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11. 发明授权

US08197996B2 Dual tone development processes 有权
标题翻译：双音发展过程
公开(公告)号：US08197996B2
公开(公告)日：2012-06-12
申请号：US12560873
申请日：2009-09-16
申请人： Carlos A. Fonseca , Mark Somervell , Steven Scheer
发明人： Carlos A. Fonseca , Mark Somervell , Steven Scheer
IPC分类号： G03C5/00
CPC分类号： G03F7/095 , G03F7/322 , G03F7/325
摘要： A method and system for patterning a substrate using a dual-tone development process is described. The method and system comprise using a resist material having a polymer backbone with a plurality of protecting groups attached thereto to improve process latitude and critical dimension uniformity for the dual-tone development process.
摘要翻译：描述了使用双色调显影处理图案化衬底的方法和系统。该方法和系统包括使用具有聚合物主链的抗蚀剂材料，其具有连接到其上的多个保护基，以改善双音发展过程的工艺范围和临界尺寸的一致性。

12. 发明申请

US20100055624A1 METHOD OF PATTERNING A SUBSTRATE USING DUAL TONE DEVELOPMENT 审中-公开
标题翻译：使用双音发展绘制基板的方法
公开(公告)号：US20100055624A1
公开(公告)日：2010-03-04
申请号：US12198850
申请日：2008-08-26
申请人： Roel Gronheid , Sophie Bernard , Carlos A. Fonseca , Mark Somervell , Steven Scheer
发明人： Roel Gronheid , Sophie Bernard , Carlos A. Fonseca , Mark Somervell , Steven Scheer
IPC分类号： G03F7/20
CPC分类号： G03F7/38 , G03F7/2022 , G03F7/322 , G03F7/325
摘要： A method for patterning a substrate is described. In particular, the invention relates to a method for double patterning a substrate using dual tone development. Further, the invention relates to optimizing a dual tone development process.
摘要翻译：描述了用于图案化衬底的方法。特别地，本发明涉及一种使用双音发展对基片进行双重图案化的方法。此外，本发明涉及优化双音发展过程。

13. 发明授权

US08097402B2 Using electric-field directed post-exposure bake for double-patterning (D-P) 有权
标题翻译：使用电场定向后曝光烘烤进行双重图案化（D-P）
公开(公告)号：US08097402B2
公开(公告)日：2012-01-17
申请号：US12415505
申请日：2009-03-31
申请人： Steven Scheer , Mark Somervell
发明人： Steven Scheer , Mark Somervell
IPC分类号： G03F7/20
CPC分类号： H01L21/0332 , H01L21/0337
摘要： The invention provides a method of processing a substrate using Double-Patterning (D-P) processing sequences and Electric-Field Enhanced Layers (E-FELs). The D-P processing sequences and E-FELs can be used to create lines, trenches, vias, spacers, contacts, and gate structures using a minimum number of etch processes.
摘要翻译：本发明提供使用双图案（D-P）处理序列和电场增强层（E-FEL）处理衬底的方法。 D-P处理序列和E-FEL可以用于使用最少数量的蚀刻工艺来产生线，沟槽，通孔，间隔物，接触和栅极结构。

14. 发明申请

US20100248152A1 Using Electric-Field Directed Post-Exposure Bake for Double-Patterning (D-P) 有权
标题翻译：使用电场定向后曝光烘烤进行双重图案化（D-P）
公开(公告)号：US20100248152A1
公开(公告)日：2010-09-30
申请号：US12415505
申请日：2009-03-31
申请人： Steven Scheer , Mark Somervell
发明人： Steven Scheer , Mark Somervell
IPC分类号： G03F7/20
CPC分类号： H01L21/0332 , H01L21/0337
摘要： The invention provides a method of processing a substrate using Double-Patterning (D-P) processing sequences and Electric-Field Enhanced Layers (E-FELs). The D-P processing sequences and E-FELs can be used to create lines, trenches, vias, spacers, contacts, and gate structures using a minimum number of etch processes.
摘要翻译：本发明提供使用双图案（D-P）处理序列和电场增强层（E-FEL）处理衬底的方法。 D-P处理序列和E-FEL可以用于使用最少数量的蚀刻工艺来产生线，沟槽，通孔，间隔物，接触和栅极结构。

