专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US08747556B2 Apparatuses and methods for atomic layer deposition 有权
标题翻译：用于原子层沉积的装置和方法
公开(公告)号：US08747556B2
公开(公告)日：2014-06-10
申请号：US13618741
申请日：2012-09-14
申请人： Hyman W. H. Lam , Bo Zheng , Hua Ai , Michael Jackson , Xiaoxiong Yuan , Hougong Wang , Salvador P. Umotoy , Sang Ho Yu
发明人： Hyman W. H. Lam , Bo Zheng , Hua Ai , Michael Jackson , Xiaoxiong Yuan , Hougong Wang , Salvador P. Umotoy , Sang Ho Yu
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/45536 , C23C16/45544 , C23C16/4558 , H01J37/32449 , Y10T137/87265
摘要： Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.
摘要翻译：本发明的实施例提供了诸如等离子体增强型ALD（PE-ALD）的原子层沉积（ALD）的装置和方法。在一些实施例中，提供了一种PE-ALD室，其包括与其中具有基板支撑件的室主体耦合的室盖组件。在一个实施例中，室盖组件具有入口歧管组件，其包含围绕集中通道的环形通道，其中集中通道延伸穿过入口歧管组件，并且入口歧管组件还包含从环形通道延伸的注入孔，集中通道侧壁，集中通道。腔室盖组件还包括设置在入口歧管组件下方的喷头组件，设置在入口歧管组件和喷头组件之间的水箱，以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统（RPS）与集中通道的流体通信。

12. 发明申请

US20130008984A1 APPARATUSES AND METHODS FOR ATOMIC LAYER DEPOSITION 有权
标题翻译：用于原子层沉积的装置和方法
公开(公告)号：US20130008984A1
公开(公告)日：2013-01-10
申请号：US13618741
申请日：2012-09-14
申请人： Hyman Lam , Bo Zheng , Hua Ai , Michael Jackson , Xiaoxiong (John) Yuan , Hou Gong Wang , Salvador P. Umotoy , Sang Ho Yu
发明人： Hyman Lam , Bo Zheng , Hua Ai , Michael Jackson , Xiaoxiong (John) Yuan , Hou Gong Wang , Salvador P. Umotoy , Sang Ho Yu
IPC分类号： C23C16/455
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/45536 , C23C16/45544 , C23C16/4558 , H01J37/32449 , Y10T137/87265
摘要： Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.
摘要翻译：本发明的实施例提供了诸如等离子体增强型ALD（PE-ALD）的原子层沉积（ALD）的装置和方法。在一些实施例中，提供了一种PE-ALD室，其包括与其中具有基板支撑件的室主体耦合的室盖组件。在一个实施例中，室盖组件具有入口歧管组件，其包含围绕集中通道的环形通道，其中集中通道延伸穿过入口歧管组件，并且入口歧管组件还包含从环形通道延伸的注入孔，集中通道侧壁，集中通道。室盖组件还包括布置在入口歧管组件下方的喷头组件，设置在入口歧管组件和喷头组件之间的水箱，以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统（RPS）与集中通道的流体通信。

13. 发明授权

US08293015B2 Apparatuses and methods for atomic layer deposition 有权
公开(公告)号：US08293015B2
公开(公告)日：2012-10-23
申请号：US13232317
申请日：2011-09-14
申请人： Hyman W. H. Lam , Bo Zheng , Hua Ai , Michael Jackson , Xiaoxiong Yuan , Hougong Wang , Salvador P. Umotoy , Sang Ho Yu
发明人： Hyman W. H. Lam , Bo Zheng , Hua Ai , Michael Jackson , Xiaoxiong Yuan , Hougong Wang , Salvador P. Umotoy , Sang Ho Yu
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/45536 , C23C16/45544 , C23C16/4558 , H01J37/32449 , Y10T137/87265
摘要： Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

