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11. 发明申请

US20100224889A1 Polychromatic LED's and Related Semiconductor Devices 有权
标题翻译：多色LED和相关半导体器件
公开(公告)号：US20100224889A1
公开(公告)日：2010-09-09
申请号：US12781227
申请日：2010-05-17
申请人： Thomas J. Miller , Michael A. Haase , Xiaoguang Sun
发明人： Thomas J. Miller , Michael A. Haase , Xiaoguang Sun
IPC分类号： H01L33/08 , H01L33/04
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/0008 , H01L33/06
摘要： A semiconductor device is provided comprising a first potential well located within a pn junction and a second potential well not located within a pn junction. The potential wells may be quantum wells. The semiconductor device is typically an LED, and may be a white or near-white light LED. The semiconductor device may additionally comprise a third potential well not located within a pn junction. The semiconductor device may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the second or third quantum wells. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided.
摘要翻译：提供了一种半导体器件，其包括位于pn结内的第一势阱和不位于pn结内的第二势阱。势阱可能是量子阱。半导体器件通常是LED，并且可以是白色或近白色的LED。半导体器件还可以包括不位于pn结内的第三势阱。半导体器件还可以包括围绕或紧密或紧邻第二或第三量子阱的吸收层。此外，提供了包括根据本发明的半导体器件的图形显示装置和照明装置。

12. 发明授权

US07745814B2 Polychromatic LED's and related semiconductor devices 无效
标题翻译：多色LED及相关半导体器件
公开(公告)号：US07745814B2
公开(公告)日：2010-06-29
申请号：US11009241
申请日：2004-12-09
申请人： Thomas J. Miller , Michael A. Haase , Xiaoguang Sun
发明人： Thomas J. Miller , Michael A. Haase , Xiaoguang Sun
IPC分类号： H01L29/06 , H01L27/15
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/0008 , H01L33/06
摘要： A semiconductor device is provided comprising a first potential well located within a pn junction and a second potential well not located within a pn junction. The potential wells may be quantum wells. The semiconductor device is typically an LED, and may be a white or near-white light LED. The semiconductor device may additionally comprise a third potential well not located within a pn junction. The semiconductor device may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the second or third quantum wells. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided.
摘要翻译：提供了一种半导体器件，其包括位于pn结内的第一势阱和不位于pn结内的第二势阱。势阱可能是量子阱。半导体器件通常是LED，并且可以是白色或近白色的LED。半导体器件还可以包括不位于pn结内的第三势阱。半导体器件还可以包括围绕或紧密或紧邻第二或第三量子阱的吸收层。此外，提供了包括根据本发明的半导体器件的图形显示装置和照明装置。

13. 发明授权

US07719015B2 Type II broadband or polychromatic LED's 有权
标题翻译： II型宽带或多色LED
公开(公告)号：US07719015B2
公开(公告)日：2010-05-18
申请号：US11009218
申请日：2004-12-09
申请人： Thomas J. Miller , Michael A. Haase
发明人： Thomas J. Miller , Michael A. Haase
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/08 , H01L33/28
摘要： An LED is provided comprising two or more light-emitting Type II interfaces wherein at least two of the Type II interfaces differ in transition energy by at least 5%, or more typically by at least 10%, and wherein at least one of the Type II interfaces is within a pn junction. Alternately, an LED is provided comprising two or more light-emitting Type II interfaces wherein at least two of the Type II interfaces differ in transition energy by at least 5%, or more typically by at least 10%. The Type II interfaces may include interfaces from a layer which is an electron quantum well and not a hole quantum well, interfaces to a layer which is a hole quantum well and not an electron quantum well; and interfaces that satisfy both conditions simultaneously. The Type II interfaces may be within a pn or pin junction or not within a pn or pin junction. In the later case, emission from the Type II interfaces may be photopumped by a nearby light source. The LED may be a white or near-white light LED. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided.
摘要翻译：提供包括两个或更多个发光II型界面的LED，其中II型界面中的至少两个界面的转换能量不同于至少5％，或更通常至少10％，并且其中至少一种类型 II接口位于pn结内。或者，提供包括两个或更多个发光II型界面的LED，其中至少两个II型界面的跃迁能量不同于至少5％，或更通常至少10％。 II型界面可以包括来自作为电子量子阱而不是空穴量子阱的层的界面，其与作为空穴量子阱而不是电子量子阱的层接合; 和同时满足两个条件的接口。 II型接口可以在pn或pin结内，或者不在pn或pin结内。在后一种情况下，II型接口的发射可能被附近的光源照射。 LED可以是白色或近白色的LED灯。此外，提供了包括根据本发明的半导体器件的图形显示装置和照明装置。

