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11. 发明授权

US08206853B2 Non-aqueous electrolyte secondary battery and non-aqueous electrolyte 有权
标题翻译：非水电解质二次电池和非水电解质
公开(公告)号：US08206853B2
公开(公告)日：2012-06-26
申请号：US11917374
申请日：2006-06-23
申请人： Keiji Saisho , Hidekazu Yamamoto , Masahiro Takehara
发明人： Keiji Saisho , Hidekazu Yamamoto , Masahiro Takehara
IPC分类号： H01M6/18
CPC分类号： H01M10/0525 , H01M4/13 , H01M10/0566 , H01M10/0567
摘要： The objective of the present invention is to prevent deterioration and expanding of anode active material and to improve charge-discharge cycle characteristics in a non-aqueous electrolyte secondary battery comprising an anode of which current collector has thereon a thin layer of an anode active material containing a metal. To solve this problem, in a non-aqueous electrolyte secondary battery wherein a thin layer of anode active material containing a metal which absorbs and discharges lithium is formed on a current collector and the thin layer of the anode active material is divided into columns by a gap formed along the thickness thereof, a compound represented by the following formula is contained in the non-aqueous electrolyte. A-N═C═O In the above formula, A represents an element or a group other than hydrogen.
摘要翻译：本发明的目的是为了防止负极活性物质的劣化和膨胀，并且提高非水电解质二次电池的充放电循环特性，该非水电解质二次电池包括集电体上具有负极活性物质的薄层的阳极，金属。为了解决这个问题，在非水电解质二次电池中，在集电体上形成含有吸收和放出锂的金属的负极活性物质的薄层，阳极活性物质的薄层被分成列沿其厚度形成的间隙由下式表示的化合物包含在非水电解质中。 A-N = C = O在上式中，A表示氢以外的元素或基团。

12. 发明申请

US20110151338A1 NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY 有权
标题翻译：非水电解质二次电池
公开(公告)号：US20110151338A1
公开(公告)日：2011-06-23
申请号：US13059770
申请日：2009-08-04
申请人： Hidekazu Yamamoto , Atsushi Fukui , Taizou Sunano , Maruo Kamino
发明人： Hidekazu Yamamoto , Atsushi Fukui , Taizou Sunano , Maruo Kamino
IPC分类号： H01M10/056
CPC分类号： H01M10/052 , H01M4/134 , H01M4/38 , H01M4/386 , H01M4/622 , H01M6/164 , H01M10/0567 , H01M10/0569 , H01M2300/0034 , Y02E60/122
摘要： The present invention is made to improve charge-discharge cycle performances under high temperature environment in a non-aqueous electrolyte secondary battery using a negative electrode containing a negative electrode active material of particulate silicon and/or silicon alloy and a binding agent.A non-aqueous electrolyte secondary battery according to the present invention includes a positive electrode 11, a negative electrode 12, a separator 13, and a non-aqueous electrolyte, wherein the negative electrode includes a negative electrode active material containing particulate silicon and/or silicon alloy and a binding agent, and the non-aqueous electrolyte contains fluorinated cyclic carbonate and a prescribed diisocyanate compound, and when Li storage volume per unit area of the negative electrode of the non-aqueous electrolyte secondary battery under charging condition is determined as A and the theoretical maximum Li storage volume per unit area of the negative electrode is determined as B, a utilizing rate (%) of negative electrode which is expressed by (A/B)×100 is 45% or less.
摘要翻译：本发明的目的在于提高使用含有硅和/或硅合金的负极活性物质的负极和粘合剂的非水电解质二次电池在高温环境下的充放电循环性能。根据本发明的非水电解质二次电池包括正极11，负极12，隔膜13和非水电解质，其中所述负极包括含有颗粒状硅的负极活性物质和/或硅合金和粘合剂，非水电解质含有氟化环状碳酸酯和规定的二异氰酸酯化合物，并且当非水电解质二次电池的负极在充电条件下的每单位面积的Li储存容积确定为A 将负极单位面积的理论最大Li储存容量确定为B，由（A / B）×100表示的负极的利用率（％）为45％以下。