15. 发明授权

US08449293B2 Substrate treatment to reduce pattern roughness 有权
标题翻译：底物处理减少图案粗糙度
公开(公告)号：US08449293B2
公开(公告)日：2013-05-28
申请号：US12771233
申请日：2010-04-30
申请人： Benjamin M. Rathsack , Steven Scheer , Mark H. Somervell
发明人： Benjamin M. Rathsack , Steven Scheer , Mark H. Somervell
IPC分类号： G03F7/09 , G03F7/11
CPC分类号： G03F7/09 , G03F7/0392 , G03F7/0751 , G03F7/092 , G03F7/095 , G03F7/11 , G03F7/165 , G03F7/2004
摘要： A method for patterning a substrate with extreme ultraviolet (EUV) radiation is provided. The method includes contacting a surface of the substrate with at least one surface modification agent that reacts with and bonds to the surface 402 of the substrate 401 to provide a modified surface. A layer of photoresist is formed on the modified surface, followed by exposing the layer of photoresist to a pattern of EUV radiation. The surface modification agent has a general formula: X-L-Z, where X is a leaving group; L is a linkage group including a substituted or un-substituted carbon chain having 1 to 20 carbons, a sulfur moiety, a silicon moiety, or combinations thereof; and Z is at least one of an acid functional group, a photoactive acid generator group or a halide.
摘要翻译：提供了一种用极紫外（EUV）辐射图案化衬底的方法。该方法包括使基材的表面与至少一种表面改性剂接触，所述表面改性剂与基材401的表面402反应并结合到基材401的表面402以提供改性表面。在改性表面上形成一层光致抗蚀剂，随后将该光致抗蚀剂层暴露于EUV辐射图案。表面改性剂具有以下通式：X-L-Z，其中X为离去基团; L是包含具有1至20个碳的取代或未取代的碳链，硫部分，硅部分或其组合的连接基团; Z是酸官能团，光活性酸发生剂组或卤化物中的至少一种。

16. 发明申请

US20070259162A1 Film stack having under layer for preventing pinhole defects 失效
标题翻译：薄膜叠层具有防止针孔缺陷的底层
公开(公告)号：US20070259162A1
公开(公告)日：2007-11-08
申请号：US11827014
申请日：2007-07-10
申请人： Colin Brodsky , Wai-Kin Li , Steven Scheer
发明人： Colin Brodsky , Wai-Kin Li , Steven Scheer
IPC分类号： B32B7/02
CPC分类号： B32B27/00 , Y10T428/24942 , Y10T428/2495 , Y10T428/265 , Y10T428/31504 , Y10T428/3154 , Y10T428/31544 , Y10T428/31855
摘要： A film stack is provided in which a first film including a first polymer directly contacts a surface of a substrate at which a given material is exposed. A second film, which can include a second polymer other than the first polymer, is formed to have an inner surface contacting the first film. The second film can have a thickness at which a free energy of the second film would be negative if the second film were disposed directly on the substrate. Desirably, the resulting second film is substantially free of dewetting defects.
摘要翻译：提供了一种膜叠层，其中包括第一聚合物的第一膜直接接触暴露给定材料的基板的表面。可以包括第一聚合物以外的第二聚合物的第二膜被形成为具有与第一膜接触的内表面。如果第二膜直接设置在基板上，则第二膜可以具有第二膜的自由能为负的厚度。理想地，所得到的第二膜基本上没有脱湿缺陷。

17. 发明申请

US20060148265A1 After deposition method of thinning film to reduce pinhole defects 失效
标题翻译：在减薄薄膜的沉积方法后，减少针孔缺陷
公开(公告)号：US20060148265A1
公开(公告)日：2006-07-06
申请号：US11029812
申请日：2005-01-05
申请人： Wai-Kin Lin , Colin Brodsky , Steven Scheer
发明人： Wai-Kin Lin , Colin Brodsky , Steven Scheer
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： G03F7/11 , H01L21/312
摘要： A method of forming a thin film is provided in which a film having a first thickness is deposited over a substrate, wherein the first thickness is greater than a thickness at which the initially deposited film begins to dewet from the substrate. The initially deposited film is then stabilized to form a stabilized film. Thereafter, the stabilized film is then thinned to a second thickness, such that the resulting film now has a smaller thickness than the thickness at which the initially deposited film would begin to dewet from the substrate. However, as a result of the prior stabilization, the reduced thickness film remains free of dewetting defects.
摘要翻译：提供了一种形成薄膜的方法，其中具有第一厚度的膜沉积在基底上，其中第一厚度大于初始沉积的膜开始从基底露出的厚度。然后将初始沉积的膜稳定以形成稳定的膜。此后，将稳定的薄膜变薄至第二厚度，使得所得到的薄膜现在具有比初始沉积的薄膜将从基底开始露出的厚度更小的厚度。然而，由于现有的稳定性，减薄膜仍然没有脱湿缺陷。

