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11. 发明申请

US20110068360A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光元件，其制造方法和发光装置
公开(公告)号：US20110068360A1
公开(公告)日：2011-03-24
申请号：US12955620
申请日：2010-11-29
申请人： Hajime NAGO , Koichi Tachibana , Kotaro Zaima , Shinji Saito , Shinya Nunoue , Toshiyuki Oka
发明人： Hajime NAGO , Koichi Tachibana , Kotaro Zaima , Shinji Saito , Shinya Nunoue , Toshiyuki Oka
IPC分类号： H01L33/60 , H01L33/32
CPC分类号： H01L33/32 , F21K9/00 , H01L27/156 , H01L33/16 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05639 , H01L2224/05644 , H01L2224/05666 , H01L2224/05669 , H01L2224/16 , H01L2224/73265 , H01L2924/00014 , H01L2924/181 , H01L2924/00012 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion.
摘要翻译：本发明提供了一种具有优异显色特性的半导体发光元件，一种半导体发光元件的制造方法和一种发光器件。半导体发光元件包括：半导体衬底，其具有作为上表面的倾斜面的凸部和形成在凸部的任一侧上的凹部，凹部的宽度比凸部小，凹部的底面位于比凸部的上表面更深的位置; 以及由氮化物系半导体构成并形成在半导体基板上至少覆盖凸部的发光层。

12. 发明申请

US20080237569A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光元件，其制造方法和发光装置
公开(公告)号：US20080237569A1
公开(公告)日：2008-10-02
申请号：US12037358
申请日：2008-02-26
申请人： Hajime NAGO , Koichi Tachibana , Kotaro Zaima , Shinji Saito , Shinya Nunoue , Toshiyuki Oka
发明人： Hajime NAGO , Koichi Tachibana , Kotaro Zaima , Shinji Saito , Shinya Nunoue , Toshiyuki Oka
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , F21K9/00 , H01L27/156 , H01L33/16 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05639 , H01L2224/05644 , H01L2224/05666 , H01L2224/05669 , H01L2224/16 , H01L2224/73265 , H01L2924/00014 , H01L2924/181 , H01L2924/00012 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion.
摘要翻译：本发明提供了一种具有优异显色特性的半导体发光元件，一种半导体发光元件的制造方法和一种发光器件。半导体发光元件包括：半导体衬底，其具有作为上表面的倾斜面的凸部和形成在凸部的任一侧上的凹部，凹部的宽度比凸部小，凹部的底面位于比凸部的上表面更深的位置; 以及由氮化物系半导体构成并形成在半导体基板上至少覆盖凸部的发光层。

13. 发明授权

US08643044B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08643044B2
公开(公告)日：2014-02-04
申请号：US13222912
申请日：2011-08-31
申请人： Koichi Tachibana , Shigeya Kimura , Toshiki Hikosaka , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
发明人： Koichi Tachibana , Shigeya Kimura , Toshiki Hikosaka , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structure body, first and second electrodes, and a pad layer. The body includes first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of second conductivity type. The first semiconductor layer has first and second portions. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode is provided on the first portion. The second electrode is provided on the second semiconductor layer and is transmittable to light emitted from the light emitting layer. The pad layer is connected to the second electrode. A transmittance of the pad layer is lower than that of the second electrode. A sheet resistance of the second electrode increases continuously along a direction from the pad layer toward the first electrode.
摘要翻译：根据一个实施例，半导体发光器件包括：堆叠结构体，第一和第二电极以及衬垫层。主体包括第一导电类型的第一半导体层，发光层和第二导电类型的第二半导体层。第一半导体层具有第一和第二部分。发光层设置在第二部分上。第二半导体层设置在发光层上。第一电极设置在第一部分上。第二电极设置在第二半导体层上，并且可透射到从发光层发射的光。焊盘层连接到第二电极。焊盘层的透射率低于第二电极的透射率。第二电极的薄层电阻沿着从衬垫层向第一电极的方向连续地增加。

14. 发明申请

US20120061713A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120061713A1
公开(公告)日：2012-03-15
申请号：US13222912
申请日：2011-08-31
申请人： Koichi Tachibana , Shigeya Kimura , Toshiki Hikosaka , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
发明人： Koichi Tachibana , Shigeya Kimura , Toshiki Hikosaka , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/42
CPC分类号： H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structure body, first and second electrodes, and a pad layer. The body includes first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of second conductivity type. The first semiconductor layer has first and second portions. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode is provided on the first portion. The second electrode is provided on the second semiconductor layer and is transmittable to light emitted from the light emitting layer. The pad layer is connected to the second electrode. A transmittance of the pad layer is lower than that of the second electrode. A sheet resistance of the second electrode increases continuously along a direction from the pad layer toward the first electrode.
摘要翻译：根据一个实施例，半导体发光器件包括：堆叠结构体，第一和第二电极以及衬垫层。主体包括第一导电类型的第一半导体层，发光层和第二导电类型的第二半导体层。第一半导体层具有第一和第二部分。发光层设置在第二部分上。第二半导体层设置在发光层上。第一电极设置在第一部分上。第二电极设置在第二半导体层上，并且可透射到从发光层发射的光。焊盘层连接到第二电极。焊盘层的透射率低于第二电极的透射率。第二电极的薄层电阻沿着从衬垫层向第一电极的方向连续地增加。

