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11. 发明申请

US20050255700A1 Controlled multi-step magnetron sputtering process 审中-公开
标题翻译：受控多级磁控溅射工艺
公开(公告)号：US20050255700A1
公开(公告)日：2005-11-17
申请号：US11166836
申请日：2005-06-24
申请人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok Sinha
发明人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok Sinha
IPC分类号： C23C14/34 , C23C14/04 , C23C14/16 , C23C14/32 , C23C14/35 , H01J37/34 , H01L21/203 , H01L21/285 , H01L21/288 , H01L21/768
CPC分类号： H01L21/76844 , C23C14/046 , C23C14/165 , C23C14/185 , C23C14/225 , C23C14/35 , H01J37/3405 , H01J37/342 , H01J37/3423 , H01J37/3452 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76805 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： A multi-step sputtering process in plasma sputter reactor having target and magnetron operable in two modes, for example, in a substrate sputter etch and a substrate sputter deposition. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.
摘要翻译：在等离子体溅射反应器中的多步骤溅射工艺，其具有可在两种模式中操作的靶和磁控管，例如在衬底溅射蚀刻和衬底溅射沉积中。目标具有面向待溅射涂覆的晶片的环形保险库。位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。与本发明的反应器或其它反应器的集成铜通孔填充方法包括铜的高度电离溅射沉积的第一步骤，其可任选地用于去除通孔底部的阻挡层，更中立的，更低的铜的完全溅射沉积以完成种子层，以及将铜电镀到孔中以完成金属化的第三步骤。前两个步骤也可以与阻隔金属一起使用。

12. 发明授权

US06913680B1 Method of application of electrical biasing to enhance metal deposition 有权
标题翻译：施加电偏压以增强金属沉积的方法
公开(公告)号：US06913680B1
公开(公告)日：2005-07-05
申请号：US09614407
申请日：2000-07-12
申请人： Bo Zheng , Hougong Wang , Girish Dixit , Fusen Chen
发明人： Bo Zheng , Hougong Wang , Girish Dixit , Fusen Chen
IPC分类号： C25D5/18 , C25D7/12 , C25D13/22 , C25D21/12 , H01L21/288 , H01L21/302 , H01L21/3065 , H01L21/768
CPC分类号： H01L21/76877 , C25D5/18 , C25D7/123 , C25D17/001 , C25D21/12 , H01L21/2885
摘要： A method and associated apparatus includes depositing metal on a plating surface of an object immersed in an electrolyte solution prior to bulk deposition on the plating surface. In one aspect, the method further includes applying a voltage between an anode and the plating surface to enhance the concentration of metal ions in the electrolyte solution that is contained in a feature on the plating surface prior to the bulk deposition on the plating surface.
摘要翻译：一种方法和相关设备包括在沉积在电镀表面上之前，在浸在电解质溶液中的物体的电镀表面上沉积金属。一方面，该方法还包括在阳极和电镀表面之间施加电压，以增强在电镀表面上的主体沉积之前在电镀表面上的特征中包含的电解质溶液中的金属离子的浓度。

