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11. 发明授权

US5449922A Bipolar heterojunction diode 失效
标题翻译：双极异质结二极管
公开(公告)号：US5449922A
公开(公告)日：1995-09-12
申请号：US237574
申请日：1994-05-03
申请人： Jun Shen , Herbert Goronkin , Saied N. Tehrani
发明人： Jun Shen , Herbert Goronkin , Saied N. Tehrani
IPC分类号： H01L29/68 , H01L29/06 , H01L29/205 , H01L29/88
CPC分类号： H01L29/205 , H01L29/88
摘要： A bipolar heterojunction diode has an anode (11, 41), a blocking layer (12, 42) and a junction region (13, 14, 43). a heterojunction (32, 58) in the junction region (13, 14, 43) is utilized to create a misalignment between the band gap of the anode (11, 41) and a band gap of the heterojunction (13, 14, 43). The misalignment prevents a depletion region from extending into the heterojunction (13, 14, 43).
摘要翻译：双极异质结二极管具有阳极（11,41），阻挡层（12,42）和接合区域（13,14,33）。在结区域（13,14,13）中的异质结（32,58）被用来产生阳极（11,41）的带隙和异质结（13,14,43）的带隙之间的偏移，。不对准防止耗尽区延伸到异质结（13,14,33）中。

12. 发明授权

US5414274A Quantum multifunction transistor with gated tunneling region 失效
标题翻译：量子多功能晶体管与门控隧道区
公开(公告)号：US5414274A
公开(公告)日：1995-05-09
申请号：US96387
申请日：1993-07-26
申请人： Herbert Goronkin , Saied N. Tehrani , Jun Shen , Xiaodong T. Zhu
发明人： Herbert Goronkin , Saied N. Tehrani , Jun Shen , Xiaodong T. Zhu
IPC分类号： H01L29/06 , H01L29/68 , H01L29/772 , H01L29/205 , H01L29/88
CPC分类号： H01L29/772
摘要： A quantum multifunction transistor including a plurality of conduction layers of semiconductor material with a tunnel barrier layer sandwiched therebetween. The conduction layers each being very thin to form discrete energy levels, and the material being chosen so that discrete energy levels therein are not aligned across the tunnel barrier layer in an equilibrium state. A gate coupled to a portion of one of the conduction layers for aligning, in response to a voltage applied thereto, discrete energy levels in the conduction layers across the tunnel barrier layer, whereby majority carrier current flows through the transistor. Application of a higher voltage to the gate results in minority carrier current flow through the transistor.
摘要翻译：一种量子多功能晶体管，包括多个导电层的半导体材料，其间夹有隧道势垒层。导电层各自非常薄以形成离散的能级，并且选择材料使得其中的离散能级在平衡状态下不跨越隧道势垒层对准。耦合到导电层之一的一部分的栅极，用于响应于施加到其上的电压，对准穿过隧道势垒层的导电层中的离散能级，从而多数载流子流过晶体管。向栅极施加较高的电压导致少数载流子流过晶体管。

13. 发明授权

US5818316A Nonvolatile programmable switch 失效
标题翻译：非易失性可编程开关
公开(公告)号：US5818316A
公开(公告)日：1998-10-06
申请号：US892641
申请日：1997-07-15
申请人： Jun Shen , Saied N. Tehrani , Eugene Chen
发明人： Jun Shen , Saied N. Tehrani , Eugene Chen
IPC分类号： G11C11/50 , G11C23/00 , H01H51/22
CPC分类号： G11C11/50 , G11C23/00
摘要： A nonvolatile programmable switch includes first and second magnetizable conductors having first and second ends, respectively, each of which is a north or south pole. The ends are mounted for relative movement between a first position in which they are in contact and a second position in which they are insulated from each other. The first conductor is permanently magnetized and the second conductor is switchable in response to a magnetic field applied thereto. Programming means are associated with the second conductor for switchably magnetizing the second conductor so that the second end is alternatively a north or south pole. The first and second ends are held in the first position by magnetic attraction and in the second position by magnetic repulsion.
摘要翻译：非易失性可编程开关包括分别具有第一和第二端的第一和第二可磁化导体，其中每一个是北极或南极。端部被安装成在它们接触的第一位置和彼此绝缘的第二位置之间进行相对运动。第一导体被永久磁化，并且第二导体响应于施加到其上的磁场而可切换。编程装置与第二导体相关联，用于可切换地磁化第二导体，使得第二端可选地是北极或南极。第一和第二端通过磁吸引力保持在第一位置，并且在第二位置通过磁力排斥保持。

