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1. 发明申请

US20180059630A1 Smart Factory Platform For Processing Data Obtained In Continuous Process 审中-公开
公开(公告)号：US20180059630A1
公开(公告)日：2018-03-01
申请号：US15693158
申请日：2017-08-31
申请人： Won Mo YANG , Hyun Woo YU , Eun Kgu KIM , Man Jin PARK , Jang Soo JUNG , Tong Ki KIM , Young Lea LEE , Seong Cheol PARK , Sung Yong LEE , Kyung Ho KU , Seung Hyun SEO , Nam Geon YANG , Woo Kyum KIM , Jin Woong KANG , Seo Yeon HWANG , In LEE
发明人： Won Mo YANG , Hyun Woo YU , Eun Kgu KIM , Man Jin PARK , Jang Soo JUNG , Tong Ki KIM , Young Lea LEE , Seong Cheol PARK , Sung Yong LEE , Kyung Ho KU , Seung Hyun SEO , Nam Geon YANG , Woo Kyum KIM , Jin Woong KANG , Seo Yeon HWANG , In LEE
IPC分类号： G05B19/042 , G06F7/08 , G06F9/48
CPC分类号： G05B19/042 , G05B2219/25232 , G06F7/08 , G06F9/4887 , G06F9/5038
摘要： Disclosed is a smart factory platform for processing data obtained in a continuous process including a first process and a second process following the first process. The smart factory platform includes a distributed parallel processing system including at least one processing unit that generates mapping data by mapping a process identification (ID) to collection data collected from the continuous process and sorts the mapping data to generate sorting data, the process ID defining a process where the collection data occurs and the sorting data being generated for association processing between pieces of collection data collected from different processes; and a big data analysis system storing the sorting data with respect to the process ID.

2. 发明授权

US09902290B2 Reverse equipment for motorcycle 有权
公开(公告)号：US09902290B2
公开(公告)日：2018-02-27
申请号：US14439231
申请日：2014-09-22
申请人： Baek In Lee
发明人： Soun-Hwa Park
IPC分类号： B60L15/20 , B60K17/08 , B62M7/12 , B62M11/06 , F16H61/00 , F16H3/30
CPC分类号： B60L15/20 , B60K17/08 , B62M7/12 , B62M11/06 , F16H3/30 , F16H61/0021 , F16H61/0031 , Y02T10/7258
摘要： Disclosed is a reversing device for a motorcycle, including: a housing having first and second output holes; a first output shaft installed in the housing through the first output hole; a second output shaft installed in the housing through the second output hole; a motor supplying power to the first output shaft or the second output shaft; a first solenoid supplying operating power to the first output shaft; a second solenoid supplying operating power to the second output shaft; a decelerating part decelerating the power of the motor to transmit the decelerated power to the second output shaft; and a controller transmitting a driving signal to the motor, the first solenoid or the second solenoid.

3. 发明授权

US09832861B2 Touch panel and manufacturing method thereof 有权
公开(公告)号：US09832861B2
公开(公告)日：2017-11-28
申请号：US13501919
申请日：2010-10-15
申请人： Byung Soo Kim , Keun Sik Lee , Chung Won Seo , Ji Won Jo , Hyuk Jin Hong , Yong In Lee
发明人： Byung Soo Kim , Keun Sik Lee , Chung Won Seo , Ji Won Jo , Hyuk Jin Hong , Yong In Lee
IPC分类号： G06F3/041 , H05K1/02 , G06F3/044 , G06F3/047 , H05K1/09
CPC分类号： H05K1/0274 , G06F3/044 , G06F3/047 , G06F2203/04111 , H05K1/0296 , H05K1/09 , Y10T29/49155
摘要： A touch panel is provided. The touch panel includes a substrate, a jumper metal, a first insulation layer, first and second conductive patterns, first and second metal electrodes, and a second insulation layer. The jumper metal is formed on the substrate. The first insulation layer includes an opening and is formed on the jumper metal. The first and second conductive patterns are formed on the first insulation layer. The first and second metal electrodes are respectively connected to end portions of the first and second conductive patterns. The second insulation layer is formed on the first and second conductive patterns and the first and second metal electrodes. One of the first and second conductive patterns is connected by the jumper metal exposed through the opening of the first insulation layer.