13. 发明授权

US5319245A Local interconnect for integrated circuits 失效
标题翻译：集成电路的局部互连
公开(公告)号：US5319245A
公开(公告)日：1994-06-07
申请号：US981908
申请日：1992-11-23
申请人： Fusen Chen , Fu-Tai Liou , Girish Dixit
发明人： Fusen Chen , Fu-Tai Liou , Girish Dixit
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/532 , H01L23/48 , H01L29/46 , H01L29/62 , H01L29/64
CPC分类号： H01L23/53257 , H01L21/76889 , H01L2924/0002 , Y10S148/019 , Y10S257/915
摘要： A method for fabrication of local interconnects in an integrated circuit, and an integrated circuit formed according to the same, is disclosed. According to the disclosed embodiment, a first and a second conductive structure are formed over the integrated circuit. An insulating layer is formed over the integrated. A first photoresist layer is formed over the insulating layer, patterned and developed. The insulating layer is etched to expose selected regions of the first and second conductive structures. A refractory metal layer is formed over the integrated circuit. A barrier layer is formed over the refractory metal layer, and optionally a refractory metal silicide layer is formed over the barrier layer. A second photoresist layer is formed over the barrier layer, patterned and developed. The refractory metal layer and barrier layer, and the refractory metal silicide layer if formed, are etched to define a conductive interconnect between the exposed selected regions of the first and second conductive structures.
摘要翻译：公开了一种用于制造集成电路中的局部互连的方法，以及根据该集成电路形成的集成电路。根据所公开的实施例，在集成电路上形成第一和第二导电结构。在整合上形成绝缘层。第一光致抗蚀剂层形成在绝缘层上，被图案化和显影。蚀刻绝缘层以暴露第一和第二导电结构的选定区域。在集成电路上形成难熔金属层。在耐火金属层之上形成阻挡层，并且可选地在阻挡层上形成难熔金属硅化物层。第二光致抗蚀剂层形成在阻挡层上，被图案化和显影。难熔金属层和阻挡层以及如果形成的难熔金属硅化物层被蚀刻以在第一和第二导电结构的暴露的选定区域之间限定导电互连。

14. 发明授权

US06797620B2 Method and apparatus for improved electroplating fill of an aperture 失效
标题翻译：用于改善孔的电镀填充物的方法和装置
公开(公告)号：US06797620B2
公开(公告)日：2004-09-28
申请号：US10124095
申请日：2002-04-16
申请人： John S. Lewis , Srinivas Gandikota , Sivakami Ramanathan , Girish Dixit , Robin Cheung , Fusen Chen
发明人： John S. Lewis , Srinivas Gandikota , Sivakami Ramanathan , Girish Dixit , Robin Cheung , Fusen Chen
IPC分类号： H01L2144
CPC分类号： H01L21/2855 , H01L21/76879
摘要： A method and apparatus is provided for filling apertures formed in a substrate surface by depositing materials that selectively inhibit or limit the formation or growth of subsequent layers used to fill an aperture. In one aspect, a method is provided for processing a substrate including providing a substrate having a field and apertures formed therein, wherein the apertures each have a bottom and sidewalls, depositing a seed layer on the bottom and sidewalls of the apertures, depositing a growth-inhibiting layer on at least one of the field of the substrate or an upper portion of the sidewalls of the apertures, and depositing a conductive layer on the growth-inhibiting layer and the seed layer. Deposition of the growth-inhibiting layer improves fill of the aperture from the bottom of the aperture up to the field of the substrate.
摘要翻译：提供了一种方法和装置，用于通过沉积选择性地抑制或限制用于填充孔的后续层的形成或生长的材料来填充形成在衬底表面中的孔。在一个方面，提供了一种用于处理衬底的方法，包括提供具有形成在其中的场和孔的衬底，其中每个孔具有底部和侧壁，在孔的底部和侧壁上沉积种子层，沉积生长在衬底的场中的至少一个或孔的侧壁的上部中的至少一个上的抑制层，并且在生长抑制层和种子层上沉积导电层。生长抑制层的沉积改善了孔的填充，从孔的底部到基底的场。

15. 发明授权

US06610189B2 Method and associated apparatus to mechanically enhance the deposition of a metal film within a feature 失效
公开(公告)号：US06610189B2
公开(公告)日：2003-08-26
申请号：US09754499
申请日：2001-01-03
申请人： Hougong Wang , Bo Zheng , Girish Dixit , Fusen Chen
发明人： Hougong Wang , Bo Zheng , Girish Dixit , Fusen Chen
IPC分类号： C25D500
CPC分类号： C25D21/10 , C25D5/003 , C25D5/08 , C25D5/20 , C25D7/123 , C25D17/001
摘要： A method and associated apparatus of electroplating an object and filling small features. The method comprises immersing the plating surface into an electrolyte solution and mechanically enhancing the concentration of metal ions in the electrolyte solution in the features. In one embodiment, the mechanical enhancement comprises mechanically vibrating the plating surface. In another embodiment, the mechanical enhancement comprises mechanically vibrating the electrolyte solution. In a further embodiment, the mechanical enhancement comprises increasing the pressure applied to the electrolyte solution.

