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11. 发明授权

US09205532B2 Pressure-adjusting apparatus for vise 有权
标题翻译：虎钳调压装置
公开(公告)号：US09205532B2
公开(公告)日：2015-12-08
申请号：US14229952
申请日：2014-03-30
申请人： Tseh-Pei Lin , Chang-Chih Lin
发明人： Tseh-Pei Lin , Chang-Chih Lin
IPC分类号： B25B1/02 , B25B1/24 , B25B1/10 , B25B5/10
CPC分类号： B25B1/24 , B25B1/103 , B25B5/107
摘要： A pressure-adjusting apparatus for vise including a bolt and a pressure-adjusting element is provided. The bolt having a plurality of positioning holes is adapted for connecting to a vise. The pressure-adjusting element is sleeved onto the bolt movably. The distance between the pressure-adjusting element and the vise can be changed by moving the pressure-adjusting element so as to adjust the clamping force of the vise. A positioning member of the pressure-adjusting element is stocked in one of the positioning holes when the pressure-adjusting element is moving so that the pressure-adjusting element can be fixed at a preset location. Thus, the pressure-adjusting apparatus for vise of the present invention is more convenient for pressure adjustment.
摘要翻译：提供一种用于虎钳的压力调节装置，其包括螺栓和压力调节元件。具有多个定位孔的螺栓适于连接到虎钳。压力调节元件可移动地套在螺栓上。可以通过移动压力调节元件来调节压力调节元件与台钳之间的距离，以调节台钳的夹紧力。当压力调节元件移动时，压力调节元件的定位构件被放置在一个定位孔中，使得压力调节元件可以固定在预设位置。因此，本发明的台钳式调压装置对于压力调节更为方便。

12. 发明申请

US20140103593A1 MULTI-FUNCTIONAL VICE BASE 审中-公开
标题翻译：多功能基座
公开(公告)号：US20140103593A1
公开(公告)日：2014-04-17
申请号：US13651348
申请日：2012-10-12
申请人： CHANG YI LIN , Chang-Chih Lin
发明人： CHANG YI LIN , Chang-Chih Lin
IPC分类号： B23Q3/02
CPC分类号： B23Q3/061 , B23K37/0408 , B23Q3/066 , B25B1/06 , B25B1/103 , B25B1/22 , B25B1/2484
摘要： A multi-functional vice base including a main body and a plate is provided. The main body includes a bottom surface, side surfaces and fixing portions. At least two side surfaces form a groove therebetween. Each fixing portion is disposed between the groove and the bottom surface. A first fixing member goes through a through hole of one of the fixing portions and is fixed on a working machine bench. The plate is detachably disposed at one of the side surfaces. Whereby the vice base can be mounted on various sized horizontal machining centers. Besides, plates with different size are allowed to be mounted on the main body for clamping work pieces whose sizes are different.
摘要翻译：提供了包括主体和板的多功能底座。主体包括底面，侧面和固定部。至少两个侧表面之间形成凹槽。每个固定部分设置在凹槽和底表面之间。第一固定部件穿过一个固定部分的通孔并固定在工作台上。板可拆卸地设置在一个侧表面上。由此可以将副底座安装在各种尺寸的卧式加工中心上。此外，允许不同尺寸的板安装在主体上用于夹紧尺寸不同的工件。

13. 外观设计

USD647381S1 Clamp 有权
公开(公告)号：USD647381S1
公开(公告)日：2011-10-25
申请号：US29376985
申请日：2010-10-15
申请人： Chang-Yi Lin , Chang-Chih Lin
设计人： Chang-Yi Lin , Chang-Chih Lin

