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    • 11. 发明授权
    • Multi-channel semiconductor integrated circuit
    • 多通道半导体集成电路
    • US07759987B2
    • 2010-07-20
    • US12048895
    • 2008-03-14
    • Naoki HishikawaHiroki MatsunagaJinsaku Kaneda
    • Naoki HishikawaHiroki MatsunagaJinsaku Kaneda
    • H03B1/00
    • H03K3/35613
    • A semiconductor integrated circuit includes a high-side transistor, a low-side transistor, a level shift circuit for driving the high-side transistor, and a pre-driver circuit for driving the low-side transistor. A connection point of the high-side transistor and the low-side transistor serves as an output terminal. The level shift circuit has first and second N-type MOS transistors whose gates are driven by the pre-driver circuit. The semiconductor integrated circuit further includes a diode whose anode is connected to the drain of the first or second N-type MOS transistor to which the gate of the high-side transistor is not connected, and whose cathode is connected to the output terminal.
    • 半导体集成电路包括高侧晶体管,低侧晶体管,用于驱动高侧晶体管的电平移位电路和用于驱动低侧晶体管的预驱动电路。 高侧晶体管和低侧晶体管的连接点用作输出端子。 电平移位电路具有第一和第二N型MOS晶体管,其栅极由预驱动器电路驱动。 半导体集成电路还包括其阳极连接到第一或第二N型MOS晶体管的漏极的二极管,高侧晶体管的栅极未连接到该漏极,并且其阴极连接到输出端子。
    • 13. 发明授权
    • Semiconductor integrated circuit device
    • 半导体集成电路器件
    • US07495296B2
    • 2009-02-24
    • US11139590
    • 2005-05-31
    • Eisaku MaedaAkihiro MaejimaHiroki MatsunagaJinsaku KanedaMasahiko Sasada
    • Eisaku MaedaAkihiro MaejimaHiroki MatsunagaJinsaku KanedaMasahiko Sasada
    • H01L29/94
    • H01L27/11803H01L2924/0002H01L2924/00
    • The present invention relates to a layout of a multi-channel semiconductor integrated circuit and provides a layout of a semiconductor integrated circuit having ternary circuits in order to increase a degree of integration in the semiconductor integrated circuit and stabilize output characteristics. A ternary circuit is formed by arranging a second high-side transistor, a diode, a second level shift circuit on one hand, and a low-side transistor, a first high-side transistor, a first level shift circuit, and a pre-driver on the other, so that each of cells are arranged in a row and an output bonding pad is placed between the second high-side transistor and the low-side transistor, wherein a cell width of the first level shift circuit, second level shift circuit and pre-driver corresponds to a cell width of the low-side transistor.
    • 本发明涉及多通道半导体集成电路的布局,并提供具有三元电路的半导体集成电路的布局,以增加半导体集成电路中的集成度并稳定输出特性。 一方面通过布置第二高侧晶体管,二极管,第二电平移位电路和低端晶体管,第一高侧晶体管,第一电平移位电路和预置电路来形成三元电路, 驱动器,使得每个单元排列成一行,并且输出接合焊盘放置在第二高侧晶体管和低侧晶体管之间,其中第一电平移位电路的单元宽度,第二电平移位 电路和预驱动器对应于低侧晶体管的单元宽度。
    • 14. 发明授权
    • Magnetic head suspension with a lift tab
    • 带抬头的磁头悬挂
    • US07365945B2
    • 2008-04-29
    • US11050447
    • 2005-02-04
    • Yasuo FujimotoSatoru TakasugiHiroki Matsunaga
    • Yasuo FujimotoSatoru TakasugiHiroki Matsunaga
    • G11B5/54
    • G11B5/4826G11B5/4833
    • There is provided a magnetic head suspension including: a flexure portion which has a magnetic head mount area for supporting a magnetic head slider; a load bend portion which generates a load for pressing the magnetic head slider to a storage surface of a storage medium; a load beam portion which transmits the load to the magnetic head mount area; and a base portion which supports a base end region of the load bend portion. The load beam portion integrally includes a body in which at least a tip end portion thereof extends along a first plane approximately in parallel with the storage surface of the storage medium, and a lift tab extending forward from the tip end portion. The lift tab includes an engaging portion extending along a second plane which is approximately in parallel with the first plane and is positioned upper than the first plane so as to be spaced apart from the storage surface of the storage medium, and an inclined portion extending between the tip end portion of the body and the engaging portion. The load beam portion further includes a pair of flanges on both side edges in a width direction. The pair of side edges are positioned at least over the tip end portion and the inclined portion.
