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11. 发明授权

US5618643A Embedded phase shifting mask with improved relative attenuated film transmission 失效
标题翻译：嵌入式相移掩模，具有改进的相对衰减薄膜传输
公开(公告)号：US5618643A
公开(公告)日：1997-04-08
申请号：US573526
申请日：1995-12-15
申请人： Giang T. Dao , Gang Liu
发明人： Giang T. Dao , Gang Liu
IPC分类号： G03F1/32 , G03F9/00
CPC分类号： G03F1/32
摘要： A method and apparatus for fabricating a mask for use in patterning a radiation sensitive layer in a lithographic printer. An embedded phase shifting layer is disposed over a substantially transparent base layer such that attenuated regions of the mask are phase shifted approximately 160 to 200 degrees relative to open features in the mask. In accordance with the present invention, radiation transmission is reduced through the open feature regions of the mask. In one embodiment, a thin radiation transmission reducing layer is deposited over the open feature regions of the mask. In another embodiment, the open feature regions of the mask are roughened to reduce radiation transmission. In yet another embodiment, ion implantation is performed in the open feature regions of the mask to reduce transmission. With the reduced transmission of radiation through the open feature regions of the present mask, high resolution lithography employing short wavelength radiation is realized.
摘要翻译：一种用于制造用于图案化平版印刷机中的辐射敏感层的掩模的方法和装置。嵌入式相移层设置在基本上透明的基底层上，使得掩模的衰减区域相对于掩模中的开放特征相移大约160至200度。根据本发明，辐射透射通过掩模的开放特征区域减小。在一个实施例中，薄的辐射透射降低层沉积在掩模的开放特征区域上。在另一个实施例中，掩模的开放特征区域被粗糙化以减少辐射透射。在另一个实施例中，在掩模的开放特征区域中执行离子注入以减少透射。随着辐射通过本掩模的开放特征区域的减小的透射，实现了采用短波长辐射的高分辨率光刻。

12. 发明授权

US5446521A Phase-shifted opaquing ring 失效
标题翻译：相移不透明环
公开(公告)号：US5446521A
公开(公告)日：1995-08-29
申请号：US319475
申请日：1994-10-07
申请人： Robert F. Hainsey , Giang T. Dao
发明人： Robert F. Hainsey , Giang T. Dao
IPC分类号： G03F1/00 , G03F1/26 , G03F1/34 , G03F7/20 , G03B27/28
CPC分类号： G03F7/70633 , G03F1/26 , G03F1/34 , G03F1/44 , G03F7/70283 , G03F7/70433
摘要： An attenuated phase-shifted reticle is disclosed. The reticle comprises a device region and a scribeline region. The scribeline region further comprises metrology cells, which contain features to be patterned for the purpose of measurement, etc. Other portions of the scribeline region comprise a sub-resolution pattern of, for example, lines and spaces 180.degree. out of phase. Since the pattern is sub-resolution, it will not print. Since the pattern comprises features 180.degree. out of phase, the intensity of radiation underneath the pattern is significantly reduced. Therefore, in a lithography method incorporating multiple exposures of the scribeline region, the metrology cells are not overexposed by the overlapping exposures in the stepping system.
摘要翻译：公开了一种衰减的相移掩模版。掩模版包括器件区域和划线区域。划线区域还包括测量单元，其包含要用于测量目的图案化的特征等。划线区域的其他部分包括例如180°异相的线和间隔的子分辨率图案。由于模式是子分辨率，因此不会打印。由于图案包含180°异相特征，图案下方的辐射强度显着降低。因此，在包含划线区域的多次曝光的光刻方法中，计量单元不会被步进系统中的重叠曝光过度曝光。

13. 发明授权

US5302477A Inverted phase-shifted reticle 失效
标题翻译：反相相位标线片
公开(公告)号：US5302477A
公开(公告)日：1994-04-12
申请号：US933400
申请日：1992-08-21
申请人： Giang T. Dao , Ruben A. Rodriguez , Harry H. Fujimoto
发明人： Giang T. Dao , Ruben A. Rodriguez , Harry H. Fujimoto
IPC分类号： G03F1/29 , G03F1/30 , G03F7/20 , G03F9/00
CPC分类号： G03F1/29 , G03F1/30 , G03F7/70283 , G03F7/70625 , G03F7/70641
摘要： A phase-shifted reticle with patterns proximate each other having inverted phases for the features and phase-shifting elements, and methods of fabricating the reticle, are disclosed. In a preferred embodiment, the inverted reticle is used to form an array of closely spaced contact or via openings. For a first pattern on the reticle, the feature will be the 0.degree. phase and the phase-shifting rim surrounding that feature will be the 180.degree. phase. All patterns surrounding the first pattern have phase-shifting rims of the 0.degree. phase and features of the 180.degree. phase. In this way, each pattern can form below conventional resolution features in the resist. Additionally, there will not be exposure of the regions between the closely spaced features since radiation transmitted through the closely spaced phase-shifting rims of the two patterns is 180.degree. out of phase.
摘要翻译：公开了一种具有彼此邻近的图案的相移掩模版，具有用于特征和相移元件的反相，以及制造掩模版的方法。在优选实施例中，反相的掩模版用于形成紧密间隔的接触或通孔的阵列。对于刻线上的第一个图案，该特征将为0度相位，并且该特征周围的相移边缘将为180度相位。围绕第一图案的所有图案都具有0度相位和180度相位特征的移相轮缘。以这种方式，每个图案可以在抗蚀剂中形成为低于常规分辨率特征。另外，在紧密间隔的特征之间不会发生区域的曝光，因为通过两个图案的紧密间隔的相移轨道的辐射是相位相差180度。