14. 发明授权

US5766365A Removable ring for controlling edge deposition in substrate processing apparatus 失效
标题翻译：用于控制基板处理装置中的边缘沉积的可拆卸环
公开(公告)号：US5766365A
公开(公告)日：1998-06-16
申请号：US472220
申请日：1995-06-07
申请人： Salvador P. Umotoy , Alan F. Morrison , Karl A. Littau , Richard A. Marsh , Lawrence Chung-Lai Lei
发明人： Salvador P. Umotoy , Alan F. Morrison , Karl A. Littau , Richard A. Marsh , Lawrence Chung-Lai Lei
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/205 , H01L21/28 , H01L21/285 , H01L21/68 , H01L21/683 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/6833 , H01L21/68735 , H01L21/68792
摘要： A substrate processing apparatus comprising a processing chamber in which a substrate support is located. The substrate support, which is in the form of a heater pedestal, has a surface dimensioned to receive the substrate, and is circumscribed by a removable purge ring which defines an annulus between itself and the pedestal. At the outer edge of the pedestal is a purge gas manifold, in the form of a cavity between the purge ring and the pedestal. The lower end of the manifold is sealed by means of a mechanical seal that is formed at process temperature as the pedestal expands from heating and comes into contact with the purge ring's lower edge. The upper end of the manifold opens into the annulus defined by the purge ring and the pedestal. The manifold is arranged so that during processing, purge gas is injected into the manifold and projected toward the edge of a substrate received on the surface of the pedestal. This gas moves upwards through the annulus defined between the purge ring and the substrate support. Consequently, processing gas is prevented from contacting the extreme edge portion of the substrate. This reduces unwanted deposition on the peripheral edge and lower surface of the substrate.
摘要翻译：一种基板处理装置，包括其中位于基板支撑件的处理室。处于加热器基座形式的衬底支撑件具有尺寸适于接收衬底的表面，并且由可拆卸的清除环限定，该清除环在其与底座之间限定环形空间。在基座的外边缘处是净化气体歧管，其形式为清洗环和基座之间的空腔。歧管的下端通过机械密封进行密封，机械密封在工艺温度下形成，因为基座从加热膨胀并与清洗环的下边缘接触。歧管的上端开口进入由清洗环和基座限定的环形空间。歧管被布置成使得在处理期间，吹扫气体被注入到歧管中并且朝着接收在基座的表面上的基板的边缘突出。该气体向上移动通过清洗环和衬底支撑件之间限定的环形空间。因此，防止处理气体与基板的最外缘部分接触。这减少了衬底的外围边缘和下表面上的不希望的沉积。

15. 发明授权

US08291857B2 Apparatuses and methods for atomic layer deposition 有权
标题翻译：用于原子层沉积的装置和方法
公开(公告)号：US08291857B2
公开(公告)日：2012-10-23
申请号：US12494901
申请日：2009-06-30
申请人： Hyman Lam , Bo Zheng , Hua Ai , Michael Jackson , Xiaoxiong (John) Yuan , Hou Gong Wang , Salvador P. Umotoy , Sang Ho Yu
发明人： Hyman Lam , Bo Zheng , Hua Ai , Michael Jackson , Xiaoxiong (John) Yuan , Hou Gong Wang , Salvador P. Umotoy , Sang Ho Yu
IPC分类号： C23C16/452 , C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/45536 , C23C16/45544 , C23C16/4558 , H01J37/32449 , Y10T137/87265
摘要： Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.
摘要翻译：本发明的实施例提供了诸如等离子体增强型ALD（PE-ALD）的原子层沉积（ALD）的装置和方法。在一些实施例中，提供了一种PE-ALD室，其包括与其中具有基板支撑件的室主体耦合的室盖组件。在一个实施例中，室盖组件具有入口歧管组件，其包含围绕集中通道的环形通道，其中集中通道延伸穿过入口歧管组件，并且入口歧管组件还包含从环形通道延伸的注入孔，集中通道侧壁，集中通道。腔室盖组件还包括设置在入口歧管组件下方的喷头组件，设置在入口歧管组件和喷头组件之间的水箱，以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统（RPS）与集中通道的流体通信。

16. 发明授权

US06461435B1 Showerhead with reduced contact area 有权
标题翻译：淋浴头接触面积减小
公开(公告)号：US06461435B1
公开(公告)日：2002-10-08
申请号：US09603117
申请日：2000-06-22
申请人： Karl A. Littau , Bevan Vo , Salvador P. Umotoy , Son N. Trinh , Chien-Teh Kao , Ken Kaung Lai , Bo Zheng , Ping Jian , Siqing Lu , Anzhong Chang
发明人： Karl A. Littau , Bevan Vo , Salvador P. Umotoy , Son N. Trinh , Chien-Teh Kao , Ken Kaung Lai , Bo Zheng , Ping Jian , Siqing Lu , Anzhong Chang
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/455 , H01J37/3244
摘要： A showerhead for distributing gases in a semiconductor process chamber. In one embodiment, a showerhead comprising a perforated center portion, a mounting portion circumscribing the perforated center portion and a plurality of bosses extending from the mounting portion each having a hole disposed therethrough is provided. Another embodiment of the invention provides a showerhead that includes a mounting portion having a first side circumscribing a perforated center portion. A ring extends from the first side of the mounting portion. A plurality of mounting holes are disposed in the mounting portion radially to either side of the ring. The showerhead provides controlled thermal transfer between the showerhead and chamber lid resulting in less deposition on the showerhead.
摘要翻译：用于在半导体处理室中分配气体的喷头。在一个实施例中，提供了一种喷头，包括穿孔中心部分，围绕穿孔中心部分的安装部分和从安装部分延伸的多个凸起，每个凸起具有穿过其中设置的孔。本发明的另一个实施例提供了一种喷头，其包括具有围绕穿孔中心部分的第一侧面的安装部分。环从安装部分的第一侧延伸。多个安装孔径向地设置在安装部分的环的任一侧。淋浴头在喷头和室盖之间提供受控的热转印，从而在喷头上沉积较少。

