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11. 发明授权

US08782495B2 Non-volatile memory and methods with asymmetric soft read points around hard read points 有权
标题翻译：非易失性存储器和在硬读取点周围具有不对称软读取点的方法
公开(公告)号：US08782495B2
公开(公告)日：2014-07-15
申请号：US12978348
申请日：2010-12-23
申请人： Idan Alrod , Eran Sharon , Toru Miwa , Gerrit Jan Hemink , Yee Lih Koh
发明人： Idan Alrod , Eran Sharon , Toru Miwa , Gerrit Jan Hemink , Yee Lih Koh
IPC分类号： G11C29/00
CPC分类号： G11C11/5642 , G06F11/1072 , G11C16/26 , G11C29/00
摘要： A non-volatile memory has its cells' thresholds programmed within any one of a first set of voltage bands partitioned by a first set of reference thresholds across a threshold window. The cells are read at a higher resolution relative to a second set of reference thresholds so as to provide additional soft bits for error correction. The reference thresholds of the second set are set up to be non-uniformly distributed on the threshold window so as to provide higher resolution at designated regions. At the same time they are conducive to be read in groups for soft bits to be read bit-by-bit systematically with a simple algorithm and read circuit and using a minimum of data latches. This is accomplished by relaxing the requirement that the first set of reference threshold is a subset of the second set and that the resulting soft bits are symmetrically distributed about the hard bits.
摘要翻译：非易失性存储器的单元的阈值被编程在跨越阈值窗口的第一组参考阈值划分的第一组电压带的任一个中。相对于第二组参考阈值以更高的分辨率读取单元，以便提供用于纠错的附加软比特。第二组的参考阈值被设置为在阈值窗口上不均匀地分布，以便在指定区域提供更高的分辨率。同时，它们有助于读取组中的软位，通过简单的算法和读取电路并使用最少的数据锁存器逐位读取。这是通过放宽第一组参考阈值是第二组的子集并且所得到的软比特关于硬比特对称分布的要求来实现的。

12. 发明申请

US20080025099A1 Non-Volatile Memory And Control With Improved Partial Page Program Capability 有权
标题翻译：非易失性存储器和具有改进的部分页面程序能力的控制
公开(公告)号：US20080025099A1
公开(公告)日：2008-01-31
申请号：US11867598
申请日：2007-10-04
申请人： Yan Li , Yupin Fong , Toru Miwa
发明人： Yan Li , Yupin Fong , Toru Miwa
IPC分类号： G11C16/04 , G11C16/06
CPC分类号： G11C16/10 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C2211/5646
摘要： In a non-volatile memory programming scheme where the memory cells are programmed in two or more sequential programming passes, when there is insufficient host data to program at least some of the memory cells during the second pass, some of the memory cells may be programmed to the wrong threshold voltage. This can be prevented by modifying the programming scheme so that this does not occur. In one implementation, this is accomplished by choosing a code scheme, which does not cause the memory cells to be programmed to the wrong threshold voltage during the second programming pass, or by programming the memory cells in accordance with substitute data that would not cause the cells to be programmed to an erroneous state.
摘要翻译：在非易失性存储器编程方案中，其中存储器单元被编程在两个或多个顺序编程遍中，当在第二遍期间存在不足的主机数据来编程至少一些存储器单元时，一些存储器单元可被编程到错误的阈值电压。这可以通过修改编程方案来避免这样的情况。在一个实现中，这是通过选择代码方案来实现的，该代码方案不会在第二编程遍期间将存储器单元编程到错误的阈值电压，或者通过根据不会导致单元被编程为错误状态。