15. 发明授权

US09006013B2 Method for manufacturing semiconductor light emitting device and semiconductor light emitting device wafer 有权
标题翻译：制造半导体发光器件和半导体发光器件晶片的方法
公开(公告)号：US09006013B2
公开(公告)日：2015-04-14
申请号：US13405634
申请日：2012-02-27
申请人： Toru Gotoda , Toshiyuki Oka , Shinya Nunoue , Kotaro Zaima , Hiroshi Ono , Hajime Nago
发明人： Toru Gotoda , Toshiyuki Oka , Shinya Nunoue , Kotaro Zaima , Hiroshi Ono , Hajime Nago
IPC分类号： H01L21/00 , H01L21/30 , H01L21/46 , H01L33/00 , H01L21/20 , H01L33/20 , H01S5/02 , H01S5/323
CPC分类号： H01L33/007 , H01L21/2011 , H01L33/0079 , H01L33/20 , H01S5/0213 , H01S5/0217 , H01S5/32341
摘要： According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include forming a nitride semiconductor layer including a light emitting layer on a first substrate having an unevenness, bonding the nitride layer to a second substrate, and separating the first substrate from the nitride layer by irradiating the nitride layer with light. The forming the nitride layer includes leaving a cavity in a space inside a depression of the unevenness while forming a thin film on the depression. The film includes a same material as part of the nitride layer. The separating includes causing the film to absorb part of the light so that intensity of the light applied to a portion of the nitride layer facing the depression is made lower than intensity of the light applied to a portion facing a protrusion of the unevenness.
摘要翻译：根据一个实施例，公开了一种用于制造半导体发光器件的方法。该方法可以包括在具有不平坦度的第一衬底上形成包括发光层的氮化物半导体层，将氮化物层接合到第二衬底，并且通过用光照射氮化物层将第一衬底与氮化物层分离。形成氮化物层包括在凹凸的凹陷内的空间中留下空腔，同时在凹陷上形成薄膜。该膜包括与氮化物层的一部分相同的材料。分离包括使膜吸收部分光，使得施加到面向凹陷的氮化物层的一部分的光的强度低于施加到面对凹凸的突出部的部分的光的强度。

16. 发明授权

US08680548B2 Semiconductor light emitting device and method of fabricating semiconductor light emitting device 有权
标题翻译：半导体发光器件及半导体发光器件的制造方法
公开(公告)号：US08680548B2
公开(公告)日：2014-03-25
申请号：US12874568
申请日：2010-09-02
申请人： Toru Gotoda , Hajime Nago , Toshiyuki Oka , Kotaro Zaima , Shinya Nunoue
发明人： Toru Gotoda , Hajime Nago , Toshiyuki Oka , Kotaro Zaima , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/44 , H01L33/60 , H01L2224/11 , H01L2933/0041 , H01L2933/005
摘要： A semiconductor light emitting device has a support substrate, a light emitting element, and underfill material. The light emitting element includes a nitride-based group III-V compound semiconductor layer contacted via a bump on the support substrate. The underfill material is disposed between the support substrate and the light emitting element, the underfill material comprising a rib portion disposed outside of an end face of the light emitting element to surround the end surface of the light emitting element.
摘要翻译：半导体发光器件具有支撑衬底，发光元件和底部填充材料。发光元件包括通过支撑衬底上的凸块接触的基于氮化物的III-V族化合物半导体层。底部填充材料设置在支撑基板和发光元件之间，底部填充材料包括布置在发光元件的端面外侧的肋部，以围绕发光元件的端面。

17. 发明授权

US08390012B2 Semiconductor light emitting device and method of fabricating semiconductor light emitting device 有权
公开(公告)号：US08390012B2
公开(公告)日：2013-03-05
申请号：US12874568
申请日：2010-09-02
申请人： Toru Gotoda , Hajime Nago , Toshiyuki Oka , Kotaro Zaima , Shinya Nunoue
发明人： Toru Gotoda , Hajime Nago , Toshiyuki Oka , Kotaro Zaima , Shinya Nunoue
IPC分类号： H01L33/00
摘要： A semiconductor light emitting device has a support substrate, a light emitting element, and underfill material. The light emitting element includes a nitride-based group III-V compound semiconductor layer contacted via a bump on the support substrate. The underfill material is disposed between the support substrate and the light emitting element, the underfill material comprising a rib portion disposed outside of an end face of the light emitting element to surround the end surface of the light emitting element.

