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11. 发明授权

US08928055B2 Magnetic memory element 有权
标题翻译：磁记忆元件
公开(公告)号：US08928055B2
公开(公告)日：2015-01-06
申请号：US13601343
申请日：2012-08-31
申请人： Daisuke Saida , Minoru Amano , Junichi Ito
发明人： Daisuke Saida , Minoru Amano , Junichi Ito
IPC分类号： H01L27/22 , G11C11/15
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , H01L27/228 , H01L43/12
摘要： According to one embodiment, a magnetic memory element includes a stacked body and a conductive shield. The stacked body includes first and second stacked units. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. The first ferromagnetic layer has a fixed magnetization in a first direction. A magnetization direction of the second ferromagnetic layer is variable in a second direction. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit includes a third ferromagnetic layer stacked with the first stacked unit in a stacking direction of the first stacked unit. A magnetization direction of the third ferromagnetic layer is variable in a third direction. The conductive shield is opposed to at least a part of a side surface of the second stacked unit. An electric potential of the conductive shield is controllable.
摘要翻译：根据一个实施例，磁存储元件包括堆叠体和导电屏蔽。堆叠体包括第一和第二堆叠单元。第一堆叠单元包括第一和第二铁磁层和第一非磁性层。第一铁磁层在第一方向上具有固定的磁化强度。第二铁磁层的磁化方向在第二方向上是可变的。第一非磁性层设置在第一和第二铁磁层之间。第二堆叠单元包括在第一堆叠单元的层叠方向上与第一堆叠单元堆叠的第三铁磁层。第三铁磁层的磁化方向在第三方向上是可变的。导电屏蔽与第二堆叠单元的侧表面的至少一部分相对。导电屏蔽层的电位是可控的。

12. 发明申请

US20130249024A1 MAGNETIC MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE 有权
标题翻译：磁记忆元件和非易失性存储器件
公开(公告)号：US20130249024A1
公开(公告)日：2013-09-26
申请号：US13601343
申请日：2012-08-31
申请人： Daisuke SAIDA , Minoru Amano , Junichi Ito
发明人： Daisuke SAIDA , Minoru Amano , Junichi Ito
IPC分类号： H01L43/06
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , H01L27/228 , H01L43/12
摘要： According to one embodiment, a magnetic memory element includes a stacked body and a conductive shield. The stacked body includes first and second stacked units. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. The first ferromagnetic layer has a fixed magnetization in a first direction. A magnetization direction of the second ferromagnetic layer is variable in a second direction. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit includes a third ferromagnetic layer stacked with the first stacked unit in a stacking direction of the first stacked unit. A magnetization direction of the third ferromagnetic layer is variable in a third direction. The conductive shield is opposed to at least a part of a side surface of the second stacked unit. An electric potential of the conductive shield is controllable.
摘要翻译：根据一个实施例，磁存储元件包括堆叠体和导电屏蔽。堆叠体包括第一和第二堆叠单元。第一堆叠单元包括第一和第二铁磁层和第一非磁性层。第一铁磁层在第一方向上具有固定的磁化强度。第二铁磁层的磁化方向在第二方向上是可变的。第一非磁性层设置在第一和第二铁磁层之间。第二堆叠单元包括在第一堆叠单元的层叠方向上与第一堆叠单元堆叠的第三铁磁层。第三铁磁层的磁化方向在第三方向上是可变的。导电屏蔽与第二堆叠单元的侧表面的至少一部分相对。导电屏蔽层的电位是可控的。