13. 发明申请

US20060203561A1 Non-Volatile Memory and Control with Improved Partial Page Program Capability 有权
标题翻译：非易失性存储器和具有改进的部分页面程序能力的控制
公开(公告)号：US20060203561A1
公开(公告)日：2006-09-14
申请号：US11381972
申请日：2006-05-05
申请人： Yan Li , Yupin Fong , Toru Miwa
发明人： Yan Li , Yupin Fong , Toru Miwa
IPC分类号： G11C16/04
CPC分类号： G11C16/10 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C2211/5646
摘要： In a non-volatile memory programming scheme where the memory cells are programmed in two or more sequential programming passes, when there is insufficient host data to program at least some of the memory cells during the second pass, some of the memory cells may be programmed to the wrong threshold voltage. This can be prevented by modifying the programming scheme so that this does not occur. In one implementation, this is accomplished by choosing a code scheme, which does not cause the memory cells to be programmed to the wrong threshold voltage during the second programming pass, or by programming the memory cells in accordance with substitute data that would not cause the cells to be programmed to an erroneous state.
摘要翻译：在非易失性存储器编程方案中，其中存储器单元被编程在两个或多个顺序编程遍中，当在第二遍期间存在不足的主机数据来编程至少一些存储器单元时，一些存储器单元可被编程到错误的阈值电压。这可以通过修改编程方案来避免这样的情况。在一个实现中，这是通过选择代码方案来实现的，该代码方案不会在第二编程遍期间将存储器单元编程到错误的阈值电压，或者通过根据不会导致单元被编程为错误状态。

14. 发明申请

US20050237814A1 NON-VOLATILE MEMORY AND CONTROL WITH IMPROVED PARTIAL PAGE PROGRAM CAPABILITY 有权
标题翻译：非易失性存储器和具有改进的部分页面程序能力的控制
公开(公告)号：US20050237814A1
公开(公告)日：2005-10-27
申请号：US10830824
申请日：2004-04-23
申请人： Yan Li , Yupin Fong , Toru Miwa
发明人： Yan Li , Yupin Fong , Toru Miwa
IPC分类号： G11C11/56 , G11C16/04 , G11C16/10 , G11C11/34
CPC分类号： G11C16/10 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C2211/5646
摘要： In a non-volatile memory programming scheme where the memory cells are programmed in two or more sequential programming passes, when there is insufficient host data to program at least some of the memory cells during the second pass, some of the memory cells may be programmed to the wrong threshold voltage. This can be prevented by modifying the programming scheme so that this does not occur. In one implementation, this is accomplished by choosing a code scheme, which does not cause the memory cells to be programmed to the wrong threshold voltage during the second programming pass, or by programming the memory cells in accordance with substitute data that would not cause the cells to be programmed to an erroneous state.
摘要翻译：在非易失性存储器编程方案中，其中存储器单元被编程在两个或多个顺序编程遍中，当在第二遍期间存在不足的主机数据来编程至少一些存储器单元时，一些存储器单元可被编程到错误的阈值电压。这可以通过修改编程方案来避免这样的情况。在一个实现中，这是通过选择代码方案来实现的，该代码方案不会在第二编程遍期间将存储器单元编程到错误的阈值电压，或者通过根据不会导致单元被编程为错误状态。

15. 发明申请

US20080137432A1 Program Time Adjustment as Function of Program Voltage For Improved Programming Speed in Memory System 有权
标题翻译：程序时间调整作为程序电压的功能，用于提高存储系统中的编程速度
公开(公告)号：US20080137432A1
公开(公告)日：2008-06-12
申请号：US12019422
申请日：2008-01-24
申请人： Shih-Chung Lee , Toru Miwa
发明人： Shih-Chung Lee , Toru Miwa
IPC分类号： G11C16/06
CPC分类号： G11C5/145 , G11C16/04 , G11C16/12 , G11C29/02 , G11C29/021 , G11C29/023 , G11C29/028
摘要： In a non-volatile memory system, the programming time period allocated for the program pulse is adjusted as a function of the voltage level of the pump pulse required so that the total number of pump pulses required to program the charge storage element to the required threshold voltage is reduced. For example, programming time period may be increased with an increase in the voltage level of the pump pulse required. This allows the programming time period of the program pulse to be increased to a value that compensates for the increased charge-up time that is required for the higher amplitude program pulses to reach the desired programming voltage.
摘要翻译：在非易失性存储器系统中，分配给编程脉冲的编程时间段被调整为所需泵脉冲的电压电平的函数，使得将电荷存储元件编程到所需阈值所需的泵浦脉冲的总数电压降低。例如，编程时间可以随着所需泵脉冲的电压电平的增加而增加。这允许将编程脉冲的编程时间段增加到补偿更高幅度编程脉冲达到所需编程电压所需的增加的充电时间的值。

