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11. 发明申请

US20090218621A1 SEMICONDUCTOR COMPONENT WITH A DRIFT REGION AND A DRIFT CONTROL REGION 有权
标题翻译：具有DRIFT区域和DRIFT控制区域的半导体元件
公开(公告)号：US20090218621A1
公开(公告)日：2009-09-03
申请号：US11996906
申请日：2006-07-27
申请人： Frank Pfirsch , Anton Mauder , Armin Willmeroth , Hans-Joachim Schulze , Stefan Sedlmaier , Markus Zundel , Franz Hirler , Arunjai Mittal
发明人： Frank Pfirsch , Anton Mauder , Armin Willmeroth , Hans-Joachim Schulze , Stefan Sedlmaier , Markus Zundel , Franz Hirler , Arunjai Mittal
IPC分类号： H01L29/78 , H01L27/06 , H01L29/739
CPC分类号： H01L29/7803 , H01L29/0634 , H01L29/0653 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/4916 , H01L29/66734 , H01L29/7802 , H01L29/7804 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/872
摘要： A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.
摘要翻译：具有漂移区域和漂移控制区域的半导体部件。一个实施例包括半导体本体中具有第一导电类型的漂移区的半导体本体。由半导体材料组成的漂移控制区域至少部分地布置成与半导体本体中的漂移区域相邻。在漂移区域和漂移控制区域之间布置积累电介质。

12. 发明授权

US07436023B2 High blocking semiconductor component comprising a drift section 有权
标题翻译：高阻塞半导体元件包括漂移部分
公开(公告)号：US07436023B2
公开(公告)日：2008-10-14
申请号：US11464004
申请日：2006-08-11
申请人： Franz Hirler , Anton Mauder , Frank Pfirsch
发明人： Franz Hirler , Anton Mauder , Frank Pfirsch
IPC分类号： H01L23/58
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/0649 , H01L29/0653 , H01L29/0657 , H01L29/407 , H01L29/41766 , H01L29/8083 , H01L29/872 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component having a drift path (2) which is formed in a semiconductor body (1), is composed of a semiconductor material of first conductance type. The drift path (2) is arranged between at least one first and one second electrode (3, 4) and has a trench structure in the form of at least one trench (18). A dielectric material which is referred to as a high-k material and has a relative dielectric constant εr where εr≧20 is arranged in the trench structure such that at least one high-k material region (5) and one semiconductor material region (6) of the first conductance type are arranged in the area of the drift path (2).
摘要翻译：具有形成在半导体本体（1）中的漂移路径（2）的半导体部件由第一导电型半导体材料构成。漂移路径（2）布置在至少一个第一和第二电极（3,4）之间，并具有至少一个沟槽（18）形式的沟槽结构。被称为高k材料并且具有相对介电常数εε的电介质材料，其中ε= r / O 2 = 20布置在沟槽结构中，使得在第一电导型的至少一个高k材料区域（5）和一个半导体材料区域（6）被布置在漂移路径（2）的区域中。

13. 发明申请

US20070190714A1 Trench transistor and method for fabricating a trench transistor with high-energy-implanted drain 有权
标题翻译：沟槽晶体管和制造具有高能量注入漏极的沟槽晶体管的方法
公开(公告)号：US20070190714A1
公开(公告)日：2007-08-16
申请号：US11606628
申请日：2006-11-30
申请人： Franz Hirler , Frank Pfirsch
发明人： Franz Hirler , Frank Pfirsch
IPC分类号： H01L21/8238 , H01L29/00
CPC分类号： H01L21/26513 , H01L29/0847 , H01L29/0878
摘要： A method is disclosed for fabricating a trench transistor, in which there are formed, within an epitaxial layer deposited above a substrate of a first conductivity type, a trench and, within the trench, a gate dielectric and a gate electrode and, in a body region of a second conductivity type adjoining the trench a source region of the first conductivity type, a drift region of the first conductivity type forming a drain zone being formed at the end of the junction between the substrate and the epitaxial layer by means of one or more high-energy implantations, the lower end of the trench projecting into said drift region, and to a trench transistor of this type formed as a low-voltage transistor.
摘要翻译：公开了一种用于制造沟槽晶体管的方法，其中在形成于外延层内的外延层中形成第一导电类型的衬底，沟槽和沟槽内的栅极电介质和栅电极，并且在体内第二导电类型的与第一导电类型的源极区相邻的第二导电类型的区域，形成漏极区的第一导电类型的漂移区域通过一个或多个第一导电类型的衬底和外延层之间的结的端部形成更高能量的注入，突出到所述漂移区域的沟槽的下端，以及形成为低压晶体管的这种类型的沟槽晶体管。

