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11. 发明授权

US07759248B2 Semiconductor memory device and method of fabricating the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US07759248B2
公开(公告)日：2010-07-20
申请号：US11585087
申请日：2006-10-24
申请人： Seong-Hwee Cheong , Sang-Woo Lee , Jong-Won Hong , Seung-Gil Yang , Kyung-In Choi , Hyun-Bae Lee
发明人： Seong-Hwee Cheong , Sang-Woo Lee , Jong-Won Hong , Seung-Gil Yang , Kyung-In Choi , Hyun-Bae Lee
IPC分类号： H01L21/44 , H01L23/48
CPC分类号： H01L21/76846 , H01L21/28562 , H01L21/76843
摘要： A semiconductor memory device and a method of fabricating the same are disclosed. The semiconductor memory device may include a conductive layer doped with impurities, a non-conductive layer on the conductive layer and undoped with impurities, an interlayer insulating film on the non-conductive layer and having a contact hole for exposing an upper surface of the non-conductive layer, an ohmic tungsten film on the contact hole, a lower portion of the ohmic tungsten film permeating the non-conductive layer to come in contact with the conductive layer, a tungsten nitride film on the contact hole on the ohmic tungsten film, and a tungsten film on the tungsten nitride film to fill the contact hole.
摘要翻译：公开了一种半导体存储器件及其制造方法。半导体存储器件可以包括掺杂有杂质的导电层，在导电层上不掺杂的非导电层，在非导电层上的层间绝缘膜，并且具有用于暴露非导电层的上表面的接触孔导电层，接触孔上的欧姆钨膜，渗透非导电层的欧姆钨膜的下部与导电层接触，在欧姆钨膜上的接触孔上形成氮化钨膜，并在氮化钨膜上形成钨膜以填充接触孔。

12. 发明授权

US07662716B2 Method for forming silicide contacts 有权
标题翻译：形成硅化物接触的方法
公开(公告)号：US07662716B2
公开(公告)日：2010-02-16
申请号：US11355112
申请日：2006-02-14
申请人： Hyun-Su Kim , Kwang-Jin Moon , Sang-Woo Lee , Eun-Ok Lee , Ho-Ki Lee
发明人： Hyun-Su Kim , Kwang-Jin Moon , Sang-Woo Lee , Eun-Ok Lee , Ho-Ki Lee
IPC分类号： H01L21/28 , H01L21/44 , H01L21/4763
CPC分类号： H01L21/76855 , H01L21/28556 , H01L21/76843
摘要： Contacts having different characteristics may be created by forming a first silicide layer over a first device region of a substrate, and then forming a second silicide layer over a second device region while simultaneously further forming the first silicide layer. A first contact hole may be formed in a dielectric layer over a first device region of a substrate. A silicide layer may then be formed in the first contact hole. A second contact hole may be formed after the first contact hole and silicide layer is formed. A second silicidation may then be performed in the first and second contact holes.
摘要翻译：可以通过在衬底的第一器件区域上形成第一硅化物层，然后在第二器件区域上形成第二硅化物层，同时进一步形成第一硅化物层来产生具有不同特性的触点。可以在衬底的第一器件区域上的介电层中形成第一接触孔。然后可以在第一接触孔中形成硅化物层。可以在形成第一接触孔和硅化物层之后形成第二接触孔。然后可以在第一和第二接触孔中执行第二硅化。