14. 发明授权

US08488641B2 II-VI MQW VSEL on a heat sink optically pumped by a GaN LD 失效
标题翻译： II-VI MQW VSEL在由GaN LD光学泵浦的散热器上
公开(公告)号：US08488641B2
公开(公告)日：2013-07-16
申请号：US13060554
申请日：2009-08-18
申请人： Michael A. Haase , Thomas J. Miller , Xiaoguang Sun
发明人： Michael A. Haase , Thomas J. Miller , Xiaoguang Sun
IPC分类号： H01S3/14 , H01S5/00
CPC分类号： H01S5/041 , B82Y20/00 , H01S5/0215 , H01S5/0217 , H01S5/024 , H01S5/1039 , H01S5/14 , H01S5/18308 , H01S5/2009 , H01S5/2022 , H01S5/2027 , H01S5/309 , H01S5/347 , H01S5/423 , H01S2301/18
摘要： Light sources are disclosed. A disclosed light source includes a III-V based pump light source (170) that includes nitrogen and emits light at a first wavelength. The light source further includes a vertical cavity surface emitting laser (VCSEL) that converts at least a portion of the first wavelength light (174) emitted by the pump light source (170) to at least a partially coherent light at a second wavelength (176). The VCSEL includes first and second mirrors (120, 160) that form an optical cavity for light at the second wavelength. The first mirror (120) is substantially reflective at the second wavelength and includes a first multilayer stack. The second mirror (160) is substantially transmissive at the first wavelength and partially reflective and partially transmissive and the second wavelength. The second mirror includes a second multilayer stack. The VCSEL further includes a semiconductor multilayer stack (130) that is disposed between the first and second mirrors and converts at least a portion of the first wavelength light to the second wavelength light. The semiconductor multilayer stack (130) includes a quantum well that includes a Cd(Mg)ZnSe alloy.
摘要翻译：公开了光源。所公开的光源包括包含氮并发射第一波长的光的基于III-V的泵浦光源（170）。光源还包括垂直腔表面发射激光器（VCSEL），其将由泵浦光源（170）发射的第一波长光（174）的至少一部分转换成第二波长的至少部分相干光（176 ）。 VCSEL包括为第二波长的光形成光腔的第一和第二反射镜（120,160）。第一反射镜（120）在第二波长处基本上是反射性的并且包括第一多层叠层。第二反射镜（160）在第一波长处基本上是透射的，并且在第二波长处是部分反射和部分透射的。第二反射镜包括第二多层叠层。 VCSEL还包括设置在第一和第二反射镜之间并将第一波长光的至少一部分转换成第二波长光的半导体多层堆叠（130）。半导体多层堆叠（130）包括包含Cd（Mg）ZnSe合金的量子阱。

15. 发明申请

US20130075774A1 Light Converting And Emitting Device With Minimal Edge Recombination 有权
标题翻译：具有最小边缘重组的光转换和发射装置
公开(公告)号：US20130075774A1
公开(公告)日：2013-03-28
申请号：US13701065
申请日：2011-05-25
申请人： Michael A. Haase , Junqing Xie , Thomas J. Miller , Terry L. Smith
发明人： Michael A. Haase , Junqing Xie , Thomas J. Miller , Terry L. Smith
IPC分类号： H01L33/36 , H01L33/00
CPC分类号： H01L33/36 , H01L33/005 , H01L33/50
摘要： Light emitting system (100), particularly, light emitting systems that utilize semiconductor wavelength converting regions (104), and methods of producing such systems are disclosed. The light emitting systems and methods of producing such systems seek to frustrate recombination of free carriers that are associated with wavelength converting regions.
摘要翻译：公开了发光系统（100），特别是利用半导体波长转换区域（104）的发光系统以及制造这种系统的方法。产生这种系统的发光系统和方法试图阻止与波长转换区域相关联的游离载体的重组。

16. 发明申请

US20120037957A1 SEMICONDUCTOR DEVICES GROWN ON INDIUM-CONTAINING SUBSTRATES UTILIZING INDIUM DEPLETION MECHANISMS 有权
标题翻译：使用印刷机构的含有底物的底物上的半导体器件
公开(公告)号：US20120037957A1
公开(公告)日：2012-02-16
申请号：US13264509
申请日：2010-04-30
申请人： Thomas J. Miller , Michael A. Haase , Xiaoguang Sun
发明人： Thomas J. Miller , Michael A. Haase , Xiaoguang Sun
IPC分类号： H01L29/06 , H01L29/22
CPC分类号： H01L33/0087 , H01L21/02392 , H01L21/02463 , H01L21/02466 , H01L21/02469 , H01L21/0256 , H01L21/02568 , H01L21/02576 , H01L21/02631 , H01L33/08 , H01L33/28 , H01L33/502
摘要： We have observed anomalous behavior of II-VI semiconductor devices grown on certain semiconductor substrates, and have determined that the anomalous behavior is likely the result of indium atoms from the substrate migrating into the II-V layers during growth. The indium can thus become an unintended dopant in one or more of the II-VI layers grown on the substrate, particularly layers that are close to the growth substrate, and can detrimentally impact device performance. We describe a variety of semiconductor constructions and techniques effective to deplete the migrating indium within a short distance in the growth layers, or to substantially prevent indium from migrating out of the substrate, or to otherwise substantially isolate functional II-VI layers from the migrating indium, so as to maintain good device performance.
摘要翻译：我们已经观察到在某些半导体衬底上生长的II-VI半导体器件的异常行为，并且已经确定异常行为可能是在生长期间从衬底中的铟原子迁移到II-V层的结果。因此，铟可以成为在衬底上生长的一个或多个II-VI层中的非预期掺杂剂，特别是靠近生长衬底的层，并且可能不利地影响器件性能。我们描述了在生长层中短时间内有效去除迁移铟的各种半导体结构和技术，或者基本上防止铟从衬底迁移出来，或以其他方式实质上将功能性II-VI层与迁移铟，以保持良好的设备性能。