14. 发明授权

US5659180A Heterojunction interband tunnel diodes with improved P/V current ratios 失效
标题翻译：具有改进的P / V电流比的异质结带间隧道二极管
公开(公告)号：US5659180A
公开(公告)日：1997-08-19
申请号：US556686
申请日：1995-11-13
申请人： Jun Shen , Raymond K. Tsui , Saied N. Tehrani , Herb Goronkin
发明人： Jun Shen , Raymond K. Tsui , Saied N. Tehrani , Herb Goronkin
IPC分类号： H01L29/88 , H01L29/06
CPC分类号： H01L29/88
摘要： A heterojunction tunnel diode with first and second barrier layers, the first barrier layer including aluminum antimonide arsenide. A quantum well formation is sandwiched between the first and second barrier layers, and includes first and second quantum well layers with a barrier layer sandwiched therebetween, the first quantum well layer being adjacent the first barrier layer. The first quantum well layer is gallium antimonide arsenide which produces a peak in hole accumulations therein. The second quantum well layer produces a peak in electron accumulations therein. A monolayer of gallium antimonide is sandwiched in the first quantum well layer at the peak in hole accumulations and a monolayer of indium arsenide is sandwiched in the second quantum well layer at the peak in electron accumulations.
摘要翻译：一种具有第一和第二阻挡层的异质结隧道二极管，所述第一阻挡层包括锑化砷化砷。量子阱形成夹在第一和第二阻挡层之间，并且包括夹在其间的阻挡层的第一和第二量子阱层，第一量子阱层与第一阻挡层相邻。第一量子阱层是在其中产生孔积聚的峰值的锑化锑砷化物。第二量子阱层在其中产生电子积聚中的峰。单层的锑化镓被夹在第一量子阱层中，在空穴积聚的峰值处，并且在电子积累的峰值处将第二量子阱层中的单层砷化铟夹在第二量子阱层中。

15. 发明授权

US5883404A Complementary heterojunction semiconductor device 失效
标题翻译：互补异质结半导体器件
公开(公告)号：US5883404A
公开(公告)日：1999-03-16
申请号：US297279
申请日：1994-08-29
申请人： Herbert Goronkin , Saied Nikoo Tehrani , Jun Shen
发明人： Herbert Goronkin , Saied Nikoo Tehrani , Jun Shen
IPC分类号： H01L29/06 , H01L27/06 , H01L27/092 , H01L27/095 , H01L29/66 , H01L29/80 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： B82Y10/00 , H01L27/0605 , H01L27/092
摘要： A complementary heterojunction semiconductor device (10) has a first resonant interband tunneling transistor (12) coupled to a second resonant interband tunneling transistor (14) through a common output (16). The first transistor (12) has a first gate (18) of a first semiconductor type and a drain (28) coupled to the first gate (18). The first gate (18) is also coupled to the common output (16). The second transistor (14) has a second gate (32) of a second semiconductor type and a source (42) coupled to the second gate (32). The second gate (32) is also coupled to the common output (16). The valence band (60,80,82) of the first semiconductor type has an energy level greater than the conduction band (62,64,84) of the second semiconductor type.
摘要翻译：互补异质结半导体器件（10）具有通过公共输出（16）耦合到第二谐振频带隧穿晶体管（14）的第一谐振频带隧穿晶体管（12）。第一晶体管（12）具有第一半导体类型的第一栅极（18）和耦合到第一栅极（18）的漏极（28）。第一门（18）也耦合到公共输出端（16）。第二晶体管（14）具有第二半导体类型的第二栅极（32）和耦合到第二栅极（32）的源极（42）。第二栅极（32）也耦合到公共输出端（16）。第一半导体类型的价带（60,80,82）具有大于第二半导体类型的导带（62,64,84）的能级。