13. 发明申请

US20090261713A1 ORGANIC LIGHT EMITTING DEVICE 有权
标题翻译：有机发光装置
公开(公告)号：US20090261713A1
公开(公告)日：2009-10-22
申请号：US12260955
申请日：2008-10-29
申请人： Beohm-Rock CHOI , Sang-Woo Lee , Un-Cheol Sung , Jung-Soo Rhee , Young-Rok Song , Jung-Yeon Kim
发明人： Beohm-Rock CHOI , Sang-Woo Lee , Un-Cheol Sung , Jung-Soo Rhee , Young-Rok Song , Jung-Yeon Kim
IPC分类号： H01J1/62
CPC分类号： H01L27/3276 , H01L51/5052 , H01L51/5088 , H01L51/5092 , H01L51/5234 , H01L51/5265 , H01L2251/5315
摘要： An organic light emitting device according to an exemplary embodiment of the present invention includes: a substrate; a first signal line and a second signal line formed on the substrate and intersecting each other; a common voltage line formed on the substrate, and intersecting one of the first signal line and the second signal line; a switching thin film transistor connected to the first signal line and the second signal line; a driving thin film transistor connected to the switching thin film transistor; an insulating layer covering the first signal line, the second signal line, the switching thin film transistor, and the driving thin film transistor; a pixel electrode formed on the insulating layer, and electrically connected to the driving thin film transistor; an organic light emitting member formed on the pixel electrode and including an emission layer and a member layer; and a common electrode formed on the organic light emitting member, wherein the member layer is made of a plurality of layers including electrons or holes, and at least one layer of the member layer is disposed between the common voltage line and the common electrode to electrically connect between the common voltage line and the common electrode.
摘要翻译：根据本发明的示例性实施例的有机发光器件包括：基板; 形成在所述基板上并且彼此交叉的第一信号线和第二信号线; 形成在所述基板上并与所述第一信号线和所述第二信号线之一相交的公共电压线; 连接到第一信号线和第二信号线的开关薄膜晶体管; 连接到开关薄膜晶体管的驱动薄膜晶体管; 覆盖第一信号线，第二信号线，开关薄膜晶体管和驱动薄膜晶体管的绝缘层; 形成在所述绝缘层上并与所述驱动薄膜晶体管电连接的像素电极; 形成在所述像素电极上并且包括发射层和成员层的有机发光部件; 以及形成在有机发光部件上的公共电极，其中，所述部件层由包含电子或空穴的多个层构成，并且至少一层所述部件层设置在所述公共电压线与所述公共电极之间，在公共电压线和公共电极之间连接。

14. 发明授权

US07481351B2 Wire bonding apparatus and method for clamping a wire 有权
标题翻译：导线接合装置和夹紧线的方法
公开(公告)号：US07481351B2
公开(公告)日：2009-01-27
申请号：US10928402
申请日：2004-08-30
申请人： Tae-Hyun Kim , Youn-Sung Ko , Young-Kyun Sun , Dae-Soo Kim , Kook-Jin Oh , Sang-Woo Lee , Dong-Bin Kim
发明人： Tae-Hyun Kim , Youn-Sung Ko , Young-Kyun Sun , Dae-Soo Kim , Kook-Jin Oh , Sang-Woo Lee , Dong-Bin Kim
IPC分类号： B23K31/02 , B23K37/04
CPC分类号： H01L24/85 , B23K20/004 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/78 , H01L2224/05553 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48225 , H01L2224/48227 , H01L2224/48465 , H01L2224/48472 , H01L2224/49171 , H01L2224/78268 , H01L2224/78301 , H01L2224/786 , H01L2224/7865 , H01L2224/789 , H01L2224/78901 , H01L2224/85045 , H01L2224/851 , H01L2224/85181 , H01L2224/85205 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/00014 , H01L2924/00 , H01L2924/00015
摘要： A controller may receive a wire disconnection signal from a wire bonding monitoring system and operate a wire clamp to clamp a disconnected wire. A series of operations, which may include a wire drawing operation, a wire tail forming operation and a ball forming operation, may be automatically performed. A sensor may measure the length of the wire drawn through the capillary and the location of a ball that may be formed at a wire tail. An auxiliary clamp may be installed between the wire clamp and the capillary for drawing the wire using sensor information.
摘要翻译：控制器可以从引线接合监测系统接收线断线信号，并且操作线夹以夹紧断开的线。可以自动执行一系列操作，其可以包括拉丝操作，线尾成型操作和滚珠成形操作。传感器可以测量通过毛细管拉出的丝的长度和可以形成在丝尾的球的位置。辅助夹具可以安装在线夹和毛细管之间，用于使用传感器信息绘制线。

15. 发明申请

US20080136040A1 Methods of Forming Electrical Interconnects Using Non-Uniformly Nitrified Metal Layers and Interconnects Formed Thereby 审中-公开
标题翻译：使用非均匀硝化金属层和互连形成电互连的方法
公开(公告)号：US20080136040A1
公开(公告)日：2008-06-12
申请号：US11778344
申请日：2007-07-16
申请人： Jin-Ho Park , Seong-Hwee Cheong , Gil-Heyun Choi , Sang-Woo Lee , Ho-Ki Lee
发明人： Jin-Ho Park , Seong-Hwee Cheong , Gil-Heyun Choi , Sang-Woo Lee , Ho-Ki Lee
IPC分类号： H01L21/4763 , H01L23/48
CPC分类号： H01L23/53266 , H01L21/76843 , H01L21/76856 , H01L23/53223 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming electrical interconnects include forming a first electrically insulating layer on a semiconductor substrate and then forming an opening in the first electrically insulating layer. A step is performed to line a sidewall of the opening with a nitrified first metal layer having a non-uniform nitrogen concentration therein. An electrically conductive pattern is formed in the opening. A second metal nitride layer is provided between the electrically conductive pattern and the nitrified first metal layer.
摘要翻译：形成电互连的方法包括：在半导体衬底上形成第一电绝缘层，然后在第一电绝缘层中形成开口。进行步骤以使开口的侧壁与其中具有不均匀氮浓度的硝化的第一金属层一起排列。在开口中形成导电图案。第二金属氮化物层设置在导电图案和硝化的第一金属层之间。