16. 发明授权

US07330373B2 Program time adjustment as function of program voltage for improved programming speed in memory system 有权
标题翻译：程序时间调整作为程序电压的功能，以提高存储系统中的编程速度
公开(公告)号：US07330373B2
公开(公告)日：2008-02-12
申请号：US11391811
申请日：2006-03-28
申请人： Shih-Chung Lee , Toru Miwa
发明人： Shih-Chung Lee , Toru Miwa
IPC分类号： G11C16/12
CPC分类号： G11C5/145 , G11C16/04 , G11C16/12 , G11C29/02 , G11C29/021 , G11C29/023 , G11C29/028
摘要： In a non-volatile memory system, the programming time period allocated for the program pulse is adjusted as a function of the voltage level of the pump pulse required so that the total number of pump pulses required to program the charge storage element to the required threshold voltage is reduced. For example, programming time period may be increased with an increase in the voltage level of the pump pulse required. This allows the programming time period of the program pulse to be increased to a value that compensates for the increased charge-up time that is required for the higher amplitude program pulses to reach the desired programming voltage.
摘要翻译：在非易失性存储器系统中，分配给编程脉冲的编程时间段被调整为所需泵脉冲的电压电平的函数，使得将电荷存储元件编程到所需阈值所需的泵浦脉冲的总数电压降低。例如，编程时间可以随着所需泵脉冲的电压电平的增加而增加。这允许将编程脉冲的编程时间段增加到补偿更高幅度编程脉冲达到所需编程电压所需的增加的充电时间的值。

17. 发明授权

US07327608B2 Program time adjustment as function of program voltage for improved programming speed in programming method 有权
标题翻译：程序时间调整作为编程电压的功能，可以提高编程方式的编程速度
公开(公告)号：US07327608B2
公开(公告)日：2008-02-05
申请号：US11392265
申请日：2006-03-28
申请人： Shih-Chung Lee , Toru Miwa
发明人： Shih-Chung Lee , Toru Miwa
IPC分类号： G11C16/12
CPC分类号： G11C16/3454 , G11C16/12 , G11C16/32
摘要： In a non-volatile memory system, the programming time period allocated for the program pulse is adjusted as a function of the voltage level of the pump pulse required so that the total number of pump pulses required to program the charge storage element to the required threshold voltage is reduced. For example, programming time period may be increased with an increase in the voltage level of the pump pulse required. This allows the programming time period of the program pulse to be increased to a value that compensates for the increased charge-up time that is required for the higher amplitude program pulses to reach the desired programming voltage.
摘要翻译：在非易失性存储器系统中，分配给编程脉冲的编程时间段被调整为所需泵脉冲的电压电平的函数，使得将电荷存储元件编程到所需阈值所需的泵浦脉冲的总数电压降低。例如，编程时间可以随着所需泵脉冲的电压电平的增加而增加。这允许将编程脉冲的编程时间段增加到补偿更高幅度编程脉冲达到所需编程电压所需的增加的充电时间的值。