14. 发明申请

US20050205962A1 Trench transistor and method for fabricating a trench transistor with high-energy-implanted drain 审中-公开
标题翻译：沟槽晶体管和制造具有高能量注入漏极的沟槽晶体管的方法
公开(公告)号：US20050205962A1
公开(公告)日：2005-09-22
申请号：US11023038
申请日：2004-12-23
申请人： Franz Hirler , Frank Pfirsch
发明人： Franz Hirler , Frank Pfirsch
IPC分类号： H01L21/265 , H01L21/336 , H01L29/08 , H01L29/15 , H01L31/0312 , H01L29/00
CPC分类号： H01L21/26513 , H01L29/0847 , H01L29/0878
摘要： The invention relates to a method for fabricating a trench transistor, in which there are formed, within an epitaxial layer (11, 11′) deposited above a substrate (10) of a first conductivity type (n), a trench (14) and, within the trench (14), a gate dielectric (15) and a gate electrode (16) and, in a body region (20) of a second conductivity type (p) adjoining the trench (14) a source region (13) of the first conductivity type (n), a drift region (12) of the first conductivity type (n) forming a drain zone being formed at the end of the junction between the substrate (10) and the epitaxial layer (11, 11′) by means of one or more high-energy implantations, the lower end (U) of the trench (14) projecting into said drift region (12), and to a trench transistor of this type formed as a low-voltage transistor.
摘要翻译：本发明涉及一种制造沟槽晶体管的方法，其中形成在沉积在第一导电类型（n）的衬底（10）上方的外延层（11,11'），沟槽（14）和，在沟槽（14）内，栅极电介质（15）和栅电极（16），并且在与沟槽（14）相邻的第二导电类型（p）的体区（20）中，源区（13）的第一导电类型（n）的第一导电类型（n）的漂移区域（12）形成在衬底（10）和外延层（11,11'）之间的接合端的端部处，）通过一个或多个高能量注入，突出到所述漂移区（12）中的沟槽（14）的下端（U）以及形成为低电压晶体管的这种类型的沟槽晶体管。

15. 发明授权

US09553178B2 Semiconductor component with an emitter control electrode 有权
标题翻译：具有发射极控制电极的半导体元件
公开(公告)号：US09553178B2
公开(公告)日：2017-01-24
申请号：US12977755
申请日：2010-12-23
申请人： Franz Hirler , Anton Mauder , Frank Pfirsch , Hans-Joachim Schulze
发明人： Franz Hirler , Anton Mauder , Frank Pfirsch , Hans-Joachim Schulze
IPC分类号： H01L29/66 , H01L29/739 , H01L29/06 , H01L29/423
CPC分类号： H01L29/7397 , H01L29/0696 , H01L29/4236
摘要： A semiconductor component includes a first emitter zone of a first conductivity type, a second emitter zone of a second conductivity type, a first base zone arranged between the first and second emitter zones and a first control structure. The first control structure includes a control electrode arranged adjacent the first emitter zone, the control electrode being insulated from the first emitter zone by a first dielectric layer and extending in a current flow direction of the semiconductor component. The first control structure includes a first control connection and at least one first connection zone arranged between the first control connection and the control electrode and comprising a semiconductor material.
摘要翻译：半导体部件包括第一导电类型的第一发射极区域，第二导电类型的第二发射极区域，布置在第一和第二发射极区域之间的第一基极区域和第一控制结构。第一控制结构包括布置在第一发射区附近的控制电极，控制电极通过第一介电层与第一发射区绝缘，并沿着半导体部件的电流流动方向延伸。第一控制结构包括第一控制连接和布置在第一控制连接和控制电极之间并且包括半导体材料的至少一个第一连接区域。