13. 发明授权

US08582355B2 Magnetic memory element and nonvolatile memory device 失效
标题翻译：磁存储元件和非易失性存储器件
公开(公告)号：US08582355B2
公开(公告)日：2013-11-12
申请号：US13416408
申请日：2012-03-09
申请人： Daisuke Saida , Minoru Amano , Junichi Ito
发明人： Daisuke Saida , Minoru Amano , Junichi Ito
IPC分类号： G11C11/15 , G11C11/16
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. A magnetization of the first ferromagnetic layer is fixed in a direction perpendicular to the first ferromagnetic layer. A magnetization of the second ferromagnetic layer is variable. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit stacked with the first stacked unit includes third and fourth ferromagnetic layers and a second nonmagnetic layer. A magnetization of the third ferromagnetic layer is variable. The fourth ferromagnetic layer is stacked with the third ferromagnetic layer. A magnetization of the fourth ferromagnetic layer is fixed in a direction perpendicular to the fourth ferromagnetic layer. The second nonmagnetic layer is provided between the third and fourth ferromagnetic layers.
摘要翻译：根据一个实施例，磁存储元件包括包括第一和第二堆叠单元的堆叠体。第一堆叠单元包括第一和第二铁磁层和第一非磁性层。第一铁磁层的磁化在垂直于第一铁磁层的方向固定。第二铁磁层的磁化是可变的。第一非磁性层设置在第一和第二铁磁层之间。与第一堆叠单元堆叠的第二堆叠单元包括第三和第四铁磁层和第二非磁性层。第三铁磁层的磁化是可变的。第四铁磁层与第三铁磁层层叠。第四铁磁层的磁化在垂直于第四铁磁层的方向固定。第二非磁性层设置在第三和第四铁磁层之间。

14. 发明授权

US08420499B2 Concave-convex pattern forming method and magnetic tunnel junction element forming method 有权
标题翻译：凹凸图案形成方法和磁隧道结元件形成方法
公开(公告)号：US08420499B2
公开(公告)日：2013-04-16
申请号：US13300062
申请日：2011-11-18
申请人： Tomotaka Ariga , Yuichi Ohsawa , Junichi Ito , Yoshinari Kurosaki , Saori Kashiwada , Toshiro Hiraoka , Minoru Amano , Satoshi Yanagi
发明人： Tomotaka Ariga , Yuichi Ohsawa , Junichi Ito , Yoshinari Kurosaki , Saori Kashiwada , Toshiro Hiraoka , Minoru Amano , Satoshi Yanagi
IPC分类号： H01L21/76
CPC分类号： G11B5/855 , H01L21/0337 , H01L21/31116 , H01L21/31122
摘要： A method of forming a concave-convex pattern according to an embodiment includes: forming a guide pattern on a base material, the guide pattern having a convex portion; forming a formative layer on the guide pattern, the formative layer including a stacked structure formed by stacking a first layer and a second layer, the first layer including at least one element selected from a first metal element and a metalloid element, the second layer including a second metal element different from the first metal element; selectively leaving the formative layer only at side faces of the convex portions by performing etching on the formative layer; removing the guide pattern; and forming the concave-convex pattern in the base material by performing etching on the base material, with the remaining formative layer being used as a mask.
摘要翻译：根据实施例的形成凹凸图案的方法包括：在基材上形成引导图案，所述引导图案具有凸部; 在引导图案上形成形成层，所述形成层包括通过层叠第一层和第二层而形成的层叠结构，所述第一层包括选自第一金属元素和准金属元素中的至少一种元素，所述第二层包括与第一金属元件不同的第二金属元件; 通过在形成层上进行蚀刻，仅选择性地离开形成层在凸部的侧面; 去除引导图案; 并且通过在基材上进行蚀刻，将其余形成层用作掩模，在基材中形成凹凸图案。

