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    • 13. 发明授权
    • Type II broadband or polychromatic LED's
    • II型宽带或多色LED
    • US07719015B2
    • 2010-05-18
    • US11009218
    • 2004-12-09
    • Thomas J. MillerMichael A. Haase
    • Thomas J. MillerMichael A. Haase
    • H01L33/00
    • H01L33/06H01L33/08H01L33/28
    • An LED is provided comprising two or more light-emitting Type II interfaces wherein at least two of the Type II interfaces differ in transition energy by at least 5%, or more typically by at least 10%, and wherein at least one of the Type II interfaces is within a pn junction. Alternately, an LED is provided comprising two or more light-emitting Type II interfaces wherein at least two of the Type II interfaces differ in transition energy by at least 5%, or more typically by at least 10%. The Type II interfaces may include interfaces from a layer which is an electron quantum well and not a hole quantum well, interfaces to a layer which is a hole quantum well and not an electron quantum well; and interfaces that satisfy both conditions simultaneously. The Type II interfaces may be within a pn or pin junction or not within a pn or pin junction. In the later case, emission from the Type II interfaces may be photopumped by a nearby light source. The LED may be a white or near-white light LED. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided.
    • 提供包括两个或更多个发光II型界面的LED,其中II型界面中的至少两个界面的转换能量不同于至少5%,或更通常至少10%,并且其中至少一种类型 II接口位于pn结内。 或者,提供包括两个或更多个发光II型界面的LED,其中至少两个II型界面的跃迁能量不同于至少5%,或更通常至少10%。 II型界面可以包括来自作为电子量子阱而不是空穴量子阱的层的界面,其与作为空穴量子阱而不是电子量子阱的层接合; 和同时满足两个条件的接口。 II型接口可以在pn或pin结内,或者不在pn或pin结内。 在后一种情况下,II型接口的发射可能被附近的光源照射。 LED可以是白色或近白色的LED灯。 此外,提供了包括根据本发明的半导体器件的图形显示装置和照明装置。
    • 14. 发明授权
    • II-VI MQW VSEL on a heat sink optically pumped by a GaN LD
    • II-VI MQW VSEL在由GaN LD光学泵浦的散热器上
    • US08488641B2
    • 2013-07-16
    • US13060554
    • 2009-08-18
    • Michael A. HaaseThomas J. MillerXiaoguang Sun
    • Michael A. HaaseThomas J. MillerXiaoguang Sun
    • H01S3/14H01S5/00
    • H01S5/041B82Y20/00H01S5/0215H01S5/0217H01S5/024H01S5/1039H01S5/14H01S5/18308H01S5/2009H01S5/2022H01S5/2027H01S5/309H01S5/347H01S5/423H01S2301/18
    • Light sources are disclosed. A disclosed light source includes a III-V based pump light source (170) that includes nitrogen and emits light at a first wavelength. The light source further includes a vertical cavity surface emitting laser (VCSEL) that converts at least a portion of the first wavelength light (174) emitted by the pump light source (170) to at least a partially coherent light at a second wavelength (176). The VCSEL includes first and second mirrors (120, 160) that form an optical cavity for light at the second wavelength. The first mirror (120) is substantially reflective at the second wavelength and includes a first multilayer stack. The second mirror (160) is substantially transmissive at the first wavelength and partially reflective and partially transmissive and the second wavelength. The second mirror includes a second multilayer stack. The VCSEL further includes a semiconductor multilayer stack (130) that is disposed between the first and second mirrors and converts at least a portion of the first wavelength light to the second wavelength light. The semiconductor multilayer stack (130) includes a quantum well that includes a Cd(Mg)ZnSe alloy.
    • 公开了光源。 所公开的光源包括包含氮并发射第一波长的光的基于III-V的泵浦光源(170)。 光源还包括垂直腔表面发射激光器(VCSEL),其将由泵浦光源(170)发射的第一波长光(174)的至少一部分转换成第二波长的至少部分相干光(176 )。 VCSEL包括为第二波长的光形成光腔的第一和第二反射镜(120,160)。 第一反射镜(120)在第二波长处基本上是反射性的并且包括第一多层叠层。 第二反射镜(160)在第一波长处基本上是透射的,并且在第二波长处是部分反射和部分透射的。 第二反射镜包括第二多层叠层。 VCSEL还包括设置在第一和第二反射镜之间并将第一波长光的至少一部分转换成第二波长光的半导体多层堆叠(130)。 半导体多层堆叠(130)包括包含Cd(Mg)ZnSe合金的量子阱。