4. 发明授权

US09666478B2 Methods of forming wiring structures and methods of manufacturing semiconductor devices 有权
公开(公告)号：US09666478B2
公开(公告)日：2017-05-30
申请号：US15048993
申请日：2016-02-19
申请人： Thomas Oszinda , Tae-Jin Yim , Sang-Hoon Ahn , Nae-In Lee
发明人： Thomas Oszinda , Tae-Jin Yim , Sang-Hoon Ahn , Nae-In Lee
IPC分类号： H01L21/76 , H01L21/768
CPC分类号： H01L21/76831 , H01L21/3105 , H01L21/76814 , H01L21/76825 , H01L21/76826 , H01L23/53238 , H01L23/5329 , H01L2221/1047
摘要： In a method of forming a wiring structure, an insulating interlayer is formed on a substrate. The insulating interlayer includes an opening and has pores distributed therein and exposed at a surface thereof. The insulating interlayer is exposed to a silane compound to form a pore sealing layer on the surface of the insulating interlayer and a sidewall of the opening. A conductive pattern filling the opening is formed on the pore sealing layer.

5. 发明授权

US09526391B2 Cleaning system and maintenance station thereof 有权
标题翻译：清洁系统及维护站
公开(公告)号：US09526391B2
公开(公告)日：2016-12-27
申请号：US13590618
申请日：2012-08-21
申请人： Byoung In Lee , Dong Won Kim , Hyun Soo Jung , Hwi Chan Jang
发明人： Byoung In Lee , Dong Won Kim , Hyun Soo Jung , Hwi Chan Jang
IPC分类号： A47L5/38 , A47L11/40 , A47L11/33
CPC分类号： A47L11/4025 , A47L11/33 , A47L2201/00 , A47L2201/024
摘要： A cleaning system includes a robot cleaner having an opening unit and a first dirt container funneled to the opening unit, and a maintenance station to which robot cleaner is docked to discharge dirt stored in the first dirt container. The maintenance station includes a first inlet hole configured to intake dirt from the first dirt container through the opening unit, a first outlet hole configured to blow air into the first dirt container, a circulating passage provided between the first inlet hole and the first outlet hole, a second dirt container disposed on the circulation passage to store dirt taken in from the robot cleaner, a draft apparatus having a draft fan and a fan motor to drive the draft fan to circulate air through the circulating passage, and a second outlet hole configured to discharge air inside the circulating passage of the maintenance station to an outside.
摘要翻译：清洁系统包括机器人清洁器，其具有开口单元和漏斗到开口单元的第一污物容器以及机器人清洁器对准的维护站，以排放存储在第一污物容器中的污物。维护站包括：第一入口孔，其构造成通过开口单元从第一污物容器吸入污物;第一出口孔，其构造成将空气吹入第一污物容器;循环通道，设置在第一入口孔和第一出口孔之间设置在所述循环通道上的第二污物容器，用于存放从机器人清洁器吸入的污物，具有通风扇的牵引装置和风扇马达，用于驱动所述通风扇使空气循环通过所述循环通道;以及第二出口孔，以将维护站的循环通道内的空气排出到外部。