18. 发明授权

US07675780B2 Program time adjustment as function of program voltage for improved programming speed in memory system 有权
标题翻译：程序时间调整作为程序电压的功能，以提高存储系统中的编程速度
公开(公告)号：US07675780B2
公开(公告)日：2010-03-09
申请号：US12019422
申请日：2008-01-24
申请人： Shih-Chung Lee , Toru Miwa
发明人： Shih-Chung Lee , Toru Miwa
IPC分类号： G11C16/12
CPC分类号： G11C5/145 , G11C16/04 , G11C16/12 , G11C29/02 , G11C29/021 , G11C29/023 , G11C29/028
摘要： In a non-volatile memory system, the programming time period allocated for the program pulse is adjusted as a function of the voltage level of the pump pulse required so that the total number of pump pulses required to program the charge storage element to the required threshold voltage is reduced. For example, programming time period may be increased with an increase in the voltage level of the pump pulse required. This allows the programming time period of the program pulse to be increased to a value that compensates for the increased charge-up time that is required for the higher amplitude program pulses to reach the desired programming voltage.
摘要翻译：在非易失性存储器系统中，分配给编程脉冲的编程时间段被调整为所需泵脉冲的电压电平的函数，使得将电荷存储元件编程到所需阈值所需的泵浦脉冲的总数电压降低。例如，编程时间可以随着所需泵脉冲的电压电平的增加而增加。这允许将编程脉冲的编程时间段增加到补偿更高幅度编程脉冲达到所需编程电压所需的增加的充电时间的值。

19. 发明申请

US20070237008A1 Program time adjustment as function of program voltage for improved programming speed in memory system 有权
标题翻译：程序时间调整作为程序电压的功能，以提高存储系统中的编程速度
公开(公告)号：US20070237008A1
公开(公告)日：2007-10-11
申请号：US11391811
申请日：2006-03-28
申请人： Shih-Chung Lee , Toru Miwa
发明人： Shih-Chung Lee , Toru Miwa
IPC分类号： G11C5/14
CPC分类号： G11C5/145 , G11C16/04 , G11C16/12 , G11C29/02 , G11C29/021 , G11C29/023 , G11C29/028
摘要： In a non-volatile memory system, the programming time period allocated for the program pulse is adjusted as a function of the voltage level of the pump pulse required so that the total number of pump pulses required to program the charge storage element to the required threshold voltage is reduced. For example, programming time period may be increased with an increase in the voltage level of the pump pulse required. This allows the programming time period of the program pulse to be increased to a value that compensates for the increased charge-up time that is required for the higher amplitude program pulses to reach the desired programming voltage.
摘要翻译：在非易失性存储器系统中，分配给编程脉冲的编程时间段被调整为所需泵脉冲的电压电平的函数，使得将电荷存储元件编程到所需阈值所需的泵浦脉冲的总数电压降低。例如，编程时间可以随着所需泵脉冲的电压电平的增加而增加。这允许将编程脉冲的编程时间段增加到补偿更高幅度编程脉冲达到所需编程电压所需的增加的充电时间的值。

20. 发明申请

US20070236991A1 Program time adjustment as function of program voltage for improved programming speed in programming method 有权
标题翻译：程序时间调整作为编程电压的功能，可以提高编程方式的编程速度
公开(公告)号：US20070236991A1
公开(公告)日：2007-10-11
申请号：US11392265
申请日：2006-03-28
申请人： Shih-Chung Lee , Toru Miwa
发明人： Shih-Chung Lee , Toru Miwa
IPC分类号： G11C16/04
CPC分类号： G11C16/3454 , G11C16/12 , G11C16/32
摘要： In a non-volatile memory system, the programming time period allocated for the program pulse is adjusted as a function of the voltage level of the pump pulse required so that the total number of pump pulses required to program the charge storage element to the required threshold voltage is reduced. For example, programming time period may be increased with an increase in the voltage level of the pump pulse required. This allows the programming time period of the program pulse to be increased to a value that compensates for the increased charge-up time that is required for the higher amplitude program pulses to reach the desired programming voltage.
摘要翻译：在非易失性存储器系统中，分配给编程脉冲的编程时间段被调整为所需泵脉冲的电压电平的函数，使得将电荷存储元件编程到所需阈值所需的泵浦脉冲的总数电压降低。例如，编程时间可以随着所需泵脉冲的电压电平的增加而增加。这允许将编程脉冲的编程时间段增加到补偿更高幅度编程脉冲达到所需编程电压所需的增加的充电时间的值。

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