13. 发明申请

US20090311609A1 NONAQUEOUS ELECTROLYTE SECONDARY BATTERY AND NONAQUEOUS ELECTROLYTE SOLUTION 有权
标题翻译：非电解电解质二次电池和非电解电解液
公开(公告)号：US20090311609A1
公开(公告)日：2009-12-17
申请号：US11917374
申请日：2006-06-23
申请人： Keiji Saisho , Hidekazu Yamamoto , Masahiro Takehara
发明人： Keiji Saisho , Hidekazu Yamamoto , Masahiro Takehara
IPC分类号： H01M10/26 , H01M6/16 , H01M6/14
CPC分类号： H01M10/0525 , H01M4/13 , H01M10/0566 , H01M10/0567
摘要： The objective of the present invention is to prevent deterioration and expanding of anode active material and to improve charge-discharge cycle characteristics in a non-aqueous electrolyte secondary battery comprising an anode of which current collector has thereon a thin layer of an anode active material containing a metal. To solve this problem, in a non-aqueous electrolyte secondary battery wherein a thin layer of anode active material containing a metal which absorbs and discharges lithium is formed on a current collector and the thin layer of the anode active material is divided into columns by a gap formed along the thickness thereof, a compound represented by the following formula is contained in the non-aqueous electrolyte. A-N═C═O In the above formula, A represents an element or a group other than hydrogen.
摘要翻译：本发明的目的是为了防止负极活性物质的劣化和膨胀，并且提高非水电解质二次电池的充放电循环特性，该非水电解质二次电池包括集电体上具有负极活性物质的薄层的阳极，金属。为了解决这个问题，在非水电解质二次电池中，在集电体上形成含有吸收和放出锂的金属的负极活性物质的薄层，阳极活性物质的薄层被分成列沿其厚度形成的间隙由下式表示的化合物包含在非水电解质中。 A-N-C-O在上式中，A表示氢以外的元素或基团。

14. 发明授权

US06399460B1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06399460B1
公开(公告)日：2002-06-04
申请号：US09679884
申请日：2000-10-05
申请人： Yasuo Yamaguchi , Hidekazu Yamamoto
发明人： Yasuo Yamaguchi , Hidekazu Yamamoto
IPC分类号： H01L2176
CPC分类号： H01L21/76264 , H01L21/76283 , H01L29/78609 , H01L29/78615 , H01L29/78618 , Y10S257/913
摘要： A method of manufacturing a semiconductor device including the steps of (a) forming an element isolation insulating film in an element isolation region of a SOI substrate of a stacked structure in which a semiconductor substrate, insulating layer, and semiconductor layer are stacked in this order, and (b) forming, in an element formation region of the SOI substrate, a transistor having a channel formation region selectively disposed in a main surface of the semiconductor layer, a gate structure on the channel formation region, and source/drain regions disposed is the main surface of the semiconductor layer and the adjacent channel formation region. The method also includes the step of (c) selectively growing, after said steps (a) and (b), a polycrystal semiconductor layer on the source/drain regions in a self-aligned manner, which is prescribed by the element isolation insulating film and the gate structure.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：（a）在层叠结构的SOI衬底的元件隔离区域中形成元件隔离绝缘膜，其中半导体衬底，绝缘层和半导体层以该顺序堆叠，以及（b）在所述SOI衬底的元件形成区域中形成具有选择性地设置在所述半导体层的主表面中的沟道形成区域的晶体管，所述沟道形成区域上的栅极结构和设置在所述沟道形成区域的源极/漏极区域是半导体层和相邻沟道形成区域的主表面。该方法还包括以下步骤：（c）在所述步骤（a）和（b）之后，以元件隔离绝缘膜规定的自对准方式在源极/漏极区上选择性地生长多晶半导体层和门结构。

15. 发明授权

US06271541B1 Semiconductor device with high gettering capability to impurity present in semiconductor layer of SOI substrate 有权
公开(公告)号：US06271541B1
公开(公告)日：2001-08-07
申请号：US09476780
申请日：1999-12-30
申请人： Yasuo Yamaguchi , Hidekazu Yamamoto
发明人： Yasuo Yamaguchi , Hidekazu Yamamoto
IPC分类号： H01L2976
摘要： A semiconductor device is provided which is capable of removing the heavy metal impurity in a SOI layer by gettering, and realizing an improvement in breakdown voltage and reliability. The semiconductor device comprises polysilicon regions functioning as a gettering site, which are selectively formed in a buried fashion, such as to make no contact with a gate insulating film and an element isolation insulating film, in a main surface of part of a SOI layer where a drain region and a source region are disposed; and contact holes being filled with polysilicon plug functioning as a gettering site, and extending through an interlayer insulating film between an upper surface of the interlayer insulating film and an upper surface of the polysilicon regions.