15. 发明申请

US20120115250A1 CONCAVE-CONVEX PATTERN FORMING METHOD AND MAGNETIC TUNNEL JUNCTION ELEMENT FORMING METHOD 有权
标题翻译：凹凸图案形成方法和磁性隧道结构元素形成方法
公开(公告)号：US20120115250A1
公开(公告)日：2012-05-10
申请号：US13300062
申请日：2011-11-18
申请人： Tomotaka Ariga , Yuichi Ohsawa , Junichi Ito , Yoshinari Kurosaki , Saori Kashiwada , Toshiro Hiraoka , Minoru Amano , Satoshi Yanagi
发明人： Tomotaka Ariga , Yuichi Ohsawa , Junichi Ito , Yoshinari Kurosaki , Saori Kashiwada , Toshiro Hiraoka , Minoru Amano , Satoshi Yanagi
IPC分类号： H01L21/02 , H01L21/28
CPC分类号： G11B5/855 , H01L21/0337 , H01L21/31116 , H01L21/31122
摘要： A method of forming a concave-convex pattern according to an embodiment includes: forming a guide pattern on a base material, the guide pattern having a convex portion; forming a formative layer on the guide pattern, the formative layer including a stacked structure formed by stacking a first layer and a second layer, the first layer including at least one element selected from a first metal element and a metalloid element, the second layer including a second metal element different from the first metal element; selectively leaving the formative layer only at side faces of the convex portions by performing etching on the formative layer; removing the guide pattern; and forming the concave-convex pattern in the base material by performing etching on the base material, with the remaining formative layer being used as a mask.
摘要翻译：根据实施例的形成凹凸图案的方法包括：在基材上形成引导图案，所述引导图案具有凸部; 在引导图案上形成形成层，所述形成层包括通过层叠第一层和第二层而形成的层叠结构，所述第一层包括选自第一金属元素和准金属元素中的至少一种元素，所述第二层包括与第一金属元件不同的第二金属元件; 通过在形成层上进行蚀刻，仅选择性地离开形成层在凸部的侧面; 去除引导图案; 并且通过在基材上进行蚀刻，将其余形成层用作掩模，在基材中形成凹凸图案。

16. 发明授权

US08710605B2 Magnetic memory and method of manufacturing the same 有权
标题翻译：磁存储器及其制造方法
公开(公告)号：US08710605B2
公开(公告)日：2014-04-29
申请号：US13231894
申请日：2011-09-13
申请人： Shigeki Takahashi , Yuichi Ohsawa , Junichi Ito , Chikayoshi Kamata , Saori Kashiwada , Minoru Amano , Hiroaki Yoda
发明人： Shigeki Takahashi , Yuichi Ohsawa , Junichi Ito , Chikayoshi Kamata , Saori Kashiwada , Minoru Amano , Hiroaki Yoda
IPC分类号： H01L29/72
CPC分类号： H01L43/12 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetic memory according to an embodiment includes: at least one memory cell comprising a magnetoresistive element as a memory element, and first and second electrodes that energize the magnetoresistive element. The magnetoresistive element includes: a first magnetic layer having a variable magnetization direction perpendicular to a film plane; a tunnel barrier layer on the first magnetic layer; and a second magnetic layer on the tunnel barrier layer, and having a fixed magnetization direction perpendicular to the film plane. The first magnetic layer including: a first region; and a second region outside the first region so as to surround the first region, and having a smaller perpendicular magnetic anisotropy energy than that of the first region. The second magnetic layer including: a third region; and a fourth region outside the third region, and having a smaller perpendicular magnetic anisotropy energy than that of the third region.
摘要翻译：根据实施例的磁存储器包括：包括作为存储元件的磁阻元件的至少一个存储单元，以及激励磁阻元件的第一和第二电极。磁阻元件包括：具有与膜平面垂直的可变磁化方向的第一磁性层; 在第一磁性层上的隧道阻挡层; 以及隧道势垒层上的第二磁性层，并且具有与膜平面垂直的固定的磁化方向。所述第一磁性层包括：第一区域; 以及围绕第一区域的第一区域外的第二区域，并且具有比第一区域小的垂直磁各向异性能量。第二磁性层包括：第三区域; 以及第三区域外的第四区域，并且具有比第三区域小的垂直磁各向异性能量。