14. 发明授权

US07825274B2 Bisbiphenylacylphosphine oxide and preparation method therefore 有权
公开(公告)号：US07825274B2
公开(公告)日：2010-11-02
申请号：US12141380
申请日：2008-06-18
申请人： Wen-Chiung Su , Chang-Chih Lin , Ching-Shang Sheng
发明人： Wen-Chiung Su , Chang-Chih Lin , Ching-Shang Sheng
IPC分类号： C07F9/02
CPC分类号： C07F9/657172
摘要： A bisbiphenylacylphosphine oxide of formula (I) and its preparation method are provided. The formula of —Ar— is First, 10-chloro-9,10-dihydro-9-oxa-10-phosphaphenanthrene (CDOP) is prepared by using 2-phenylphenol, and then is esterified to synthesize 6-methoxy-(6H)-dibenz[c,e][1,2]oxa-phosphorin (MDOP). Next, acid chloride compounds are added for performing the Arbuzov reaction to synthesize bisbiphenylacylphosphine oxide. CDOP is hydrolyzed to be derived into 9,10-dihydro-9-oxa-10-phosphaphen-anthrene-10-oxide (DOPO), and then DOPO reacts with arylaldehyde to form secondary alcohol. Therefore, bisbiphenylacylphosphine oxide is prepared by using secondary alcohol under oxidation. Also, under a coupling reaction, DOPO reacts with the acid chloride compounds by using a Lewis acid as a catalyst to prepare bisbiphenylacylphosphine oxide.

15. 发明申请

US20080255381A1 BISBIPHENYLACYLPHOSPHINE OXIDE AND PREPARATION METHOD THEREFORE 有权
公开(公告)号：US20080255381A1
公开(公告)日：2008-10-16
申请号：US12141354
申请日：2008-06-18
申请人： Wen-Chiung Su , Chang-Chih Lin , Ching-Shang Sheng
发明人： Wen-Chiung Su , Chang-Chih Lin , Ching-Shang Sheng
IPC分类号： C07F9/40
CPC分类号： C07F9/657172
摘要： A bisbiphenylacylphosphine oxide of formula (I) and its preparation method are provided. The formula of —Ar— is First, 10-chloro-9,10-dihydro-9-oxa-10-phosphaphenanthrene (CDOP) is prepared by using 2-phenylphenol, and then is esterified to synthesize 6-methoxy-(6H)-dibenz[c,e][1,2]oxa-phosphorin (MDOP). Next, acid chloride compounds are added for performing the Arbuzov reaction to synthesize bisbiphenylacylphosphine oxide. CDOP is hydrolyzed to be derived into 9,10-dihydro-9-oxa-10-phosphaphen-anthrene-10-oxide (DOPO), and then DOPO reacts with arylaldehyde to form secondary alcohol. Therefore, bisbiphenylacylphosphine oxide is prepared by using secondary alcohol under oxidation. Also, under a coupling reaction, DOPO reacts with the acid chloride compounds by using a Lewis acid as a catalyst to prepare bisbiphenylacylphosphine oxide.