16. 发明授权

US5412224A Field effect transistor with non-linear transfer characteristic 失效
标题翻译：具有非线性传输特性的场效应晶体管
公开(公告)号：US5412224A
公开(公告)日：1995-05-02
申请号：US894989
申请日：1992-06-08
申请人： Herbert Goronkin , Jun Shen , Saied Tehrani
发明人： Herbert Goronkin , Jun Shen , Saied Tehrani
IPC分类号： H01L29/80 , H01L29/10 , H01L29/778 , H01L29/161 , H01L29/205 , H01L29/225
CPC分类号： H01L29/1029 , H01L29/1054 , H01L29/778
摘要： A field effect semiconductor device having multiple vertically stacked channels (12, 14, 16) separated by barrier layers comprising wide bandgap material (18) is provided. The channels (12, 14, 16) are formed on a wide bandgap buffer layer (11) and each channel is coupled a N-type drain region (22b). Each channel is also coupled to an N-type source region (25b). With appropriate gate bias on a gate electrode (17), quantized energy levels in the channels (12, 14, 16) are aligned to provide self-doping by electrons in the valence band of the P-channel (14) moving to the conduction band of the N-channels (12, 16) providing peak channel conductivity. At higher gate bias, one of the N-channels (12) becomes non-conductive creating a negative resistance region.
摘要翻译：提供了具有由包括宽带隙材料（18）的阻挡层隔开的多个垂直堆叠通道（12,14,16）的场效应半导体器件。通道（12,14,16）形成在宽带隙缓冲层（11）上，每个通道耦合有N型漏区（22b）。每个通道也耦合到N型源极区域（25b）。在栅电极（17）上具有合适的栅极偏置，通道（12,14,16）中的量化能级被对准以提供通过移动到导通的P沟道（14）的价带中的电子的自掺杂带宽的N沟道（12,16）提供峰值沟道导电性。在较高的栅极偏压下，N沟道（12）中的一个变为不导通，产生负电阻区域。

17. 发明授权

US5289014A Semiconductor device having a vertical quantum well via and method for making 失效
标题翻译：具有垂直量子阱的半导体器件及其制造方法
公开(公告)号：US5289014A
公开(公告)日：1994-02-22
申请号：US930958
申请日：1992-08-17
申请人： Herbert Goronkin , Jun Shen , Saied Tehrani , X. Theodore Zhu
发明人： Herbert Goronkin , Jun Shen , Saied Tehrani , X. Theodore Zhu
IPC分类号： H01L21/20 , H01L29/06 , H01L29/76 , H01L29/80 , H01L29/161 , H01L29/205
CPC分类号： B82Y10/00 , H01L29/7613
摘要： A semiconductor device having a vertical interconnect or via stacked formed by quantum well comprising a semiconductor material is provided. A first semiconductor device (11) having a current carrying region (19) is formed in a first horizontal plane. A second semiconductor device (12) having a current carrying region (29) is formed in a second horizontal plane. Each of the current carrying regions have a first quantized energy level that is substantially equal. A semiconductor via (31) couples the current carrying region (19) of the first semiconductor device (11) to the current carrying region (29) of the second device (12), wherein the semiconductor via (31) has a first quantized energy level capable of alignment with the quantized energy levels of the current carrying regions (19, 29) of the first and second semiconductor devices (11,12).
摘要翻译：提供了具有由包括半导体材料的量子阱形成的垂直互连或通过层叠形成的半导体器件。具有载流区域（19）的第一半导体器件（11）形成在第一水平面中。具有载流区域（29）的第二半导体器件（12）形成在第二水平面中。每个电流承载区域具有基本相等的第一量化能级。半导体通孔（31）将第一半导体器件（11）的载流区域（19）耦合到第二器件（12）的载流区域（29），其中半导体通孔（31）具有第一量子化能能够与第一和第二半导体器件（11,12）的载流区域（19,29）的量化能级对准。