17. 发明授权

US09166065B2 Magnetoresistive effect element, magnetic memory, and magnetoresistive effect element manufacturing method 有权
标题翻译：磁阻效应元件，磁存储器和磁阻效应元件制造方法
公开(公告)号：US09166065B2
公开(公告)日：2015-10-20
申请号：US13419011
申请日：2012-03-13
申请人： Yuichi Ohsawa , Tadaomi Daibou , Yushi Kato , Eiji Kitagawa , Saori Kashiwada , Minoru Amano , Junichi Ito
发明人： Yuichi Ohsawa , Tadaomi Daibou , Yushi Kato , Eiji Kitagawa , Saori Kashiwada , Minoru Amano , Junichi Ito
IPC分类号： H01L29/82 , H01L43/08 , H01L43/10 , H01L27/22 , H01F10/12 , H01F10/32 , H01F41/30 , B82Y40/00 , G11C11/16
CPC分类号： H01L29/82 , B82Y40/00 , G11C11/161 , H01F10/126 , H01F10/3286 , H01F41/303 , H01L27/228 , H01L43/08 , H01L43/10
摘要： According to one embodiment, a magnetoresistive effect element includes a first magnetic film having magnetic anisotropy and an invariable magnetization direction in a direction perpendicular to a film plane, a second magnetic film having magnetic anisotropy and a variable magnetization direction in the direction perpendicular to the film plane, and a nonmagnetic film between the first magnetic film and the second magnetic film. At least one of the first and second magnetic films includes a first magnetic layer. The first magnetic layer includes a rare earth metal, a transition metal, and boron.
摘要翻译：根据一个实施例，磁阻效应元件包括在垂直于膜平面的方向上具有磁各向异性和不变磁化方向的第一磁性膜，在垂直于膜的方向上具有磁各向异性和可变磁化方向的第二磁性膜平面和第一磁性膜与第二磁性膜之间的非磁性膜。第一和第二磁性膜中的至少一个包括第一磁性层。第一磁性层包括稀土金属，过渡金属和硼。

18. 发明申请

US20130069182A1 MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND MAGNETORESISTIVE EFFECT ELEMENT MANUFACTURING METHOD 有权
标题翻译：磁阻效应元件，磁记忆和磁阻效应元件制造方法
公开(公告)号：US20130069182A1
公开(公告)日：2013-03-21
申请号：US13419011
申请日：2012-03-13
申请人： Yuichi OHSAWA , Tadaomi Daibou , Yushi Kato , Eiji Kitagawa , Saori Kashiwada , Minoru Amano , Junichi Ito
发明人： Yuichi OHSAWA , Tadaomi Daibou , Yushi Kato , Eiji Kitagawa , Saori Kashiwada , Minoru Amano , Junichi Ito
IPC分类号： H01L29/82 , H01L21/8246
CPC分类号： H01L29/82 , B82Y40/00 , G11C11/161 , H01F10/126 , H01F10/3286 , H01F41/303 , H01L27/228 , H01L43/08 , H01L43/10
摘要： According to one embodiment, a magnetoresistive effect element includes a first magnetic film having magnetic anisotropy and an invariable magnetization direction in a direction perpendicular to a film plane, a second magnetic film having magnetic anisotropy and a variable magnetization direction in the direction perpendicular to the film plane, and a nonmagnetic film between the first magnetic film and the second magnetic film. At least one of the first and second magnetic films includes a first magnetic layer. The first magnetic layer includes a rare earth metal, a transition metal, and boron.
摘要翻译：根据一个实施例，磁阻效应元件包括在垂直于膜平面的方向上具有磁各向异性和不变磁化方向的第一磁性膜，在垂直于膜的方向上具有磁各向异性和可变磁化方向的第二磁性膜平面和第一磁性膜与第二磁性膜之间的非磁性膜。第一和第二磁性膜中的至少一个包括第一磁性层。第一磁性层包括稀土金属，过渡金属和硼。

