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11. 发明授权

US07224420B2 Thin-film transistor array substrate 有权
公开(公告)号：US07224420B2
公开(公告)日：2007-05-29
申请号：US11163726
申请日：2005-10-28
申请人： Fang-Chen Luo
发明人： Fang-Chen Luo
IPC分类号： G02F1/1368 , G02F1/1343
CPC分类号： G02F1/13624 , G02F1/133555 , G02F1/1368 , G02F2001/134345
摘要： A thin-film transistor array substrate, used in a transflective liquid crystal display. The thin-film transistor array substrate has a substrate, a plurality of pixels, a plurality of scan lines and a plurality of data lines. Each of the pixels has a transparent sub-pixel and a reflective sub-pixel, while the transparent sub-pixel further has a transparent electrode and a first thin-film transistor, and the reflective sub-pixel has a reflective pixel electrode and a second thin-film transistor. The pixel electrode of each sub-pixel is thus electrically connected to a different thin-film transistor. The step of forming a molybdenum layer is thus not required, saving fabrication cost.

12. 发明申请

US20050007524A1 Flat panel display with a non-matrix light shielding structure 有权
标题翻译：具有非矩阵遮光结构的平板显示器
公开(公告)号：US20050007524A1
公开(公告)日：2005-01-13
申请号：US10615170
申请日：2003-07-07
申请人： Fang-Chen Luo , Kuen-Wen Hu
发明人： Fang-Chen Luo , Kuen-Wen Hu
IPC分类号： G02B5/20 , G02F1/13 , G02F1/133 , G02F1/1333 , G02F1/1335 , G02F1/1362 , G02F1/1368 , G09F9/30
CPC分类号： G02F1/136209 , G02F1/133512
摘要： A flat panel display with a non-matrix shielding structure. The non-matrix shielding structure comprises a main shielding structure which has gaps and main spacings substantially corresponding to the pixel regions, and complementary shielding structures corresponding to the gaps. Each gap substantially corresponds to the scan line or signal line. Each main spacing is connected to at least one of the gaps, and each gap is connected to two adjacent main spacings.
摘要翻译：具有非矩阵屏蔽结构的平板显示器。非矩阵屏蔽结构包括主屏蔽结构，其具有基本上对应于像素区的间隙和主间隔，以及对应于间隙的互补屏蔽结构。每个间隙基本上对应于扫描线或信号线。每个主间隔连接到至少一个间隙，并且每个间隙连接到两个相邻的主间距。

13. 发明授权

US06597015B2 Method of fabricating thin-film transistor 有权
公开(公告)号：US06597015B2
公开(公告)日：2003-07-22
申请号：US10154603
申请日：2002-05-22
申请人： Chien-Sheng Yang , Fang-Chen Luo
发明人： Chien-Sheng Yang , Fang-Chen Luo
IPC分类号： H01L2100
CPC分类号： H01L27/1288 , G02F1/1368 , H01L27/1214 , H01L27/3244 , H01L29/41733 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/66765
摘要： A method of fabricating a thin-film transistor on an insulation substrate. A first conductive layer, a gate dielectric layer, a silicon layer and a doped silicon layer are formed on the insulation substrate. These four layers are patterned to form a gate and a gate line. A second conductive layer is formed over the insulation substrate. The second conductive layer and the doped silicon layer are patterned to form a source/drain region, a source/drain conductive layer and a source/drain line on both sides of the gate line. A protection layer is formed over the insulation layer, followed by a patterning step to form openings on the source/drain conductive layer and the source/drain line. A transparent conductive layer is formed on the protection layer and in the openings. After being patterned, a pixel electrode is formed, and a portion of the transparent conductive layer remains to electrically connect the source/drain line and the source/drain conductive layer. The method of fabricating the thin-film transistor can be applied to fabrication of fax machine, CIS such as scanner and various electronic devices. It can also be applied to fabrication of normal thin-film transistor flat panel display such as liquid crystal display (LCD) and organic light emitting diode (OLED).

14. 发明授权

US4149885A Method of making electroluminescent display panel with enlarged active display areas 失效
标题翻译：制造具有增大的活动显示区域的电致发光显示面板的方法
公开(公告)号：US4149885A
公开(公告)日：1979-04-17
申请号：US734942
申请日：1976-10-22
申请人： Fang-Chen Luo , Thomas P. Brody , David H. Davies
发明人： Fang-Chen Luo , Thomas P. Brody , David H. Davies
IPC分类号： G09F13/22 , G09G3/30 , H04N3/12 , H04N3/14 , H05B33/06 , B05D5/06 , B05D5/12 , H01J9/22
CPC分类号： H04N3/14 , H04N3/12 , H05B33/06
摘要： An improved electroluminescent display panel having an X-Y array of display elements upon a planar insulating substrate. Integral thin film transistor circuit elements and drive signal buses are interconnected on the panel with individual electroluminescent electrodes covering a large area of the panel to increase the active display area. The electroluminescent electrode is a multilevel electrode with a first level portion disposed on the insulated substrate, a second level electrode portion disposed over an insulative polymerized layer which covers the thin film circuit areas and the drive signal buses, and a connecting electrode portion which extends between the first and second level electrode portions.
摘要翻译：一种在平面绝缘衬底上具有显示元件的X-Y阵列的改进的电致发光显示面板。整体薄膜晶体管电路元件和驱动信号总线在面板上互连，单独的电致发光电极覆盖面板的大面积以增加主动显示区域。电致发光电极是具有设置在绝缘基板上的第一电平部分的多电极电极，设置在覆盖薄膜电路区域的绝缘聚合层和驱动信号总线上的第二电平电极部分，以及连接电极部分，第一和第二电极部分。

