专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20080106925A1 CORRELATED ELECTRON MEMORY 有权
标题翻译：相关电子存储器
公开(公告)号：US20080106925A1
公开(公告)日：2008-05-08
申请号：US11937461
申请日：2007-11-08
申请人： Carlos A. Paz de Araujo , Jolanta Celinska , Matthew D. Brubaker
发明人： Carlos A. Paz de Araujo , Jolanta Celinska , Matthew D. Brubaker
IPC分类号： G11C11/00 , H01L21/00
CPC分类号： H01L45/04 , H01L27/2409 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： A non-volatile resistive switching memory that includes a homogeneous material which changes between the insulative and conductive states due to correlations between electrons, particularly via a Mott transition. The material is crystallized into the conductive state and does not require electroforming.
摘要翻译：一种非易失性电阻式开关存储器，其包括由于电子之间的相关性而导致的绝缘和导电状态之间的均匀材料，特别是通过Mott跃迁。该材料结晶成导电状态，不需要电铸。

12. 发明申请

US20080107801A1 METHOD OF MAKING A VARIABLE RESISTANCE MEMORY 审中-公开
标题翻译：制造可变电阻记忆体的方法
公开(公告)号：US20080107801A1
公开(公告)日：2008-05-08
申请号：US11937481
申请日：2007-11-08
申请人： Jolanta Celinska , Carlos A. Paz de Araujo , Matthew D. Brubaker
发明人： Jolanta Celinska , Carlos A. Paz de Araujo , Matthew D. Brubaker
IPC分类号： B05D5/12
CPC分类号： H01L45/04 , G11C13/0002 , G11C2213/79 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： A method of making a variable resistance material (VRM), the method comprising providing a precursor comprising a metallorganic or organometallic solvent containing a metal moiety suitable for forming the VRM, depositing the precursor on a substrate to form a thin film of the precursor, and heating the thin film to form the VRM. The preferred solvent comprises octane.
摘要翻译：一种制备可变电阻材料（VRM）的方法，所述方法包括提供包含含有适于形成VRM的金属部分的金属有机或有机金属溶剂的前体，将前体沉积在基底上以形成前体的薄膜，以及加热薄膜以形成VRM。优选的溶剂包括辛烷。

13. 发明申请

US20080106926A1 NON-VOLATILE RESISTANCE SWITCHING MEMORIES AND METHODS OF MAKING SAME 有权
标题翻译：非易失性电阻开关存储器及其制造方法
公开(公告)号：US20080106926A1
公开(公告)日：2008-05-08
申请号：US11937479
申请日：2007-11-08
申请人： Matthew D. Brubaker , Carlos A. Paz de Araujo , Jolanta Celinska
发明人： Matthew D. Brubaker , Carlos A. Paz de Araujo , Jolanta Celinska
IPC分类号： G11C11/00 , H01L21/00
CPC分类号： G11C13/003 , B82Y10/00 , G11C11/24 , G11C13/0007 , G11C2213/32 , G11C2213/53 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L29/685 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/146
摘要： An integrated circuit memory cell including: a semiconductor having a first active area, a second active area, and a channel between the active areas; and a layer of a variable resistance material (VRM) directly above the channel. In one embodiment, there is a first conductive layer between the VRM and the channel and a second conductive layer directly above the VRM layer. The VRM preferably is a correlated electron material (CEM). The memory cell comprises a FET, such as a JFET or a MESFET. In another embodiment, there is a layer of an insulating material between the VRM and the channel. In this case, the memory cell may include a MOSFET structure.
摘要翻译：一种集成电路存储单元，包括：具有第一有源区，第二有源区和在有源区之间的沟道的半导体; 以及在通道正上方的可变电阻材料层（VRM）。在一个实施例中，在VRM和沟道之间存在第一导电层，以及VRM层正上方的第二导电层。 VRM优选为相关电子材料（CEM）。存储单元包括FET，例如JFET或MESFET。在另一个实施例中，在VRM和通道之间存在绝缘材料层。在这种情况下，存储单元可以包括MOSFET结构。

14. 发明申请

US20080106927A1 STABILIZED RESISTIVE SWITCHING MEMORY 有权
标题翻译：稳定电阻开关存储器
公开(公告)号：US20080106927A1
公开(公告)日：2008-05-08
申请号：US11937480
申请日：2007-11-08
申请人： Jolanta Celinska , Matthew D. Brubaker , Carlos A. Paz de Araujo
发明人： Jolanta Celinska , Matthew D. Brubaker , Carlos A. Paz de Araujo
IPC分类号： G11C11/00 , H01L21/00
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616 , H01L45/1641 , H01L45/1675
摘要： A non-volatile resistive switching memory that includes a material which changes between the insulative and conductive states. The material is stabilized against charge trapping by oxygen vacancies by an extrinsic ligand, such as carbon.
摘要翻译：一种非易失性电阻式开关存储器，其包括在绝缘和导电状态之间变化的材料。该材料通过外部配体如碳稳定，防止由氧空位的电荷捕获。

