专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US07994071B2 Compositions for forming organic insulating films, methods for forming organic insulating films using the compositions and organic thin film transistors comprising an organic insulating film formed by such a method 有权
标题翻译：用于形成有机绝缘膜的组合物，使用该组合物形成有机绝缘膜的方法和包括通过这种方法形成的有机绝缘膜的有机薄膜晶体管
公开(公告)号：US07994071B2
公开(公告)日：2011-08-09
申请号：US11633008
申请日：2006-12-04
申请人： Bon Won Koo , Sang Yoon Lee , Jung Seok Hahn , Joo Young Kim
发明人： Bon Won Koo , Sang Yoon Lee , Jung Seok Hahn , Joo Young Kim
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L51/052 , H01L51/0003 , H01L51/0036 , H01L51/0545
摘要： Disclosed are compositions for forming organic insulating films and methods for forming organic insulating films using one or more of the compositions. The compositions include at least one ultraviolet (UV) curing agent, at least one water-soluble polymer and at least one water-soluble fluorine compound, and the method includes applying the composition to a substrate to form a coating layer, irradiating the coating layer with UV light to form an exposed layer and developing the exposed layer with an aqueous developing solution to obtain an organic insulating film and/or pattern. Also disclosed are organic thin film transistors comprising an organic insulating film formed by one of the methods using one of the compositions that may exhibit improved hysteresis performance and/or acceptable surface properties without the need for additional processing, thereby simplifying the fabrication process.
摘要翻译：公开了用于形成有机绝缘膜的组合物和使用一种或多种组合物形成有机绝缘膜的方法。该组合物包括至少一种紫外线（UV）固化剂，至少一种水溶性聚合物和至少一种水溶性氟化合物，并且该方法包括将该组合物施用于基材以形成涂层，照射该涂层用UV光形成曝光层，并用含水显影液显影曝光层，得到有机绝缘膜和/或图案。还公开了有机薄膜晶体管，其包括通过使用可以显示出改进的滞后性能和/或可接受的表面性质的组合物之一的方法之一形成的有机绝缘膜，而不需要额外的处理，从而简化了制造工艺。

12. 发明申请

US20070259476A1 Compositions for forming organic insulating films, methods for forming organic insulating films using the compositions and organic thin film transistors comprising an organic insulating film formed by such a method 有权
标题翻译：用于形成有机绝缘膜的组合物，使用该组合物形成有机绝缘膜的方法和包括通过这种方法形成的有机绝缘膜的有机薄膜晶体管
公开(公告)号：US20070259476A1
公开(公告)日：2007-11-08
申请号：US11633008
申请日：2006-12-04
申请人： Bon Won Koo , Sang Yoon Lee , Jung Seok Hahn , Joo Young Kim
发明人： Bon Won Koo , Sang Yoon Lee , Jung Seok Hahn , Joo Young Kim
IPC分类号： H01L51/40
CPC分类号： H01L51/052 , H01L51/0003 , H01L51/0036 , H01L51/0545
摘要： Disclosed are compositions for forming organic insulating films and methods for forming organic insulating films using one or more of the compositions. The compositions include at least one ultraviolet (UV) curing agent, at least one water-soluble polymer and at least one water-soluble fluorine compound, and the method includes applying the composition to a substrate to form a coating layer, irradiating the coating layer with UV light to form an exposed layer and developing the exposed layer with an aqueous developing solution to obtain an organic insulating film and/or pattern. Also disclosed are organic thin film transistors comprising an organic insulating film formed by one of the methods using one of the compositions that may exhibit improved hysteresis performance and/or acceptable surface properties without the need for additional processing, thereby simplifying the fabrication process.
摘要翻译：公开了用于形成有机绝缘膜的组合物和使用一种或多种组合物形成有机绝缘膜的方法。该组合物包括至少一种紫外线（UV）固化剂，至少一种水溶性聚合物和至少一种水溶性氟化合物，并且该方法包括将该组合物施用于基材以形成涂层，照射该涂层用UV光形成曝光层，并用含水显影液显影曝光层，得到有机绝缘膜和/或图案。还公开了有机薄膜晶体管，其包括通过使用可以显示出改进的滞后性能和/或可接受的表面性质的组合物之一的方法之一形成的有机绝缘膜，而不需要额外的处理，从而简化了制造工艺。