15. 发明授权

US08222095B2 Method for fabricating thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US08222095B2
公开(公告)日：2012-07-17
申请号：US12258451
申请日：2008-10-27
申请人： Fang-Chen Luo , Shuo-Wei Liang , Shin-Chuan Chiang , Chao-Nan Chen , Chin-Chih Yu
发明人： Fang-Chen Luo , Shuo-Wei Liang , Shin-Chuan Chiang , Chao-Nan Chen , Chin-Chih Yu
IPC分类号： H01L21/00
CPC分类号： H01L29/7869
摘要： A method for fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulating layer is formed on the substrate to cover the gate. A metal oxide material layer is formed on the gate insulating layer. A photoresist layer is formed on the metal oxide material layer, in which a thickness of the photoresist layer above the gate is larger than that of the photoresist layer above two sides adjacent to the gate. A portion of the metal oxide material layer is removed to form a metal oxide active layer by using the photoresist layer as a mask. The photoresist layer above the two sides adjacent to the gate is removed and the remaining photoresist layer covers a portion of the metal oxide active layer. A source and a drain are formed on the metal oxide active layer covered by the photoresist layer.
摘要翻译：提供一种制造薄膜晶体管的方法。栅极形成在基板上。在基板上形成栅极绝缘层以覆盖栅极。在栅极绝缘层上形成金属氧化物材料层。在金属氧化物材料层上形成光致抗蚀剂层，其中栅极上方的光致抗蚀剂层的厚度大于与栅极相邻的两侧上方的光致抗蚀剂层的厚度。通过使用光致抗蚀剂层作为掩模，去除金属氧化物材料层的一部分以形成金属氧化物活性层。去除与栅极相邻的两侧上方的光致抗蚀剂层，剩余的光致抗蚀剂层覆盖金属氧化物活性层的一部分。在由光致抗蚀剂层覆盖的金属氧化物有源层上形成源极和漏极。

16. 发明授权

US08184219B2 Stacked storage capacitor-on-gate structure for a thin film transistor liquid crystal display 有权
标题翻译：用于薄膜晶体管液晶显示器的堆叠存储电容器栅极结构
公开(公告)号：US08184219B2
公开(公告)日：2012-05-22
申请号：US12150132
申请日：2008-04-24
申请人： Fang-Chen Luo , Chang-Cheng Lo
发明人： Fang-Chen Luo , Chang-Cheng Lo
IPC分类号： G02F1/1343 , G02F1/1333
CPC分类号： G02F1/136213 , H01L27/12
摘要： A stacked storage capacitor structure for use in each pixel of a TFT-LCD, wherein a first storage capacitor is formed by a first metal layer, a gate insulator layer and a second metal layer. The second capacitor is formed by the second metal layer, a passivation insulator layer and an ITO layer. The first metal layer and the ITO layer are joined together through a via hole which is etched in one insulator etching step during the overall fabrication process through both the gate insulator and the passivation insulator layers. As such, the two capacitors are connected in parallel in a stacked configuration. With the stacked storage capacitor structure, the charge storage capacity is increased without significantly affecting the aperture ratio of a pixel. The ITO and the pixel electrode can be different parts of an indium tine oxide layer deposited on the passivation insulator layer.
摘要翻译：一种用于TFT-LCD的每个像素的堆叠存储电容器结构，其中第一存储电容器由第一金属层，栅极绝缘体层和第二金属层形成。第二电容器由第二金属层，钝化绝缘体层和ITO层形成。第一金属层和ITO层通过在通过栅极绝缘体和钝化绝缘体层的整个制造工艺中的一个绝缘体蚀刻步骤中被蚀刻的通孔而接合在一起。这样，两个电容器以堆叠的方式并联连接。利用堆叠的存储电容器结构，电荷存储容量增加而不显着影响像素的开口率。 ITO和像素电极可以是沉积在钝化绝缘体层上的铟氧化物层的不同部分。

