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11. 发明授权

US08372719B2 Hard mask removal for semiconductor devices 有权
标题翻译：半导体器件的硬掩模去除
公开(公告)号：US08372719B2
公开(公告)日：2013-02-12
申请号：US12724157
申请日：2010-03-15
申请人： Sheng-Hsiung Wang , Fu-Kai Yang , Yuan-Ching Peng , Chi-Cheng Hung
发明人： Sheng-Hsiung Wang , Fu-Kai Yang , Yuan-Ching Peng , Chi-Cheng Hung
IPC分类号： H01L21/461 , H01L21/027
CPC分类号： H01L21/31144 , H01L21/28017 , H01L21/31116 , H01L29/66795
摘要： A method of removing a hard mask during fabrication of semiconductor devices is provided. A protective layer, such as a bottom anti-reflective coating (BARC) layer or other dielectric layer, is formed over structures formed on a substrate, wherein spacers are formed alongside the structures. In an embodiment, the structures are gate electrodes having a hard mask formed thereon and the spacers are spacers formed alongside the gate electrodes. A photoresist layer is formed over the protective layer, and the photoresist layer may be patterned to remove a portion of the photoresist layer over portions of the protective layer. Thereafter, an etch-back process is performed, such that the protective layer adjacent to the spacers remains to substantially protect the spacers. The hard mask is then removed while the protective layer protects the spacers.
摘要翻译：提供了在制造半导体器件期间去除硬掩模的方法。在衬底上形成的结构上形成诸如底部抗反射涂层（BARC）层或其它电介质层的保护层，其中间隔物沿着结构形成。在一个实施例中，结构是具有形成在其上的硬掩模的栅电极，并且间隔物是与栅电极一起形成的间隔物。在保护层上形成光致抗蚀剂层，并且可以对光致抗蚀剂层进行图案化以在保护层的部分上去除光致抗蚀剂层的一部分。此后，执行回蚀处理，使得与间隔物相邻的保护层保持基本上保护间隔物。然后去除硬掩模，同时保护层保护间隔物。

12. 发明申请

US20110252387A1 METHOD AND APPARATUS FOR REDUCING IMPLANT TOPOGRAPHY REFLECTION EFFECT 有权
标题翻译：用于减少植入地形反射效应的方法和装置
公开(公告)号：US20110252387A1
公开(公告)日：2011-10-13
申请号：US12758147
申请日：2010-04-12
申请人： Wen Hao Liu , Hsien-Huang Liao , Chi-Cheng Hung , Wen-Chun Huang , Ru-Gun Liu
发明人： Wen Hao Liu , Hsien-Huang Liao , Chi-Cheng Hung , Wen-Chun Huang , Ru-Gun Liu
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F1/70
摘要： Embodiments of the present disclosure provide methods and apparatuses for integrated circuits. An exemplary integrated circuit (IC) method includes providing an IC design layout that includes a design feature; determining a dimensional difference between the design feature and a corresponding developed photoresist feature of a photoresist layer; modifying the CD of the design feature to compensate for the difference, thereby generating a modified IC design layout; and making a mask using the modified IC design layout.
摘要翻译：本公开的实施例提供用于集成电路的方法和装置。一种示例性的集成电路（IC）方法包括提供包括设计特征的IC设计布局; 确定所述设计特征和光致抗蚀剂层的相应展开的光致抗蚀剂特征之间的尺寸差; 修改设计特征的CD以补偿差异，从而生成修改的IC设计布局; 并使用修改的IC设计布局制作面具。

13. 发明授权

US07120772B2 Micro-system for burn-in system program from a plug-able subsystem into main memory and method thereof 失效
标题翻译：用于从可插入子系统到主存储器的用于老化系统程序的微系统及其方法
公开(公告)号：US07120772B2
公开(公告)日：2006-10-10
申请号：US10693926
申请日：2003-10-28
申请人： Chi-Cheng Hung
发明人： Chi-Cheng Hung
IPC分类号： G06F12/00
CPC分类号： G01R31/287 , G01R31/2868 , G06F11/1433
摘要： This invention relates to a micro-system for burn-in system program from a backup memory of plug-able subsystem into main memory and method thereof, wherein data codes via the data bus accessed by processor from the backup memory or the main memory are determined by two devices for adjusting level.
摘要翻译：本发明涉及一种用于从可插拔子系统的备用存储器到主存储器的老化系统程序的微系统及其方法，其中确定由处理器从备用存储器或主存储器访问的数据总线的数据代码通过两个设备调整水平。