16. 发明授权

US06485618B2 Integrated copper fill process 有权
标题翻译：综合铜填充工艺
公开(公告)号：US06485618B2
公开(公告)日：2002-11-26
申请号：US09917985
申请日：2001-07-30
申请人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Sankaram Athreya , Wei D. Wang , Ashok K. Sinha
发明人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Sankaram Athreya , Wei D. Wang , Ashok K. Sinha
IPC分类号： C23C1434
CPC分类号： H01L21/76844 , C23C14/35 , H01J37/3405 , H01J37/342 , H01J37/3423 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76805 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process includes a first step of highly ionized sputter deposition of copper, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and electroplating copper into the hole to complete the metallization.
摘要翻译：用于等离子体溅射反应器的靶和磁控管。目标具有面向待溅射涂覆的晶片的环形保险库。位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。集成的铜通孔填充工艺包括铜的高度电离溅射沉积的第一步骤，更中性的，更低能量的溅射沉积铜以完成种子层的第二步骤，以及将铜电镀到孔中以完成金属化。

17. 发明申请

US20120100188A1 SOLID STATE FORMS OF PALIPERIDONE SALTS AND PROCESS FOR THE PREPARATION THEREOF 审中-公开
标题翻译： PALIPERIDONE SALTS的固体状态及其制备方法
公开(公告)号：US20120100188A1
公开(公告)日：2012-04-26
申请号：US13318664
申请日：2010-05-25
申请人： Girish Dixit , Anil Shahaji Khile , Vignesh Nair , Nitin Sharadechandra Pradhan
发明人： Girish Dixit , Anil Shahaji Khile , Vignesh Nair , Nitin Sharadechandra Pradhan
IPC分类号： A61K31/519 , A61K9/14 , C07D471/04
CPC分类号： C07D471/04
摘要： Provided herein are solid state forms of paliperidone salts, processes for preparation, pharmaceutical compositions, and method of treating thereof. Paliperidone is represented by the following structural formula (I): More particularly, provided are solid state forms of paliperidone acid addition salts, wherein the acid counter ion is provided by an acid selected from the group consisting of L-(+)-tartaric acid, p-toluenesulfonic acid, maleic acid, oxalic acid, fumaric acid, acetic acid and malic acid. Provided also herein is a process for preparing substantially pure paliperidone free base using the solid state forms of paliperidone salts.
摘要翻译：本文提供的是利培酮盐的固态形式，制备方法，药物组合物及其处理方法。哌啶酮由以下结构式（I）表示：更具体地说，提供了帕培酮酸加成盐的固态形式，其中酸抗衡离子由选自下列的酸提供：L-（+） - 酒石酸，对甲苯磺酸，马来酸，草酸，富马酸，乙酸和苹果酸。本文还提供了使用固体形式的利培培酮盐制备基本上纯的利培酮游离碱的方法。

18. 发明申请

US20110142883A1 Amorphous Coprecipitates of Atorvastatin Pharmaceutically Acceptable Salts 审中-公开
标题翻译：阿托伐他汀药物可接受盐的无定形共沉淀物
公开(公告)号：US20110142883A1
公开(公告)日：2011-06-16
申请号：US12669543
申请日：2008-07-21
申请人： Girish Dixit , Anil Shahaji Khile , Nitin Sharadchandra Pradhan , Jon Valgeirsson
发明人： Girish Dixit , Anil Shahaji Khile , Nitin Sharadchandra Pradhan , Jon Valgeirsson
IPC分类号： A61K31/40 , A61K9/14 , A61P9/00 , A61P9/10
CPC分类号： C07D207/416 , A61K9/146 , A61K9/1635 , A61K31/40
摘要： The present invention relates to stable amorphous co-precipitates of atorvastatin pharmaceutically acceptable salts with pharmaceutically acceptable excipients, method for the preparation, pharmaceutical compositions, and method of treating thereof. Advantageously, the amorphous co-precipitates of atorvastatin pharmaceutically acceptable salts of the present invention have improved physiochemical characteristics that assist in the effective bioavailability
摘要翻译：本发明涉及阿托伐他汀药学上可接受的盐与药学上可接受的赋形剂的稳定无定形共沉淀物，制备方法，药物组合物及其治疗方法。有利地，本发明的阿托伐他汀药物可接受的盐的无定形共沉淀物具有改善的生理化学特征，其有助于有效的生物利用度