17. 发明授权

US07675582B2 Stacked storage capacitor structure for a thin film transistor liquid crystal display 有权
标题翻译：用于薄膜晶体管液晶显示器的堆叠存储电容器结构
公开(公告)号：US07675582B2
公开(公告)日：2010-03-09
申请号：US11004389
申请日：2004-12-03
申请人： Fang-Chen Luo , Chang-Cheng Lo
发明人： Fang-Chen Luo , Chang-Cheng Lo
IPC分类号： G02F1/1343 , G02F1/13
CPC分类号： G02F1/136213 , H01L27/12
摘要： A stacked storage capacitor structure for use in each pixel of a TFT-LCD, wherein a first storage capacitor is formed by a first metal layer, a gate insulator layer and a second metal layer. The second capacitor is formed by the second metal layer, a passivation insulator layer and an ITO layer. The first metal layer and the ITO layer are joined together through a via hole which is etched in one insulator etching step during the overall fabrication process through both the gate insulator and the passivation insulator layers. As such, the two capacitors are connected in parallel in a stacked configuration. With the stacked storage capacitor structure, the charge storage capacity is increased without significantly affecting the aperture ratio of a pixel. The ITO and the pixel electrode can be different parts of an indium tine oxide layer deposited on the passivation insulator layer.
摘要翻译：一种用于TFT-LCD的每个像素的堆叠存储电容器结构，其中第一存储电容器由第一金属层，栅极绝缘体层和第二金属层形成。第二电容器由第二金属层，钝化绝缘体层和ITO层形成。第一金属层和ITO层通过在通过栅极绝缘体和钝化绝缘体层的整个制造工艺中的一个绝缘体蚀刻步骤中被蚀刻的通孔而接合在一起。这样，两个电容器以堆叠的方式并联连接。利用堆叠的存储电容器结构，电荷存储容量增加而不显着影响像素的开口率。 ITO和像素电极可以是沉积在钝化绝缘体层上的铟氧化物层的不同部分。

18. 发明申请

US20060038942A1 THIN-FILM TRANSISTOR ARRAY SUBSTRATE 有权
公开(公告)号：US20060038942A1
公开(公告)日：2006-02-23
申请号：US11163725
申请日：2005-10-28
申请人： Fang-Chen Luo
发明人： Fang-Chen Luo
IPC分类号： G02F1/1335
CPC分类号： G02F1/13624 , G02F1/133555 , G02F1/1368 , G02F2001/134345
摘要： A thin-film transistor array substrate, used in a transflective liquid crystal display. The thin-film transistor array substrate has a substrate, a plurality of pixels, a plurality of scan lines and a plurality of data lines. Each of the pixels has a transparent sub-pixel and a reflective sub-pixel, while the transparent sub-pixel further has a transparent electrode and a first thin-film transistor, and the reflective sub-pixel has a reflective pixel electrode and a second thin-film transistor. The pixel electrode of each sub-pixel is thus electrically connected to a different thin-film transistor. The step of forming a molybdenum layer is thus not required, saving fabrication cost.

19. 发明申请

US20060038941A1 THIN-FILM TRANSISTOR ARRAY SUBSTRATE 有权
公开(公告)号：US20060038941A1
公开(公告)日：2006-02-23
申请号：US11163724
申请日：2005-10-28
申请人： Fang-Chen Luo
发明人： Fang-Chen Luo
IPC分类号： G02F1/1335
CPC分类号： G02F1/13624 , G02F1/133555 , G02F1/1368 , G02F2001/134345
摘要： A thin-film transistor array substrate, used in a transflective liquid crystal display. The thin-film transistor array substrate has a substrate, a plurality of pixels, a plurality of scan lines and a plurality of data lines. Each of the pixels has a transparent sub-pixel and a reflective sub-pixel, while the transparent sub-pixel further has a transparent electrode and a first thin-film transistor, and the reflective sub-pixel has a reflective pixel electrode and a second thin-film transistor. The pixel electrode of each sub-pixel is thus electrically connected to a different thin-film transistor. The step of forming a molybdenum layer is thus not required, saving fabrication cost.

20. 发明授权

US4006383A Electroluminescent display panel with enlarged active display areas 失效
标题翻译：电致发光显示面板具有放大的活动显示区域
公开(公告)号：US4006383A
公开(公告)日：1977-02-01
申请号：US636281
申请日：1975-11-28
申请人： Fang-Chen Luo , Thomas P. Brody , David H. Davies
发明人： Fang-Chen Luo , Thomas P. Brody , David H. Davies
IPC分类号： G09F13/22 , G09G3/30 , H04N3/12 , H04N3/14 , H05B33/06 , H05B33/02
CPC分类号： H04N3/14 , H04N3/12 , H05B33/06
摘要： An improved electroluminescent display panel having an X-Y array of display elements upon a planar insulating substrate. Integral thin film transistor circuit elements and drive signal buses are interconnected on the panel with individual electroluminescent electrodes covering a large area of the panel to increase the active display area. The electroluminescent electrode is a multilevel electrode with a first level portion disposed on the insulated substrate, a second level electrode portion disposed over an insulative polymerized layer which covers the thin film circuit areas and the drive signal buses, and a connecting electrode portion which extends between the first and second level electrode portions.
摘要翻译：一种在平面绝缘衬底上具有显示元件的X-Y阵列的改进的电致发光显示面板。整体薄膜晶体管电路元件和驱动信号总线在面板上互连，单独的电致发光电极覆盖面板的大面积以增加主动显示区域。电致发光电极是具有设置在绝缘基板上的第一电平部分的多电极电极，设置在覆盖薄膜电路区域的绝缘聚合层和驱动信号总线上的第二电平电极部分，以及连接电极部分，第一和第二电极部分。

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