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    • 11. 发明授权
    • Power measurement circuit including harmonic filter
    • 功率测量电路包括谐波滤波器
    • US06657425B2
    • 2003-12-02
    • US09891668
    • 2001-06-26
    • Tirdad SowlatiSifen Luo
    • Tirdad SowlatiSifen Luo
    • G01R2502
    • G01R21/12G01R21/10
    • A shorting element, preferably a resonant inductor-capacitor circuit, is inserted in parallel with a sense transistor, which itself is in parallel with a power transistor. The use of the shorting element in combination with the sense transistor, provides a technique to have a monotonic power detection. The shorting element eliminates extraneous currents caused by inherent collector-base and collector-substrate diodes of sense transistor, and also eliminates the extraneous collector voltage swing of the sense transistor caused by mutual coupling between inductors connected to the power and sense transistors.
    • 短路元件,优选谐振电感器 - 电容器电路与感测晶体管并联插入,读出晶体管本身与功率晶体管并联。 使用短路元件与感测晶体管组合提供了一种具有单调功率检测的技术。 短路元件消除了由感测晶体管的固有集电极 - 基极和集电极 - 基极二极管引起的外部电流,并且还消除了由连接到功率和感测晶体管的电感器之间的相互耦合引起的感测晶体管的外部集电极电压摆幅。
    • 12. 发明授权
    • Cascode bootstrapped analog power amplifier circuit
    • Cascode自举模拟功率放大器电路
    • US06496074B1
    • 2002-12-17
    • US09671890
    • 2000-09-28
    • Tirdad Sowlati
    • Tirdad Sowlati
    • H03F122
    • H03F1/523H03F1/223
    • A cascode bootstrapped analog power amplifier circuit includes a first MOSFET and a second MOSFET connected in series and coupled between a dc voltage source terminal and a common terminal. An rf input signal terminal is coupled to a gate electrode of the first MOSFET and a dc control voltage terminal is coupled to a gate electrode of the second MOSFET, with a unidirectionally-conducting element such as a diode-connected MOSFET being coupled between a drain electrode and the gate electrode of the second MOSFET. The output of the amplifier circuit is taken from the drain electrode of the second MOSFET. This circuit configuration, permits he first and second MOSFETs to withstand a larger output voltage swing, thus permitting the use of a higher supply voltage and resulting in a substantially increased maximum output power capability for a given load value.
    • 级联自举模拟功率放大器电路包括串联连接并耦合在直流电压源端子和公共端子之间的第一MOSFET和第二MOSFET。 RF输入信号端子耦合到第一MOSFET的栅电极,并且直流控制电压端子耦合到第二MOSFET的栅电极,其中单向导电元件例如二极管连接的MOSFET耦合在漏极 电极和第二MOSFET的栅电极。 放大器电路的输出取自第二MOSFET的漏电极。 该电路配置允许他的第一和第二MOSFET承受更大的输出电压摆幅,从而允许使用更高的电源电压,并且对于给定的负载值而导致基本上增加的最大输出功率能力。
    • 13. 发明授权
    • High-frequency amplifier circuit having a directly-connected bias circuit
    • 高频放大器电路具有直接连接的偏置电路
    • US06456163B1
    • 2002-09-24
    • US09801623
    • 2001-03-08
    • Sifen LuoTirdad Sowlati
    • Sifen LuoTirdad Sowlati
    • H03F304
    • H03F1/302
    • A high-frequency amplifier circuit includes an amplifying transistor and a bias circuit directly connected to said amplifying transistor. The bias circuit includes a bias transistor having a control terminal and an inductor coupled to the control terminal, and the bias transistor also has an output terminal directly connected to the amplifying transistor. A resistor is connected in series with the inductor, and the series-connected components are connected in the circuit between the control terminal and a power supply terminal. By providing an inductor in the amplifier in this manner, loading effects on the amplifying transistor at high frequencies is substantially reduced.
