专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20060060880A1 Nitride semiconductor light emitting device having electrostatic discharge(ESD) protection capacity 有权
标题翻译：氮化物半导体发光器件具有静电放电（ESD）保护能力
公开(公告)号：US20060060880A1
公开(公告)日：2006-03-23
申请号：US11053906
申请日：2005-02-10
申请人： Kyu Lee , Hyun Kim , Je Kim , Dong Kim
发明人： Kyu Lee , Hyun Kim , Je Kim , Dong Kim
IPC分类号： H01L29/22
CPC分类号： H01L27/15 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A nitride semiconductor light emitting device including a light emitting diode and a diode formed on a single substrate, in which the light emitting diode and the diode use a common electrode. According to the present invention, an active layer and a p-type nitride semiconductor layer are each divided into a first region and a second region by an insulative isolation layer, and an ohmic contact layer is formed on the p-type nitride semiconductor layer contained in the first region. A p-type electrode is formed on the ohmic contact layer and is extended to the p-type nitride semiconductor layer contained in the second region. An n-type electrode is formed on the p-type nitride semiconductor layer contained in the second region, passes through the p-type nitride semiconductor layer and the active layer contained in the second region, and is connected to the first n-type nitride semiconductor layer.
摘要翻译：一种氮化物半导体发光器件，包括在单个衬底上形成的发光二极管和二极管，其中发光二极管和二极管使用公共电极。根据本发明，通过绝缘隔离层将有源层和p型氮化物半导体层分别分成第一区域和第二区域，在包含的p型氮化物半导体层上形成欧姆接触层在第一个地区。在欧姆接触层上形成p型电极，并延伸到包含在第二区域中的p型氮化物半导体层。在包含在第二区域的p型氮化物半导体层上形成n型电极，穿过p型氮化物半导体层和包含在第二区域中的有源层，并连接到第一n型氮化物半导体层。

12. 发明申请

US20070104984A1 Method for controlling peripheral system and fuel cell system using the same 有权
标题翻译：用于控制外围系统和使用其的燃料电池系统的方法
公开(公告)号：US20070104984A1
公开(公告)日：2007-05-10
申请号：US11585755
申请日：2006-10-23
申请人： Jin An , Hyun Kim , Ri Ju , Dong Kim
发明人： Jin An , Hyun Kim , Ri Ju , Dong Kim
IPC分类号： H01M8/04
CPC分类号： H01M16/003 , H01M8/04097 , H01M8/04126 , H01M8/04164 , H01M8/04194 , H01M8/04223 , H01M8/04225 , H01M8/04302 , H01M8/04447 , H01M8/04604 , H01M8/04955 , H01M8/04992 , H01M8/1011 , Y02E60/523 , Y02P90/40
摘要： A method for controlling a peripheral system (or a plurality of peripheral devices) and a fuel cell system using the same. The method includes: allocating an operation priority to the peripheral devices; storing information of the operation priority; and sequentially operating the peripheral devices by using electric energy stored in a small capacity electricity storage device according to the operation priority. The fuel cell system includes: the plurality of peripheral devices; an electricity storage device electrically connected with the peripheral devices; and a controller for sequentially operating the peripheral devices by using electric energy stored in the electricity storage device according to an operation priority.
摘要翻译：一种用于控制外围系统（或多个外围设备）的方法和使用其的燃料电池系统。该方法包括：向外围设备分配操作优先级; 存储操作优先级的信息; 并且通过使用存储在小容量蓄电装置中的电能依次操作外围装置。燃料电池系统包括：多个外围设备; 与外围设备电连接的蓄电装置; 以及控制器，用于根据操作优先级通过使用存储在蓄电装置中的电能顺序地操作外围设备。

13. 发明申请

US20070080353A1 Nitride-based semiconductor light emitting diode and method of manufacturing the same 有权
标题翻译：氮化物半导体发光二极管及其制造方法
公开(公告)号：US20070080353A1
公开(公告)日：2007-04-12
申请号：US11543798
申请日：2006-10-06
申请人： Hyuk Lee , Hyun Kim , Dong Kim , Hyoun Shin
发明人： Hyuk Lee , Hyun Kim , Dong Kim , Hyoun Shin
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.
摘要翻译：氮化物系半导体LED包括：基板; 在该基板上形成的n型氮化物半导体层; 依次形成在n型氮化物半导体层的预定区域上的有源层和p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在所述透明电极上的p电极焊盘，所述p电极焊盘与所述p型氮化物半导体层的外缘线隔开50〜200μm; 以及形成在n型氮化物半导体层上的n电极焊盘。