    • 提供了一种磁头悬架,包括:挠曲部分,其具有用于支撑磁头滑块的磁头安装区域; 负载弯曲部,其产生用于将磁头滑块按压到存储介质的存储表面的负载; 负载梁部,其将负载传递到磁头安装区域; 以及支撑负载弯曲部的基端部的基部。 负载梁部分一体地包括主体,其中至少其末端部分沿着与存储介质的存储表面大致平行的第一平面延伸,以及从顶端部向前延伸的提升片。 提升片包括沿着与第一平面大致平行的第二平面延伸并且定位在第一平面上方以与存储介质的存储表面间隔开的接合部分和在存储介质的存储表面之间延伸的倾斜部分 主体的前端部和接合部。 负载梁部分还包括在宽度方向上的两个侧边缘上的一对凸缘。 一对侧边缘至少位于前端部分和倾斜部分之上。
    • 18. 发明授权
    • Driver circuit
    • 驱动电路
    • US07323923B2
    • 2008-01-29
    • US11211638
    • 2005-08-26
    • Eisaku MaedaHiroshi AndoJinsaku KanedaAkihiro MaejimaHiroki Matsunaga
    • Eisaku MaedaHiroshi AndoJinsaku KanedaAkihiro MaejimaHiroki Matsunaga
    • H03L5/00
    • H03K3/356113G09G3/296G09G2330/04H03K3/012H03K19/0013
    • A driver circuit is provided for preventing generation of a pass-through current in a CMOS output unit even if a power supply voltage VDD supplied from a low voltage power supply drops below a recommended operating power supply voltage. The driver circuit includes a level shift unit having PMOS transistors and NMOS transistors, and a CMOS output unit having a PMOS transistor and an NMOS transistor. The source, drain and gate of one PMOS transistor are respectively connected to a high voltage power supply, a first contact and a second contact. The source, drain and gate of a second PMOS transistor are respectively connected to a high voltage power supply, the second contact and the first contact. The source of one NMOS transistor is grounded, the drain thereof is connected to the first contact, and the gate thereof receives a low voltage signal. The source of a second NMOS transistor is grounded, the drain thereof is connected to the second contact, and the gate thereof receives a low voltage signal. In this driver circuit, the driving current of the one PMOS transistor is higher than the driving current of the one NMOS transistor.
    • 即使从低电压电源提供的电源电压VDD低于推荐的工作电源电压,也提供用于防止在CMOS输出单元中产生通过电流的驱动电路。 驱动器电路包括具有PMOS晶体管和NMOS晶体管的电平移位单元和具有PMOS晶体管和NMOS晶体管的CMOS输出单元。 一个PMOS晶体管的源极,漏极和栅极分别连接到高压电源,第一触点和第二触点。 第二PMOS晶体管的源极,漏极和栅极分别连接到高压电源,第二触点和第一触点。 一个NMOS晶体管的源极接地,其漏极连接到第一触点,其栅极接收低电压信号。 第二NMOS晶体管的源极接地,其漏极连接到第二触点,并且其栅极接收低电压信号。 在该驱动电路中,一个PMOS晶体管的驱动电流高于一个NMOS晶体管的驱动电流。
    • 20. 发明授权
    • Stepping motor drive device and method
    • 步进电机驱动装置及方法
    • US06906489B2
    • 2005-06-14
    • US10793342
    • 2004-03-05
    • Shingo FukamizuHiroki Matsunaga
    • Shingo FukamizuHiroki Matsunaga
    • H02P8/12H02P8/16H02P8/20H02P8/32
    • H02P8/20H02P8/16
    • A reference signal generation unit generates a reference signal VCA showing a current limit value with a staircase waveform. A PWM control unit compares a measurement signal SENA obtained by a coil current measurement unit with the reference signal VCA at intervals of a PWM timing signal generated by a PWM timing signal generation unit, and switches transistors of a bridge rectification circuit ON and OFF according to the comparison, thereby PWM controlling a supply current to a coil. A discharge instruction signal generation unit issues a discharge instruction signal MMCPA when the reference signal VCA decreases. In response, a PWM control unit forms a current path in the bridge rectification circuit to cause a regenerative current to flow back into a power supply and capacitor.
    • 参考信号生成单元生成表示具有阶梯波形的电流限制值的基准信号VCA。 PWM控制单元将由线圈电流测量单元获得的测量信号SENA与由PWM定时信号生成单元生成的PWM定时信号的间隔与参考信号VCA进行比较,并且根据 进行比较,从而PWM控制到线圈的电源电流。 当参考信号VCA减小时,放电指令信号产生单元发出放电指令信号MMCPA。 作为响应,PWM控制单元在桥式整流电路中形成电流路径,以使再生电流回流到电源和电容器中。