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11. 发明授权

US08748288B2 Bonded structure with enhanced adhesion strength 失效
标题翻译：粘合结构具有增强的粘合强度
公开(公告)号：US08748288B2
公开(公告)日：2014-06-10
申请号：US12700813
申请日：2010-02-05
申请人： Mukta G. Farooq , Zhengwen Li , Zhijiong Luo , Huilong Zhu
发明人： Mukta G. Farooq , Zhengwen Li , Zhijiong Luo , Huilong Zhu
IPC分类号： H01L23/48
CPC分类号： H01L23/5384 , B32B3/085 , B32B7/12 , B32B15/20 , B32B27/283 , B32B2307/20 , B32B2307/202 , B32B2307/204 , B32B2307/704 , B32B2307/732 , B32B2457/14 , C22C9/00 , C23C14/48 , H01L23/481 , H01L24/29 , H01L24/32 , H01L24/83 , H01L25/0657 , H01L2224/80357 , H01L2224/8082 , H01L2224/80895 , H01L2224/80896 , H01L2224/838 , H01L2224/8382 , H01L2225/06541 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/19041 , Y10T428/12472 , H01L2924/01014 , H01L2924/01032 , H01L2924/00 , H01L2924/00014
摘要： A first bonding material layer is formed on a first substrate and a second bonding material layer is formed on a second substrate. The first and second bonding material layers include a metal. Ions are implanted into the first and second bonding material layers to induce structural damages in the in the first and second bonding material layers. The first and second substrates are bonded by forming a physical contact between the first and second bonding material layers. The structural damages in the first and second bonding material layers enhance diffusion of materials across the interface between the first and second bonding material layers to form a bonded material layer in which metal grains are present across the bonding interface, thereby providing a high adhesion strength across the first and second substrates.
摘要翻译：在第一基板上形成第一接合材料层，在第二基板上形成第二接合材料层。第一和第二接合材料层包括金属。将离子注入到第一和第二接合材料层中以在第一和第二接合材料层中引起结构损伤。第一和第二基板通过在第一和第二接合材料层之间形成物理接触来结合。在第一和第二接合材料层中的结构损伤增强了材料在第一和第二接合材料层之间的界面上的扩散，以形成结合材料层，其中金属颗粒存在于结合界面上，由此提供了高粘合强度第一和第二基板。

12. 发明授权

US08105937B2 Conformal adhesion promoter liner for metal interconnects 失效
标题翻译：用于金属互连的保形粘合促进剂衬垫
公开(公告)号：US08105937B2
公开(公告)日：2012-01-31
申请号：US12190906
申请日：2008-08-13
申请人： Tien-Jen Cheng , Zhengwen Li , Keith Kwong Hon Wong , Huilong Zhu
发明人： Tien-Jen Cheng , Zhengwen Li , Keith Kwong Hon Wong , Huilong Zhu
IPC分类号： H01L21/44
CPC分类号： H01L23/53238 , H01L21/28556 , H01L21/28562 , H01L21/76846 , H01L21/76864 , H01L21/76868 , H01L21/76877 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： A dielectric layer is patterned with at least one line trough and/or at least one via cavity. A metallic nitride liner is formed on the surfaces of the patterned dielectric layer. A metal liner is formed on the surface of the metallic nitride liner. A conformal copper nitride layer is formed directly on the metal liner by atomic layer deposition (ALD) or chemical vapor deposition (CVD). A Cu seed layer is formed directly on the conformal copper nitride layer. The at least one line trough and/or the at least one via cavity are filled with an electroplated material. The direct contact between the conformal copper nitride layer and the Cu seed layer provides enhanced adhesion strength. The conformal copper nitride layer may be annealed to covert an exposed outer portion into a contiguous Cu layer, which may be employed to reduce the thickness of the Cu seed layer.
摘要翻译：用至少一个线槽和/或至少一个通孔腔对电介质层进行构图。金属氮化物衬垫形成在图案化电介质层的表面上。在金属氮化物衬垫的表面上形成金属衬垫。通过原子层沉积（ALD）或化学气相沉积（CVD）直接在金属衬垫上形成共形的氮化铜层。在适形的氮化铜层上直接形成Cu籽晶层。至少一个线槽和/或至少一个通孔腔被电镀材料填充。保形氮化铜层和Cu籽晶层之间的直接接触提供了增强的粘合强度。可以将共形的氮化铜层退火以将暴露的外部部分翻转成连续的Cu层，其可用于减小Cu籽晶层的厚度。

