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11. 发明授权

US08005124B2 Optical bandwidth enhancement of light emitting and lasing transistor devices and circuits 有权
标题翻译：发光和激光晶体管器件和电路的光学带宽增强
公开(公告)号：US08005124B2
公开(公告)日：2011-08-23
申请号：US12587895
申请日：2009-10-14
申请人： Han Wui Then , Gabriel Walter , Milton Feng , Nick Holonyak, Jr.
发明人： Han Wui Then , Gabriel Walter , Milton Feng , Nick Holonyak, Jr.
IPC分类号： H01S5/00
CPC分类号： H01S5/06203 , B82Y20/00 , H01S5/0427 , H01S5/10 , H01S5/14 , H01S5/34
摘要： A method for producing wide bandwidth laser emission responsive to high frequency electrical input signals, including the following steps: providing a heterojunction bipolar transistor device having collector, base, and emitter regions; providing at least one quantum size region in the base region, and enclosing at least a portion of the base region in an optical resonant cavity; coupling electrical signals, including the high frequency electrical input signals, with respect to the collector, base and emitter region, to cause laser emission from the transistor device; and reducing the operating beta of the transistor laser device to enhance the optical bandwidth of the laser emission in response to the high frequency electrical signals.
摘要翻译：一种响应于高频电输入信号产生宽带宽激光发射的方法，包括以下步骤：提供具有集电极，基极和发射极区的异质结双极晶体管器件; 在所述基极区域中提供至少一个量子尺寸区域，并且在所述光学谐振腔中包围所述基极区域的至少一部分; 将包括高频电输入信号的电信号相对于集电极，基极和发射极区域耦合，以引起来自晶体管器件的激光发射; 并降低晶体管激光器件的运行β，以响应高频电信号增强激光发射的光学带宽。

12. 发明申请

US20100289427A1 Light emitting and lasing semiconductor methods and devices 有权
标题翻译：发光和发光半导体的方法和装置
公开(公告)号：US20100289427A1
公开(公告)日：2010-11-18
申请号：US12799080
申请日：2010-04-16
申请人： Gabriel Walter , Nick Holonyak, JR. , Milton Feng , Chao-Hsin Wu
发明人： Gabriel Walter , Nick Holonyak, JR. , Milton Feng , Chao-Hsin Wu
IPC分类号： H05B37/02 , H01L33/04 , H01S5/20
CPC分类号： H01S5/34 , B82Y20/00 , H01L33/0016 , H01L33/06 , H01L33/30 , H01S5/0425 , H01S5/06203 , H01S5/06213 , H01S5/18311 , H01S5/1835 , H01S5/34313
摘要： A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity of voltage distribution in the region therebetween.
摘要翻译：一种从提高效率的二端子半导体器件产生发光的方法，包括以下步骤：提供包括半导体漏极区域的分层半导体结构，该半导体漏极区域包括至少一个漏极层，设置在漏极区域上的半导体基极区域，至少一个基极层，以及设置在所述基极区域的一部分上并且包括发射极台面的半导体发射极区域，所述发射极台面包括至少一个发射极层; 在碱性区域中提供至少一个呈现量子效应的区域; 提供在所述基极区域的暴露表面上具有第一部分的基极/漏电极，以及与所述漏极区域耦合的另一部分，并且在所述发射极区域的表面上提供发射极; 施加相对于基极/漏极和发射极电极的信号以获得从基极区域发出的光; 以及在其间的区域中配置基极/漏极和发射极用于电压分布的实质均匀性。

13. 发明授权

US07813396B2 Transistor laser devices and methods 有权
公开(公告)号：US07813396B2
公开(公告)日：2010-10-12
申请号：US12384772
申请日：2009-04-08
申请人： Milton Feng , Nick Holonyak, Jr. , Gabriel Walter , Han Wui Then
发明人： Milton Feng , Nick Holonyak, Jr. , Gabriel Walter , Han Wui Then
IPC分类号： H01S5/34 , H01S5/062
CPC分类号： H01S5/06203 , H01S5/3095
摘要： A method for producing light emission from a semiconductor device includes the following steps: providing a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region that forms a tunnel junction adjacent the base region; providing, in the base region, a region exhibiting quantum size effects; providing an emitter terminal, a base terminal, and a collector terminal respectively coupled with the emitter region, the base region, and the collector region; and applying electrical signals with respect to the emitter terminal, the base terminal and the collector terminal to produce light emission from the base region.

