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    • 13. 发明申请
    • Performing Stuck-At Testing Using Multiple Isolation Circuits
    • 使用多重隔离电路进行测试
    • US20120314516A1
    • 2012-12-13
    • US13157433
    • 2011-06-10
    • Brian J. CampbellDaniel C. MurrayConrad H. Ziesler
    • Brian J. CampbellDaniel C. MurrayConrad H. Ziesler
    • G11C7/00
    • G11C29/04G11C8/08G11C29/30G11C2029/1202
    • A memory may include a memory array, a plurality of control circuits, and a plurality of isolation circuits. The plurality of control circuits may be configured to generate control signals for the memory array. For example, the plurality of control circuits may include a plurality of word line driver circuits. The plurality of isolation circuits may be configured to receive the control signals from the plurality of control circuits and a plurality of isolation signals. A first isolation signal may correspond to the plurality of word line driver circuits and at least one second isolation signal may correspond to other ones of the plurality of control circuits. The first isolation signal and the second isolation signal may be independently controlled during memory tests to detect stuck-at faults associated with the plurality of isolation signals.
    • 存储器可以包括存储器阵列,多个控制电路和多个隔离电路。 多个控制电路可以被配置为产生用于存储器阵列的控制信号。 例如,多个控制电路可以包括多个字线驱动电路。 多个隔离电路可以被配置为从多个控制电路接收控制信号和多个隔离信号。 第一隔离信号可以对应于多个字线驱动器电路,并且至少一个第二隔离信号可以对应于多个控制电路中的其它控制电路。 可以在存储器测试期间独立地控制第一隔离信号和第二隔离信号,以检测与多个隔离信号相关联的卡入故障。
    • 14. 发明授权
    • Leakage and NBTI reduction technique for memory
    • 记忆泄漏和NBTI降低技术
    • US08203898B2
    • 2012-06-19
    • US13171748
    • 2011-06-29
    • Brian J. CampbellGreg M. HessHang Huang
    • Brian J. CampbellGreg M. HessHang Huang
    • G11C7/00
    • G11C7/04G11C7/12G11C7/22G11C7/222G11C7/225
    • In one embodiment, an integrated circuit includes a logic circuit and a memory circuit that includes multiple bit lines and bit line precharge circuits. The memory circuit may include level shifters for control signals generated from logic circuit inputs, and particularly there may be one or more level shifters that generate precharge enable signals to control the bit line precharge circuits. The level shifters for the bit line precharge circuits may also be controlled, during periods of time that the memory circuit is idle, by an input control signal (FloatBL herein). If the FloatBL signal is asserted, the bit line precharge circuits may be disabled to float the bit lines. In some embodiments, the FloatBL signal may also disable bit line bit line hold circuits on the bit lines. In some embodiments, when the memory circuit is exiting an idle state, the bit line precharge circuits may be enabled in a staggered fashion.
    • 在一个实施例中,集成电路包括逻辑电路和包括多个位线和位线预充电电路的存储器电路。 存储器电路可以包括用于由逻辑电路输入产生的控制信号的电平移位器,特别地,可以有一个或多个电平移位器产生预充电使能信号以控制位线预充电电路。 用于位线预充电电路的电平移位器也可以通过输入控制信号(这里为FloatBL)在存储器电路空闲的时间段期间被控制。 如果FloatBL信号有效,则可能禁止位线预充电电路浮动位线。 在一些实施例中,FloatBL信号还可以禁止位线上的位线位线保持电路。 在一些实施例中,当存储器电路退出空闲状态时,位线预充电电路可以以交错方式启用。
    • 15. 发明申请
    • Leakage and NBTI Reduction Technique for Memory
    • 记忆泄漏和NBTI减少技术
    • US20100329062A1
    • 2010-12-30
    • US12492364
    • 2009-06-26
    • Brian J. CampbellGreg M. HessHang Huang
    • Brian J. CampbellGreg M. HessHang Huang
    • G11C5/14G11C7/00
    • G11C7/04G11C7/12G11C7/22G11C7/222G11C7/225
    • In one embodiment, an integrated circuit includes a logic circuit and a memory circuit that includes multiple bit lines and bit line precharge circuits. The memory circuit may include level shifters for control signals generated from logic circuit inputs, and particularly there may be one or more level shifters that generate precharge enable signals to control the bit line precharge circuits. The level shifters for the bit line precharge circuits may also be controlled, during periods of time that the memory circuit is idle, by an input control signal (FloatBL herein). If the FloatBL signal is asserted, the bit line precharge circuits may be disabled to float the bit lines. In some embodiments, the FloatBL signal may also disable bit line bit line hold circuits on the bit lines. In some embodiments, when the memory circuit is exiting an idle state, the bit line precharge circuits may be enabled in a staggered fashion.
