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11. 发明授权

US06890688B2 Lithographic template and method of formation and use 有权
标题翻译：光刻模板及其形成和使用方法
公开(公告)号：US06890688B2
公开(公告)日：2005-05-10
申请号：US10022489
申请日：2001-12-18
申请人： David P. Mancini , Douglas J. Resnick , Carlton Grant Willson
发明人： David P. Mancini , Douglas J. Resnick , Carlton Grant Willson
IPC分类号： G03F7/00 , G03F7/09 , G03C5/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0017 , G03F7/093
摘要： This invention relates to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template (10, 110, 210) is formed having a substrate (12, 112, 212) and a charge dissipation layer (20, 120, 220), and a patterned imageable relief layer, (16, 116, 216) formed on a surface (14, 114, 214) of the substrate (10, 110, 210) using radiation. The template (10, 110, 210) is used in the fabrication of a semiconductor device (344) for affecting a pattern in the device (344) by positioning (338) the template (10, 11, 210) in close proximity to semiconductor device (344) having a radiation sensitive material (334) formed thereon and applying a pressure (340) to cause the radiation sensitive material to flow into the relief image present on the template (10, 110, 210). Radiation (342) is then applied through the template (10, 110, 210) to cure portions of the radiation sensitive material and define the pattern in the radiation sensitive material. The template (10, 110, 210) is then removed to complete fabrication of semiconductor device (344).
摘要翻译：本发明涉及一种光刻模板，一种形成光刻模板的方法和一种用该光刻模板形成器件的方法。光刻模板（10,110,210）形成为具有衬底（12,112,212）和电荷耗散层（20,120,220），以及形成图案的可成像的浮雕层（16,116,216），形成在使用辐射的衬底（10,110,210）的表面（14,114,214）上。模板（10,110,210）用于制造半导体器件（344），用于通过将模板（10,11,210）定位（338）靠近半导体来影响器件（344）中的图案装置（344），其上形成有辐射敏感材料（334），并施加压力（340）以使得辐射敏感材料流入存在于模板（10,110,210）上的浮雕图像中。辐射（342）然后通过模板（10,110,210）施加以固化辐射敏感材料的部分并且限定辐射敏感材料中的图案。然后去除模板（10,110,210）以完成半导体器件（344）的制造。

12. 发明授权

US06852454B2 Multi-tiered lithographic template and method of formation and use 失效
标题翻译：多层平版印刷板及其形成与使用方法
公开(公告)号：US06852454B2
公开(公告)日：2005-02-08
申请号：US10174464
申请日：2002-06-18
申请人： David P. Mancini , Douglas J. Resnick
发明人： David P. Mancini , Douglas J. Resnick
IPC分类号： G03F7/11 , B81C99/00 , G03F7/00 , H01L21/027 , G03F9/00 , G03C5/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0017 , G03F7/0035
摘要： This invention relates to semiconductor devices, microelectronic devices, microelectromechanical devices, microfluidic devices, photonic devices, and more particularly to a multi-tiered lithographic template, a method of forming the multi-tiered lithographic template and a method for forming devices with the multi-tiered lithographic template. The multi-tiered lithographic template (10/10′) is formed having a first relief structure and a second relief structure, thereby defining a multi-tiered relief image. The template is used in the fabrication of a semiconductor device (40) for affecting a pattern in device (40) by positioning the template in close proximity to semiconductor device (40) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the multi-tiered relief image present on the template. Radiation is then applied through the multi-tiered template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The multi-tiered template is then removed to complete fabrication of semiconductor device (40).
摘要翻译：本发明涉及半导体器件，微电子器件，微机电器件，微流器件，光子器件，更具体地涉及多层光刻模板，形成多层光刻模板的方法和用于形成具有多层光刻模板的器件的方法，分层光刻模板。多层平版印刷板（10/10'）形成为具有第一浮雕结构和第二浮雕结构，由此限定多层浮雕图像。该模板用于制造用于通过将模板靠近其上形成有辐射敏感材料的半导体器件（40）定位模板来影响器件（40）中的图案并施加压力的半导体器件（40）辐射敏感材料流入模板上存在的多层浮雕图像。然后通过多层模板施加辐射，以便进一步固化辐射敏感材料的部分，并进一步限定辐射敏感材料中的图案。然后去除多层模板以完成半导体器件（40）的制造。

13. 发明授权

US06630746B1 Semiconductor device and method of making the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US06630746B1
公开(公告)日：2003-10-07
申请号：US09566961
申请日：2000-05-09
申请人： David P. Mancini , Douglas J. Resnick , Harland G. Tompkins , Karen E. Moore
发明人： David P. Mancini , Douglas J. Resnick , Harland G. Tompkins , Karen E. Moore
IPC分类号： H01L2348
CPC分类号： G03F9/7076 , G03F9/7069 , H01L2223/54426
摘要： An alignment mark (51) is formed on the surface (64) of a silicon carbide substrate (50). The alignment mark (51) is used to reflect a light signal (72) to determine the proper position for the silicon carbide substrate (50). The materials that are used to form the alignment mark (51) can be used to form an alignment mark on any transparent or semi-transparent substrate and will maintain physical integrity through very high temperature processing steps.
摘要翻译：在碳化硅衬底（50）的表面（64）上形成对准标记（51）。对准标记（51）用于反射光信号（72）以确定碳化硅衬底（50）的适当位置。用于形成对准标记（51）的材料可以用于在任何透明或半透明基材上形成对准标记，并且将通过非常高的温度处理步骤来保持物理完整性。

