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    • 11. 发明申请
    • HEAT SINK FOR POWER MODULE
    • 电源模块散热器
    • US20090314474A1
    • 2009-12-24
    • US11919368
    • 2006-04-19
    • Masahiko KimbaraKeiji TohHidehito KuboKatsufumi TanakaKota OtoshiEiji KonoNobuhiro WakabayashiShintaro NakagawaYuichi FurukawaShinobu Yamauchi
    • Masahiko KimbaraKeiji TohHidehito KuboKatsufumi TanakaKota OtoshiEiji KonoNobuhiro WakabayashiShintaro NakagawaYuichi FurukawaShinobu Yamauchi
    • H05K7/20F28D15/00F28F3/12
    • H01L23/473F28F3/086F28F3/12H01L23/3731H01L23/3736H01L2224/48091H01L2224/48137H01L2924/00014
    • A heat sink for a power module able to realize a further improvement of heat radiating performance and a further improvement of a mounting property is provided.The heat sink 1 for a power module has a laminating body 20, a first side plate 30 and a second side plate 40. The laminating body 20 has plural flow path plates 21 formed in a plate shape in which plural grooves 23 parallel to each other are concavely arranged on a flat joining face 22. Each groove 23 is set to a parallel flow path 50 parallel to a front face side by laminating each flow path plate 21 by each joining face 22. A portion other than each groove 23 of each joining face 22 forms a heat transfer path 70a to each parallel flow path 50 of a laminating direction. A flow-in path 30a and a flow-out path 40a are formed in the first and second side plates 30, 40. The flow-in path 30a and the flow-out path 40a are joined to side faces 26a, 26b of the laminating body 20, and are communicated with each parallel flow path 50. The flow-in path 30a flows a cooling medium into each parallel flow path 50. The flow-out path 40a flows the cooling medium out of each parallel flow path 50. A refrigerant flow path is constructed by the flow-in path 30a, each parallel flow path 50 and the flow-out path 40a.
    • 提供了能够实现进一步提高散热性能的功率模块的散热器,并且进一步提高了安装特性。 用于功率模块的散热器1具有层叠体20,第一侧板30和第二侧板40.层叠体20具有多个形成为板状的流路板21,多个相互平行的槽23 凹陷地布置在平坦的接合面22上。每个槽23通过每个接合面22层压每个流路板21而设置成平行于前表面的平行流动路径50.每个连接的每个槽23之外的部分 面22对层叠方向的各平行流路50形成传热路径70a。 在第一和第二侧板30,40中形成有流入路径30a和流出路径40a。流入路径30a和流出路径40a与层叠的侧面26a,26b接合 主体20并与每个平行流动路径50连通。流入路径30a将冷却介质流入每个平行流动路径50.流出路径40a将冷却介质从每个平行流动路径50流出。制冷剂 流路由流入路径30a,每个平行流路50和流出路径40a构成。
    • 17. 发明授权
    • HDMI source detection
    • HDMI源检测
    • US08625029B2
    • 2014-01-07
    • US12002378
    • 2007-12-17
    • Paul DoyleEiji KonoTetsuya NomuraPeter Rae Shintani
    • Paul DoyleEiji KonoTetsuya NomuraPeter Rae Shintani
    • H04N7/00H04N11/00H04N5/44H04N3/27H04N5/46
    • H04N5/44G09G5/006G09G2320/08G09G2370/047G09G2370/12H01R13/641H04N21/43635H04N21/44231
    • A circuit for detection of an HDMI source device to an HDMI sink device through an HDMI sink connector without regard for the activity state of the HDMI source device has a pull-up resistor having first and second terminals with the first terminal coupled to a DC power source. A switching device is coupled between the pull-up resistor's second terminal and ground at a circuit node. The switching device is switched on to couple the circuit node to ground when power is applied to a control terminal thereof from the HDMI sink connector power pin, and being switched off otherwise. The circuit node is coupled to a DDC/CEC GROUND pin of the HDMI sink connector. The circuit node is readable as a binary signal to indicate the presence of a source device to the HDMI sink connector, wherein the node exhibits a logic low signal when either the node is grounded by the DDC/CEC GROUND pin connection to a source device or when the switching device is switched on. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.