16. 发明申请

US20070128866A1 APPARATUS FOR FABRICATING TUNGSTEN CONTACTS WITH TUNGSTEN NITRIDE BARRIER LAYERS IN SEMICONDUCTOR DEVICES 审中-公开
标题翻译：用于在半导体器件中制备硝酸银掩模层的触摸触点的装置
公开(公告)号：US20070128866A1
公开(公告)日：2007-06-07
申请号：US11671779
申请日：2007-02-06
申请人： Sang-Woo Lee , Gil-Heyun Choi , Jong-Myeong Lee , Kyung-In Choi
发明人： Sang-Woo Lee , Gil-Heyun Choi , Jong-Myeong Lee , Kyung-In Choi
IPC分类号： H01L21/44 , C23C16/00
CPC分类号： H01L21/76843 , H01L21/28562 , H01L21/76864
摘要： A method forming a tungsten contact can include forming a contact hole in an interlayer dielectric layer to expose a portion of an underlying silicon based substrate and to form a side wall of the contact hole. A tungsten silicide layer can be formed on at least on the exposed portion of the substrate. A tungsten nitride layer can be conformally formed on a surface of the interlayer dielectric layer, on the tungsten silicide layer and on the side wall. A contact tungsten layer can be formed on the tungsten nitride layer to fill the contact hole. Related apparatus and contacts are also disclosed.
摘要翻译：形成钨接触的方法可以包括在层间电介质层中形成接触孔以暴露下面的硅基衬底的一部分并形成接触孔的侧壁。至少在衬底的暴露部分上可以形成硅化钨层。氮化钨层可以共形地形成在层间电介质层的表面上，硅化钨层和侧壁上。可以在氮化钨层上形成接触钨层以填充接触孔。还公开了相关装置和接触。

17. 发明授权

US07189641B2 Methods of fabricating tungsten contacts with tungsten nitride barrier layers in semiconductor devices, tungsten contacts with tungsten nitride barrier layers 失效
标题翻译：在半导体器件中制造与钨氮化物阻挡层的钨接触的方法，钨与氮化钨阻挡层接触
公开(公告)号：US07189641B2
公开(公告)日：2007-03-13
申请号：US10920482
申请日：2004-08-18
申请人： Sang-Woo Lee , Gil-Heyun Choi , Jong-Myeong Lee , Kyung-In Choi
发明人： Sang-Woo Lee , Gil-Heyun Choi , Jong-Myeong Lee , Kyung-In Choi
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/28562 , H01L21/76864
摘要： A method forming a tungsten contact can include forming a contact hole in an interlayer dielectric layer to expose a portion of an underlying silicon based substrate and to form a side wall of the contact hole. A tungsten silicide layer can be formed on at least on the exposed portion of the substrate. A tungsten nitride layer can be conformally formed on a surface of the interlayer dielectric layer, on the tungsten silicide layer and on the side wall. A contact tungsten layer can be formed on the tungsten nitride layer to fill the contact hole. Related apparatus and contacts are also disclosed.
摘要翻译：形成钨接触的方法可以包括在层间电介质层中形成接触孔以暴露下面的硅基衬底的一部分并形成接触孔的侧壁。至少在衬底的暴露部分上可以形成硅化钨层。氮化钨层可以共形地形成在层间电介质层的表面上，硅化钨层和侧壁上。可以在氮化钨层上形成接触钨层以填充接触孔。还公开了相关装置和接触。