14. 发明授权

US06715495B2 Reduced particle contamination manufacturing and packaging for reticles 失效
标题翻译：减少颗粒污染制造和包装的掩模版
公开(公告)号：US06715495B2
公开(公告)日：2004-04-06
申请号：US09737125
申请日：2000-12-13
申请人： Giang T. Dao , Ronald J. Kuse
发明人： Giang T. Dao , Ronald J. Kuse
IPC分类号： B08B704
CPC分类号： H01L21/67359 , G03F1/62 , G03F1/66 , G03F7/70741 , G03F7/70916 , G03F7/70925 , G03F7/70983 , H01L21/67366 , H01L21/67393
摘要： A method of transporting a reticle is disclosed. The reticle is placed in a reticle carrier that has an ionizer. Moreover, the reticle may be attached with a pellicle. The pellicle consists of a pellicle frame and a pellicle film stretched over the pellicle frame. The pellicle frame has included within an absorbent material.
摘要翻译：公开了传送掩模版的方法。将掩模版放置在具有电离器的掩模版载体中。此外，掩模版可以附着防护薄膜组件。防护薄膜组件由防护薄膜组件框架和在防护薄膜框架上延伸的防护薄膜组成。防护薄膜框架包括在吸收材料内。

15. 发明授权

US5620816A Layout methodology, mask set, and patterning method for phase-shifting lithography 失效
公开(公告)号：US5620816A
公开(公告)日：1997-04-15
申请号：US543062
申请日：1995-10-13
申请人： Giang T. Dao
发明人： Giang T. Dao
IPC分类号： G03F1/34 , G03F7/20 , G03F9/00
CPC分类号： G03F1/34 , G03F7/2022 , G03F7/70283 , G03F7/70433 , G03F7/70466
摘要： A device layer layout methodology, and method and apparatus for patterning a photosensitive layer. Device features are placed on lines running in rows and/or columns during layout. The lines and/or columns are extracted from the database to produce a layout of the phase-edge phase shifting layer. The photosensitive layer may be exposed to a mask corresponding to this layout, to produce latent image of the rows and/or lines. The photosensitive layer is also exposed to the device layer layout to expose unwanted portions of the phase-edge layer. Methods of forming a variety of device features, including contact/via openings and contact/via plugs are disclosed.

16. 发明授权

US5595843A Layout methodology, mask set, and patterning method for phase-shifting lithography 失效
标题翻译：布局方法，掩模集和相移光刻的图案化方法
公开(公告)号：US5595843A
公开(公告)日：1997-01-21
申请号：US413405
申请日：1995-03-30
申请人： Giang T. Dao
发明人： Giang T. Dao
IPC分类号： G03F1/34 , G03F7/20 , G03F9/00
CPC分类号： G03F1/34 , G03F7/2022 , G03F7/70283 , G03F7/70433 , G03F7/70466
摘要： A device layer layout methodology, and method and apparatus for patterning a photosensitive layer. Device features are placed on lines running in rows and/or columns during layout. The lines and/or columns are extracted from the database to produce a layout of the phase-edge phase shifting layer. The photosensitive layer may be exposed to a mask corresponding to this layout, to produce latent image of the rows and/or lines. The photosensitive layer is also exposed to the device layer layout to expose unwanted portions of the phase-edge layer. Methods of forming a variety of device features, including contact/via openings and contact/via plugs are disclosed.
摘要翻译：一种器件层布局方法，以及用于图案化感光层的方法和装置。设备功能放置在布局期间以行和/或列运行的行。从数据库中提取行和/或列以产生相位相移层的布局。感光层可以暴露于对应于该布局的掩模，以产生行和/或线的潜像。感光层也暴露于器件层布局以暴露相边缘层的不需要的部分。公开了形成各种装置特征的方法，包括接触/通孔开口和接触/通孔塞。

17. 发明授权

US06279249B1 Reduced particle contamination manufacturing and packaging for reticles 有权
公开(公告)号：US06279249B1
公开(公告)日：2001-08-28
申请号：US09477795
申请日：1999-12-30
申请人： Giang T. Dao , Ronald J. Kuse
发明人： Giang T. Dao , Ronald J. Kuse
IPC分类号： F26B1900
CPC分类号： H01L21/67359 , G03F1/62 , G03F1/66 , G03F7/70741 , G03F7/70916 , G03F7/70925 , G03F7/70983 , H01L21/67366 , H01L21/67393
摘要： A method of transporting a reticle is disclosed. The reticle is placed in a reticle carrier that has an ionizer. Moreover, the reticle may be attached with a pellicle. The pellicle consists of a pellicle frame and a pellicle film stretched over the pellicle frame. The pellicle frame has included within an absorbent material.