13. 发明申请

US20110193240A1 BONDED STRUCTURE WITH ENHANCED ADHESION STRENGTH 失效
标题翻译：具有增强粘合强度的粘结结构
公开(公告)号：US20110193240A1
公开(公告)日：2011-08-11
申请号：US12700813
申请日：2010-02-05
申请人： Mukta G. Farooq , Zhengwen Li , Zhijiong Luo , Huilong Zhu
发明人： Mukta G. Farooq , Zhengwen Li , Zhijiong Luo , Huilong Zhu
IPC分类号： H01L23/48 , B32B15/04 , B23K31/02
CPC分类号： H01L23/5384 , B32B3/085 , B32B7/12 , B32B15/20 , B32B27/283 , B32B2307/20 , B32B2307/202 , B32B2307/204 , B32B2307/704 , B32B2307/732 , B32B2457/14 , C22C9/00 , C23C14/48 , H01L23/481 , H01L24/29 , H01L24/32 , H01L24/83 , H01L25/0657 , H01L2224/80357 , H01L2224/8082 , H01L2224/80895 , H01L2224/80896 , H01L2224/838 , H01L2224/8382 , H01L2225/06541 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/19041 , Y10T428/12472 , H01L2924/01014 , H01L2924/01032 , H01L2924/00 , H01L2924/00014
摘要： A first bonding material layer is formed on a first substrate and a second bonding material layer is formed on a second substrate. The first and second bonding material layers include a metal. Ions are implanted into the first and second bonding material layers to induce structural damages in the in the first and second bonding material layers. The first and second substrates are bonded by forming a physical contact between the first and second bonding material layers. The structural damages in the first and second bonding material layers enhance diffusion of materials across the interface between the first and second bonding material layers to form a bonded material layer in which metal grains are present across the bonding interface, thereby providing a high adhesion strength across the first and second substrates.
摘要翻译：在第一基板上形成第一接合材料层，在第二基板上形成第二接合材料层。第一和第二接合材料层包括金属。将离子注入到第一和第二接合材料层中以在第一和第二接合材料层中引起结构损伤。第一和第二基板通过在第一和第二接合材料层之间形成物理接触来结合。在第一和第二接合材料层中的结构损伤增强了材料在第一和第二接合材料层之间的界面上的扩散，以形成接合材料层，其中金属颗粒存在于结合界面上，由此提供了高粘合强度第一和第二基板。

14. 发明申请

US20110183520A1 Method for Removing Copper Oxide Layer 失效
标题翻译：去除氧化铜层的方法
公开(公告)号：US20110183520A1
公开(公告)日：2011-07-28
申请号：US12695273
申请日：2010-01-28
申请人： Tien-Jen Cheng , Stephan Grunow , Zhengwen Li , Huilong Zhu
发明人： Tien-Jen Cheng , Stephan Grunow , Zhengwen Li , Huilong Zhu
IPC分类号： H01L21/306
CPC分类号： H01L21/02074 , C23G5/00
摘要： The invention is directed to a method for removing copper oxide from a copper surface to provide a clean copper surface, wherein the method involves exposing the copper surface containing copper oxide thereon to an anhydrous vapor containing a carboxylic acid compound therein, wherein the anhydrous vapor is generated from an anhydrous organic solution containing the carboxylic acid and one or more solvents selected from hydrocarbon and ether solvents.
摘要翻译：本发明涉及从铜表面去除氧化铜以提供清洁的铜表面的方法，其中所述方法包括将含有氧化铜的铜表面暴露于其中含有羧酸化合物的无水蒸气，其中无水蒸气为由含有羧酸的无水有机溶液和选自烃和醚溶剂的一种或多种溶剂产生。

15. 发明申请

US20110168434A1 BONDED STRUCTURE EMPLOYING METAL SEMICONDUCTOR ALLOY BONDING 有权
标题翻译：使用金属半导体合金接合的结合结构
公开(公告)号：US20110168434A1
公开(公告)日：2011-07-14
申请号：US12685954
申请日：2010-01-12
申请人： Mukta G. Farooq , Zhengwen Li , Zhijiong Luo , Huilong Zhu
发明人： Mukta G. Farooq , Zhengwen Li , Zhijiong Luo , Huilong Zhu
IPC分类号： H05K1/09 , B05D5/12 , H05K1/02
CPC分类号： H01L21/76841 , H01L21/2007 , H01L27/0688 , H01L2224/80357 , H01L2224/80895 , H01L2224/80896
摘要： Vertical stacks of a metal portion and a semiconductor portion formed on a first substrate are brought into physical contact with vertical stacks of a metal portion and a semiconductor portion formed on a second substrate. Alternately, vertical stacks of a metal portion and a semiconductor portion formed on a first substrate are brought into physical contact with metal portions formed on a second substrate. The assembly of the first and second substrates is subjected to an anneal at a temperature that induces formation of a metal semiconductor alloy derived from the semiconductor portions and the metal portions. The first substrate and the second substrate are bonded through metal semiconductor alloy portions that adhere to the first and second substrates.
摘要翻译：形成在第一基板上的金属部分和半导体部分的垂直叠层与形成在第二基板上的金属部分和半导体部分的垂直叠层物理接触。或者，形成在第一基板上的金属部分和半导体部分的垂直堆叠与形成在第二基板上的金属部分物理接触。在引起由半导体部分和金属部分衍生的金属半导体合金的形成的温度下对第一和第二基板的组装进行退火。第一基板和第二基板通过粘附到第一和第二基板的金属半导体合金部分接合。

