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    • 13. 发明授权
    • High-performance integrated microactuator, particularly for a hard disk read/write transducer
    • 高性能集成微型致动器,特别适用于硬盘读写传感器
    • US06404599B1
    • 2002-06-11
    • US09409584
    • 1999-09-30
    • Benedetto Vigna
    • Benedetto Vigna
    • G11B2124
    • H02N1/006G11B5/5569
    • A microactuator comprises a stator element and a rotor element which are capacitively coupled. The rotor element comprises a suspended mass and a plurality of movable drive arms extending radially from the suspended mass and biased at a reference potential. The stator element comprises a plurality of first and second fixed drive arms associated with respective movable drive arms and biased at a first drive potential. A mechanical damping structure is formed by at least one movable damping arm extending radially from the suspended mass and by at least one first and one second fixed damping arm associated with the movable damping arm and biased at said reference potential, to dampen settling oscillations of the rotor element.
    • 微型致动器包括电容耦合的定子元件和转子元件。 转子元件包括悬挂质量和从悬挂质量块径向延伸并以参考电位偏置的多个可移动驱动臂。 定子元件包括与相应的可移动驱动臂相关联并且以第一驱动电位偏置的多个第一和第二固定驱动臂。 机械阻尼结构由至少一个从悬挂质量块径向延伸的可移动阻尼臂以及与可移动阻尼臂相关联的至少一个第一固定阻尼臂和一个第二固定阻尼臂形成,并被偏置在所述参考电位处,以阻尼 转子元件。
    • 14. 发明授权
    • Process for manufacturing integrated semiconductor devices comprising a chemoresistive gas microsensor
    • 用于制造包括化学耐药性微量传感器的集成半导体器件的方法
    • US06326229B1
    • 2001-12-04
    • US09405893
    • 1999-09-24
    • Ubaldo MastromatteoBenedetto Vigna
    • Ubaldo MastromatteoBenedetto Vigna
    • H01L2100
    • G01N27/12
    • To manufacture integrated semiconductor devices comprising chemoresistive gas microsensors, a semiconductor material body is first formed, on the semiconductor material body are successively formed, reciprocally superimposed, a sacrificial region of metallic material, formed at the same time and on the same level as metallic connection regions for the sensor, a heater element, electrically and physically separated from the sacrificial region and a gas sensitive element, electrically and physically separated from the heater element; openings are formed laterally with respect to the heater element and to the gas sensitive element, which extend as far as the sacrificial region and through which the sacrificial region is removed at the end of the manufacturing process.
    • 为了制造包括化学耐化学气体微传感器的集成半导体器件,首先形成半导体材料体,在半导体材料体上依次形成与金属连接同时形成的金属材料的牺牲区域, 用于传感器的区域,与牺牲区电气和物理分离的加热器元件和气体敏感元件,与加热器元件电和物理分离; 开口相对于加热器元件和气体敏感元件横向形成,气体敏感元件延伸到牺牲区域并且在制造过程结束时除去牺牲区域。