6. 发明申请

US20160307842A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20160307842A1
公开(公告)日：2016-10-20
申请号：US15006265
申请日：2016-01-26
申请人： Jong-Min BAEK , Sang-Hoon AHN , Woo-Kyung YOU , Byung-Hee KIM , Young-Ju PARK , Nae-in LEE , Kyung-Min CHUNG
发明人： Jong-Min BAEK , Sang-Hoon AHN , Woo-Kyung YOU , Byung-Hee KIM , Young-Ju PARK , Nae-in LEE , Kyung-Min CHUNG
IPC分类号： H01L23/522 , H01L27/088 , H01L23/535 , H01L23/532
CPC分类号： H01L27/0886 , H01L21/823431 , H01L21/823475
摘要： A semiconductor device includes a plurality of wiring structures spaced apart from each other, and an insulating interlayer structure. Each of the wiring structures includes a metal pattern and a barrier pattern covering a sidewall, a bottom surface, and an edge portion of a top surface of the metal pattern and not covering a central portion of the top surface of the metal pattern. The insulating interlayer structure contains the wiring structures therein, and has an air gap between the wiring structures.
摘要翻译：半导体器件包括彼此间隔开的多个布线结构和绝缘夹层结构。每个布线结构包括金属图案和覆盖金属图案的顶表面的侧壁，底表面和边缘部分并且不覆盖金属图案的顶表面的中心部分的阻挡图案。绝缘层间结构包含其中的布线结构，并且在布线结构之间具有气隙。

7. 发明授权

US09400577B2 Capactive touch panel 有权
标题翻译：电容式触摸屏
公开(公告)号：US09400577B2
公开(公告)日：2016-07-26
申请号：US13501951
申请日：2010-10-15
申请人： Byung Soo Kim , Keun Sik Lee , Chung Won Seo , Ji Won Jo , Hyuk Jin Hong , Yong In Lee
发明人： Byung Soo Kim , Keun Sik Lee , Chung Won Seo , Ji Won Jo , Hyuk Jin Hong , Yong In Lee
IPC分类号： H03K17/975 , G06F3/044 , G06F3/047
CPC分类号： G06F3/044 , G06F3/047 , Y10T29/49105
摘要： A touch panel is provided. The touch panel includes a first conductive pattern, a first insulation layer, a second conductive pattern, a first metal electrode, a second metal electrode, and a second insulation layer. The first conductive pattern is formed on a transparent substrate. The first insulation layer is formed on the first conductive pattern. The second conductive pattern is formed on the first insulation layer. The first metal electrode is connected to one end of the first conductive pattern. The second metal electrode is connected to one end of the second conductive pattern. The second insulation layer is formed on the second conductive pattern, the first metal electrode or the second metal electrode.
摘要翻译：提供触摸面板。触摸面板包括第一导电图案，第一绝缘层，第二导电图案，第一金属电极，第二金属电极和第二绝缘层。第一导电图案形成在透明基板上。第一绝缘层形成在第一导电图案上。第二导电图案形成在第一绝缘层上。第一金属电极连接到第一导电图案的一端。第二金属电极连接到第二导电图案的一端。第二绝缘层形成在第二导电图案，第一金属电极或第二金属电极上。

8. 发明申请

US20160109480A1 TEST SOCKET FOR TESTING SEMICONDUCTOR CHIP PACKAGE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：用于测试半导体芯片封装的测试插座及其制造方法
公开(公告)号：US20160109480A1
公开(公告)日：2016-04-21
申请号：US14743163
申请日：2015-06-18
申请人： Jong-won Han , Jong-woo Lee , Young-gi Min , Soon-won Lee , Yong-in Lee
发明人： Jong-won Han , Jong-woo Lee , Young-gi Min , Soon-won Lee , Yong-in Lee
IPC分类号： G01R1/04 , G01R31/26 , H01B1/04 , H01R13/03 , H01R24/20 , H01B1/02
CPC分类号： G01R1/0433 , G01R31/26 , H01B1/02 , H01B1/04 , H01R13/03 , H01R13/2414 , H01R24/20 , H01R2107/00 , H01R2201/20
摘要： A test socket is provided that includes a base material including an insulating elastic material and a conductive portion extending through the base material in a thickness direction of the base material, wherein the conductive portion includes a plurality of conductive particle structures arranged in the thickness direction of the base material, and each of the plurality of conductive particle structures includes a plurality of conductive particles having at least one insulating wire and/or at least one conductive wire extending from a surface of the conductive particle, bonded with a material having a functional group.
摘要翻译：提供了一种测试插座，其包括基材，所述基材包括绝缘弹性材料和沿所述基材的厚度方向延伸穿过所述基材的导电部分，其中所述导电部分包括沿着所述基材的厚度方向布置的多个导电颗粒结构所述基材和所述多个导电粒子结构中的每一个包括多个导电颗粒，所述多个导电颗粒具有至少一个绝缘导线和/或至少一个从所述导电颗粒的表面延伸的导电丝，所述导电颗粒与具有官能团的材料。