19. 发明授权

US08879307B2 Magnetoresistive device and nonvolatile memory with the same 有权
标题翻译：磁阻器件与非易失性存储器相同
公开(公告)号：US08879307B2
公开(公告)日：2014-11-04
申请号：US13424769
申请日：2012-03-20
申请人： Eiji Kitagawa , Naoharu Shimomura , Hiroaki Yoda , Junichi Ito , Minoru Amano , Chikayoshi Kamata , Keiko Abe
发明人： Eiji Kitagawa , Naoharu Shimomura , Hiroaki Yoda , Junichi Ito , Minoru Amano , Chikayoshi Kamata , Keiko Abe
IPC分类号： G11C11/00 , G11C11/16 , G11C19/08
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0808
摘要： A magnetoresistive device of an embodiment includes: first and second devices each including, a first magnetic layer having a changeable magnetization perpendicular to a film plane, a second magnetic layer having a fixed and perpendicular magnetization, and a nonmagnetic layer interposed between the first and second magnetic layers, the first and second devices being disposed in parallel on a first face of an interconnect layer; and a TMR device including a third magnetic layer having perpendicular magnetic anisotropy and having a changeable magnetization, a fourth magnetic layer having a fixed magnetization parallel to a film plane, and a tunnel barrier layer interposed between the third and fourth magnetic layers, the TMR device being disposed on a second face of the interconnect layer, and the third magnetic layer being magnetostatically coupled to the first magnetic layers of the first and second devices.
摘要翻译：实施例的磁阻装置包括：第一和第二装置，每个包括：具有垂直于膜平面的可变磁化的第一磁性层，具有固定和垂直磁化的第二磁性层，以及介于第一和第二磁化层之间的非磁性层磁性层，所述第一和第二装置平行布置在互连层的第一面上; 以及包括具有垂直磁各向异性并且具有可变磁化的第三磁性层的TMR器件，具有与膜平面平行的固定磁化强度的第四磁性层和介于第三和第四磁性层之间的隧道势垒层，TMR器件布置在所述互连层的第二面上，并且所述第三磁性层被静磁耦合到所述第一和第二器件的第一磁性层。

20. 发明申请

US20120241881A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20120241881A1
公开(公告)日：2012-09-27
申请号：US13310154
申请日：2011-12-02
申请人： Tadaomi DAIBOU , Junichi Ito , Tadashi Kai , Minoru Amano , Hiroaki Yoda , Terunobu Miyazaki , Shigemi Mizukami , Koji Ando , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Akio Fukushima , Taro Nagahama , Takahide Kubota
发明人： Tadaomi DAIBOU , Junichi Ito , Tadashi Kai , Minoru Amano , Hiroaki Yoda , Terunobu Miyazaki , Shigemi Mizukami , Koji Ando , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Akio Fukushima , Taro Nagahama , Takahide Kubota
IPC分类号： H01L43/10
CPC分类号： H01L43/10 , H01L23/528 , H01L27/222 , H01L27/226 , H01L43/02 , H01L43/08 , H01L2924/0002 , H01L2924/00
摘要： A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45≦x
摘要翻译：根据实施例的磁阻元件包括：基底层; 第一磁性层，其形成在所述基底层上，并且包括在垂直于膜平面的方向上具有容易磁化的轴的第一磁性膜，所述第一磁性膜包括Mn x Ga 100-x（45≤n1E; x <64原子％）; 形成在第一磁性层上的第一非磁性层; 以及形成在所述第一非磁性层上的第二磁性层，并且包括在垂直于膜平面的方向上具有容易磁化的轴的第二磁性膜，所述第二磁性膜包括MnyGa100-y（45＆lt; IL1; y <64原子％），。第一和第二磁性层包括彼此不同的Mn组成比，第一磁性层的磁化方向可以通过第一非磁性层在第一磁性层和第二磁性层之间流动的电流而改变。

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