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    • 12. 发明授权
    • Peak enhanced magnetoresistive read transducer
    • 峰值增强型磁阻读取传感器
    • US5581427A
    • 1996-12-03
    • US238110
    • 1994-05-04
    • Joseph Shao-Ying FengMohamad T. KrounbiDouglas J. Werner
    • Joseph Shao-Ying FengMohamad T. KrounbiDouglas J. Werner
    • G11B5/00G11B5/09G11B5/39G11B5/30
    • G11B5/3932G11B5/00G11B5/3903G11B2005/0008G11B5/09
    • An MR read transducer is provided which has a central region located between a pair of end regions. The central region and the pair of end regions extend along a width of the MR read transducer. An MR layer extends along the width of the MR read transducer and has an active layer portion located between a pair of passive layer portions, the active layer portion being located in the central region and each passive layer portion being located in a respective end region. A layer is located in the central region and magnetostatically coupled to the active layer portion of the MR layer for transversely biasing the MR layer. Each passive layer portion of the MR layer is permeable so that it is responsive to externally applied magnetic fields. The passive layer portions of the MR layer are the only permeable portions of the MR read transducer in the end regions of the MR read transducer, so a response by either passive layer of the MR layer to a magnetic signal will result in a supralinearly increased net response of the active portion of the MR layer to the same applied magnetic field signal. This arrangement increases the amplitude and the sharpness of the peak of a signal response of the MR read transducer to the field from a recorded transition.
    • 提供了一种MR读取换能器,其具有位于一对端部区域之间的中心区域。 中心区域和一对末端区域沿着MR读取换能器的宽度延伸。 MR层沿着MR读取换能器的宽度延伸,并且具有位于一对无源层部分之间的有源层部分,有源层部分位于中心区域中,每个无源层部分位于相应的端部区域中。 层位于中心区域并且静磁耦合到MR层的有源层部分以横向偏置MR层。 MR层的每个无源层部分是可渗透的,使得其响应于外部施加的磁场。 MR层的无源层部分是MR读取换能器的端部区域中的MR读取换能器的唯一可渗透部分,因此MR层的无源层对磁信号的响应将导致网络上部网络 MR层的有源部分对相同的施加的磁场信号的响应。 这种布置将MR读取传感器的信号响应的峰值的幅度和锐度从记录的转变增加到场。
    • 14. 发明授权
    • Method of fabricating a magnetoresistive read transducer
    • 制造磁阻读取传感器的方法
    • US5458908A
    • 1995-10-17
    • US310906
    • 1994-09-21
    • Mohamad T. KrounbiKenneth T. KungChing H. Tsang
    • Mohamad T. KrounbiKenneth T. KungChing H. Tsang
    • G11B5/39G11B5/40H01L43/08B05D5/12
    • G11B5/399G11B5/3906G11B5/40
    • A magnetoresistive (MR) read transducer assembly having passive end regions separated by a central active region, and a method of fabricating it. Layers of a first biasing material and a nonmagnetic decoupling spacer material are deposited on a substrate, then covered by a mask only in the central region. By etching or ion milling, those parts of the layers not covered by the mask are removed to define a transverse biasing means in the central region and define the passive end regions. With the same mask remaining in place, a conductive material and exchange layer comprising a second biasing material are deposited over all regions. The mask is removed to define and provide conductor leads and longitudinal biasing means only in the end regions. MR material is thereafter deposited as a continuous thin film in direct contact with the central region containing the transverse biasing means and in direct contact with the end regions containing the longitudinal biasing means. This fabrication technique has no critical etching steps requiring stopping at or near a particular interface and the MR film provides a continuous platform for carrying current without butted junctions in the current path.
    • 具有由中心有源区域分离的被动端区域的磁阻(MR)读取换能器组件及其制造方法。 第一偏置材料和非磁性去耦隔离材料的层沉积在基底上,然后仅在中心区域被掩模覆盖。 通过蚀刻或离子研磨,去除未被掩模覆盖的层的那些部分以在中心区域中限定横向偏置装置并且限定被动端部区域。 在相同的掩模保持就位的情况下,在所有区域上沉积包括第二偏置材料的导电材料和交换层。 去除掩模以限定并仅在端部区域中提供导体引线和纵向偏置装置。 然后,MR材料作为连续的薄膜沉积,其与包含横向偏置装置的中心区域直接接触并与包含纵向偏置装置的端部区域直接接触。 该制造技术没有要求在特定界面处或附近停止的关键蚀刻步骤,并且MR膜提供用于在当前路径中承载没有对接结的电流的连续平台。