9. 发明授权

US09214530B2 Methods of forming semiconductor devices including a stressor in a recess 有权
标题翻译：在凹部中形成包括应力源的半导体器件的方法
公开(公告)号：US09214530B2
公开(公告)日：2015-12-15
申请号：US14033639
申请日：2013-09-23
申请人： Dong-Suk Shin , Chul-Woong Lee , Hoi-Sung Chung , Young-Tak Kim , Nae-In Lee
发明人： Dong-Suk Shin , Chul-Woong Lee , Hoi-Sung Chung , Young-Tak Kim , Nae-In Lee
IPC分类号： H01L21/336 , H01L29/66 , H01L21/8234 , H01L21/8238 , H01L29/78 , H01L29/04 , H01L29/06
CPC分类号： H01L29/7848 , H01L21/02636 , H01L21/30604 , H01L21/823412 , H01L21/823425 , H01L21/823468 , H01L21/823807 , H01L21/823814 , H01L21/823864 , H01L27/088 , H01L29/045 , H01L29/0603 , H01L29/0649 , H01L29/0653 , H01L29/0847 , H01L29/165 , H01L29/167 , H01L29/66545 , H01L29/6656 , H01L29/66568 , H01L29/66575 , H01L29/66636 , H01L29/7833 , H01L29/7834
摘要： Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a fast etching region comprising phosphorous in an active region and forming a first trench in the active region by recessing the fast etching region. The methods may also include forming a second trench in the active region by enlarging the first trench using a directional etch process and forming a stressor in the second trench. The second trench may include a notched portion of the active region.
摘要翻译：提供了包括凹部中的应力器的半导体器件和形成半导体器件的方法。所述方法可以包括在有源区中形成包含磷的快速蚀刻区域，并且通过使快速蚀刻区域凹陷来在有源区中形成第一沟槽。所述方法还可以包括通过使用定向蚀刻工艺扩大第一沟槽并在第二沟槽中形成应力源来在有源区域中形成第二沟槽。第二沟槽可以包括有源区的切口部分。

10. 发明申请

US20150287682A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20150287682A1
公开(公告)日：2015-10-08
申请号：US14637640
申请日：2015-03-04
申请人： Sang Hoon AHN , Sangho RHA , Jongmin BAEK , Wookyung YOU , Nae-In LEE
发明人： Sang Hoon AHN , Sangho RHA , Jongmin BAEK , Wookyung YOU , Nae-In LEE
IPC分类号： H01L23/532 , H01L23/528 , H01L23/522
CPC分类号： H01L23/53295 , H01L21/76805 , H01L21/76807 , H01L21/7682 , H01L21/76826 , H01L21/76832 , H01L21/76835 , H01L21/76885 , H01L23/5222 , H01L23/5226 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first conductive pattern on a substrate, an insulating diffusion barrier layer conformally covering a surface of the first conductive pattern, the insulation diffusion barrier layer exposed by an air gap region adjacent to a sidewall of the first conductive pattern, and a second conductive pattern on the first conductive pattern, the second conductive pattern penetrating the insulating diffusion barrier layer so as to be in contact with the first conductive pattern.
摘要翻译：半导体器件包括：衬底上的第一导电图案，保形地覆盖第一导电图案的表面的绝缘扩散阻挡层，由邻近第一导电图案的侧壁的气隙区域暴露的绝缘扩散阻挡层，以及第二导电图案在第一导电图案上，第二导电图案穿透绝缘扩散阻挡层，以便与第一导电图案接触。

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