15. 发明授权

US07639523B2 Stabilized resistive switching memory 有权
标题翻译：稳定电阻式开关存储器
公开(公告)号：US07639523B2
公开(公告)日：2009-12-29
申请号：US11937480
申请日：2007-11-08
申请人： Jolanta Celinska , Matthew D. Brubaker , Carlos A. Paz de Araujo
发明人： Jolanta Celinska , Matthew D. Brubaker , Carlos A. Paz de Araujo
IPC分类号： G11C11/00
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616 , H01L45/1641 , H01L45/1675
摘要： A non-volatile resistive switching memory that includes a material which changes between the insulative and conductive states. The material is stabilized against charge trapping by oxygen vacancies by an extrinsic ligand, such as carbon.
摘要翻译：一种非易失性电阻式开关存储器，其包括在绝缘和导电状态之间变化的材料。该材料通过外部配体如碳稳定，防止由氧空位的电荷捕获。

16. 发明授权

US07872900B2 Correlated electron memory 有权
标题翻译：相关电子记忆
公开(公告)号：US07872900B2
公开(公告)日：2011-01-18
申请号：US11937461
申请日：2007-11-08
申请人： Carlos A. Paz de Araujo , Jolanta Celinska , Matthew D. Brubaker
发明人： Carlos A. Paz de Araujo , Jolanta Celinska , Matthew D. Brubaker
IPC分类号： G11C11/00
CPC分类号： H01L45/04 , H01L27/2409 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： A non-volatile resistive switching memory that includes a homogeneous material which changes between the insulative and conductive states due to correlations between electrons, particularly via a Mott transition. The material is crystallized into the conductive state and does not require electroforming.
摘要翻译：一种非易失性电阻式开关存储器，其包括由于电子之间的相关性而导致的绝缘和导电状态之间的均匀材料，特别是通过Mott跃迁。该材料结晶成导电状态，不需要电铸。

17. 发明申请

US20100283028A1 NON-VOLATILE RESISTANCE SWITCHING MEMORIES AND METHODS OF MAKING SAME 审中-公开
标题翻译：非易失性电阻开关存储器及其制造方法
公开(公告)号：US20100283028A1
公开(公告)日：2010-11-11
申请号：US12840870
申请日：2010-07-21
申请人： Matthew D. Brubaker , Carlos A. Paz de Araujo , Jolanta Celinska
发明人： Matthew D. Brubaker , Carlos A. Paz de Araujo , Jolanta Celinska
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： G11C13/003 , B82Y10/00 , G11C11/24 , G11C13/0007 , G11C2213/32 , G11C2213/53 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L29/685 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/146
摘要： An integrated circuit memory cell including: a semiconductor having a first active area, a second active area, and a channel between the active areas; and a layer of a variable resistance material (VRM) directly above the channel. In one embodiment, there is a first conductive layer between the VRM and the channel and a second conductive layer directly above the VRM layer. The VRM preferably is a correlated electron material (CEM). The memory cell comprises a FET, such as a JFET or a MESFET. In another embodiment, there is a layer of an insulating material between the VRM and the channel. In this case, the memory cell may include a MOSFET structure.
摘要翻译：一种集成电路存储单元，包括：具有第一有源区，第二有源区和在有源区之间的沟道的半导体; 以及在通道正上方的可变电阻材料层（VRM）。在一个实施例中，在VRM和沟道之间存在第一导电层，以及VRM层正上方的第二导电层。 VRM优选为相关电子材料（CEM）。存储单元包括FET，例如JFET或MESFET。在另一个实施例中，在VRM和通道之间存在绝缘材料层。在这种情况下，存储单元可以包括MOSFET结构。

18. 发明授权

US07778063B2 Non-volatile resistance switching memories and methods of making same 有权
标题翻译：非易失性电阻转换存储器及其制作方法
公开(公告)号：US07778063B2
公开(公告)日：2010-08-17
申请号：US11937479
申请日：2007-11-08
申请人： Matthew D. Brubaker , Carlos A. Paz de Araujo , Jolanta Celinska
发明人： Matthew D. Brubaker , Carlos A. Paz de Araujo , Jolanta Celinska
IPC分类号： G11C11/00
CPC分类号： G11C13/003 , B82Y10/00 , G11C11/24 , G11C13/0007 , G11C2213/32 , G11C2213/53 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L29/685 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/146
摘要： An integrated circuit memory cell including: a semiconductor having a first active area, a second active area, and a channel between the active areas; and a layer of a variable resistance material (VRM) directly above the channel. In one embodiment, there is a first conductive layer between the VRM and the channel and a second conductive layer directly above the VRM layer. The VRM preferably is a correlated electron material (CEM). The memory cell comprises a FET, such as a JFET or a MESFET. In another embodiment, there is a layer of an insulating material between the VRM and the channel. In this case, the memory cell may include a MOSFET structure.
摘要翻译：一种集成电路存储单元，包括：具有第一有源区，第二有源区和在有源区之间的沟道的半导体; 以及在通道正上方的可变电阻材料层（VRM）。在一个实施例中，在VRM和沟道之间存在第一导电层，以及VRM层正上方的第二导电层。 VRM优选为相关电子材料（CEM）。存储单元包括FET，例如JFET或MESFET。在另一个实施例中，在VRM和通道之间存在绝缘材料层。在这种情况下，存储单元可以包括MOSFET结构。