13. 发明申请

US20090032809A1 Organic thin film transistor and method of manufacturing the same 审中-公开
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US20090032809A1
公开(公告)日：2009-02-05
申请号：US12078748
申请日：2008-04-04
申请人： Do Hwan Kim , Jung Seok Hahn , Sang Yoon Lee , Bon Won Koo , Hyun Sik Moon
发明人： Do Hwan Kim , Jung Seok Hahn , Sang Yoon Lee , Bon Won Koo , Hyun Sik Moon
IPC分类号： H01L51/05 , H01L51/40
CPC分类号： H01L51/0512 , H01L51/0012 , H01L51/0037 , H01L51/0529
摘要： Disclosed are an organic thin film transistor and a method of manufacturing the same, in which a crystalline organic binder layer is on the surface of an organic insulating layer and source/drain electrodes or on the surface of the source/drain electrodes. The organic thin film transistor may be improved in two-dimensional geometric lattice matching and interface stability at the interface between the organic semiconductor and the insulating layer or at the interface between the organic semiconductor layer and the electrode, thereby improving the electrical properties of the device.
摘要翻译：公开了一种有机薄膜晶体管及其制造方法，其中结晶有机粘合剂层位于有机绝缘层和源/漏电极的表面上或源/漏电极的表面上。有机薄膜晶体管可以在有机半导体和绝缘层之间的界面处或在有机半导体层和电极之间的界面处的二维几何晶格匹配和界面稳定性得到改善，从而改善了器件的电性能。

14. 发明申请

US20090045396A1 Composition for forming passivation layer and organic thin film transistor comprising the passivation layer 有权
标题翻译：用于形成钝化层的组合物和包含钝化层的有机薄膜晶体管
公开(公告)号：US20090045396A1
公开(公告)日：2009-02-19
申请号：US12078403
申请日：2008-03-31
申请人： Jung Seok Hahn , Do Hwan Kim , Bon Won Koo , Sang Yoon Lee , Hyun Sik Moon
发明人： Jung Seok Hahn , Do Hwan Kim , Bon Won Koo , Sang Yoon Lee , Hyun Sik Moon
IPC分类号： H01L51/05 , G03F7/00 , H01L51/40 , C08F2/46
CPC分类号： G03F7/092 , G03F7/0046 , G03F7/038
摘要： Disclosed herein is a composition including a perfluoropolyether derivative, a photosensitive polymer or a copolymer thereof, and a photocuring agent, a passivation layer, organic thin film transistor, and electronic device including the same, a method of forming the passivation layer and methods of fabricating the organic thin film transistor and electronic device. The organic thin film transistor may prevent or reduce oxygen and moisture from infiltrating thereinto, and thus may prevent or reduce the degradation of the performance thereof caused by ambient air, prevent or reduce the deterioration thereof, and may more easily be formed into a pattern, thereby exhibiting characteristics suitable for use in electronics.
摘要翻译：本文公开了包含全氟聚醚衍生物，光敏聚合物或其共聚物，光固化剂，钝化层，有机薄膜晶体管和包括其的电子器件的组合物，形成钝化层的方法和制造方法有机薄膜晶体管和电子器件。有机薄膜晶体管可以防止或减少氧气和水分渗入其中，从而可以防止或减少由环境空气引起的性能的劣化，防止或减少其劣化，并且可以更容易地形成为图案，从而表现出适用于电子设备的特性。

15. 发明授权

US07781763B2 Composition for forming passivation layer and organic thin film transistor comprising the passivation layer 有权
标题翻译：用于形成钝化层的组合物和包含钝化层的有机薄膜晶体管
公开(公告)号：US07781763B2
公开(公告)日：2010-08-24
申请号：US12078403
申请日：2008-03-31
申请人： Jung Seok Hahn , Do Hwan Kim , Bon Won Koo , Sang Yoon Lee , Hyun Sik Moon
发明人： Jung Seok Hahn , Do Hwan Kim , Bon Won Koo , Sang Yoon Lee , Hyun Sik Moon
IPC分类号： H01L51/05 , G03F7/00 , H01L51/40 , C08F2/46
CPC分类号： G03F7/092 , G03F7/0046 , G03F7/038
摘要： Disclosed herein is a composition including a perfluoropolyether derivative, a photosensitive polymer or a copolymer thereof, and a photocuring agent, a passivation layer, organic thin film transistor, and electronic device including the same, a method of forming the passivation layer and methods of fabricating the organic thin film transistor and electronic device. The organic thin film transistor may prevent or reduce oxygen and moisture from infiltrating thereinto, and thus may prevent or reduce the degradation of the performance thereof caused by ambient air, prevent or reduce the deterioration thereof, and may more easily be formed into a pattern, thereby exhibiting characteristics suitable for use in electronics.
摘要翻译：本文公开了包含全氟聚醚衍生物，光敏聚合物或其共聚物，光固化剂，钝化层，有机薄膜晶体管和包括其的电子器件的组合物，形成钝化层的方法和制造方法有机薄膜晶体管和电子器件。有机薄膜晶体管可以防止或减少氧气和水分渗入其中，从而可以防止或减少由环境空气引起的性能的劣化，防止或减少其劣化，并且可以更容易地形成为图案，从而表现出适用于电子设备的特性。