16. 发明授权

US09153841B2 Non-aqueous electrolyte secondary battery, and non-aqueous electrolyte solution for non-aqueous electrolyte secondary battery 有权
标题翻译：非水电解质二次电池，非水电解质二次电池用非水电解液
公开(公告)号：US09153841B2
公开(公告)日：2015-10-06
申请号：US13639396
申请日：2011-04-28
申请人： Hidekazu Yamamoto , Kouhei Tuduki , Taizou Sunano , Maruo Kamino , Youichi Ohashi , Minoru Kotato
发明人： Hidekazu Yamamoto , Kouhei Tuduki , Taizou Sunano , Maruo Kamino , Youichi Ohashi , Minoru Kotato
IPC分类号： H01M6/16 , H01M10/0567 , H01M10/0525 , H01M10/0569 , H01M4/1393 , H01M4/133 , H01M4/1395 , H01M4/134
CPC分类号： H01M10/0567 , H01M4/133 , H01M4/134 , H01M4/1393 , H01M4/1395 , H01M10/0525 , H01M10/0569 , H01M2300/0034 , Y02E60/122
摘要： Provided is a nonaqueous electrolyte secondary battery which, even in the case of using a low-viscosity solvent having a narrow potential window, can increase the electrochemical stability of the nonaqueous electrolyte solution and suppress side reactions of the nonaqueous electrolyte solution during charge and discharge to reduce the degradation of the battery characteristics and has an excellent storage characteristic in high-temperature environments and a nonaqueous electrolyte solution for the nonaqueous electrolyte secondary battery. The nonaqueous electrolyte secondary battery includes: a positive electrode containing a positive-electrode active material; a negative electrode containing a negative-electrode active material; and a nonaqueous electrolyte solution containing a solute dissolved in a nonaqueous solvent, wherein the nonaqueous electrolyte solution further contains benzotrifluoride and a diisocyanate compound and the content of benzotrifluoride is 5% by volume or more in the nonaqueous electrolyte solution except the solute.
摘要翻译：提供一种非水电解质二次电池，即使在使用具有窄势窗的低粘度溶剂的情况下，也能够提高非水电解液的电化学稳定性，抑制非水电解液在充放电期间的副反应降低电池特性的劣化，并且在高温环境中具有优异的储存特性和用于非水电解质二次电池的非水电解质溶液。非水电解质二次电池包括：含有正极活性物质的正极; 含有负极活性物质的负极; 以及含有溶解在非水溶剂中的溶质的非水电解液，其中所述非水电解质溶液还含有苯并三氟化物和二异氰酸酯化合物，并且所述非水电解质溶液中除所述溶质以外，所述三氟甲苯的含量为5体积％以上。

17. 发明授权

US08927158B2 Nonaqueous electrolyte secondary battery and nonaqueous electrolytic solution for nonaqueous electrolyte secondary battery 有权
标题翻译：非水电解质二次电池和非水电解质二次电池用非水电解液
公开(公告)号：US08927158B2
公开(公告)日：2015-01-06
申请号：US13103232
申请日：2011-05-09
申请人： Hidekazu Yamamoto , Kouhei Tuduki , Taizou Sunano , Maruo Kamino , Youichi Ohashi , Minoru Kotato
发明人： Hidekazu Yamamoto , Kouhei Tuduki , Taizou Sunano , Maruo Kamino , Youichi Ohashi , Minoru Kotato
IPC分类号： H01M6/18 , H01M4/134 , H01M10/0567 , H01M10/0568 , H01M10/0569
CPC分类号： H01M4/134 , H01M10/0567 , H01M10/0568 , H01M10/0569 , Y02E60/122
摘要： A nonaqueous electrolyte secondary battery includes a positive electrode having a positive-electrode active material, a negative electrode having a negative-electrode active material, and a nonaqueous electrolytic solution having a nonaqueous solvent dissolving a solute. The negative-electrode active material includes powdered silicon and/or a silicon alloy, the nonaqueous electrolytic solution includes additives composed of at least one fluorinated lithium phosphate selected from the group consisting of lithium monofluorophosphate, lithium difluorophosphate, and lithium trifluorophosphate and a diisocyanate compound, and the nonaqueous solvent includes a chain carbonate compound.
摘要翻译：非水电解质二次电池包括具有正极活性物质的正极，具有负极活性物质的负极和具有溶解溶质的非水溶剂的非水电解液。负极活性物质包括硅粉和/或硅合金，该非水电解液包括由至少一种选自单氟磷酸锂，二氟磷酸锂和三氟磷酸锂的氟化锂磷酸盐和二异氰酸酯化合物组成的添加剂，非水溶剂包括链状碳酸酯化合物。