16. 发明申请

US20110162875A1 SELECTIVE COPPER ENCAPSULATION LAYER DEPOSITION 有权
标题翻译：选择铜包层沉积
公开(公告)号：US20110162875A1
公开(公告)日：2011-07-07
申请号：US12683857
申请日：2010-01-07
申请人： Tien-Jen Cheng , Abhishek Dube , Zhengwen Li , Huilong Zhu
发明人： Tien-Jen Cheng , Abhishek Dube , Zhengwen Li , Huilong Zhu
IPC分类号： H05K1/09 , B05D5/12
CPC分类号： H01L21/76834 , H01L21/76826 , H01L21/76832 , H05K3/282 , H05K3/388 , H05K3/4682
摘要： A metal interconnect structure provides high adhesive strength between copper atoms in a copper-containing structure and a self-aligned copper encapsulation layer, which is selectively deposited only on exposed copper surfaces. A lower level metal interconnect structure comprises a first dielectric material layer and a copper-containing structure embedded in a lower metallic liner. After a planarization process that forms the copper-containing structure, a material that forms Cu—S bonds with exposed surfaces of the copper-containing structure is applied to the surface of the copper-containing structure. The material is selectively deposited only on exposed Cu surfaces, thereby forming a self-aligned copper encapsulation layer, and provides a high adhesion strength to the copper surface underneath. A dielectric cap layer and an upper level metal interconnect structure can be subsequently formed on the copper encapsulation layer.
摘要翻译：金属互连结构在含铜结构中的铜原子和自对准铜封装层之间提供高粘合强度，其仅选择性地沉积在暴露的铜表面上。下层金属互连结构包括第一介电材料层和嵌入在下金属衬里中的含铜结构。在形成含铜结构的平坦化工艺之后，将含铜结构体的露出表面形成Cu-S键的材料施加到含铜结构体的表面。该材料仅选择性地沉积在暴露的Cu表面上，从而形成自对准的铜封装层，并且对下面的铜表面提供高粘附强度。随后可以在铜封装层上形成电介质盖层和上层金属互连结构。

17. 发明授权

US08415252B2 Selective copper encapsulation layer deposition 有权
标题翻译：选择性铜包层沉积
公开(公告)号：US08415252B2
公开(公告)日：2013-04-09
申请号：US12683857
申请日：2010-01-07
申请人： Tien-Jen Cheng , Abhishek Dube , Zhengwen Li , Huilong Zhu
发明人： Tien-Jen Cheng , Abhishek Dube , Zhengwen Li , Huilong Zhu
IPC分类号： H01L21/44
CPC分类号： H01L21/76834 , H01L21/76826 , H01L21/76832 , H05K3/282 , H05K3/388 , H05K3/4682
摘要： A metal interconnect structure provides high adhesive strength between copper atoms in a copper-containing structure and a self-aligned copper encapsulation layer, which is selectively deposited only on exposed copper surfaces. A lower level metal interconnect structure comprises a first dielectric material layer and a copper-containing structure embedded in a lower metallic liner. After a planarization process that forms the copper-containing structure, a material that forms Cu—S bonds with exposed surfaces of the copper-containing structure is applied to the surface of the copper-containing structure. The material is selectively deposited only on exposed Cu surfaces, thereby forming a self-aligned copper encapsulation layer, and provides a high adhesion strength to the copper surface underneath. A dielectric cap layer and an upper level metal interconnect structure can be subsequently formed on the copper encapsulation layer.
摘要翻译：金属互连结构在含铜结构中的铜原子和自对准铜封装层之间提供高粘合强度，其仅选择性地沉积在暴露的铜表面上。下层金属互连结构包括第一介电材料层和嵌入在下金属衬里中的含铜结构。在形成含铜结构的平坦化工艺之后，将含铜结构体的露出表面形成Cu-S键的材料施加到含铜结构体的表面。该材料仅选择性地沉积在暴露的Cu表面上，从而形成自对准的铜封装层，并且对下面的铜表面提供高粘附强度。随后可以在铜封装层上形成电介质盖层和上层金属互连结构。