14. 发明申请

US20050269588A1 Flip chip type nitride semiconductor light-emitting diode 有权
标题翻译：倒装芯片型氮化物半导体发光二极管
公开(公告)号：US20050269588A1
公开(公告)日：2005-12-08
申请号：US10925934
申请日：2004-08-26
申请人： Dong Kim , Hyun Kim
发明人： Dong Kim , Hyun Kim
IPC分类号： H01L21/00 , H01L33/06 , H01L33/10 , H01L33/32 , H01L33/36 , H01L33/62 , H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/387 , H01L33/44
摘要： The present invention provides a flip chip type nitride semiconductor light-emitting diode comprising a light-transmissive substrate for growing nitride single crystals; an n-type nitride semiconductor layer formed on the light-transmissive substrate; an active layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a mesh-type dielectric layer formed on the p-type nitride semiconductor layer and having a mesh structure with a plurality of open regions in which the p-type nitride semiconductor layer is exposed; a highly reflective ohmic contact layer formed on the mesh-type dielectric layer and the open regions in which the p-type nitride semiconductor layer is exposed; and a p-bonding electrode and an n-electrode formed on the highly reflective ohmic contact layer and the n-type nitride semiconductor layer, respectively.
摘要翻译：本发明提供一种倒装芯片型氮化物半导体发光二极管，其包括用于生长氮化物单晶的透光基板; 形成在所述透光性基板上的n型氮化物半导体层; 形成在所述n型氮化物半导体层上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在所述p型氮化物半导体层上并且具有其中露出所述p型氮化物半导体层的多个开放区域的网状结构的网状电介质层; 形成在网状介电层上的高反射欧姆接触层和露出p型氮化物半导体层的开放区域; 以及分别形成在高反射欧姆接触层和n型氮化物半导体层上的p型接合电极和n电极。

15. 发明申请

US20130030622A1 SYSTEM AND METHOD FOR MANAGING WASTE HEAT OF ELECTRIC VEHICLE 有权
标题翻译：用于管理电动车废气的系统和方法
公开(公告)号：US20130030622A1
公开(公告)日：2013-01-31
申请号：US13315897
申请日：2011-12-09
申请人： Hee Sang Park , Hyun Kim , June Kyu Park , Jun Mo Ku , Moo Yong Kim , Soon Jong Lee , Tae Wan Kim
发明人： Hee Sang Park , Hyun Kim , June Kyu Park , Jun Mo Ku , Moo Yong Kim , Soon Jong Lee , Tae Wan Kim
IPC分类号： B60H1/32 , G06F7/00 , F28F27/00
CPC分类号： B60K6/46 , B60H1/143 , B60L1/003 , B60L1/02 , B60L11/1874 , B60L11/1892 , B60L2240/34 , B60L2240/36 , B60L2240/425 , B60L2240/545 , Y02T10/6217 , Y02T10/642 , Y02T10/705 , Y02T90/34
摘要： Disclosed herein is a waste heat management system of an electric vehicle. In particular, a pump for controlling the flow of cooling fluid, an OBC cooling fluid line and a motor cooling fluid line which diverge in parallel from an outlet of a cooling fluid line of the fluid pump, and a heater core cooling fluid line and a radiator cooling fluid line which are respectively connected in parallel with a junction of an inlet of the fluid pump cooling fluid line and a junction of outlets of the heater core cooling fluid line and the radiator cooling fluid line, are interconnected to provide both heating and air-conditioning to the interior of the vehicle. Additionally, the present invention, also allows the motor to be preheated when the vehicle is not running.
摘要翻译：这里公开了一种电动车辆的废热管理系统。特别地，用于控制冷却流体的流动的泵，OBC冷却流体管线和从流体泵的冷却流体管线的出口平行散开的马达冷却流体管线，以及加热器芯冷却流体管线和分别与流体泵冷却流体管线的入口和加热器芯冷却流体管线和散热器冷却流体管线的出口的连接点并联连接的散热器冷却流体管线互连，以提供加热和空气 - 调节车辆内部。此外，本发明还允许当车辆不运行时电动机被预热。