14. 发明授权

US07696536B1 Semiconductor method and device 有权
标题翻译：半导体方法和器件
公开(公告)号：US07696536B1
公开(公告)日：2010-04-13
申请号：US11496161
申请日：2006-07-31
申请人： Milton Feng , Nick Holonyak, Jr.
发明人： Milton Feng , Nick Holonyak, Jr.
IPC分类号： H01L29/74
CPC分类号： H01L33/0016 , H01L33/08
摘要： A method for enhancing operation of a bipolar light-emitting transistor includes the following steps: providing a bipolar light-emitting transistor having emitter, base, and collector regions; providing electrodes for coupling electrical signals with the emitter, base, and collector regions; and adapting the base region to promote carrier transport from the emitter region toward the collector region by providing, in the base region, several spaced apart quantum size regions of different thicknesses, with the thicknesses of the quantum size regions being graded from thickest near the collector to thinnest near the emitter.
摘要翻译：一种用于增强双极发光晶体管的操作的方法包括以下步骤：提供具有发射极，基极和集电极区域的双极发光晶体管; 提供用于将电信号与发射极，基极和集电极区域耦合的电极; 并且通过在基极区域中提供不同厚度的几个间隔开的量子尺寸区域，使得基极区域能够促进从发射极区域向集电极区域的载流子传输，其中量子尺寸区域的厚度从收集器附近的厚度分级在发射器附近最薄。

15. 发明申请

US20100078623A1 SEMICONDUCTOR METHOD AND DEVICE 有权
标题翻译：半导体方法和器件
公开(公告)号：US20100078623A1
公开(公告)日：2010-04-01
申请号：US11496161
申请日：2006-07-31
申请人： Milton Feng , Nick Holonyak, JR.
发明人： Milton Feng , Nick Holonyak, JR.
IPC分类号： H01L33/04 , H01L29/15 , H01L29/737
CPC分类号： H01L33/0016 , H01L33/08
摘要： A method for enhancing operation of a bipolar light-emitting transistor includes the following steps: providing a bipolar light-emitting transistor having emitter, base, and collector regions; providing electrodes for coupling electrical signals with the emitter, base, and collector regions; and adapting the base region to promote carrier transport from the emitter region toward the collector region by providing, in the base region, several spaced apart quantum size regions of different thicknesses, with the thicknesses of the quantum size regions being graded from thickest near the collector to thinnest near the emitter.
摘要翻译：一种用于增强双极发光晶体管的操作的方法包括以下步骤：提供具有发射极，基极和集电极区域的双极发光晶体管; 提供用于将电信号与发射极，基极和集电极区域耦合的电极; 并且通过在基极区域中提供不同厚度的几个间隔开的量子尺寸区域，使得基极区域能够促进从发射极区域向集电极区域的载流子传输，其中量子尺寸区域的厚度从收集器附近的厚度分级在发射器附近最薄。