18. 发明申请

US20060280867A1 Apparatus and method for depositing tungsten nitride 审中-公开
标题翻译：氮化钨沉积设备和方法
公开(公告)号：US20060280867A1
公开(公告)日：2006-12-14
申请号：US11361087
申请日：2006-02-22
申请人： Jin-Ho Park , Seong-Hwee Cheong , Gil-Heyun Choi , Sang-Woo Lee
发明人： Jin-Ho Park , Seong-Hwee Cheong , Gil-Heyun Choi , Sang-Woo Lee
IPC分类号： C23C16/00
CPC分类号： C23C16/34 , C23C16/4408 , C23C16/45561
摘要： An apparatus for depositing a thin film on a substrate includes a processing chamber, supply pipes, and discharge pipes. Each supply pipe is configured to supply a process gas to the processing chamber, and each discharge pipe is connected to one of the supply pipes and an inhale part configured to discharge gas remaining inside the one of the supply pipes. Each of the discharge pipes is separate from one another.
摘要翻译：用于在基板上沉积薄膜的设备包括处理室，供应管和排出管。每个供给管被构造成将处理气体供给到处理室，并且每个排出管连接到供应管中的一个和被配置为排出剩余在供给管内的气体的吸入部。每个排放管彼此分开。

19. 发明申请

US20050182950A1 Network security system and method 审中-公开
标题翻译：网络安全系统和方法
公开(公告)号：US20050182950A1
公开(公告)日：2005-08-18
申请号：US10962560
申请日：2004-10-13
申请人： So-Ra Son , Yeon-Sik Ryu , Seung-Jong Pyo , Sang-Woo Lee , O-Young Hong
发明人： So-Ra Son , Yeon-Sik Ryu , Seung-Jong Pyo , Sang-Woo Lee , O-Young Hong
IPC分类号： H04L12/66 , H04L9/32 , H04L12/22 , H04L12/24 , H04L29/06
CPC分类号： H04L63/0209 , H04L63/0227 , H04L63/1416
摘要： Disclosed herein is a network security system and method. The network security system includes a packet-dedicated processor for primarily performing hardware filtering on static attacks of network traffic, and a host system provided with a software filter for secondarily performing software filtering on dynamic attacks of network traffic. In the network security method, hardware filtering is performed on static network traffic attacks, software filtering is performed on dynamic network traffic attacks based on an analysis the results of the hardware filtering and packet streams generated by incoming packets for a predetermined time, and intrusion prevention information is provided to an administrator based on the accumulation and an analysis of the results of the software filtering.
摘要翻译：这里公开了一种网络安全系统和方法。网络安全系统包括主要针对网络流量的静态攻击执行硬件过滤的分组专用处理器，以及具有软件过滤器的主机系统，用于对网络流量的动态攻击进行二次软件过滤。在网络安全方法中，对静态网络流量攻击进行硬件过滤，根据硬件过滤的结果和输入报文生成的预定时间内的数据包流分析，对入侵防御进行了动态网络流量攻击软件过滤基于累积和对软件过滤结果的分析，向管理员提供信息。

20. 发明授权

US06225753B1 Electronic ballast that is controlled by the operation of a shared switch 有权
标题翻译：电子镇流器由共享开关的操作控制
公开(公告)号：US06225753B1
公开(公告)日：2001-05-01
申请号：US09483915
申请日：2000-01-17
申请人： Sang-Woo Lee
发明人： Sang-Woo Lee
IPC分类号： H05B3700
CPC分类号： H05B41/28 , H05B41/282
摘要： Disclosed is an electronic ballast that comprises a rectifier receiving and rectifying the alternating current (AC) power and outputting a result; a first converter receiving the output current of the rectifier and changing levels of the voltage by the on and off operations of a first switch and outputting the result; a half bridge converter coupled to the first converter in parallel and comprising a first and second switches shared with the first converter, and receiving the output current of the first converter and changing the directions of the current flow according to the status of the first and second switches by the on and off operations of the second switch; and a resonance circuit, coupled to the half bridge converter, resonating the output current of the half bridge converter and converting the current into sine wave current and outputting the current to a discharge lamp. The ballast according to the present invention decreases production costs and increases the efficiency of energy transfer.
摘要翻译：公开了一种电子镇流器，其包括整流器，接收并整流交流电（AC）电力并输出结果; 接收整流器的输出电流的第一转换器，通过第一开关的接通和断开操作来改变电压电平并输出结果; 半桥转换器并联连接到第一转换器，并且包括与第一转换器共享的第一和第二开关，以及接收第一转换器的输出电流并根据第一和第二转换器的状态改变电流的方向通过第二开关的开和关操作切换; 以及耦合到半桥转换器的谐振电路，谐振半桥转换器的输出电流并将电流转换成正弦波电流并将电流输出到放电灯。根据本发明的镇流器降低了生产成本并提高了能量转移的效率。

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