16. 发明申请

US20060199167A1 User interface design and evaluation system and hand interaction based user interface design and evaluation system 有权
标题翻译：用户界面设计和评估系统以及基于手动交互的用户界面设计和评估系统
公开(公告)号：US20060199167A1
公开(公告)日：2006-09-07
申请号：US11293965
申请日：2005-12-05
申请人： Ung Yang , Yong Kim , Wook Son , Hyun Kim
发明人： Ung Yang , Yong Kim , Wook Son , Hyun Kim
IPC分类号： G09B25/00
CPC分类号： G06F17/5009
摘要： A user interface design and evaluation system and a hand-interaction-based user interface design and evaluation system are provided. The user interface design and evaluation system includes: a user interface design unit, a human model interaction design unit, a user interface prototype simulation unit, a human model simulation unit, and a user interface evaluation unit. In order to develop a user interface in consideration of usability of a user, the system provides a usability evaluation feedback system performing optimization of an interface design based on a motion simulation of a body model and user interface model. Through this, an optimum interface design is derived and by reducing the initial usage difficulty of the new interface for a user, the user can easily use the new interface and work performance of the user can be enhanced. In addition, by supporting fast prototyping and evaluation in a new product development stage, efficient production of a product having a short life cycle can be actively implemented.
摘要翻译：提供了用户界面设计和评估系统以及基于手工交互的用户界面设计和评估系统。用户界面设计和评估系统包括：用户界面设计单元，人体模型交互设计单元，用户界面原型模拟单元，人机模拟单元和用户界面评估单元。为了开发用户界面，考虑到用户的可用性，系统提供了基于体模型和用户界面模型的运动模拟来执行接口设计优化的可用性评估反馈系统。通过这种方式，推出了最佳的界面设计，通过减少用户新界面的初始使用难度，用户可以轻松使用新界面，可以提高用户的工作性能。此外，通过在新产品开发阶段支持快速原型设计和评估，可以积极实施生命周期短的产品的高效生产。

17. 发明申请

US20060033113A1 Nitride semiconductor light emitting diode and method of manufacturing the same 审中-公开
标题翻译：氮化物半导体发光二极管及其制造方法
公开(公告)号：US20060033113A1
公开(公告)日：2006-02-16
申请号：US11064968
申请日：2005-02-25
申请人： Jae Lee , In Kim , Yong Kim , Hyun Kim , Moon Kong
发明人： Jae Lee , In Kim , Yong Kim , Hyun Kim , Moon Kong
IPC分类号： H01L33/00
CPC分类号： H01L33/387 , H01L33/32 , H01L33/405 , H01L33/46
摘要： The present invention provides a flip chip-type nitride semiconductor light emitting diode. The nitride semiconductor light emitting diode comprises a light transmittance substrate, an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer and a mesh-type DBR reflecting layer. The mesh-type DBR reflecting layer has a plurality of open regions. The mesh-type DBR reflecting layer is composed of first and second nitride layers having different Al content. The first and second nitride layers are alternately stacked several times to form the mesh-type DBR reflecting layer. An ohmic contact layer is formed on the mesh-type DBR reflecting layer and on the p-type nitride semiconductor layer.
摘要翻译：本发明提供一种倒装芯片型氮化物半导体发光二极管。氮化物半导体发光二极管包括透光性基板，n型氮化物半导体层，有源层，p型氮化物半导体层和网状DBR反射层。网状DBR反射层具有多个开放区域。网状DBR反射层由具有不同Al含量的第一和第二氮化物层组成。第一和第二氮化物层交替堆叠几次以形成网状DBR反射层。在网状DBR反射层和p型氮化物半导体层上形成欧姆接触层。

18. 发明申请

US20050221521A1 Nitride semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20050221521A1
公开(公告)日：2005-10-06
申请号：US10983637
申请日：2004-11-09
申请人： Jae Lee , Jeong Lee , Hyun Kim , Yong Kim
发明人： Jae Lee , Jeong Lee , Hyun Kim , Yong Kim
IPC分类号： H01L21/00 , H01L29/22 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/62 , H01L33/00
CPC分类号： H01L33/32 , H01L33/007 , H01L33/22 , Y10S257/918
摘要： Disclosed herein is a nitride semiconductor light emitting device having patterns formed on the upper and lower surfaces of a substrate from which light is emitted in a flip chip bonding structure wherein the patterns are capable of changing light inclination at the upper and lower surfaces of the substrate to decrease total reflection at the interfaces, thereby improving light emitting efficiency. The nitride semiconductor light emitting device comprises a substrate having upper and lower surfaces on which predetermined patterns are formed such that light can be incident within a critical angle, the substrate allowing a gallium nitride-based semiconductor material to be grown thereon, an n-type nitride semiconductor layer formed on the upper surface of the substrate, an active layer formed on the upper surface of the n-type nitride semiconductor layer such that the n-type nitride semiconductor layer is partially exposed, a p-type nitride semiconductor layer formed on the upper surface of the active layer, a p-electrode formed on the upper surface of the p-type nitride semiconductor layer, and an n-side electrode formed on the partially exposed n-type nitride semiconductor layer.
摘要翻译：本文公开了一种氮化物半导体发光器件，其具有形成在衬底的上表面和下表面上的图案，其中以倒装芯片接合结构发射光，其中图案能够改变衬底的上表面和下表面处的光倾斜度以减少界面处的全反射，从而提高发光效率。氮化物半导体发光器件包括具有上表面和下表面的衬底，在衬底上形成预定图案，使得光可以临界角入射，所述衬底允许在其上生长氮化镓基半导体材料，n型形成在所述衬底的上表面上的氮化物半导体层，形成在所述n型氮化物半导体层的上表面上以使得所述n型氮化物半导体层部分暴露的有源层，形成在所述n型氮化物半导体层上的p型氮化物半导体层有源层的上表面，形成在p型氮化物半导体层的上表面上的p电极和形成在部分暴露的n型氮化物半导体层上的n侧电极。