18. 发明授权

US5688409A Processes for fabricating device layers with ultrafine features 失效
标题翻译：用于制造具有超细特征的器件层的工艺
公开(公告)号：US5688409A
公开(公告)日：1997-11-18
申请号：US667445
申请日：1996-06-21
申请人： Giang T. Dao , Joseph C. Langston
发明人： Giang T. Dao , Joseph C. Langston
IPC分类号： G03F1/26 , G03F1/30 , G03F1/34 , G03F7/20 , G03F7/00
CPC分类号： G03F1/34 , G03F1/26 , G03F1/30 , G03F7/70058 , G03F7/70283
摘要： A new process and an improved process for fabricating device layers with ultrafine features. In one embodiment a device layer to be patterned is deposited above a substrate and a photoresist layer is deposited above that device layer. A reticle having a first transparent layer and a second opaque layer is used to pattern the photoresist layer. The reticle includes a first region with a first phase and a second region with a second phase such that the incident radiation is shifted when passing through the reticle. The second reticle layer is disposed above the first reticle layer and proximate to the location where the first region transitions to the second region of the first reticle layer. A stepper is used to expose the photoresist to radiation through the reticle. The critical dimensions of the device layer being patterned are controlled by adjusting the partial coherence of the stepper during exposure.
摘要翻译：用于制造具有超细特征的器件层的新工艺和改进的工艺。在一个实施例中，待图案化的器件层沉积在衬底上方，并且光致抗蚀剂层沉积在器件层上方。使用具有第一透明层和第二不透明层的掩模版来图案化光致抗蚀剂层。掩模版包括具有第一相位的第一区域和具有第二相位的第二区域，使得当穿过掩模版时入射辐射偏移。第二掩模版层设置在第一掩模版层之上并且靠近第一区域转移到第一掩模版层的第二区域的位置。使用步进器将光致抗蚀剂暴露于通过掩模版的辐射。通过在曝光期间调整步进器的部分相干性来控制被图案化的器件层的临界尺寸。

19. 发明授权

US07368020B2 Reduced particle contamination manufacturing and packaging for reticles 有权
标题翻译：减少颗粒污染制造和包装的掩模版
公开(公告)号：US07368020B2
公开(公告)日：2008-05-06
申请号：US10818311
申请日：2004-04-05
申请人： Giang T. Dao , Ronald J. Kuse
发明人： Giang T. Dao , Ronald J. Kuse
IPC分类号： B08B7/04
CPC分类号： H01L21/67359 , G03F1/62 , G03F1/66 , G03F7/70741 , G03F7/70916 , G03F7/70925 , G03F7/70983 , H01L21/67366 , H01L21/67393
摘要： A method of transporting a reticle is disclosed. The reticle is placed in a reticle carrier that has an ionizer. Moreover, the reticle may be attached with a pellicle. The pellicle consists of a pellicle frame and a pellicle film stretched over the pellicle frame. The pellicle frame has included within an absorbent material.
摘要翻译：公开了传送掩模版的方法。将掩模版放置在具有电离器的掩模版载体中。此外，掩模版可以附着防护薄膜组件。防护薄膜组件由防护薄膜组件框架和在防护薄膜框架上延伸的防护薄膜组成。防护薄膜框架包括在吸收材料内。

20. 发明授权

US06569582B2 Hinged pellicles and methods of use 失效
公开(公告)号：US06569582B2
公开(公告)日：2003-05-27
申请号：US09840373
申请日：2001-04-23
申请人： Jerry C. Cullins , Giang T. Dao
发明人： Jerry C. Cullins , Giang T. Dao
IPC分类号： G03F900
CPC分类号： G03F1/64
摘要： Apparatus and methods to protect a photomask that is used for semiconductor photolithography at wavelengths outside the visible spectrum include a hinged pellicle that is rotated away from the photomask during exposure. The pellicle can be transparent or opaque. In one embodiment, the photomask is supported by a photomask base, and the pellicle is hinged to one side of the photomask base. The pellicle can be moved away from the photomask by a robot arm. When covering the photomask base, the pellicle can be secured to it with a securing mechanism such as a vacuum arrangement. Methods of use are also described.

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