16. 发明授权

US07868322B2 Method for fabricating an organic thin film transistor by oxidation and selective reduction of organic semiconductor material 有权
标题翻译：通过氧化还原有机半导体材料制造有机薄膜晶体管的方法
公开(公告)号：US07868322B2
公开(公告)日：2011-01-11
申请号：US11819036
申请日：2007-06-25
申请人： Do Hwan Kim , Jung Seok Hahn , Sang Yoon Lee , Bon Won Koo
发明人： Do Hwan Kim , Jung Seok Hahn , Sang Yoon Lee , Bon Won Koo
IPC分类号： H01L51/30 , H01L51/40
CPC分类号： H01L51/0545 , H01L51/0021 , H01L51/105
摘要： Disclosed is a method for fabricating an organic thin film transistor by oxidation and selective reduction of an organic semiconductor material. According to the method, stability of interfaces between a semiconductor layer and source/drain electrodes of an organic thin film transistor may be guaranteed. Therefore, an organic thin film transistor fabricated by the method may exhibit improved performance characteristics, e.g., minimized or decreased contact resistance and increased charge carrier mobility.
摘要翻译：公开了通过有机半导体材料的氧化和选择性还原来制造有机薄膜晶体管的方法。根据该方法，可以保证半导体层与有机薄膜晶体管的源极/漏极之间的界面的稳定性。因此，通过该方法制造的有机薄膜晶体管可以表现出改进的性能特性，例如最小化或降低的接触电阻和增加的电荷载流子迁移率。

17. 发明申请

US20080128684A1 Method for fabricating an organic thin film transistor by oxidation and selective reduction of organic semiconductor material 有权
标题翻译：通过氧化还原有机半导体材料制造有机薄膜晶体管的方法
公开(公告)号：US20080128684A1
公开(公告)日：2008-06-05
申请号：US11819036
申请日：2007-06-25
申请人： Do Hwan Kim , Jung Seok Hahn , Sang Yoon Lee , Bon Won Koo
发明人： Do Hwan Kim , Jung Seok Hahn , Sang Yoon Lee , Bon Won Koo
IPC分类号： H01L51/40 , H01L51/00
CPC分类号： H01L51/0545 , H01L51/0021 , H01L51/105
摘要： Disclosed is a method for fabricating an organic thin film transistor by oxidation and selective reduction of an organic semiconductor material. According to the method, stability of interfaces between a semiconductor layer and source/drain electrodes of an organic thin film transistor may be guaranteed. Therefore, an organic thin film transistor fabricated by the method may exhibit improved performance characteristics, e.g., minimized or decreased contact resistance and increased charge carrier mobility.
摘要翻译：公开了通过有机半导体材料的氧化和选择性还原来制造有机薄膜晶体管的方法。根据该方法，可以保证半导体层与有机薄膜晶体管的源极/漏极之间的界面的稳定性。因此，通过该方法制造的有机薄膜晶体管可以表现出改进的性能特性，例如最小化或降低的接触电阻和增加的电荷载流子迁移率。

18. 发明授权

US07547574B2 Organic thin film transistor(s) and method(s) for fabricating the same 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US07547574B2
公开(公告)日：2009-06-16
申请号：US11297396
申请日：2005-12-09
申请人： Hyun Jung Park , Sang Yoon Lee , Eun Jeong Jeong , Kook Min Han , Jung Seok Hahn , Tae Woo Lee
发明人： Hyun Jung Park , Sang Yoon Lee , Eun Jeong Jeong , Kook Min Han , Jung Seok Hahn , Tae Woo Lee
IPC分类号： H01L51/40
CPC分类号： H01L51/105 , H01L51/0055 , H01L51/052
摘要： Example embodiments of the present invention for fabricating an organic thin film transistor including a substrate, a gate electrode, a gate insulating layer, metal oxide source/drain electrodes and an organic semiconductor layer wherein the metal oxide source/drain electrodes are surface-treated with a self-assembled monolayer (SAM) forming compound containing a sulfonic acid group. According to example embodiments of the present invention, the surface of the source/drain electrodes may be modified to be more hydrophobic and/or the work function of a metal oxide constituting the source/drain electrodes may be increased to above that of an organic semiconductor material constituting the organic semiconductor layer. Organic thin film transistors fabricated according to one or more example embodiments of the present invention may exhibit higher charge carrier mobility. Also disclosed are various example devices including display devices having organic thin film transistors made by example embodiments of the present invention.
摘要翻译：本发明的制造有机薄膜晶体管的示例实施例包括基板，栅电极，栅极绝缘层，金属氧化物源极/漏极和有机半导体层，其中金属氧化物源极/漏极用包含磺酸基团的自组装单层（SAM）形成化合物。根据本发明的示例性实施例，源/漏电极的表面可以被修改为更疏水，和/或构成源/漏电极的金属氧化物的功函数可以增加到高于有机半导体的功函数构成有机半导体层的材料。根据本发明的一个或多个示例性实施例制造的有机薄膜晶体管可以表现出更高的载流子迁移率。还公开了包括具有由本发明的示例性实施例制成的有机薄膜晶体管的显示器件的各种示例器件。