19. 发明申请

US20050156185A1 Flip chip nitride semiconductor light emitting diode 有权
标题翻译：倒装氮化硅半导体发光二极管
公开(公告)号：US20050156185A1
公开(公告)日：2005-07-21
申请号：US10867755
申请日：2004-06-16
申请人： Hyun Kim , Young Jeong , Yong Kim
发明人： Hyun Kim , Young Jeong , Yong Kim
IPC分类号： H01L33/06 , H01L33/10 , H01L33/32 , H01L33/38 , H01L33/46 , H01L33/62 , H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/387 , H01L33/44 , H01L2224/14 , Y10S257/918
摘要： The invention relates to a nitride semiconductor LED, wherein an n-doped nitride semiconductor layer is formed on a transparent substrate. An active layer is formed on the n-doped nitride semiconductor layer. A p-doped nitride semiconductor layer is formed on the active layer. A high reflectivity Ohmic contact layer of a mesh structure is formed on the p-doped nitride semiconductor layer and has a number of open areas for exposing the p-doped nitride semiconductor layer. A metal barrier layer is formed on at least a top region of the high reflectivity Ohmic contact layer. A p-bonding electrode is formed on the metal barrier layer. An n-electrode is formed on the n-doped nitride semiconductor layer.
摘要翻译：本发明涉及氮化物半导体LED，其中在透明衬底上形成n掺杂氮化物半导体层。在n掺杂氮化物半导体层上形成有源层。在有源层上形成p掺杂的氮化物半导体层。高反射率网状结构的欧姆接触层形成在p掺杂氮化物半导体层上，并且具有用于暴露p掺杂氮化物半导体层的多个开放区域。金属阻挡层形成在高反射率欧姆接触层的至少顶部区域上。在金属阻挡层上形成p型接合电极。在n掺杂氮化物半导体层上形成n电极。

20. 发明申请

US20050145875A1 Flip chip type nitride semiconductor light emitting device and manufacturing method thereof 有权
标题翻译：倒装芯片型氮化物半导体发光器件及其制造方法
公开(公告)号：US20050145875A1
公开(公告)日：2005-07-07
申请号：US10861511
申请日：2004-06-07
申请人： Hyun Kim , Yong Kim , Hyoun Shin
发明人： Hyun Kim , Yong Kim , Hyoun Shin
IPC分类号： H01L21/28 , H01L33/10 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/62 , H01L33/00
CPC分类号： H01L33/405 , H01L33/32
摘要： Disclosed herein are a flip chip type nitride semiconductor light emitting device, which comprises a substrate for growing a nitride semiconductor material, an n-type nitride semiconductor layer formed on the substrate, an active layer formed on at least a part of the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, a bonding force providing layer formed on the p-type nitride semiconductor layer and adapted to provide a bonding force relative to the p-type nitride semiconductor layer, a reflective electrode layer formed on the bonding force providing layer, and adapted to reflect light produced in the active layer toward the substrate and to diffuse electric current, and a cap layer formed on the reflective electrode layer, and adapted to provide a bonding force between the reflective electrode layer and a bonding metal and to reduce contact resistance.
摘要翻译：本文公开了一种倒装芯片型氮化物半导体发光器件，其包括用于生长氮化物半导体材料的衬底，形成在衬底上的n型氮化物半导体层，形成在n型氮化物半导体的至少一部分上的有源层氮化物半导体层，形成在有源层上的p型氮化物半导体层，形成在p型氮化物半导体层上并适于提供相对于p型氮化物半导体层的结合力的接合力提供层，反射电极层，形成在所述接合力提供层上，并且适于将在所述有源层中产生的光朝向所述衬底反射并扩散电流;以及覆盖层，形成在所述反射电极层上，并且适于在所述反射层之间提供接合力电极层和接合金属，并降低接触电阻。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式