14. 发明授权

US08173548B2 Reverse planarization method 有权
标题翻译：反向平面化方法
公开(公告)号：US08173548B2
公开(公告)日：2012-05-08
申请号：US12789709
申请日：2010-05-28
申请人： Chi-Cheng Hung , Yung-Sung Yen , Chun-Kuang Chen
发明人： Chi-Cheng Hung , Yung-Sung Yen , Chun-Kuang Chen
IPC分类号： H01L21/311
CPC分类号： H01L21/0273 , G03F7/0035 , G03F7/40 , H01L21/31058 , H01L21/823456
摘要： A method for fabricating an integrated circuit device is disclosed. The method includes providing a substrate; forming a semiconductor feature over the substrate; forming a first photoresist layer over the substrate; performing a lithography process on the first photoresist layer, such the first photoresist layer includes an opening therein that exposes the semiconductor feature; performing a stabilization process on the first photoresist layer; forming a second photoresist layer over the first photoresist layer, wherein the second photoresist layer fills the opening; and etching back the first and second photoresist layers until the semiconductor feature is exposed.
摘要翻译：公开了一种用于制造集成电路器件的方法。该方法包括提供基板; 在衬底上形成半导体特征; 在所述衬底上形成第一光致抗蚀剂层; 在所述第一光致抗蚀剂层上执行光刻工艺，所述第一光致抗蚀剂层包括其中露出所述半导体特征的开口; 对所述第一光致抗蚀剂层进行稳定化处理; 在所述第一光致抗蚀剂层上形成第二光致抗蚀剂层，其中所述第二光致抗蚀剂层填充所述开口; 并且蚀刻回第一和第二光致抗蚀剂层，直到暴露半导体特征。

15. 发明申请

US20110294286A1 REVERSE PLANARIZATION METHOD 有权
标题翻译：反向平面化方法
公开(公告)号：US20110294286A1
公开(公告)日：2011-12-01
申请号：US12789709
申请日：2010-05-28
申请人： Chi-Cheng Hung , Yung-Sung Yen , Chun-Kuang Chen
发明人： Chi-Cheng Hung , Yung-Sung Yen , Chun-Kuang Chen
IPC分类号： H01L21/28 , H01L21/3105 , H01L21/31
CPC分类号： H01L21/0273 , G03F7/0035 , G03F7/40 , H01L21/31058 , H01L21/823456
摘要： A method for fabricating an integrated circuit device is disclosed. The method includes providing a substrate; forming a semiconductor feature over the substrate; forming a first photoresist layer over the substrate; performing a lithography process on the first photoresist layer, such the first photoresist layer includes an opening therein that exposes the semiconductor feature; performing a stabilization process on the first photoresist layer; forming a second photoresist layer over the first photoresist layer, wherein the second photoresist layer fills the opening; and etching back the first and second photoresist layers until the semiconductor feature is exposed.
摘要翻译：公开了一种用于制造集成电路器件的方法。该方法包括提供基板; 在衬底上形成半导体特征; 在所述衬底上形成第一光致抗蚀剂层; 在所述第一光致抗蚀剂层上执行光刻工艺，所述第一光致抗蚀剂层包括其中露出所述半导体特征的开口; 对所述第一光致抗蚀剂层进行稳定化处理; 在所述第一光致抗蚀剂层上形成第二光致抗蚀剂层，其中所述第二光致抗蚀剂层填充所述开口; 并且蚀刻回第一和第二光致抗蚀剂层，直到暴露半导体特征。

16. 发明授权

US06430630B1 Direct data access between input and output ports 有权
标题翻译：输入和输出端口之间的直接数据访问
公开(公告)号：US06430630B1
公开(公告)日：2002-08-06
申请号：US09280747
申请日：1999-03-29
申请人： Chi-Cheng Hung
发明人： Chi-Cheng Hung
IPC分类号： G06F1314
CPC分类号： G06F13/32 , G06F13/4004
摘要： A direct input/output port access device according to the invention which can control data accesses directly between an input port and an output port. The direct input/output port access device includes a local data bus which electrically connects the input port and the output port, an input/output port read/write controller and a data bus transceiver. In a direct input/output port access operating mode, the data bus transceiver is controlled by the input/output port read/write controller to electrically separate the local data bus from a system data bus. Simultaneously, the input/output port read/write controller generates can control data accesses directly between the input port and the output port according to read/write request status signals of the output port and the input port. At this time, a microprocessor can process other operations using the system data bus.
摘要翻译：根据本发明的直接输入/输出端口访问装置，其可以直接在输入端口和输出端口之间控制数据访问。直接输入/输出端口访问设备包括电连接输入端口和输出端口的本地数据总线，输入/输出端口读/写控制器和数据总线收发器。在直接输入/输出端口访问操作模式下，数据总线收发器由输入/输出端口读/写控制器控制，以将本地数据总线与系统数据总线电隔离。同时，输入/输出端口读/写控制器生成可以根据输出端口和输入端口的读/写请求状态信号直接控制输入端口和输出端口之间的数据访问。此时，微处理器可以使用系统数据总线处理其他操作。

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