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    • 11. 发明授权
    • Using bilayer lithography process to define neck height for PMR
    • 使用双层光刻工艺来定义PMR的颈部高度
    • US07394621B2
    • 2008-07-01
    • US10881444
    • 2004-06-30
    • Donghong LiYoshitaka Sasaki
    • Donghong LiYoshitaka Sasaki
    • G11B5/127
    • G11B5/3163G11B5/1278Y10T29/49021
    • A method for independently forming neck height (NH) and pole width dimensions in a main pole layer of a PMR write head is described. A main pole layer with a pole tip region is formed on a bottom yoke. The pole tip region is trimmed by an ion milling process to give a pole width. A bilayer resist is patterned to form an opening with an undercut on the main pole layer. The opening uncovers the pole tip region except for an NH length adjacent to the pole tip. A top yoke comprised of CoFeN with a thickness of about 0.2 microns is deposited in the opening and the bilayer resist is removed by a lift-off process. Thereafter, a write gap layer is formed on the pole tip region and then first, second, and third write shield layers are formed above the write gap layer along the ABS.
    • 描述了在PMR写头的主极层中独立地形成颈部高度(NH)和极宽度尺寸的方法。 具有极尖区域的主极层形成在底架上。 通过离子铣削工艺修剪极尖区域以产生极宽度。 图案化双层抗蚀剂以在主极层上形成具有底切的开口。 除了与极尖相邻的NH长度之外,开口露出磁极尖端区域。 由厚度约0.2微米的CoFeN组成的顶部磁轭沉积在开口中,并通过剥离过程去除双层抗蚀剂。 此后,在极尖区域上形成写间隙层,然后沿着ABS形成在写间隙层上方的第一,第二和第三写屏蔽层。
    • 16. 发明申请
    • METHOD AND SYSTEM FOR PROVIDING A PIEZOELECTRIC MULTILAYER
    • 提供压电多层的方法和系统
    • US20120216378A1
    • 2012-08-30
    • US13460190
    • 2012-04-30
    • Nathan C. EmleyDonghong LiPrakash Mani
    • Nathan C. EmleyDonghong LiPrakash Mani
    • H01L41/22
    • H01L41/27H01L41/083H01L41/273H01L41/277H01L41/293H01L41/297H01L41/314H01L41/332Y10T29/42Y10T29/49126Y10T29/49147Y10T29/49155Y10T29/49165
    • A method and system for fabricating a piezoelectric multilayer are described. The method and system include providing conductive layers. Alternating conductive layers are electrically connected. A first plurality of alternating conductive layers is electrically isolated from a second plurality of alternating conductive layers. Piezoelectric layers are interleaved with the conductive layers. Apertures are provided in the piezoelectric layers. A first conductive plug electrically connects the first plurality of alternating conductive layers, includes a first plurality of segments, and is in apertures in the piezoelectric layers. Each of the first plurality of segments extends through one of the piezoelectric layers. A second conductive plug electrically connects the second plurality of alternating conductive layers, includes a second plurality of segments, and is in a second portion of the plurality of apertures. Each of the second plurality of segments extends through one of the plurality of piezoelectric layers.
    • 描述了一种用于制造压电多层的方法和系统。 该方法和系统包括提供导电层。 交替导电层电连接。 第一多个交替导电层与第二多个交替导电层电隔离。 压电层与导电层交错。 在压电层中设置孔径。 第一导电插塞电连接第一多个交替导电层,包括第一多个段,并且在压电层中的孔中。 第一多个段中的每一个延伸穿过压电层中的一个。 第二导电插塞电连接第二多个交替导电层,包括第二多个段,并且在多个孔的第二部分中。 第二多个段中的每一个延伸穿过多个压电层中的一个。
    • 17. 发明授权
    • Method for providing a side shield for a magnetic recording transducer
    • 提供用于磁记录传感器的侧屏蔽的方法
    • US08419954B1
    • 2013-04-16
    • US13285267
    • 2011-10-31
    • Yan ChenDonghong LiLien-Chang Wang
    • Yan ChenDonghong LiLien-Chang Wang
    • B44C1/22
    • G11B5/1278G11B5/3116G11B5/315G11B5/3163Y10T29/49048
    • A method for fabricating a side shield for a magnetic transducer is described. The transducer has a nonmagnetic layer, a pole, a gap layer between the pole sidewalls and the nonmagnetic layer, and a hard mask having a hard mask aperture. A removal mask having a removal aperture exposing part of the pole and hard mask aperture is provided. The removal mask covers part of the hard mask aperture and the part of the hard mask. A trench in the nonmagnetic layer is formed by removing part of the nonmagnetic layer. A seed layer is deposited. A deposition mask having a deposition aperture therein is provided. The deposition aperture exposes part of the trench and part of the nonmagnetic layer. Side shield material(s) are deposited. Part of the side shield material(s) external to the deposition trench are removed. A remaining portion of the side shield material forms the side shield.
    • 描述了用于制造用于磁换能器的侧屏蔽的方法。 换能器具有非磁性层,极,极侧壁和非磁性层之间的间隙层,以及具有硬掩模孔的硬掩模。 提供具有暴露极和硬掩模孔的一部分的去除孔的去除掩模。 去除掩模覆盖硬掩模孔的一部分和硬掩模的一部分。 通过去除非磁性层的一部分来形成非磁性层中的沟槽。 种子层被沉积。 提供其中具有沉积孔的沉积掩模。 沉积孔暴露了沟槽的一部分和非磁性层的一部分。 侧屏蔽材料被沉积。 除去沉积沟槽外部的侧面屏蔽材料的一部分。 侧屏蔽材料的剩余部分形成侧屏蔽。