    • 用于通过HDMI接收器连接器将HDMI源设备检测到HDMI信宿设备的电路不考虑HDMI源设备的活动状态,具有上拉电阻器,其具有第一和第二端子,其中第一端子耦合到DC电源 资源。 开关器件在电路节点处耦合在上拉电阻器的第二端子和地之间。 当从HDMI接收器连接器电源引脚向其控制端施加电力时,切换装置被接通以将电路节点耦合到地,否则被切断。 电路节点耦合到HDMI接收器连接器的DDC / CEC GROUND引脚。 电路节点可读取为二进制信号,以指示源设备到HDMI接收器连接器的存在,其中当节点通过DDC / CEC GROUND引脚连接到源设备接地时,节点呈现逻辑低信号,或 当开关器件接通时。 该摘要不被认为是限制性的,因为其他实施例可能偏离本摘要中描述的特征。
    • 19. 发明授权
    • Radiator member for electronic appliances and processes for producing the same
    • 用于电子设备的散热器构件及其制造方法
    • US07364632B2
    • 2008-04-29
    • US10472802
    • 2002-03-14
    • Katsufumi TanakaTomohei SugiyamaKyoichi KinoshitaEiji KonoNaohisa Nishino
    • Katsufumi TanakaTomohei SugiyamaKyoichi KinoshitaEiji KonoNaohisa Nishino
    • C22C21/00C22C29/02
    • C22C29/065B22F2999/00C22C1/1036C22C32/0063C22C2001/1073H01L23/3733H01L2924/0002Y10T428/12736B22F1/0014H01L2924/00
    • The present invention is a process for producing a radiator member for electronic appliances, and is characterized in that, in a process for producing a radiator member for electronic appliances, the radiator member comprising a composite material in which SiC particles are dispersed in a matrix metal whose major component is Al, it comprises a filling step of filling an SiC powder into a mold, a pre-heating step of pre-heating the mold after the filling step to a pre-heating temperature which falls in a range of from a melting point or more of said matrix metal to less than a reaction initiation temperature at which a molten metal of the matrix metal and SiC particles in the SiC powder start to react, and a pouring step of pouring the molten matrix metal whose molten-metal temperature falls in a range of from the melting point or more of the matrix metal to less than the reaction initiation temperature, into the mold after the pre-heating step, and impregnating the SiC powder with the molten metal by pressurizing.When the molten-metal temperature and the pre-heating temperature are from the melting point or more of the matrix metal to less than the reaction initiator temperature, it is possible to inhibit the generation of low thermal conductive materials while securing the impregnation of the molten metal into the SiC powder.
    • 本发明是一种电子电器用散热构件的制造方法,其特征在于,在电子电器用散热构件的制造方法中,散热构件包括SiC颗粒分散在基体金属中的复合材料 其主要成分是Al,其包括将SiC粉末填充到模具中的填充步骤,在填充步骤之后将模具预加热到预热温度的预热步骤,该预热温度落在熔化范围内 所述基体金属的一个或多个点小于SiC粉末中的基体金属和SiC颗粒的熔融金属开始反应的反应引发温度,以及将熔融金属温度下降的熔融基质金属倒出的倾倒步骤 在从基体金属的熔点以上到小于反应开始温度的范围内,在预热工序后进入模具,并将SiC粉末浸渍在 通过加压熔融金属。 当熔融金属温度和预热温度从基体金属的熔点或更高温度到小于反应引发剂温度时,可以在确保浸渍熔融金属的温度的同时,抑制低导热材料的产生 金属进入SiC粉末。