17. 发明授权

US5888304A Heater with shadow ring and purge above wafer surface 失效
标题翻译：加热器带有阴影环并在晶片表面上方吹扫
公开(公告)号：US5888304A
公开(公告)日：1999-03-30
申请号：US626789
申请日：1996-04-02
申请人： Salvador P. Umotoy , Alan F. Morrison , Karl A. Littau , Richard A. Marsh , Lawrence Chung-Lai Lei , Dale DuBois
发明人： Salvador P. Umotoy , Alan F. Morrison , Karl A. Littau , Richard A. Marsh , Lawrence Chung-Lai Lei , Dale DuBois
IPC分类号： C23C16/02 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/4585 , C23C16/46
摘要： This invention provides a method and apparatus for supporting a wafer in a processing chamber, where the wafer is supported and heated from below via a heater pedestal having a diameter larger than that of the wafer. A process fluid flowing downward toward the top of the wafer is inhibited from depositing near the wafer edge by a shadow ring. The shadow ring, which is placed over but does not contact the wafer, physically masks an annular strip of the wafer near its edge. The shadow ring inhibits deposition of process fluides on the wafer in two distinct ways. First, the shadow ring physically obstructs process gas, flowing downward from above the wafer, from depositing on the masked portion of the wafer. Second, the shadow ring is used to direct a flow of a purge gas to inhibit process gas from seeping under the shadow ring and depositing near the wafer edge. A purge gas manifold is defined by a cylindrical annulus located concentrically below the shadow ring and circumscribing the heater pedestal. A purge gap between the wafer and the shadow ring forms the outlet of the purge gas manifold. The purge gas flows out of the purge gap, inhibiting the process gas from entering the purge gap, and thus further inhibiting deposition on the masked portion of the wafer.
摘要翻译：本发明提供了一种用于在处理室中支撑晶片的方法和装置，其中通过直径大于晶片直径的加热器基座从下方支撑晶片并从其下被加热。向晶片顶部向下流动的工艺流体被阴影环抑制在晶片边缘附近沉积。放置在但不接触晶片的阴影环在其边缘附近物理屏蔽晶片的环形条。阴影环以两种截然不同的方式阻止了工艺流程在晶片上沉积。首先，阴影环物理地阻挡从晶片上方向下流动的工艺气体沉积在晶片的掩蔽部分上。第二，阴影环用于引导吹扫气体的流动，以阻止处理气体在阴影环下渗出并沉积在晶片边缘附近。吹扫气体歧管由同心地位于阴影环下方并围绕加热器基座的圆柱形环限定。晶片和阴影环之间的吹扫间隙形成吹扫气体歧管的出口。净化气体流出吹扫间隙，阻止处理气体进入吹扫间隙，从而进一步抑制沉积在晶片的掩蔽部分上。

18. 发明授权

US07905959B2 Lid assembly for a processing system to facilitate sequential deposition techniques 有权
标题翻译：用于处理系统的盖组件以便顺序沉积技术
公开(公告)号：US07905959B2
公开(公告)日：2011-03-15
申请号：US10993924
申请日：2004-11-19
申请人： Gwo-Chuan Tzu , Salvador P. Umotoy
发明人： Gwo-Chuan Tzu , Salvador P. Umotoy
IPC分类号： C23C16/452 , H01L21/50
CPC分类号： C23C16/45544 , C23C16/455 , C23C16/45512 , C23C16/45525 , C23C16/45538 , C23C16/45561 , C23C16/50 , H01L21/67017
摘要： A lid assembly for a semiconductor processing system is provided. The lid assembly generally includes a lid having first and second opposed surfaces, a plurality of controllable flow channels extending from the first and second opposed surfaces and a gas control system disposed on the first surface and operably opening and closing the channels. The gas control system includes a gas manifold disposed on the lid, at least one valve coupled to the gas manifold and adapted to control a flow through one of the flow channels, a reservoir fluidly connected to the gas manifold, and a precursor source fluidly connected to the reservoir.
摘要翻译：提供了一种用于半导体处理系统的盖组件。盖组件通常包括具有第一和第二相对表面的盖，从第一和第二相对表面延伸的多个可控流动通道和设置在第一表面上并可操作地打开和关闭通道的气体控制系统。气体控制系统包括设置在盖上的气体歧管，至少一个阀，其连接到气体歧管并且适于控制通过流动通道之一的流动，流体连接到气体歧管的储存器和流体连接的前体源到水库