19. 发明申请

US20100278878A1 QUETIAPINE SALTS AND THEIR POLYMORPHS 失效
标题翻译： QUETIAPINE SALTS及其POLYMORPHS
公开(公告)号：US20100278878A1
公开(公告)日：2010-11-04
申请号：US12599085
申请日：2008-05-07
申请人： Girish Dixit , Anil Shahaji Khile , Jayesh Laljibhai Patel , Nitin Sharadchandra Pradhan , Jon Valgeirsson
发明人： Girish Dixit , Anil Shahaji Khile , Jayesh Laljibhai Patel , Nitin Sharadchandra Pradhan , Jon Valgeirsson
IPC分类号： A61K31/554 , C07D417/04 , A61K9/14 , A61P25/00
CPC分类号： C07D281/14
摘要： The present invention relates to novel and stable salt forms of quetiapine, processes for preparation, pharmaceutical compositions, and method of treating thereof. More particularly, the present invention provides novel acid addition salts of quetiapine wherein the acid counter ion is provided by an acid selected from the group consisting of benzene sulfonic acid, dibenzoyl-L-(+)-tartaric acid and di-p-toluoyl-L-(+)-tartaric acid. The present invention also provides novel polymorphic forms of quetiapine salts selected from the group consisting of quetiapine hydrobromide, quetiapine sulfate, quetiapine nitrate and quetiapine citrate.
摘要翻译：本发明涉及喹硫平的新颖稳定的盐形式，制备方法，药物组合物及其处理方法。更具体地说，本发明提供了喹硫平的新型酸加成盐，其中酸抗衡离子由选自苯磺酸，二苯甲酰基-L-（+） - 酒石酸和二对甲苯酰基 - L - （+） - 酒石酸。本发明还提供了选自喹硫平氢溴酸盐，硫酸喹硫平，硝酸喹硫平和柠檬酸喹硫平的新型多晶型盐酸喹硫平盐。

20. 发明申请

US20080109104A1 System, method, and medium for an endpoint detection scheme for copper low-dielectric damascene structures for improved dielectric and copper loss 有权
标题翻译：用于铜低介电镶嵌结构的端点检测方案的系统，方法和介质，用于改善电介质和铜损耗
公开(公告)号：US20080109104A1
公开(公告)日：2008-05-08
申请号：US12004730
申请日：2007-12-21
申请人： Ajoy Zutshi , Rahul Surana , Girish Dixit
发明人： Ajoy Zutshi , Rahul Surana , Girish Dixit
IPC分类号： G06F19/00 , G06F3/048 , G06F12/00 , G06F17/30
CPC分类号： B24B37/013 , B24B49/12 , G01N21/55 , H01L22/26
摘要： A system, method and medium of detecting a transition interface between a first dielectric material and an adjacent second dielectric material in a semiconductor wafer during a chemical-mechanical polishing process includes impinging an incident light of a predetermined wavelength on the semiconductor wafer at a first time, detecting at least one first intensity of at least one first reflected light, impinging the incident light of the predetermined wavelength on the semiconductor wafer at a second time, detecting at least one second intensity of at least one second reflected light, and determining a difference between the at least one first intensity and the at least one second intensity. If the difference between the at least one first intensity and the at least one second intensity is above a predetermined threshold, the chemical-mechanical polishing process is terminated.
摘要翻译：在化学机械抛光工艺期间检测半导体晶片中的第一介电材料和相邻的第二介电材料之间的过渡界面的系统，方法和介质包括在第一时间在半导体晶片上入射预定波长的入射光检测至少一个第一强度的至少一个第一反射光，在第二时间将预定波长的入射光照射在半导体晶片上，检测至少一个第二强度的至少一个第二反射光，并确定差异在所述至少一个第一强度和所述至少一个第二强度之间。如果所述至少一个第一强度和所述至少一个第二强度之间的差异高于预定阈值，则终止所述化学机械抛光处理。

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