18. 发明授权

US07483804B2 Method of real time dynamic CD control 有权
标题翻译：实时动态CD控制方法
公开(公告)号：US07483804B2
公开(公告)日：2009-01-27
申请号：US11537085
申请日：2006-09-29
申请人： Steven Scheer
发明人： Steven Scheer
IPC分类号： G01N21/00 , G03B27/72 , G03C5/00 , G06F15/00
CPC分类号： G01N21/4788 , G03F7/70558 , G03F7/70625
摘要： A method of real time dynamic CD control in a system for patterning resist coated wafers. The method includes lithographically patterning the resist coated wafers using predetermined exposure dose and focus settings. The method further includes obtaining CD metrology data from test areas on the patterned wafers, where different groups of test areas are selected for two or more of the patterned wafers. A CD metrology data map is constructed using the CD metrology data, adjusted exposure dose and/or focus settings are established using the CD metrology data, and additional wafers are then patterned.
摘要翻译：用于图案化抗蚀涂层晶片的系统中的实时动态CD控制的方法。该方法包括使用预定的曝光剂量和聚焦设置对抗蚀剂涂覆的晶片进行光刻图案化。该方法还包括从图案化晶片上的测试区域获得CD测量数据，其中针对两个或多个图案化晶片选择不同组的测试区域。使用CD测量数据构建CD测量数据图，使用CD测量数据建立调整的曝光剂量和/或焦点设置，然后对附加的晶片进行图案化。

19. 发明申请

US20080241400A1 VACUUM ASSIST METHOD AND SYSTEM FOR REDUCING INTERMIXING OF LITHOGRAPHY LAYERS 审中-公开
标题翻译：真空辅助方法和系统，用于减少平面层的夹杂
公开(公告)号：US20080241400A1
公开(公告)日：2008-10-02
申请号：US11694963
申请日：2007-03-31
申请人： Steven Scheer , Kathleen Nafus
发明人： Steven Scheer , Kathleen Nafus
IPC分类号： B05D3/00
CPC分类号： G03F7/091 , G03F7/168
摘要： Embodiments of an apparatus and methods for curing a plurality of lithography layers while reducing the level of intermixing are generally described herein. Other embodiments may be described and claimed.
摘要翻译：本文通常描述用于固化多个光刻层同时降低混合水平的装置和方法的实施例。可以描述和要求保护其他实施例。

20. 发明申请

US20080079934A1 METHOD OF REAL TIME DYNAMIC CD CONTROL 有权
标题翻译：实时动态CD控制方法
公开(公告)号：US20080079934A1
公开(公告)日：2008-04-03
申请号：US11537085
申请日：2006-09-29
申请人： Steven Scheer
发明人： Steven Scheer
IPC分类号： G01N21/00
CPC分类号： G01N21/4788 , G03F7/70558 , G03F7/70625
摘要： A method of real time dynamic CD control in a system for patterning resist coated wafers. The method includes lithographically patterning the resist coated wafers using predetermined exposure dose and focus settings. The method further includes obtaining CD metrology data from test areas on the patterned wafers, where different groups of test areas are selected for two or more of the patterned wafers. A CD metrology data map is constructed using the CD metrology data, adjusted exposure dose and/or focus settings are established using the CD metrology data, and additional wafers are then patterned.
摘要翻译：用于图案化抗蚀涂层晶片的系统中的实时动态CD控制的方法。该方法包括使用预定的曝光剂量和聚焦设置对抗蚀剂涂覆的晶片进行光刻图案化。该方法还包括从图案化晶片上的测试区域获得CD测量数据，其中针对两个或多个图案化晶片选择不同组的测试区域。使用CD测量数据构建CD测量数据图，使用CD测量数据建立调整的曝光剂量和/或焦点设置，然后对附加的晶片进行图案化。

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