18. 发明申请

US20110274986A1 NONAQUEOUS ELECTROLYTE SECONDARY BATTERY AND NONAQUEOUS ELECTROLYTIC SOLUTION FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERY 有权
标题翻译：非电解电解质二次电池非电解二次电池和非电解电解质
公开(公告)号：US20110274986A1
公开(公告)日：2011-11-10
申请号：US13103232
申请日：2011-05-09
申请人： Hidekazu Yamamoto , Kouhei Tuduki , Taizou Sunano , Maruo Kamino , Youichi Ohashi , Minoru Kotato
发明人： Hidekazu Yamamoto , Kouhei Tuduki , Taizou Sunano , Maruo Kamino , Youichi Ohashi , Minoru Kotato
IPC分类号： H01M10/0564
CPC分类号： H01M4/134 , H01M10/0567 , H01M10/0568 , H01M10/0569 , Y02E60/122
摘要： A nonaqueous electrolyte secondary battery includes a positive electrode having a positive-electrode active material, a negative electrode having a negative-electrode active material, and a nonaqueous electrolytic solution having a nonaqueous solvent dissolving a solute. The negative-electrode active material includes powdered silicon and/or a silicon alloy, the nonaqueous electrolytic solution includes additives composed of at least one fluorinated lithium phosphate selected from the group consisting of lithium monofluorophosphate, lithium difluorophosphate, and lithium trifluorophosphate and a diisocyanate compound, and the nonaqueous solvent includes a chain carbonate compound.
摘要翻译：非水电解质二次电池包括具有正极活性物质的正极，具有负极活性物质的负极和具有溶解溶质的非水溶剂的非水电解液。负极活性物质包括硅粉和/或硅合金，该非水电解液包括由至少一种选自单氟磷酸锂，二氟磷酸锂和三氟磷酸锂的氟化锂磷酸盐和二异氰酸酯化合物组成的添加剂，非水溶剂包括链状碳酸酯化合物。

19. 发明申请

US20100081063A1 NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY 审中-公开
标题翻译：非水电解质二次电池
公开(公告)号：US20100081063A1
公开(公告)日：2010-04-01
申请号：US12568332
申请日：2009-09-28
申请人： Hidekazu Yamamoto , Atsushi Fukui , Taizou Sunano , Maruo Kamino
发明人： Hidekazu Yamamoto , Atsushi Fukui , Taizou Sunano , Maruo Kamino
IPC分类号： H01M6/16
CPC分类号： H01M10/0568 , H01M4/0435 , H01M4/134 , H01M4/621 , H01M4/70 , H01M10/052 , H01M10/0569
摘要： A non-aqueous electrolyte secondary battery has a positive electrode, a negative electrode, a separator interposed between the positive electrode and the negative electrode, and a non-aqueous electrolyte dissolving a solute in a non-aqueous solvent wherein the negative electrode contains a negative electrode active material containing powdered silicon and/or silicon alloy and a binding agent, and the non-aqueous electrolyte contains a fluorinated cyclic carbonate represented by a general formula (1) below, and wherein when Li storage volume per unit area in the negative electrode during charging is determined as A and the theoretical maximum Li storage volume per unit area in the negative electrode is determined as B, a utilizing rate (%) of negative electrode as expressed by (A/B)×100 is 45% or less.
摘要翻译：非水电解质二次电池具有正极，负极，插入在正极和负极之间的隔膜以及将溶质溶解在非水溶剂中的非水电解质，其中负极含有负极含有硅和/或硅合金粉末和粘合剂的电极活性材料，非水电解质含有下述通式（1）表示的氟化环状碳酸酯，其中当负极中的每单位面积的Li储存容积在充电期间确定为A，将负极中每单位面积的理论最大Li储存容积确定为B，由（A / B）×100表示的负极的利用率（％）为45％以下。

20. 发明申请

US20090267191A1 SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090267191A1
公开(公告)日：2009-10-29
申请号：US12159787
申请日：2006-02-24
申请人： Tadaharu Minato , Hidekazu Yamamoto
发明人： Tadaharu Minato , Hidekazu Yamamoto
IPC分类号： H01L29/34 , H01L21/322 , H01L21/78
CPC分类号： H01L21/3221 , H01L29/66348 , H01L29/7397
摘要： A device and a device manufacturing process. First, a gettering layer is formed on the bottom surface of a silicon substrate. Gates having a MOS structure are then formed on the principal surface of the silicon substrate, and the gettering layer is removed. According to this manufacturing method, the formation of the gates having a MOS structure is performed such that the gettering layer getters dissolved oxygen present in the silicon substrate. This reduces the concentration of dissolved oxygen in the silicon substrate, resulting in improved device characteristics.
摘要翻译：一种设备和设备制造过程。首先，在硅衬底的底面上形成吸气层。然后在硅衬底的主表面上形成具有MOS结构的栅极，除去吸杂层。根据该制造方法，进行具有MOS结构的栅极的形成，使得吸杂层吸收存在于硅衬底中的溶解氧。这降低了硅衬底中溶解氧的浓度，从而改善了器件特性。

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