16. 发明申请

US20100073086A1 Method and apparatus for producing linearized optical signals 有权
标题翻译：用于产生线性化光信号的方法和装置
公开(公告)号：US20100073086A1
公开(公告)日：2010-03-25
申请号：US12284895
申请日：2008-09-25
申请人： Nick Holonyak, JR. , Milton Feng , Han Wui Then
发明人： Nick Holonyak, JR. , Milton Feng , Han Wui Then
IPC分类号： H03F3/08
CPC分类号： H03F3/08
摘要： A method for producing an optical output in substantially linear relationship with an electrical AC signal, includes the following steps: providing a light-emitting transistor having emitter, base, and collector regions, and associated respective emitter, base, and collector terminals, the transistor having a light-emitting output port; applying the AC signal to a first input port defined across a given one of the terminals and a common one of the terminals; applying an amplified version of the AC signal to a second input port defined across a further one of the terminals and the common one of the input terminals; and selecting an amplification of the amplified version of the AC signal to substantially cancel a nonlinearity characteristic of the light emitting transistor.
摘要翻译：一种用于产生与电AC信号基本上线性关系的光输出的方法包括以下步骤：提供具有发射极，基极和集电极区以及相关的各个发射极，基极和集电极端子的发光晶体管，晶体管具有发光输出端口; 将AC信号施加到限定在给定的一个端子和所述端子中的公共端子之间的第一输入端口; 将AC信号的放大版本应用于跨越另一个终端和所述公共输入终端中的另一个定义的第二输入端口; 以及选择所述AC信号的放大版本的放大，以基本上消除所述发光晶体管的非线性特性。

17. 发明申请

US20080089368A1 Semiconductor laser devices and methods 审中-公开
标题翻译：半导体激光器件及方法
公开(公告)号：US20080089368A1
公开(公告)日：2008-04-17
申请号：US11974323
申请日：2007-10-12
申请人： Milton Feng , Nick Holonyak , Richard Chan , Gabriel Walter
发明人： Milton Feng , Nick Holonyak , Richard Chan , Gabriel Walter
IPC分类号： H01S3/10
CPC分类号： H01L33/0016 , B82Y20/00 , H01L33/08 , H01S5/0422 , H01S5/0618 , H01S5/06203 , H01S5/06226 , H01S5/06812 , H01S5/305 , H01S5/3054 , H01S5/3211 , H01S5/34313
摘要： A method for producing controllable light pulses includes the following steps: providing a heterojunction bipolar transistor structure including collector, base, and emitter regions of semiconductor materials; providing an optical resonant cavity enclosing at least a portion of the transistor structure; and coupling electrical signals with respect to the collector, base, and emitter regions, to switch back and forth between a stimulated emission mode that produces output laser pulses and a spontaneous emission mode. In a form of the method, the electrical signals include an AC excitation signal, and part of each excitation signal cycle is operative to produce stimulated emission, and another part of each excitation signal cycle is operative to produce spontaneous emission.
摘要翻译：一种制造可控光脉冲的方法包括以下步骤：提供包括半导体材料的集电极，基极和发射极区域的异质结双极晶体管结构; 提供封闭所述晶体管结构的至少一部分的光学谐振腔; 并且相对于集电极，基极和发射极区域耦合电信号，以在产生输出激光脉冲的受激发射模式和自发发射模式之间来回切换。以该方法的形式，电信号包括AC激励信号，并且每个激励信号周期的一部分可操作以产生受激发射，并且每个激励信号周期的另一部分可操作以产生自发发射。

18. 发明申请

US20050173730A1 Collector layer structure for a double hetero-junction bipolar transistor for power amplification applications 失效
标题翻译：用于功率放大应用的双异质结双极晶体管的集电极层结构
公开(公告)号：US20050173730A1
公开(公告)日：2005-08-11
申请号：US10777911
申请日：2004-02-11
申请人： Shyh-Chiang Shen , David Caruth , Milton Feng
发明人： Shyh-Chiang Shen , David Caruth , Milton Feng
IPC分类号： H01L29/08 , H01L29/737 , H01L29/739
CPC分类号： H01L29/0821 , H01L29/7371
摘要： An indium phosphide based double hetero-junction bipolar transistor with an increased collector-base breakdown voltage and a reduced operational knee voltage is provided by manipulating the conductivity in the collector region. The collector is formed using layers of different conductivities, with a region of the collector relatively close to the base being unintentionally or low doped. A voltage drop across the unintentionally doped region reduces the maximum value of the electric field and the velocity of carriers injected into the collector region at the base-collector junction. The conductivity throughout the collector region may be graded such that the highest conductivity occurs near the sub-collector and lowest conductivity occurs near the base region.
摘要翻译：通过操纵集电极区域的导电性，提供了具有增加的集电极 - 基极击穿电压和降低的操作拐点电压的基于磷化铟的双异质结双极晶体管。集电极使用不同电导率的层形成，集电极的区域相对靠近基极是无意的或低掺杂的。跨越无意掺杂区域的电压降降低了电场的最大值和在基极 - 集电极结处注入到集电极区域中的载流子的速度。整个集电极区域的电导率可以被分级，使得在亚极集电极附近发生最高的导电率，并且在基极区域附近出现最低的电导率。