    • 在一个实施例中,集成电路包括逻辑电路和包括多个位线和位线预充电电路的存储器电路。 存储电路可以包括用于由逻辑电路输入产生的控制信号的电平移位器,特别地,可以有一个或多个电平移位器产生预充电使能信号以控制位线预充电电路。 用于位线预充电电路的电平移位器也可以通过输入控制信号(这里为FloatBL)在存储器电路空闲的时间段期间被控制。 如果FloatBL信号有效,则可能禁止位线预充电电路浮动位线。 在一些实施例中,FloatBL信号还可以禁止位线上的位线位线保持电路。 在一些实施例中,当存储器电路退出空闲状态时,位线预充电电路可以以交错方式启用。
    • 18. 发明申请
    • Low Latency, Power-Down Safe Level Shifter
    • 低延迟,掉电安全电平移位器
    • US20100085079A1
    • 2010-04-08
    • US12634791
    • 2009-12-10
    • Brian J. CampbellVincent R. von Kaenel
    • Brian J. CampbellVincent R. von Kaenel
    • H03K19/094
    • H03K3/35613G11C5/14H03K3/012
    • In one embodiment, an apparatus comprises a circuit supplied by a first supply voltage during use, the circuit having at least a first input signal; and a level shifter supplied by the first supply voltage during use and coupled to provide the first input signal to the circuit. The level shifter is coupled to receive a second input signal sourced from circuitry supplied by a second supply voltage during use, and is configured to generate the first input signal by level shifting the second input signal. Coupled to receive a power control signal indicating, when asserted, that the second supply voltage is to be powered down, the level shifter is configured to assert a predetermined level on the first input signal independent of the second input signal and responsive to an assertion of the power control signal.
    • 在一个实施例中,一种装置包括在使用期间由第一电源电压提供的电路,该电路至少具有第一输入信号; 以及在使用期间由第一电源电压提供的电平移位器,并被耦合以向该电路提供第一输入信号。 电平移位器被耦合以接收来自在使用期间由第二电源电压提供的电路的第二输入信号,并且被配置为通过电平移位第二输入信号来产生第一输入信号。 耦合以接收功率控制信号,该信号指示当断言第二电源电压要断电时,电平移位器被配置为独立于第二输入信号来声明第一输入信号上的预定电平,并且响应于断言 功率控制信号。
    • 20. 发明授权
    • Dynamic to static converter with noise suppression
    • 具有噪声抑制的动态到静态转换器
    • US06989691B2
    • 2006-01-24
    • US10748639
    • 2003-12-30
    • Brian J. Campbell
    • Brian J. Campbell
    • H03K19/096
    • H03K3/356173H03K19/01855
    • An apparatus is disclosed which includes a converter circuit and a noise suppression circuit. The converter circuit has a dynamic logic input, and is configured to generate a static logic output on an output node responsive to the dynamic logic input. The noise suppression circuit is coupled to receive a clock signal and is coupled to the output node. Responsive to a first phase of the clock signal, a precharge of a dynamic logic circuit generating the dynamic logic input occurs. The noise suppression circuit is configured to actively drive the static logic output on the output node responsive to the first phase. In some embodiments, the noise suppression circuit may reduce the noise sensitivity of the static logic output during the precharge phase, and may not impede operation of the converter circuit during the evaluate phase.
    • 公开了一种包括转换器电路和噪声抑制电路的装置。 转换器电路具有动态逻辑输入,并且被配置为响应于动态逻辑输入在输出节点上产生静态逻辑输出。 噪声抑制电路被耦合以接收时钟信号并耦合到输出节点。 响应于时钟信号的第一相位,发生产生动态逻辑输入的动态逻辑电路的预充电。 噪声抑制电路被配置为响应于第一阶段主动地驱动输出节点上的静态逻辑输出。 在一些实施例中,噪声抑制电路可以降低在预充电阶段期间静态逻辑输出的噪声灵敏度,并且可能不妨碍在评估阶段期间转换器电路的操作。