16. 发明申请

US20070173659A1 Bisbiphenylacylphosphine oxide and preparation method therefore 有权
标题翻译：二苯基酰基氧化膦及其制备方法
公开(公告)号：US20070173659A1
公开(公告)日：2007-07-26
申请号：US11337441
申请日：2006-01-24
申请人： Wen-Chiung Su , Chang-Chih Lin , Ching-Shang Sheng
发明人： Wen-Chiung Su , Chang-Chih Lin , Ching-Shang Sheng
IPC分类号： C07F9/02
CPC分类号： C07F9/657172
摘要： A bisbiphenylacylphosphine oxide of formula (I) and its preparation method are provided. The formula of —Ar— is First, 10-chloro-9,10-dihydro-9-oxa-10-phosphaphenanthrene (CDOP) is prepared by using 2-phenylphenol, and then is esterified to synthesize 6-methoxy-(6H)-dibenz[c,e][1,2]oxa-phosphorin (MDOP). Next, acid chloride compounds are added for performing the Arbuzov reaction to synthesize bisbiphenylacylphosphine oxide. CDOP is hydrolyzed to be derived into 9,10-dihydro-9-oxa-10-phosphaphen-anthrene-10-oxide (DOPO), and then DOPO reacts with arylaldehyde to form secondary alcohol. Therefore, bisbiphenylacylphosphine oxide is prepared by using secondary alcohol under oxidation. Also, under a coupling reaction, DOPO reacts with the acid chloride compounds by using a Lewis acid as a catalyst to prepare bisbiphenylacylphosphine oxide.
摘要翻译：提供式（I）的双联苯酰基氧化膦及其制备方法。 -Ar-的配方是通过使用2-苯基苯酚制备10-氯-9,10-二氢-9-氧杂-10-磷杂菲（CDOP），然后酯化合成6-甲氧基 - （6H） - 二苯并[c，e] [1,2]氧杂 - 磷杂（MDOP）。接下来，加入酰氯化合物进行Arbuzov反应以合成双联苯基酰基氧化膦。将CDOP水解成9,10-二氢-9-氧杂-10-磷杂蒽-10-氧化物（DOPO），然后DOPO与芳基醛反应形成仲醇。因此，通过使用仲醇在氧化下制备双联苯基酰基氧化膦。此外，在偶联反应中，DOPO通过使用路易斯酸作为催化剂与酰基氯化合物反应以制备双联苯基酰基氧化膦。

17. 外观设计

USD838568S1 Vise 有权
公开(公告)号：USD838568S1
公开(公告)日：2019-01-22
申请号：US29622749
申请日：2017-10-19
申请人： Chang-Yi Lin , Chang-Chih Lin
设计人： Chang-Yi Lin , Chang-Chih Lin
摘要： FIG. 1 is a perspective view of a vise showing our new design;
FIG. 2 is a front view thereof;
FIG. 3 is a rear view thereof;
FIG. 4 is a left view thereof;
FIG. 5 is a right view thereof;
FIG. 6 is a top plan view thereof; and,
FIG. 7 is a bottom plan view.
The broken lines in the drawings illustrate portions of the vise which form no part of the claimed design.
The dot-dashed line in the figures defines the boundary of claimed and unclaimed objects, and the dot-dashed line forms no part of the claimed design.

18. 发明申请

US20140021671A1 MOVABLE JAW QUICK RELEASE APPARATUS OF A VICE 有权
标题翻译：可移动的快速释放装置
公开(公告)号：US20140021671A1
公开(公告)日：2014-01-23
申请号：US13592920
申请日：2012-08-23
申请人： CHANG YI LIN , Chia-Chun Hsu , Chang-Chih Lin
发明人： CHANG YI LIN , Chia-Chun Hsu , Chang-Chih Lin
IPC分类号： B25B1/24
CPC分类号： B25B1/2405 , B25B1/103 , B25B1/2473 , Y10T29/53878
摘要： A movable jaw quick release apparatus of a vice comprises a tooth base, a movable jaw and two restriction elements. The tooth base is formed with two inclined guide grooves, each of which has a first inclined surface, a second inclined surface and a bottom surface. The left and the right side surfaces of the movable jaw are formed with a through hole respectively. Each restriction element penetrates one of the through holes and moves between a first position and a second position along one of the inclined guide groove As the movable jaw generates vibration forces, each restriction element transfers the vibration forces to the tooth base, therefore, the movable jaw do not move upwardly and shake toward a work piece and reduce its clamping force for the work piece.
摘要翻译：虎钳的可移动夹爪快速释放装置包括一个齿座，一个活动夹爪和两个限制件。齿根形成有两个倾斜的导向槽，每个倾斜的导向槽具有第一倾斜表面，第二倾斜表面和底部表面。活动夹爪的左右侧面分别形成有通孔。每个限制元件穿过一个通孔，沿着倾斜的导向槽中的一个在第一位置和第二位置之间移动。随着可动钳产生振动力，每个限制元件将振动力传递到齿座，因此可动颚不向上移动并朝向工件振动并减小其对工件的夹紧力。