19. 发明申请

US20080206987A1 PROCESS FOR TUNGSTEN NITRIDE DEPOSITION BY A TEMPERATURE CONTROLLED LID ASSEMBLY 审中-公开
标题翻译：通过温度控制的盖组件对硝酸镍沉积的方法
公开(公告)号：US20080206987A1
公开(公告)日：2008-08-28
申请号：US12021798
申请日：2008-01-29
申请人： Avgerinos V. Gelatos , Sang-Hyeob Lee , Xiaoxiong Yuan , Salvador P. Umotoy , Yu Chang , Gwo-Chuan Tzu , Emily Renuart , Jing Lin , Wing-Cheong Lai , Sang Q. Le
发明人： Avgerinos V. Gelatos , Sang-Hyeob Lee , Xiaoxiong Yuan , Salvador P. Umotoy , Yu Chang , Gwo-Chuan Tzu , Emily Renuart , Jing Lin , Wing-Cheong Lai , Sang Q. Le
IPC分类号： H01L21/44
CPC分类号： C23C16/14 , C23C16/34 , C23C16/4401 , C23C16/4411 , C23C16/45512 , C23C16/45523
摘要： Embodiments of the invention provide processes for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a method for forming a tungsten-containing material is provided which includes positioning a substrate within a processing chamber containing a lid plate, heating the lid plate to a temperature within a range from about 120° C. to about 180° C., exposing the substrate to a reducing gas during a pre-nucleation soak process, and depositing a first tungsten nucleation layer on the substrate during a first atomic layer deposition process within the processing chamber. The method further provides depositing a tungsten nitride layer on the first tungsten nucleation layer during a vapor deposition process, depositing a second tungsten nucleation layer on the tungsten nitride layer during a second atomic layer deposition process within the processing chamber, and exposing the substrate to another reducing gas during a post-nucleation soak process.
摘要翻译：本发明的实施方案提供了诸如金属钨和氮化钨的含钨材料的气相沉积方法。在一个实施例中，提供了一种用于形成含钨材料的方法，其包括将衬底定位在包含盖板的处理室内，将盖板加热至约120℃至约180℃的温度在预成核浸泡工艺期间将衬底暴露于还原气体，以及在处理室内的第一原子层沉积工艺期间在衬底上沉积第一钨成核层。该方法还提供了在气相沉积工艺期间在第一钨成核层上沉积氮化钨层，在处理室内的第二原子层沉积工艺期间在氮化钨层上沉积第二钨成核层，并将衬底暴露于另一个在后成核浸泡过程中还原气体。

20. 发明申请

US20080202425A1 TEMPERATURE CONTROLLED LID ASSEMBLY FOR TUNGSTEN NITRIDE DEPOSITION 有权
标题翻译：用于硝酸铁沉积的温度控制组件
公开(公告)号：US20080202425A1
公开(公告)日：2008-08-28
申请号：US12021825
申请日：2008-01-29
申请人： Avgerinos V. Gelatos , Sang-Hyeob Lee , Xiaoxiong Yuan , Salvador P. Umotoy , Yu Chang , Gwo-Chuan Tzu , Emily Renuart , Jing Lin , Wing-Cheong Lai , Sang Q. Le
发明人： Avgerinos V. Gelatos , Sang-Hyeob Lee , Xiaoxiong Yuan , Salvador P. Umotoy , Yu Chang , Gwo-Chuan Tzu , Emily Renuart , Jing Lin , Wing-Cheong Lai , Sang Q. Le
IPC分类号： C23C16/06
CPC分类号： C23C16/14 , C23C16/34 , C23C16/4401 , C23C16/4411 , C23C16/45512 , C23C16/45523
摘要： Embodiments of the invention provide apparatuses for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a processing chamber is provided which includes a lid assembly containing a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., more preferably, from about 145° C. to about 155° C. The mixing cavity may be in fluid communication with a tungsten precursor source containing tungsten hexafluoride and a nitrogen precursor source containing ammonia. In some embodiments, a single processing chamber may be used to deposit metallic tungsten and tungsten nitride materials by CVD processes.
摘要翻译：本发明的实施例提供了用于气相沉积含钨材料如金属钨和氮化钨的装置。在一个实施例中，提供了一种处理室，其包括盖子组件，该盖子组件包含盖板，喷头，混合腔，分配腔和容纳在盖板内的电阻加热元件。在一个示例中，电阻加热元件被配置成将盖板设置在约120℃至约180℃，优选约140℃至约160℃的温度范围内，更多优选约145℃至约155℃。混合腔可与含有六氟化钨的钨前体源和含氨的氮前体源流体连通。在一些实施例中，单个处理室可用于通过CVD工艺沉积金属钨和氮化钨材料。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式