17. 发明申请

US20100155694A1 ADAPTING SHORT-WAVELENGTH LED'S FOR POLYCHROMATIC, BROADBAND, OR "WHITE" EMISSION 有权
标题翻译：适应短波长LED，用于多色，宽带或“白色”排放
公开(公告)号：US20100155694A1
公开(公告)日：2010-06-24
申请号：US12715957
申请日：2010-03-02
申请人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
发明人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
IPC分类号： H01L33/04
CPC分类号： H01L33/08 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/14 , H01L2224/05541 , H01L2224/05005
摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.
摘要翻译：提供了一种适配的LED，其包括短波长LED和再发射半导体结构，其中再发射半导体结构包括不位于pn结内的至少一个势阱。势阱通常是量子阱。适配的LED可以是白色或近白色的LED灯。再发射半导体结构可以另外包括围绕或紧密或紧邻势阱的吸收层。此外，提供了包括根据本发明的适配LED的图形显示装置和照明装置。

18. 发明申请

US20080272387A1 ADAPTING SHORT-WAVELENGTH LED'S FOR POLYCHROMATIC, BROADBAND, OR "WHITE" EMISSION 失效
标题翻译：适应短波长LED，用于多色，宽带或“白色”排放
公开(公告)号：US20080272387A1
公开(公告)日：2008-11-06
申请号：US12174087
申请日：2008-07-16
申请人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
发明人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/14 , H01L2224/05541 , H01L2224/05005
摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.
摘要翻译：提供了一种适配的LED，其包括短波长LED和再发射半导体结构，其中再发射半导体结构包括不位于pn结内的至少一个势阱。势阱通常是量子阱。适配的LED可以是白色或近白色的LED灯。再发射半导体结构可以另外包括围绕或紧密或紧邻势阱的吸收层。此外，提供了包括根据本发明的适配LED的图形显示装置和照明装置。

19. 发明申请

US20070284565A1 LED DEVICE WITH RE-EMITTING SEMICONDUCTOR CONSTRUCTION AND OPTICAL ELEMENT 审中-公开
标题翻译：具有再发射半导体结构和光学元件的LED器件
公开(公告)号：US20070284565A1
公开(公告)日：2007-12-13
申请号：US11761078
申请日：2007-06-11
申请人： Catherine A. Leatherdale , Andrew J. Ouderkirk , Michael A. Haase , Thomas J. Miller , Dong Lu
发明人： Catherine A. Leatherdale , Andrew J. Ouderkirk , Michael A. Haase , Thomas J. Miller , Dong Lu
IPC分类号： H01L29/06
CPC分类号： H01L33/08 , H01L33/44 , H01L33/502 , H01L33/58 , H01L33/60
摘要： A light source includes an LED component having an emitting surface, and an optical element having an input surface in optical contact with the emitting surface. The LED component may be or include an LED such as an LED die capable of emitting light at a first wavelength, in combination with a re-emitting semiconductor construction which includes a second potential well not located within a pn junction. The optical element can be an extractor whose shape is converging, diverging, or a combination thereof.
摘要翻译：光源包括具有发射表面的LED部件和具有与发射表面光学接触的输入表面的光学元件。 LED组件可以是或包括LED，例如能够发射第一波长的光的LED管芯，以及包括不位于pn结内的第二势阱的再发射半导体结构。光学元件可以是其形状会聚，发散或其组合的提取器。

20. 发明授权

US6058123A Selective etch for II-VI semiconductors 失效
标题翻译： II-VI半导体的选择性蚀刻
公开(公告)号：US6058123A
公开(公告)日：2000-05-02
申请号：US929221
申请日：1997-09-09
申请人： Michael A. Haase , Paul F. Baude , Thomas J. Miller
发明人： Michael A. Haase , Paul F. Baude , Thomas J. Miller
IPC分类号： H01L21/465 , H01S5/20 , H01S5/223 , H01S5/327 , H01S5/347 , H01S3/19
CPC分类号： B82Y20/00 , H01L21/465 , H01S5/327 , H01S5/209 , H01S5/2231 , H01S5/347
摘要： A II-VI semiconductor device is fabricated using a selective etchant in the form of aqueous solution of HX where X is Cl or Br. The II-VI semiconductor device is composed of a number of layers. Selective etching can be enabled by introducing Mg into one of the semiconductor layers. The resultant device may include a semiconductor layer containing Mg.
摘要翻译：使用HX的水溶液形式的选择性蚀刻剂制造II-VI半导体器件，其中X是Cl或Br。 II-VI半导体器件由多层构成。可以通过将Mg引入到半导体层之一来实现选择性蚀刻。所得到的器件可以包括含Mg的半导体层。

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