19. 发明授权

US08273460B2 Composition for preparing organic insulating film, organic insulating film prepared by using the same and organic thin film transistor comprising the organic insulating film 有权
标题翻译：用于制备有机绝缘膜的组合物，使用该有机绝缘膜制备的有机绝缘膜和包含有机绝缘膜的有机薄膜晶体管
公开(公告)号：US08273460B2
公开(公告)日：2012-09-25
申请号：US11783136
申请日：2007-04-06
申请人： Eun Kyung Lee , Joo Young Kim , Sang Yoon Lee , Jung Seok Hahn
发明人： Eun Kyung Lee , Joo Young Kim , Sang Yoon Lee , Jung Seok Hahn
IPC分类号： B32B15/04 , H01L51/30 , C08G65/38
CPC分类号： H01L51/052 , H01L51/0541 , H01L51/0545 , Y10T428/31678
摘要： Disclosed are a composition comprising an organic insulating polymer in which a photo-reactive functional group showing an increased crosslinking degree is introduced into a side-chain, an organic insulating film comprising the composition, an organic thin film transistor (OTFT) comprising the organic insulating film, an electronic device comprising the organic thin film transistor and methods of fabricating the organic insulating film, the organic thin film transistor and the electronic device. The OTFT comprising the organic insulating film of example embodiments may not show any hysteresis during the driving of the OTFT, and therefore, may exhibit a homogeneous property.
摘要翻译：公开了一种组合物，其包含其中将具有增加的交联度的光反应性官能团引入侧链的有机绝缘聚合物，包含该组合物的有机绝缘膜，包含有机绝缘体的有机薄膜晶体管（OTFT）膜，包括有机薄膜晶体管的电子器件和制造有机绝缘膜，有机薄膜晶体管和电子器件的方法。包含示例性实施例的有机绝缘膜的OTFT在驱动OTFT期间可能不显示任何滞后，因此可以表现出均匀的性质。

20. 发明申请

US20110204350A1 Composition and organic insulating film prepared using the same 有权
标题翻译：组合物和使用其制备的有机绝缘膜
公开(公告)号：US20110204350A1
公开(公告)日：2011-08-25
申请号：US13067002
申请日：2011-05-02
申请人： Jung Seok Hahn , Eun Kyung Lee , Sang Yoon Lee , Eun Jeong Jeong , Joo Young Kim
发明人： Jung Seok Hahn , Eun Kyung Lee , Sang Yoon Lee , Eun Jeong Jeong , Joo Young Kim
IPC分类号： H01L51/10 , C08K5/5455 , C08K5/5465
CPC分类号： H01L51/052
摘要： Disclosed is a composition, an organic insulating film including the same, an organic thin film transistor including the organic insulating film, an electronic device including the organic thin film transistor and methods of fabricating the same. In the composition, an organic polymer material having a carboxyl group and an organic silane material having an electron-donating group are included to thus realize a structure which may further stabilize an unreacted crosslinking material. Thereby, a hysteresis phenomenon may be decreased and transparency may be increased, thus making it possible to assure stability upon exposure to air. Accordingly, the lifetime of the organic thin film transistor may be lengthened.
摘要翻译：公开了组合物，包含该有机绝缘膜的有机绝缘膜，包括有机绝缘膜的有机薄膜晶体管，包括有机薄膜晶体管的电子器件及其制造方法。在该组合物中，包括具有羧基的有机聚合物材料和具有给电子基团的有机硅烷材料，从而实现可以进一步稳定未反应的交联材料的结构。因此，滞后现象可能会降低，并且可能增加透明度，从而可以确保暴露在空气中时的稳定性。因此，有机薄膜晶体管的寿命可以延长。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式