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    • 16. 发明申请
    • Variable capacity rotary compressor
    • 可变容量旋转压缩机
    • US20050019193A1
    • 2005-01-27
    • US10832348
    • 2004-04-27
    • In LeeSung ChoSeung LeeCheol Kim
    • In LeeSung ChoSeung LeeCheol Kim
    • F04C18/356F04C23/00F04C28/04F04C28/10F04C29/00F03C2/00F01C21/00
    • F04C28/10F04C18/3564F04C23/001F04C23/008F04C28/04
    • A variable capacity rotary compressor to prevent an eccentric bush and a locking pin from being deformed or worn out due to a variance in a pressure of a compression chamber as a rotating shaft rotates. The compressor includes upper and lower compression chambers having different interior capacities thereof, and a rotating shaft. Upper and lower eccentric cams are provided on the rotating shaft to be eccentric from the rotating shaft in a common direction. Upper and lower eccentric bushes are fitted over the upper and lower eccentric cams, respectively, with a slot provided at a position between the upper and lower eccentric bushes. The locking pin operates to change a position of the upper or lower eccentric bush to a maximum eccentric position. Further, surfaces of parts around first and second ends of the slot are heat-treated, thus increasing a hardness thereof.
    • 用于防止偏心衬套和锁定销由于作为旋转轴的压缩室的压力变化而变形或磨损的可变容量的旋转压缩机旋转。 压缩机包括具有不同内部容量的上压缩室和下压缩室以及旋转轴。 上偏心凸轮和下偏心凸轮设置在旋转轴上,以沿共同的方向与旋转轴偏心。 上下偏心衬套分别安装在上偏心凸轮和下偏心凸轮上,其中一个槽设置在上下偏心衬套之间的位置。 锁定销操作以将上偏心衬套或下偏心衬套的位置改变到最大偏心位置。 此外,槽周围的第一和第二端部分的表面被热处理,从而增加其硬度。
    • 18. 发明申请
    • Method of manufacturing flash memory device
    • 制造闪存设备的方法
    • US20070181916A1
    • 2007-08-09
    • US11478794
    • 2006-06-30
    • In LeeMyung Ahn
    • In LeeMyung Ahn
    • H01L31/112H01L29/80
    • H01L27/105H01L27/11526H01L27/11543
    • A method of manufacturing a flash memory device, one embodiment of which includes the steps of forming a floating gate pattern in which a tunnel oxide film, a first conductive layer, and a nitride film are laminated on a semiconductor substrate of a first region, and forming isolation films on the semiconductor substrate of a second region; stripping the nitride film and then etching the isolation films to a predetermined thickness by a dry etch process; and, sequentially forming a dielectric film, a second conductive layer, and a hard mask film on the entire structure, patterning the hard mask film to form a control gate, and etching the floating gate pattern using the control gate as a mask, thus forming a floating gate. After the nitride film serving as the etch mask for forming the trenches is stripped, the etch process of the isolation films for controlling an EFH is performed under the conditions in which the isolation films are etched while the conductive layer is not etched. Accordingly, damage to lateral and upper portions of the conductive layer for the floating gate can be prevented, the occurrence of moat at the peri region can be prevented, and the reliability of devices can be improved accordingly.
    • 一种闪速存储器件的制造方法,其一个实施例包括以下步骤:在第一区域的半导体衬底上层叠隧道氧化物膜,第一导电层和氮化物膜的浮栅图案,以及 在第二区域的半导体衬底上形成隔离膜; 剥离氮化物膜,然后通过干蚀刻工艺将隔离膜蚀刻到预定厚度; 并且在整个结构上依次形成电介质膜,第二导电层和硬掩模膜,图案化硬掩模膜以形成控制栅极,并使用控制栅极作为掩模蚀刻浮栅图案,从而形成 一个浮动门。 在用作用于形成沟槽的蚀刻掩模的氮化物膜被剥离之后,用于控制EFH的隔离膜的蚀刻工艺在导电层未被蚀刻的同时蚀刻隔离膜的条件下进行。 因此,可以防止对于浮动栅极的导电层的横向和上部的损坏,可以防止在周边区域发生护城河,并且可以相应地提高装置的可靠性。
    • 19. 发明申请
    • Method of manufacturing NAND flash memory device
    • 制造NAND闪存器件的方法
    • US20070117318A1
    • 2007-05-24
    • US11593914
    • 2006-11-07
    • In Lee
    • In Lee
    • H01L21/336H01L29/76
    • H01L27/115H01L27/11521
    • A method of manufacturing a NAND flash memory device, consisting of the steps of consecutively etching a polysilicon layer, a tunnel oxidization layer, and a semiconductor substrate in a polysilicon layer chamber. Accordingly, an etch step and a cleaning step can be reduced, the Turn Around Time (TAT) can be shortened, and additional equipment investment is not required. It is therefore possible to improve productivity and lower cost. Furthermore, the probability that particles may occur is reduced due to a reduction of the etch step. Accordingly, the yield can be improved in mass-production.
    • 一种制造NAND闪速存储器件的方法,包括在多晶硅层室中连续蚀刻多晶硅层,隧道氧化层和半导体衬底的步骤。 因此,可以减少蚀刻步骤和清洁步骤,可以缩短转盘时间(TAT),并且不需要额外的设备投资。 因此,可以提高生产率和降低成本。 此外,由于蚀刻步骤的减少,颗粒可能发生的可能性降低。 因此,可以在批量生产中提高收率。