18. 发明授权

US07768006B2 Field effect structure and method including spacer shaped metal gate with asymmetric source and drain regions 有权
标题翻译：场效应结构和方法包括具有不对称源极和漏极区域的间隔金属栅极
公开(公告)号：US07768006B2
公开(公告)日：2010-08-03
申请号：US12129033
申请日：2008-05-29
申请人： Huilong Zhu , Zhengwen Li
发明人： Huilong Zhu , Zhengwen Li
IPC分类号： H01L31/00
CPC分类号： H01L29/66545 , H01L21/26586 , H01L21/2815 , H01L29/66659 , H01L29/7835
摘要： A semiconductor structure and a method for fabricating the semiconductor structure provide a field effect device, such as a field effect transistor, that includes a spacer shaped metal gate located over a channel within a semiconductor substrate that separates a plurality of source and drain regions within the semiconductor substrate. Within the semiconductor structure, the plurality of source and drain regions is asymmetric with respect to the spacer shaped metal gate. The particular semiconductor structure may be fabricated using a self aligned dummy gate method that uses a portion of a spacer as a self alignment feature when forming the spacer shaped metal gate, which may have a sub-lithographic linewidth.
摘要翻译：半导体结构和半导体结构的制造方法提供场效应晶体管等场效应晶体管，该场效应晶体管包括位于半导体衬底内的通道之间的间隔金属栅极，该隔离物形金属栅极将多个源极和漏极区域分隔开，半导体衬底。在半导体结构内，多个源极和漏极区域相对于间隔物金属栅极是不对称的。可以使用自对准的虚拟栅极方法来制造特定的半导体结构，该方法在形成可具有亚光刻线宽的间隔物金属栅极时，使用间隔物的一部分作为自对准特征。

19. 发明授权

US09017486B2 Deposition chamber cleaning method including stressed cleaning layer 有权
公开(公告)号：US09017486B2
公开(公告)日：2015-04-28
申请号：US12878128
申请日：2010-09-09
申请人： Tien-Jen Cheng , Zhengwen Li , Keith Kwong Hon Wong
发明人： Tien-Jen Cheng , Zhengwen Li , Keith Kwong Hon Wong
IPC分类号： B08B7/00 , B08B7/04 , C23C16/44 , C23C14/34
CPC分类号： B08B7/04 , B08B7/0014 , C23C14/34 , C23C16/4404
摘要： A method for cleaning a deposition chamber includes forming a deposited layer over an interior surface of the deposition chamber, wherein the deposited layer has a deposited layer stress and a deposited layer modulus; forming a cleaning layer over the deposited layer, wherein a material comprising the cleaning layer is selected such that the cleaning layer adheres to the deposited layer, and has a cleaning layer stress and a cleaning layer modulus, wherein the cleaning layer stress is higher than the deposited layer stress, and wherein the cleaning layer modulus is higher than the deposited layer modulus; and removing the deposited layer and the cleaning layer from the interior of the deposition chamber.

20. 发明授权

US08916435B2 Self-aligned bottom plate for metal high-K dielectric metal insulator metal (MIM) embedded dynamic random access memory 有权
标题翻译：用于金属高K绝缘子金属（MIM）嵌入式动态随机存取存储器的自对准底板
公开(公告)号：US08916435B2
公开(公告)日：2014-12-23
申请号：US13228767
申请日：2011-09-09
申请人： Zhengwen Li , Damon B. Farmer , Michael P. Chudzik , Keith Kwong Hon Wong , Jian Yu , Zhen Zhang , Chengwen Pei
发明人： Zhengwen Li , Damon B. Farmer , Michael P. Chudzik , Keith Kwong Hon Wong , Jian Yu , Zhen Zhang , Chengwen Pei
IPC分类号： H01L21/8242 , H01L27/12 , H01L27/108 , H01L49/02 , H01L21/84 , H01L29/94
CPC分类号： H01L27/10829 , H01L21/84 , H01L27/10861 , H01L27/1203 , H01L28/91 , H01L29/945
摘要： A memory device, and a method of forming a memory device, is provided that includes a capacitor with a lower electrode of a metal semiconductor alloy. In one embodiment, the memory device includes a trench present in a semiconductor substrate including a semiconductor on insulating (SOI) layer on top of a buried dielectric layer, wherein the buried dielectric layer is on top of a base semiconductor layer. A capacitor is present in the trench, wherein the capacitor includes a lower electrode of a metal semiconductor alloy having an upper edge that is self-aligned to the upper surface of the base semiconductor layer, a high-k dielectric node layer, and an upper electrode of a metal. The memory device further includes a pass transistor in electrical communication with the capacitor.
摘要翻译：提供一种存储器件和形成存储器件的方法，其包括具有金属半导体合金的下电极的电容器。在一个实施例中，存储器件包括存在于半导体衬底中的沟槽，其包括在掩埋介电层顶部上的绝缘（SOI）半导体层，其中所述掩埋介电层位于基底半导体层的顶部。电容器存在于沟槽中，其中电容器包括金属半导体合金的下电极，其具有与基底半导体层的上表面自对准的上边缘，高k电介质节点层和上层金属电极。存储器件还包括与电容器电连通的传输晶体管。

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