19. 发明申请

US20050054172A1 Semiconductor device and mehtod 有权
标题翻译：半导体器件和mehtod
公开(公告)号：US20050054172A1
公开(公告)日：2005-03-10
申请号：US10861320
申请日：2004-06-04
申请人： Milton Feng , Nick Holonyak
发明人： Milton Feng , Nick Holonyak
IPC分类号： H01L21/00 , H01L29/739 , H01L31/0328 , H01L31/109 , H01L33/00 , H01L33/08
CPC分类号： H01L33/0016 , H01L29/0821 , H01L29/1004 , H01L29/155 , H01L29/205 , H01L29/66242 , H01L29/7371 , H01L33/08
摘要： A method for increasing the speed of a bipolar transistor, includes the following steps: providing a bipolar transistor having emitter, base, and collector regions; providing electrodes for coupling electrical signals with the emitter, base, and collector regions; and adapting the base region to enhance stimulated emission to the detriment of spontaneous emission, so as to reduce carrier recombination lifetime in the base region.
摘要翻译：一种提高双极晶体管速度的方法包括以下步骤：提供具有发射极，基极和集电极区域的双极晶体管; 提供用于将电信号与发射极，基极和集电极区域耦合的电极; 并且使基极区域适应于增强受激发射而不利于自发发射，从而降低基区的载流子复合寿命。

20. 发明授权

US06727530B1 Integrated photodetector and heterojunction bipolar transistors 失效
标题翻译：集成光电探测器和异质结双极晶体管
公开(公告)号：US06727530B1
公开(公告)日：2004-04-27
申请号：US10379862
申请日：2003-03-04
申请人： Milton Feng , Shyh-Chiang Shen
发明人： Milton Feng , Shyh-Chiang Shen
IPC分类号： H01L2972
CPC分类号： H01L29/7371 , H01L21/8252 , H01L27/0605 , H01L29/0821 , H01L31/02327
摘要： The speed at which optical networking devices operate is increased with the present invention with integrated circuits that provide both optical and electronic functions. The present invention provides highly integrated p-i-n or p-i-n-i-p photodetectors and heterojunction bipolar transistors for amplifying photodetector signals formed from a single semiconductor layer stack. The techniques are applicable for the integration of all InP-based and GaAs-based single-heterojunction bipolar transistors and double-heterojunction bipolar transistors. The photodetectors and transistors are formed from common layers, allowing them to be manufactured simultaneously during a processing of the stack. Integrating these components on a single circuit has the potential to greatly increase the speed (in excess of 40 Gb/s) and to decrease the cost of high-speed networking components through the development of compact optical circuits for optical networking. The present invention also includes the inclusion of a reflecting stack of semiconductor layers below the photodetector to increase the responsivity of the detector.
摘要翻译：本发明利用提供光学和电子功能的集成电路来提高光网络设备的工作速度。本发明提供高度集成的p-i-n或p-i-n-i-p光电探测器和用于放大由单个半导体层堆叠形成的光电检测器信号的异质结双极晶体管。该技术适用于所有基于InP和GaAs的单异质结双极晶体管和双异质结双极晶体管的集成。光电检测器和晶体管由公共层形成，允许它们在堆叠的处理期间同时制造。将这些组件集成在单个电路上有可能大大提高速度（超过40 Gb / s），并通过开发用于光网络的紧凑型光电路来降低高速网络组件的成本。本发明还包括在光电检测器下方包括半导体层的反射堆叠以增加检测器的响应度。

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