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    • 14. 发明授权
    • Method of manufacturing a light-emitting element and method of manufacturing a display substrate using the same
    • 发光元件的制造方法及其制造方法
    • US08211491B2
    • 2012-07-03
    • US12357327
    • 2009-01-21
    • Jae-Kook HaChang-Woong ChuJin-Koo ChungJoo-Hyeon Lee
    • Jae-Kook HaChang-Woong ChuJin-Koo ChungJoo-Hyeon Lee
    • B05D7/22
    • H01L51/56H01L51/0003H01L51/0007H01L51/5012H01L51/5048
    • In accordance with one or more embodiments of the present disclosure, a method of manufacturing a light-emitting element includes forming an anode on a substrate, forming a first transport layer including one or more first polar compounds on the anode, forming a first non-polar solvent layer on the first transport layer, forming a first polar solution layer including one or more light-emitting compounds on the first non-polar solution layer, drying a polar solvent of the first polar solution layer and the first non-polar solvent layer so that a light-emitting layer including the one or more light-emitting compounds is formed on the first transport layer and forming a cathode on the light-emitting layer. The cathode is disposed opposite to the anode. As such, damage to the first transport layer may be reduced when forming the light-emitting layer, which may improve the reliability and productivity of a manufacturing process.
    • 根据本公开的一个或多个实施例,制造发光元件的方法包括在衬底上形成阳极,在阳极上形成包括一个或多个第一极性化合物的第一传输层, 在第一传输层上形成极性溶剂层,在第一非极性溶液层上形成包含一种或多种发光化合物的第一极性溶液层,干燥第一极性溶液层和第一非极性溶剂层的极性溶剂 使得在第一传输层上形成包含一种或多种发光化合物的发光层,并在发光层上形成阴极。 阴极与阳极相对设置。 因此,当形成发光层时,可能减少对第一传输层的损伤,这可以提高制造工艺的可靠性和生产率。
    • 16. 发明申请
    • METHOD OF MANUFACTURING A LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE SAME
    • 发光元件的制造方法及使用其制造显示基板的方法
    • US20090221209A1
    • 2009-09-03
    • US12357327
    • 2009-01-21
    • Jae-Kook HAChang-Woong ChuJin-Koo ChungJoo-Hyeon Lee
    • Jae-Kook HAChang-Woong ChuJin-Koo ChungJoo-Hyeon Lee
    • H01J9/00
    • H01L51/56H01L51/0003H01L51/0007H01L51/5012H01L51/5048
    • In accordance with one or more embodiments of the present disclosure, a method of manufacturing a light-emitting element includes forming an anode on a substrate, forming a first transport layer including one or more first polar compounds on the anode, forming a first non-polar solvent layer on the first transport layer, forming a first polar solution layer including one or more light-emitting compounds on the first non-polar solution layer, drying a polar solvent of the first polar solution layer and the first non-polar solvent layer so that a light-emitting layer including the one or more light-emitting compounds is formed on the first transport layer and forming a cathode on the light-emitting layer. The cathode is disposed opposite to the anode. As such, damage to the first transport layer may be reduced when forming the light-emitting layer, which may improve the reliability and productivity of a manufacturing process.
    • 根据本公开的一个或多个实施例,制造发光元件的方法包括在衬底上形成阳极,在阳极上形成包括一个或多个第一极性化合物的第一传输层, 在第一传输层上形成极性溶剂层,在第一非极性溶液层上形成包含一种或多种发光化合物的第一极性溶液层,干燥第一极性溶液层和第一非极性溶剂层的极性溶剂 使得在第一传输层上形成包含一种或多种发光化合物的发光层,并在发光层上形成阴极。 阴极与阳极相对设置。 因此,当形成发光层时,可能减少对第一传输层的损伤,这可以提高制造工艺的可靠性和生产率。
    • 17. 发明授权
    • Organic light emitting device
    • 有机发光装置
    • US08283852B2
    • 2012-10-09
    • US12473904
    • 2009-05-28
    • Sung-Soo LeeJoo-Hyeon Lee
    • Sung-Soo LeeJoo-Hyeon Lee
    • H01L51/50
    • H01L51/5265H01L51/5215
    • An organic light emitting device includes: a substrate; thin film structures formed on the substrate; a pixel electrode including a metal layer formed on the thin film structures, and a transparent conductor layer formed on the metal layer; a common electrode facing the pixel electrode; and an organic light emitting member disposed between the pixel electrode and the common electrode, wherein the organic light emitting member includes an emission layer and a plurality of auxiliary layers, and the profile thickness of a first layer as at least one layer among the emission layer and the auxiliary layers on the substrate is different from the profile thickness of at least one second layer that is different from the first layer among the emission layer and the auxiliary layers.
    • 一种有机发光器件包括:衬底; 形成在基板上的薄膜结构; 包括形成在所述薄膜结构上的金属层的像素电极和形成在所述金属层上的透明导体层; 面对像素电极的公共电极; 以及设置在所述像素电极和所述公共电极之间的有机发光部件,其中所述有机发光部件包括发光层和多个辅助层,并且所述发光层中的至少一层的第一层的轮廓厚度 衬底上的辅助层与发光层和辅助层中与第一层不同的至少一个第二层的轮廓厚度不同。
    • 19. 发明授权
    • Method of manufacturing image sensor
    • 图像传感器的制造方法
    • US07713774B2
    • 2010-05-11
    • US11847691
    • 2007-08-30
    • Joo-Hyeon Lee
    • Joo-Hyeon Lee
    • H01L21/00H01L21/302H01L21/461
    • H01L27/14689H01L27/14601H01L27/1463H01L27/14643
    • Embodiments relate to a method of manufacturing an image sensor which may include forming a gate pattern including a tunnel oxide film, an oxide-nitride-oxide (ONO) film, a floating gate and a control gate over a semiconductor substrate. An oxide film and a nitride film may be formed over the semiconductor substrate including the gate pattern. A photoresist pattern may be formed which covers the oxide film and the nitride film formed over the gate pattern. The nitride film may be etched in a region not covered by the photoresist pattern. The oxide film may be etched to have a predetermined thickness. A deep implant process may deeply implant an N-type dopant into the semiconductor substrate. Ashing and cleaning processes may remove the remaining photoresist pattern.
    • 实施例涉及制造图像传感器的方法,其可以包括在半导体衬底上形成包括隧道氧化物膜,氧化物 - 氧化物 - 氧化物(ONO)膜,浮置栅极和控制栅极的栅极图案。 可以在包括栅极图案的半导体衬底上形成氧化物膜和氮化物膜。 可以形成覆盖氧化膜和在栅极图案上形成的氮化物膜的光致抗蚀剂图案。 可以在未被光致抗蚀剂图案覆盖的区域中蚀刻氮化物膜。 氧化膜可以被蚀刻以具有预定的厚度。 深注入工艺可以将N型掺杂剂深入注入到半导体衬底中。 灰化和清洁过程可以去除剩余的光致抗蚀剂图案。