专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20060181338A1 Stacked CMOS current mirror using MOSFETs having different threshold voltages 审中-公开
标题翻译：使用具有不同阈值电压的MOSFET的叠层CMOS电流镜
公开(公告)号：US20060181338A1
公开(公告)日：2006-08-17
申请号：US11354944
申请日：2006-02-16
申请人： Jeongwook Koh , Chun-deok Suh
发明人： Jeongwook Koh , Chun-deok Suh
IPC分类号： G05F1/10
CPC分类号： G05F3/262
摘要： A stacked CMOS current mirror using metal oxide semiconductor field effect transistors (MOSFETs) having different threshold voltages is disclosed. The stacked CMOS current mirror includes a first MOSFET having a source and a gate which are connected to a first input current terminal, a second MOSFET having a source connected to a drain of the first MOSFET, a gate connected to the gate of the first MOSFET, and a drain connected to ground, a third MOSFET having a drain connected to a second input current terminal and a gate connected to the source and the gate of the first MOSFET, and a fourth MOSFET having a drain connected to a source of the third MOSFET, a gate connected to the source and the gate of the first MOSFET, and a source connected to the ground.
摘要翻译：公开了使用具有不同阈值电压的金属氧化物半导体场效应晶体管（MOSFET）的叠层CMOS电流镜。堆叠的CMOS电流镜包括具有连接到第一输入电流端子的源极和栅极的第一MOSFET，具有连接到第一MOSFET的漏极的源极的第二MOSFET，连接到第一MOSFET的栅极的栅极以及与地相连的漏极，具有连接到第二输入电流端子的漏极和连接到第一MOSFET的源极和栅极的栅极的第三MOSFET和具有连接到第三MOSFET源极的漏极的第四MOSFET MOSFET，连接到源极和第一MOSFET的栅极的栅极，以及连接到地的源极。

12. 发明授权

US07145407B2 Radio frequency voltage controlled oscillator 失效
标题翻译：射频压控振荡器
公开(公告)号：US07145407B2
公开(公告)日：2006-12-05
申请号：US10945906
申请日：2004-09-22
申请人： Sang-yoon Jeon , Heung-bae Lee , Chun-deok Suh
发明人： Sang-yoon Jeon , Heung-bae Lee , Chun-deok Suh
IPC分类号： H03B12/00
CPC分类号： H03K3/354 , H03B5/1215 , H03B5/1228 , H03B5/1253
摘要： A radio frequency voltage controlled oscillator (RF VCO) includes a differential oscillator including two field effect transistors (FETs) in which an electric current flows laterally to a substrate and a current source including a bipolar transistor in which the electric current flows in a direction either perpendicular or lateral to the substrate from an emitter to a collector via a base. Therefore, 1/f noise is very small. Resultantly, the RF VCO using the bipolar junction transistor as the current source reduces the 1/f noise generated by the current source of a RF CMOS VCO and, ultimately, the phase noise of the VCO.
摘要翻译：射频压控振荡器（RF VCO）包括差分振荡器，该差分振荡器包括两个场效应晶体管（FET），其中电流横向流向衬底，以及电流源包括双极晶体管，其中电流沿着通过基底从发射极垂直或侧向于基底。因此，1 / f噪声非常小。结果，使用双极结晶体管作为电流源的RF VCO降低了由RF CMOS VCO的电流源产生的1 / f噪声，并最终降低了VCO的相位噪声。

13. 发明申请

US20060186961A1 Variable gain differential amplifier, and variable degeneration impedance control device and method for use in the same 失效
标题翻译：可变增益差分放大器和可变退化阻抗控制装置及其使用方法
公开(公告)号：US20060186961A1
公开(公告)日：2006-08-24
申请号：US11349171
申请日：2006-02-08
申请人： Chun-deok Suh , Hoon-tae Kim , Jung-eun Lee
发明人： Chun-deok Suh , Hoon-tae Kim , Jung-eun Lee
IPC分类号： H03G3/12
CPC分类号： H03G1/0029
摘要： Disclosed are a variable gain differential amplifier, and variable degeneration impedance control device and method for use in the variable gain differential amplifier, which can adjust an amplification gain and ensure linearity. A DC level of a differential signal to be amplified by the amplifier is adjusted according to a control signal to adjust a gain of the amplifier, and the impedance of a variable degeneration impedance part is adjusted according to the differential signal of which the DC level is adjusted. That is, the gain of the differential amplifier is adjusted and the linearity is ensured by varying the impedance of the variable degeneration impedance part using the differential input signal of which the DC level is adjusted.
摘要翻译：本发明公开了一种可变增益差分放大器和可变衰减阻抗控制装置及其在可变增益差分放大器中的应用，可以调节放大增益并确保线性度。根据控制信号调整由放大器放大的差分信号的直流电平，以调整放大器的增益，并且根据直流电平的差分信号来调节可变衰减阻抗部分的阻抗调整。也就是说，通过使用调整DC电平的差分输入信号改变可变衰减阻抗部分的阻抗来调节差分放大器的增益，并确保线性度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式