18. 发明授权

US5221849A Semiconductor device with active quantum well gate 失效
标题翻译：具有有源量子阱栅的半导体器件
公开(公告)号：US5221849A
公开(公告)日：1993-06-22
申请号：US899439
申请日：1992-06-16
申请人： Herbert Goronkin , Jun Shen , Saied Tehrani , X. Theodore Zhu
发明人： Herbert Goronkin , Jun Shen , Saied Tehrani , X. Theodore Zhu
IPC分类号： H01L29/80 , H01L27/06 , H01L29/10 , H01L29/772
CPC分类号： H01L27/0605 , H01L29/1029 , H01L29/772
摘要： A field effect semiconductor device having multiple vertically stacked channels (12, 14, 16) separated by independent gate electrodes (13, 15) is provided. The channels (12, 14, 16) are formed on a wide bandgap buffer layer (11) and each channel is coupled a drain electrode (21). Each channel is also coupled to a source electrode (25-26). The quantum well channels (12, 14, 16) and quantum well gates (13, 15) are separated from each other by barrier layers (18) of a wide bandgap semiconductor material.
摘要翻译：提供具有由独立的栅电极（13,15）分离的多个垂直堆叠的通道（12,14,16）的场效半导体器件。通道（12,14,16）形成在宽带隙缓冲层（11）上，每个通道与漏电极（21）相连。每个通道也耦合到源电极（25-26）。量子阱通道（12,14,16）和量子阱栅极（13,15）通过宽带隙半导体材料的阻挡层（18）彼此分离。

19. 发明授权

US5587944A High density multistate SRAM and cell 失效
标题翻译：高密度多态SRAM和单元
公开(公告)号：US5587944A
公开(公告)日：1996-12-24
申请号：US617247
申请日：1996-03-18
申请人： Jun Shen , Herbert Goronkin
发明人： Jun Shen , Herbert Goronkin
IPC分类号： G11C11/56 , G11C11/36
CPC分类号： G11C11/56 , G11C11/412 , G11C2211/5614
摘要： A high density multistate SRAM cell including N negative differential resistance diodes connected in series and to a load. The diodes and the load defining a memory node having N+1 stable states. A write transistor having a drain connected to the memory node and adapted to receive N+1 different amplitudes of voltage on the source, and a write signal on the gate. An amplifier having an input terminal connected to the memory node, and a read switch having an input terminal connected to the output terminal of the amplifier. A plurality of cells connected into a matrix with N+1 sense amplifiers associated with each column of the matrix so as to provide an output for each of the N+1 different amplitudes.
摘要翻译：一个高密度多态SRAM单元，包括串联连接到负载的N个负差分电阻二极管。二极管和负载定义具有N + 1个稳定状态的存储器节点。一种写入晶体管，其漏极连接到存储器节点并且适于在源极上接收N + 1个不同的电压幅度，以及栅极上的写入信号。具有连接到存储器节点的输入端的放大器和具有连接到放大器的输出端的输入端的读开关。连接到具有与矩阵的每列相关联的N + 1个读出放大器的矩阵中的多个单元，以便为每个N + 1个不同幅度提供输出。

20. 发明授权

US5355005A Self-doped complementary field effect transistor 失效
标题翻译：自掺杂互补场效应晶体管
公开(公告)号：US5355005A
公开(公告)日：1994-10-11
申请号：US971118
申请日：1992-11-04
申请人： Saied Tehrani , Jun Shen , Herbert Goronkin , Robert Smith
发明人： Saied Tehrani , Jun Shen , Herbert Goronkin , Robert Smith
IPC分类号： H01L27/092 , H01L21/338 , H01L21/8238 , H01L27/06 , H01L27/095 , H01L29/778 , H01L29/812 , H01L31/072 , H01L29/06 , H01L29/80 , H01L31/109
CPC分类号： H01L27/0605 , H01L27/095 , H01L29/7783
摘要： A complementary field effect structure having a first field effect device (26) including a quantum well having a first channel (12). A first doping region (14) is positioned adjacent to a first quantum well and a first gate electrode (29) is positioned so that the first doping region (14) is between the first gate electrode (29) and the first channel (12) . A second field effect device (37) includes a second channel (22) and a second doping region (19) positioned adjacent to the second channel. A second gate electrode (31) is positioned over the second channel (22) so that the second channel (22) is between the second gate electrode (31) and the second doping region (19). An interconnect electrically couples the first gate electrode (29) to the second gate electrode (31).
摘要翻译：具有包括具有第一通道（12）的量子阱的第一场效应器件（26）的互补场效应结构。第一掺杂区域（14）定位成与第一量子阱相邻，并且第一栅电极（29）被定位成使得第一掺杂区域（14）在第一栅电极（29）和第一沟道（12）之间，。第二场效应装置（37）包括邻近第二通道定位的第二通道（22）和第二掺杂区域（19）。第二栅电极（31）位于第二通道（22）上方，使得第二通道（22）位于第二栅极电极（31）和第二掺杂区域（19）之间。互连将第一栅电极（29）电耦合到第二栅电极（31）。

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