by arrow A. As a result of this, by the residual magnetization of the magnetic-field-applying magnetic layers, magnetic fields in the directions shown by arrows B are applied to the magnetic layers that will become magnetic tunnel effect elements 11, 21, whereby the magnetization of the pinned layers of the magnetic layers that will become magnetic tunnel effect elements 11, 21 is pinned in the directions shown by arrows B.
    • 在单个芯片上形成有多个磁阻效应元件,该元件具有在彼此交叉的方向上具有固定的磁化轴的固定层。 在基板10上形成作为磁阻效应元件的两个磁隧道效应元件11,21的磁性层。 形成由NiCo制成的磁场施加磁性层,以在平面图中夹着磁性层。 对磁场施加磁性层施加磁场。 在磁场施加磁性层沿着箭头A所示的方向被磁化之后,去除磁场。结果,通过磁场施加磁性层的剩余磁化,所示方向上的磁场 通过箭头B施加到将成为磁隧道效应元件11,21的磁性层,由此将成为磁隧道效应元件11,21的磁性层的被钉扎层的磁化被固定在箭头B所示的方向 。
    • 16. 发明申请
    • Magnetic sensor and manufacturing method therefor
    • 磁传感器及其制造方法
    • US20060268469A1
    • 2006-11-30
    • US11497378
    • 2006-08-02
    • Hideki SatoKokichi AisoYukio Wakui
    • Hideki SatoKokichi AisoYukio Wakui
    • G11B5/33
    • G01R33/093B82Y25/00B82Y40/00G01R33/0005G01R33/09H01F10/3268H01F10/3295H01F41/304Y10T29/49034Y10T29/49043Y10T29/49044Y10T29/49052Y10T29/49067
    • A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the permanent magnet films are paired and connected to both ends of the magnetoresistive elements, so that an X-axis magnetic sensor and a Y-axis magnetic sensor are realized by adequately arranging the GMR elements relative to the four sides of the quartz substrate. Herein, the magnetization direction of the pinned layer of the magnetoresistive element forms a prescribed angle of 45° relative to the longitudinal direction of the magnetoresistive element or relative to the magnetization direction of the permanent magnet film. Thus, it is possible to reliably suppress offset variations of bridge connections of the GMR elements even when an intense magnetic field is applied; and it is therefore possible to noticeably improve the resistant characteristics to an intense magnetic field.
    • 磁传感器包括磁阻元件和永磁体膜,它们组合在一起以形成形成在具有正方形形状的石英衬底上的GMR元件,其中永磁体膜成对并连接到磁阻元件的两端,使得X 通过将GMR元件相对于石英基板的四个边进行适当配置来实现轴向磁传感器和Y轴磁传感器。 这里,磁阻元件的被钉扎层的磁化方向相对于磁阻元件的长度方向相对于永久磁铁膜的磁化方向形成45°的规定角度。 因此,即使施加强磁场,也可以可靠地抑制GMR元件的桥连接的偏移变化; 因此可以显着地提高对强磁场的电阻特性。
    • 19. 发明授权
    • Magnetic sensor formed of magnetoresistance effect elements
    • 磁传感器由磁阻效应元件形成
    • US07589528B2
    • 2009-09-15
    • US11682841
    • 2007-03-06
    • Hideki SatoToshiyuki OohashiYukio WakuiSusumu YoshidaKokichi Aiso
    • Hideki SatoToshiyuki OohashiYukio WakuiSusumu YoshidaKokichi Aiso
    • G01R33/02
    • B82Y25/00B82Y40/00G01R33/09G01R33/093H01F41/302Y10T29/49002Y10T29/49037Y10T428/32
    • On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrate 10 are formed magnetic layers that will become two magnetic tunnel effect elements 11, 21 as magnetoresistance effect elements. Magnetic-field-applying magnetic layers made of NiCo are formed to sandwich the magnetic layers in plan view. A magnetic field is applied to the magnetic-field-applying magnetic layers. The magnetic field is removed after the magnetic-field-applying magnetic layers are magnetized in the direction shown by arrow A. As a result of this, by the residual magnetization of the magnetic-field-applying magnetic layers, magnetic fields in the directions shown by arrows B are applied to the magnetic layers that will become magnetic tunnel effect elements 11, 21, whereby the magnetization of the pinned layers of the magnetic layers that will become magnetic tunnel effect elements 11, 21 is pinned in the directions shown by arrows B.
    • 在单个芯片上形成有多个磁阻效应元件,该元件具有在彼此交叉的方向上具有固定的磁化轴的固定层。 在基板10上形成作为磁阻效应元件的两个磁隧道效应元件11,21的磁性层。 形成由NiCo制成的磁场施加磁性层,以在平面图中夹着磁性层。 对磁场施加磁性层施加磁场。 在磁场施加磁性层沿着箭头A所示的方向被磁化之后,去除磁场。结果,通过磁场施加磁性层的剩余磁化,所示方向上的磁场 通过箭头B施加到将成为磁隧道效应元件11,21的磁性层,由此将成为磁隧道效应元件11,21的磁性层的被钉扎层的磁化被固定在箭头B所示的方向上 。
    • 20. 发明授权
    • Orientation data generation method, orientation sensor unit and portable electronic equipment
    • 定向数据生成方法,定向传感器单元和便携式电子设备
    • US07363718B2
    • 2008-04-29
    • US11750618
    • 2007-05-18
    • Hideki SatoYukio Wakui
    • Hideki SatoYukio Wakui
    • G01C17/38
    • G01C17/38
    • Data are input from a geomagnetic sensor that detects magnetic fields in three axial directions, and magnetic field data are measured on the basis of the input data. The measured magnetic field data are sequentially stored, and a determination is made as to whether a plurality of the magnetic field data thus stored lie within a same plane in a three-dimensional orientation space. When it has been determined that the plurality of the magnetic field data lie within the same plane in the three-dimensional orientation space, center coordinates of a circular arc where the stored magnetic field data lie are calculated, as provisional offset values, on the basis of the magnetic field data and in accordance with a predetermined algorithm. Magnetic field data measured after the calculation of the provisional offset values is corrected with the provisional offset values, and an arithmetic operation is performed for determining orientation data on the basis of the corrected magnetic field data.
    • 数据是从检测三轴方向的磁场的地磁传感器输入的,并且根据输入数据测量磁场数据。 依次存储测量的磁场数据,并且确定这样存储的多个磁场数据是否位于三维取向空间中的同一平面内。 当确定多个磁场数据位于三维取向空间中的同一平面内时,计算存储的磁场数据的圆弧的中心坐标作为临时偏移值,基于 的磁场数据并根据预定的算法。 在临时偏移值的计算之后测量的磁场数据用临时偏移值进行校正,并且执行用于基于校正的磁场数据确定取向数据的算术运算。