16. 发明授权

US08674727B2 Circuit and method for driving a transistor component based on a load condition 有权
标题翻译：基于负载条件驱动晶体管部件的电路和方法
公开(公告)号：US08674727B2
公开(公告)日：2014-03-18
申请号：US12873146
申请日：2010-08-31
申请人： Anton Mauder , Franz Hirler , Frank Pfirsch
发明人： Anton Mauder , Franz Hirler , Frank Pfirsch
IPC分类号： H03K3/00
CPC分类号： H03K17/687 , H03K17/122 , H03K2017/6878
摘要： A circuit arrangement includes a transistor component with a gate terminal, a control terminal, and a load path between a source and a drain terminal. A drive circuit is connected to the control terminal and configured to determine a load condition of the transistor component, to provide a drive potential to the control terminal, and to adjust the drive potential dependent on the load condition.
摘要翻译：电路装置包括具有栅极端子的晶体管部件，控制端子以及源极和漏极端子之间的负载路径。驱动电路连接到控制端子并且被配置为确定晶体管部件的负载状况，以向控制端子提供驱动电位，并根据负载条件来调节驱动电位。

17. 发明申请

US20130001640A1 SEMICONDUCTOR DEVICE HAVING A FLOATING SEMICONDUCTOR ZONE 有权
标题翻译：具有浮动半导体区域的半导体器件
公开(公告)号：US20130001640A1
公开(公告)日：2013-01-03
申请号：US13610240
申请日：2012-09-11
申请人： Frank Pfirsch , Maria Cotorogea , Franz Hirler , Franz-Josef Niedernostheide , Thomas Raker , Hans-Joachim Schulze , Hans Peter Felsl
发明人： Frank Pfirsch , Maria Cotorogea , Franz Hirler , Franz-Josef Niedernostheide , Thomas Raker , Hans-Joachim Schulze , Hans Peter Felsl
IPC分类号： H01L29/739
CPC分类号： H01L29/7813 , H01L29/0619 , H01L29/0696 , H01L29/407 , H01L29/7397
摘要： A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.
摘要翻译：半导体器件包括从表面延伸到半导体本体中的第一沟槽和第二沟槽。第一导电类型的主体区域邻接第一沟槽的第一侧壁和第二沟槽的第一侧壁，主体区域包括邻近源极结构的沟道部分，并且被配置为通过栅极结构来控制其导电性。通道部分形成在第二沟槽的第一侧壁处，并且不形成在第一沟槽的第一侧壁处。第一导电类型的电浮动半导体区域邻接第一沟槽，并且具有位于半导体本体内比底体区域的底侧更深的底侧。

18. 发明申请

US20120049898A1 Circuit Arrangement with an Adjustable Transistor Component 有权
标题翻译：具有可调晶体管元件的电路布置
公开(公告)号：US20120049898A1
公开(公告)日：2012-03-01
申请号：US12873146
申请日：2010-08-31
申请人： Anton Mauder , Franz Hirler , Frank Pfirsch
发明人： Anton Mauder , Franz Hirler , Frank Pfirsch
IPC分类号： H03B1/00
CPC分类号： H03K17/687 , H03K17/122 , H03K2017/6878
摘要： A circuit arrangement includes a transistor component with a gate terminal, a control terminal, and a load path between a source and a drain terminal. A drive circuit is connected to the control terminal and configured to determine a load condition of the transistor component, to provide a drive potential to the control terminal, and to adjust the drive potential dependent on the load condition.
摘要翻译：电路装置包括具有栅极端子的晶体管部件，控制端子以及源极和漏极端子之间的负载路径。驱动电路连接到控制端子并且被配置为确定晶体管部件的负载状况，以向控制端子提供驱动电位，并根据负载条件来调节驱动电位。