    • 高频放大器电路包括放大晶体管和与所述放大晶体管直接连接的偏置电路。 偏置电路包括具有控制端子和耦合到控制端子的电感器的偏置晶体管,偏置晶体管还具有直接连接到放大晶体管的输出端子。 电感器与电感器串联连接,串联连接的元件连接在控制端子和电源端子之间的电路中。 通过以这种方式在放大器中提供电感器,大幅减少了在高频下对放大晶体管的负载效应。
    • 14. 发明授权
    • High-frequency amplifier circuit with negative impedance cancellation
    • 具有负阻抗消除功能的高频放大电路
    • US06417734B1
    • 2002-07-09
    • US09603875
    • 2000-06-26
    • Sifen LuoTirdad Sowlati
    • Sifen LuoTirdad Sowlati
    • H03F304
    • H03F3/19H03F1/301H03F3/193H03F3/3432H03F3/345
    • A high-frequency amplifier circuit includes an amplifying transistor and a driver transistor, with the amplifying transistor being connected in either a common emitter or a common source configuration and the driver transistor being connected in a corresponding common collector or a common drain configuration, depending upon whether bipolar or field effect transistors are used. A current-mirror bias circuit is coupled between an input terminal and an output terminal of the driver transistor, with a resistor being provided for coupling the current mirror to the input terminal of the driver transistor. The resistor, which typically has a value of between about 20 and 100 ohms, provides a negative impedance cancellation effect while minimizing power consumption at low bias levels.
    • 高频放大器电路包括放大晶体管和驱动晶体管,放大晶体管以公共发射极或公共源配置连接,驱动晶体管连接在相应的公共集电极或公共漏极配置中,具体取决于 是否使用双极或场效晶体管。 电流镜偏置电路耦合在驱动晶体管的输入端和输出端之间,提供电阻用于将电流镜耦合到驱动晶体管的输入端。 通常具有约20和100欧姆之间的值的电阻器提供负阻抗消除效应,同时使低偏置电平下的功率消耗最小化。
    • 19. 发明授权
    • Low noise mixer
    • 低噪音混音器
    • US07398073B2
    • 2008-07-08
    • US11220030
    • 2005-09-06
    • Rajasekhar PullelaTirdad SowlatiDmitriy Rozenblit
    • Rajasekhar PullelaTirdad SowlatiDmitriy Rozenblit
    • H04B1/26
    • H04B1/28H03D7/1433H03D7/1441H03D7/1458H03D7/1466H03D7/165H03D2200/0019H03D2200/0084
    • A low noise mixer comprises a first mixer core configured to receive a radio frequency (RF) input signal having an RF frequency, and a first local oscillator signal, wherein the first local oscillator signal is at a frequency that is nominally twice the frequency of the RF frequency, the first mixer core configured to switch the RF input signal to at least one secondary mixer core at a frequency that coincides with the frequency of the first local oscillator signal, the at least one secondary mixer core configured to receive the switched RF input signal and a second local oscillator signal, where the second local oscillator signal is at the same nominal frequency as the RF input signal, and wherein switching the RF input signal at the frequency of the first local oscillator signal substantially eliminates flicker noise associated with the down-conversion process.
    • 低噪声混频器包括被配置为接收具有RF频率的射频(RF)输入信号和第一本地振荡器信号的第一混频器核心,其中第一本地振荡器信号的频率是标称频率为 RF频率,所述第一混频器核心被配置为以与所述第一本机振荡器信号的频率一致的频率将所述RF输入信号切换到至少一个辅助混频器内核,所述至少一个辅助混频器核心被配置为接收所述切换的RF输入 信号和第二本地振荡器信号,其中第二本机振荡器信号处于与RF输入信号相同的标称频率,并且其中以第一本地振荡器信号的频率切换RF输入信号基本上消除与下降相关联的闪烁噪声 转换过程。