19. 发明申请

US20120135562A1 METHODS OF FORMING HYDROPHOBIC SILICON DIOXIDE LAYER AND FORMING ORGANIC THIN FILM TRANSISTOR 失效
标题翻译：形成二氧化硅二氧化硅层和形成有机薄膜晶体管的方法
公开(公告)号：US20120135562A1
公开(公告)日：2012-05-31
申请号：US13006424
申请日：2011-01-14
申请人： Ching-Lin Fan , Ping-Cheng Chiu , Chang-Chih Lin
发明人： Ching-Lin Fan , Ping-Cheng Chiu , Chang-Chih Lin
IPC分类号： H01L51/40 , H01L21/31
CPC分类号： H01L21/02126 , H01L21/02274 , H01L51/0525
摘要： A method of forming a hydrophobic silicon dioxide layer is provided. A substrate is provided. Thereafter, a hydrophobic silicon dioxide layer is formed on the substrate by using a plasma chemical vapour deposition (CVD) system, in which tetraethyl orthosilicate (TEOS) and an oxygen-containing gas are introduced at a reactive temperature between 25° C. and 150° C. A method of forming an organic thin film transistor (OTFT) including the hydrophobic silicon dioxide layer as a gate insulating layer is also provided. In the present invention, the hydrophobic silicon dioxide layer can be directly formed at low temperature without using the conventional surface modification treatment. Accordingly, the process is simplified and the cost is reduced.
摘要翻译：提供形成疏水性二氧化硅层的方法。提供基板。此后，通过使用等离子体化学气相沉积（CVD）系统在衬底上形成疏水性二氧化硅层，其中在25℃至150℃的反应温度下引入原硅酸四乙酯（TEOS）和含氧气体还提供了形成包括疏水性二氧化硅层作为栅极绝缘层的有机薄膜晶体管（OTFT）的方法。在本发明中，疏水性二氧化硅层可以直接在低温下形成，而不用常规的表面改性处理。因此，简化了过程并降低了成本。

20. 发明授权

US08178447B1 Methods of forming hydrophobic silicon dioxide layer and forming organic thin film transistor 失效
标题翻译：形成疏水二氧化硅层和形成有机薄膜晶体管的方法
公开(公告)号：US08178447B1
公开(公告)日：2012-05-15
申请号：US13006424
申请日：2011-01-14
申请人： Ching-Lin Fan , Ping-Cheng Chiu , Chang-Chih Lin
发明人： Ching-Lin Fan , Ping-Cheng Chiu , Chang-Chih Lin
IPC分类号： H01L21/31
CPC分类号： H01L21/02126 , H01L21/02274 , H01L51/0525
摘要： A method of forming a hydrophobic silicon dioxide layer is provided. A substrate is provided. Thereafter, a hydrophobic silicon dioxide layer is formed on the substrate by using a plasma chemical vapor deposition (CVD) system, in which tetraethyl orthosilicate (TEOS) and an oxygen-containing gas are introduced at a reactive temperature between 25° C. and 150° C. A method of forming an organic thin film transistor (OTFT) including the hydrophobic silicon dioxide layer as a gate insulating layer is also provided. In the present invention, the hydrophobic silicon dioxide layer can be directly formed at low temperature without using the conventional surface modification treatment. Accordingly, the process is simplified and the cost is reduced.
摘要翻译：提供了形成疏水性二氧化硅层的方法。提供基板。此后，通过使用等离子体化学气相沉积（CVD）系统在衬底上形成疏水性二氧化硅层，其中在25℃至150℃的反应温度下引入原硅酸四乙酯（TEOS）和含氧气体还提供了形成包括疏水性二氧化硅层作为栅极绝缘层的有机薄膜晶体管（OTFT）的方法。在本发明中，疏水性二氧化硅层可以直接在低温下形成，而不用常规的表面改性处理。因此，简化了过程并降低了成本。

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