19. 发明申请

US20120049273A1 DEPLETION MOS TRANSISTOR AND CHARGING ARRANGEMENT 有权
标题翻译：绝缘MOS晶体管和充电装置
公开(公告)号：US20120049273A1
公开(公告)日：2012-03-01
申请号：US12868918
申请日：2010-08-26
申请人： Franz Hirler , Anton Mauder , Joachim Weyers , Frank Pfirsch
发明人： Franz Hirler , Anton Mauder , Joachim Weyers , Frank Pfirsch
IPC分类号： H01L29/78 , H01L27/088
CPC分类号： H01L29/7813 , H01L21/823487 , H01L27/0629 , H01L27/0883 , H01L29/0653 , H01L29/0696 , H01L29/407 , H01L29/4238 , H01L29/7803 , H01L29/7828
摘要： A depletion transistor includes a source region and a drain region of a first conductivity type, a channel region of the first conductivity type arranged between the source region and the drain region and a first gate electrode arranged adjacent the channel region and dielectrically insulated from the channel region by a gate dielectric. The depletion transistor further includes a first discharge region of a second conductivity type arranged adjacent the gate dielectric and electrically coupled to a terminal for a reference potential. The depletion transistor can be included in a charging circuit.
摘要翻译：耗尽型晶体管包括源区和漏区，第一导电类型，第一导电类型的沟道区域布置在源区和漏区之间，第一栅电极邻近沟道区设置并与沟道介电绝缘区域。耗尽晶体管还包括第二导电类型的第一放电区域，其布置成邻近栅极电介质并电耦合到用于参考电位的端子。耗尽晶体管可以包括在充电电路中。

20. 发明申请

US20120049270A1 Method for Forming a Semiconductor Device, and a Semiconductor with an Integrated Poly-Diode 有权
标题翻译：用于形成半导体器件的方法和具有集成多极二极管的半导体
公开(公告)号：US20120049270A1
公开(公告)日：2012-03-01
申请号：US12871038
申请日：2010-08-30
申请人： Franz Hirler , Anton Mauder , Frank Pfirsch , Hans-Joachim Schulze
发明人： Franz Hirler , Anton Mauder , Frank Pfirsch , Hans-Joachim Schulze
IPC分类号： H01L29/78 , H01L21/336 , H01L21/329
CPC分类号： H01L29/66143 , H01L21/823487 , H01L29/0626 , H01L29/1095 , H01L29/41766 , H01L29/456 , H01L29/4933 , H01L29/6609 , H01L29/6634 , H01L29/66348 , H01L29/66727 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7803 , H01L29/7804 , H01L29/7808 , H01L29/7813
摘要： A method for forming a field effect power semiconductor is provided. The method includes providing a semiconductor body, a conductive region arranged next to a main surface of the semiconductor body, and an insulating layer arranged on the main horizontal surface. A narrow trench is etched through the insulating layer to expose the conductive region. A polycrystalline semiconductor layer is deposited and a vertical poly-diode structure is formed. The polycrystalline semiconductor layer has a minimum vertical thickness of at least half of the maximum horizontal extension of the narrow trench. A polycrystalline region which forms at least a part of a vertical poly-diode structure is formed in the narrow trench by maskless back-etching of the polycrystalline semiconductor layer. Further, a semiconductor device with a trench poly-diode is provided.
摘要翻译：提供了一种用于形成场效应功率半导体的方法。该方法包括提供半导体本体，邻近半导体主体的主表面布置的导电区域和布置在主水平表面上的绝缘层。通过绝缘层蚀刻窄沟槽以暴露导电区域。沉积多晶半导体层并形成垂直多晶二极管结构。多晶半导体层的最小垂直厚度为窄沟槽的最大水平延伸的至少一半。通过多晶半导体层的无掩模背面蚀刻，在窄沟槽中形成形成垂直多晶二极管结构的至少一部分的多晶区域。此外，提供了具有沟槽多晶二极管的半导体器件。

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