14. 发明授权

US06992371B2 Device including an amorphous carbon layer for improved adhesion of organic layers and method of fabrication 有权
标题翻译：包括用于改善有机层的粘附性的无定形碳层的装置及其制造方法
公开(公告)号：US06992371B2
公开(公告)日：2006-01-31
申请号：US10892693
申请日：2004-07-16
申请人： David P. Mancini , Jaime A. Quintero , Doug J. Resnick , Steven M. Smith
发明人： David P. Mancini , Jaime A. Quintero , Doug J. Resnick , Steven M. Smith
IPC分类号： H01L23/48 , H01L23/42 , H01L29/40
CPC分类号： G03F7/094 , B82Y10/00 , G03F7/09
摘要： A novel device, such as a semiconductor device, a microfluidic device, a surface acoustic wave device an imprint template, or the like, including an amorphous carbon layer for improved adhesion of organic layers and method of fabrication. The device includes a substrate having a surface, an amorphous carbon layer, formed overlying the surface of the substrate, and a low surface energy material layer overlying the surface of the substrate. The device is formed by providing a substrate having a surface, depositing a low surface energy material layer and an amorphous carbon layer overlying the surface of the substrate adjacent the low surface energy material layer using plasma enhanced chemical vapor deposition (PECVD) or sputtering.
摘要翻译：包括用于改善有机层的粘合性的无定形碳层和制造方法的新型装置，例如半导体装置，微流体装置，表面声波装置，印模模板等。该器件包括具有覆盖在衬底表面上的表面，无定形碳层和覆盖衬底表面的低表面能材料层的衬底。该器件通过使用等离子体增强化学气相沉积（PECVD）或溅射提供具有表面的衬底，沉积低表面能材料层和覆盖邻近低表面能材料层的衬底的表面的无定形碳层而形成。

15. 发明授权

US06737202B2 Method of fabricating a tiered structure using a multi-layered resist stack and use 有权
标题翻译：使用多层抗蚀剂叠层制造分层结构的方法和用途
公开(公告)号：US06737202B2
公开(公告)日：2004-05-18
申请号：US10081199
申请日：2002-02-22
申请人： Kathleen Ann Gehoski , Laura Popovich , David P. Mancini , Doug J. Resnick
发明人： Kathleen Ann Gehoski , Laura Popovich , David P. Mancini , Doug J. Resnick
IPC分类号： H01L21302
CPC分类号： H01L21/0272 , H01L21/0274 , H01L29/42316 , Y10S438/951
摘要： An improved and novel method of forming a tiered structure, such as a T-gate structure, including the fabrication of a stabilized resist layer that provides for the prevention of interlayer intermixing with the deposition of subsequent resist layers. The method includes patterning a base resist layer to provide for an opening which will form the stem of the tiered structure and subsequently stabilizing the resist base layer without deforming the stem opening. Next, a resist stack is deposited on an uppermost surface of the stabilized resist layer. Patterning the resist stack provides for an opening on an uppermost layer or portion, and a reentrant profile in a portion of the resist stack adjacent the stabilized resist layer. Metallization and subsequent removal of the resist layers results in a tiered structure, such as a T-gate structure, formed using only low to medium molecular weight, linear polymeric materials such as those used in positive optical resists in optical lithography.
摘要翻译：形成诸如T型栅结构的分层结构的改进和新颖的方法，包括制造稳定的抗蚀剂层，其提供防止与随后的抗蚀剂层的沉积的层间混合。该方法包括图案化基底抗蚀剂层以提供将形成分层结构的杆的开口，并且随后使抗蚀剂基底层稳定，而不会使阀杆开口变形。接着，在稳定化的抗蚀剂层的最上表面上淀积抗蚀剂叠层。抗蚀剂层的图案化提供了最上层或部分上的开口，以及在抗蚀剂层的与稳定的抗蚀剂层相邻的部分中的折入轮廓。金属化和随后的抗蚀剂层的去除导致仅使用低分子量至中等分子量的线性聚合物材料（例如在光学光刻中的正光学抗蚀剂中使用的那些）形成的分层结构，例如T形栅结构。

16. 发明授权

US06083806A Method of forming an alignment mark 失效
标题翻译：形成对准标记的方法
公开(公告)号：US06083806A
公开(公告)日：2000-07-04
申请号：US110352
申请日：1998-07-06
申请人： David P. Mancini , Douglas J. Resnick , Harland G. Tompkins , Karen E. Moore
发明人： David P. Mancini , Douglas J. Resnick , Harland G. Tompkins , Karen E. Moore
IPC分类号： G03F9/00 , H01L23/544 , H01L21/76
CPC分类号： G03F9/708 , G03F9/7084 , H01L23/544 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002
摘要： An alignment mark (51) is formed on the surface (64) of a silicon carbide substrate (50). The alignment mark (51) is used to reflect a light signal (72) to determine the proper position for the silicon carbide substrate (50). The materials that are used to form the alignment mark (51) can be used to form an alignment mark on any transparent or semi-transparent substrate and will maintain physical integrity through very high temperature processing steps.
摘要翻译：在碳化硅衬底（50）的表面（64）上形成对准标记（51）。对准标记（51）用于反射光信号（72）以确定碳化硅衬底（50）的适当位置。用于形成对准标记（51）的材料可以用于在任何透明或半透明基材上形成对准标记，并且将通过非常高的温度处理步骤来保持物理完整性。

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