19. 发明申请

US20100090172A1 STABILIZED RESISTIVE SWITCHING MEMORY 审中-公开
标题翻译：稳定电阻开关存储器
公开(公告)号：US20100090172A1
公开(公告)日：2010-04-15
申请号：US12618596
申请日：2009-11-13
申请人： Jolanta Celinska , Matthew D. Brubaker , Carlos A. Paz de Araujo
发明人： Jolanta Celinska , Matthew D. Brubaker , Carlos A. Paz de Araujo
IPC分类号： H01B1/02
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616 , H01L45/1641
摘要： A non-volatile resistive switching memory that includes a material which changes between the insulative and conductive states. The material is stabilized against charge trapping by oxygen vacancies by an extrinsic ligand, such as carbon.
摘要翻译：一种非易失性电阻式开关存储器，其包括在绝缘和导电状态之间变化的材料。该材料通过外部配体如碳稳定，防止由氧空位的电荷捕获。

20. 发明申请

US20070108385A1 Pyroelectric sensor 有权
标题翻译：热电传感器
公开(公告)号：US20070108385A1
公开(公告)日：2007-05-17
申请号：US10546613
申请日：2004-02-20
申请人： Joseph Mantese , Norman Schubring , Adolph Micheli , Carlos De Araujo , Larry McMillan , Jolanta Celinska
发明人： Joseph Mantese , Norman Schubring , Adolph Micheli , Carlos De Araujo , Larry McMillan , Jolanta Celinska
IPC分类号： G01J5/00
CPC分类号： G01J5/34
摘要： A ferroelectric/pyroelectric sensor employs a technique for determining a charge output of a ferroelectric scene element of the sensor by measuring the hysteresis loop output of the scene element several times during a particular time frame for the same temperature. An external AC signal is applied to the ferroelectric scene element to cause the hysteresis loop output from the element to switch polarization. Charge integration circuitry, such as a combination output capacitor and operational amplifier, is employed to measure the charge from the scene element. Preferably, the ferroelectric of the scene element is made of an economical and responsive strontium bismuth tantalate, SBT, or derivative thereof, disposed directly between top and bottom electrodes. Because of the frequency characteristics of the sensor, created by the external AC signal, the element need not be thermally isolated from the silicon substrate by a traditional air bridge, which is difficult to manufacture, and instead is preferably thermally isolated by spin-on-glass, SOG. To prevent saturation of an output signal voltage of the sensor by excessive charge accumulation in an output capacitor, the sensor preferably has a reference element configured electrically in parallel with the scene element. When the voltage of the AC signal is negative the output capacitor is discharged by flowing current through the reference element thus interrogating the polarization of the reference element which is compared to and subtracted from the polarization of the scene element for each cycle. The polarization difference measured for each cycle over a set time period are summed by an integrating amplifier to produce a signal output voltage.
摘要翻译：铁电/热电传感器采用用于通过在相同温度的特定时间段内多次测量场景元件的磁滞回线输出来确定传感器的铁电场景元件的电荷输出的技术。外部交流信号被施加到铁电场景元件以使得从元件输出的磁滞回线转换偏振。采用诸如组合输出电容器和运算放大器的电荷积分电路来测量场景元件中的电荷。优选地，场景元件的铁电体由直接设置在顶部和底部电极之间的经济且响应的钽酸铋铋钡，或其衍生物制成。由于由外部AC信号产生的传感器的频率特性，该元件不需要通过难以制造的传统空气桥与硅衬底热隔离，而是优选地通过旋转隔离热隔离，玻璃，SOG。为了通过输出电容器中的过度电荷积累来防止传感器的输出信号电压的饱和，传感器优选地具有与场景元件电并联配置的参考元件。当AC信号的电压为负时，输出电容器通过流过参考元件的电流而被放电，从而询问参考元件的偏振，该参考元件的偏振与每个周期的场景元素的偏振相比较和减去。在设定的时间周期内对每个周期测量的偏振差由积分放大器相加以产生信号输出电压。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式