18. 发明申请

US20120319161A1 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE WAFER 有权
标题翻译：制造半导体发光器件和半导体发光器件的方法
公开(公告)号：US20120319161A1
公开(公告)日：2012-12-20
申请号：US13405634
申请日：2012-02-27
申请人： Toru GOTODA , Toshiyuki Oka , Shinya Nunoue , Kotaro Zaima , Hiroshi Ono , Hajime Nago
发明人： Toru GOTODA , Toshiyuki Oka , Shinya Nunoue , Kotaro Zaima , Hiroshi Ono , Hajime Nago
IPC分类号： H01L33/02
CPC分类号： H01L33/007 , H01L21/2011 , H01L33/0079 , H01L33/20 , H01S5/0213 , H01S5/0217 , H01S5/32341
摘要： According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include forming a nitride semiconductor layer including a light emitting layer on a first substrate having an unevenness, bonding the nitride layer to a second substrate, and separating the first substrate from the nitride layer by irradiating the nitride layer with light. The forming the nitride layer includes leaving a cavity in a space inside a depression of the unevenness while forming a thin film on the depression. The film includes a same material as part of the nitride layer. The separating includes causing the film to absorb part of the light so that intensity of the light applied to a portion of the nitride layer facing the depression is made lower than intensity of the light applied to a portion facing a protrusion of the unevenness.
摘要翻译：根据一个实施例，公开了一种用于制造半导体发光器件的方法。该方法可以包括在具有不平坦度的第一衬底上形成包括发光层的氮化物半导体层，将氮化物层接合到第二衬底，并且通过用光照射氮化物层将第一衬底与氮化物层分离。形成氮化物层包括在凹凸的凹陷内的空间中留下空腔，同时在凹陷上形成薄膜。该膜包括与氮化物层的一部分相同的材料。分离包括使膜吸收部分光，使得施加到面向凹陷的氮化物层的一部分的光的强度低于施加到面对凹凸的突出部的部分的光的强度。

19. 发明申请

US20110220934A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光装置及制造半导体发光装置的方法
公开(公告)号：US20110220934A1
公开(公告)日：2011-09-15
申请号：US12874568
申请日：2010-09-02
申请人： Toru Gotoda , Hajime Nago , Toshiyuki Oka , Kotaro Zaima , Shinya Nunoue
发明人： Toru Gotoda , Hajime Nago , Toshiyuki Oka , Kotaro Zaima , Shinya Nunoue
IPC分类号： H01L33/30 , H01L33/48
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/44 , H01L33/60 , H01L2224/11 , H01L2933/0041 , H01L2933/005
摘要： A semiconductor light emitting device has a support substrate, a light emitting element, and underfill material. The light emitting element includes a nitride-based group III-V compound semiconductor layer contacted via a bump on the support substrate. The underfill material is disposed between the support substrate and the light emitting element, the underfill material comprising a rib portion disposed outside of an end face of the light emitting element to surround the end surface of the light emitting element.
摘要翻译：半导体发光器件具有支撑衬底，发光元件和底部填充材料。发光元件包括通过支撑衬底上的凸块接触的基于氮化物的III-V族化合物半导体层。底部填充材料设置在支撑基板和发光元件之间，底部填充材料包括布置在发光元件的端面外侧的肋部，以围绕发光元件的端面。

20. 发明授权

US08653498B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08653498B2
公开(公告)日：2014-02-18
申请号：US13032943
申请日：2011-02-23
申请人： Shigeya Kimura , Taisuke Sato , Toshihide Ito , Takahiro Sato , Toshiyuki Oka , Shinya Nunoue
发明人： Shigeya Kimura , Taisuke Sato , Toshihide Ito , Takahiro Sato , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/40 , H01L33/04
CPC分类号： H01L33/382 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structural body, a first electrode; and a second electrode. The stacked structural body includes a first semiconductor layer of n-type, a second semiconductor layer of p-type, and a light emitting portion provided therebetween. The first electrode includes a first contact electrode portion. The second electrode includes a second contact electrode portion and a p-side pad electrode. A sheet resistance of the second contact electrode portion is lower than a sheet resistance of the first semiconductor layer. The p-side pad electrode is provided farther inward than a circumscribed rectangle of the first contact electrode portion, and the first contact electrode portion is provided farther outward than a circumscribed rectangle of the p-side pad electrode.
摘要翻译：根据一个实施例，半导体发光器件包括：层叠结构体，第一电极; 和第二电极。层叠结构体包括n型的第一半导体层，p型的第二半导体层和设置在其间的发光部。第一电极包括第一接触电极部分。第二电极包括第二接触电极部分和p侧焊盘电极。第二接触电极部分的薄层电阻低于第一半导体层的薄层电阻。 p侧焊盘电极比第一接触电极部分的外接矩形更靠内侧设置，并且第一接触电极部分比p侧焊盘电极的外接矩形更远地设置。

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