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11. 发明申请

US20160020228A1 CMOS TRANSISTOR AND METHOD FOR FABRICATING THE SAME, DISPLAY PANEL AND DISPLAY DEVICE 审中-公开
标题翻译： CMOS晶体管及其制造方法，显示面板和显示装置
公开(公告)号：US20160020228A1
公开(公告)日：2016-01-21
申请号：US14422365
申请日：2014-03-25
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Chunsheng JIANG
IPC分类号： H01L27/12 , H01L29/22 , H01L27/092 , H01L29/36
CPC分类号： H01L27/1225 , H01L27/092 , H01L27/1259 , H01L27/127 , H01L27/1288 , H01L29/22 , H01L29/36
摘要： The present invention provides a CMOS transistor and a method for fabricating the same, a display panel and a display device. The CMOS transistor comprises a first region and a second region provided on a base substrate, the first region comprises a first gate electrode, a first active layer, a first source electrode and a first drain electrode, and the second region comprises a second gate electrode, a second active layer, a second source electrode and a second drain electrode, first dopant ions are formed in the first active layer, second dopant ions are formed in the second active layer, a concentration of the first dopant ions is smaller than that of the second dopant ions, the first active layer is an n-type active layer, and the second active layer is a p-type active layer. The technical solution of the present invention can reduce power consumption of display panel.
摘要翻译：本发明提供一种CMOS晶体管及其制造方法，显示面板和显示装置。 CMOS晶体管包括设置在基底基板上的第一区域和第二区域，第一区域包括第一栅电极，第一有源层，第一源电极和第一漏电极，第二区包括第二栅电极第二有源层，第二源极和第二漏电极，在第一有源层中形成第一掺杂离子，在第二有源层中形成第二掺杂离子，第一掺杂离子的浓度小于第二掺杂离子，第一有源层是n型有源层，第二有源层是p型有源层。本发明的技术方案可以降低显示面板的功耗。

12. 发明申请

US20150240345A1 APPARATUS AND METHOD FOR COATING ORGANIC FILM 审中-公开
公开(公告)号：US20150240345A1
公开(公告)日：2015-08-27
申请号：US14708786
申请日：2015-05-11
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Wulin SHEN , Chunsheng JIANG , Qing DAI , Haijing CHEN , Guangcai YUAN , Jingang FANG
IPC分类号： C23C14/30 , C23C14/04
CPC分类号： H01L51/0013 , B05B5/001 , B05B5/0255 , B05B5/03 , B05B5/0533 , B05B5/057 , B05D1/007 , B05D1/60 , C23C14/042 , C23C14/12 , C23C14/24 , C23C14/243 , C23C14/30 , C23C14/32 , H01L51/001 , H01L51/0011 , H01L51/56
摘要： An apparatus and method for coating an organic film are disclosed. The apparatus comprises an evaporation device, an electron emission device and a spray device; wherein the evaporation device comprises an evaporation container, the evaporation container is a linear evaporation container, in which a uniform organic gas is generated; the electron emission device is horizontally arranged over the evaporation container such that the organic gas evaporated in the evaporation container is uniformly charged and becomes charged organic gas; the spray device is provided with an electric field, under which the charged organic gas is moved toward a substrate so as to deposit the organic film on the substrate.

13. 发明申请

US20190123070A1 CMOS Transistor and Method for Fabricating the Same, Display Panel and Display Device 审中-公开
公开(公告)号：US20190123070A1
公开(公告)日：2019-04-25
申请号：US16227012
申请日：2018-12-20
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Chunsheng JIANG
IPC分类号： H01L27/12 , H01L29/36 , H01L29/22 , H01L27/092
摘要： The present disclosure provides a CMOS transistor and a method for fabricating the same, a display panel and a display device. The method includes: forming a first gate electrode, a second gate electrode, a first active layer, a second active layer, a first source electrode, a second source electrode, a first drain electrode and a second drain electrode on a base substrate; and injecting first dopant ions into the first active layer and injecting second dopant ions into the second active layer by a doping process, wherein a concentration of the first dopant ions is smaller than that of the second dopant ions, the first active layer is an n-type active layer, and the second active layer is a p-type active layer.

14. 发明申请

US20160109739A1 MANUFACTURING METHOD OF TFT ARRAY SUBSTRATE, TFT ARRAY SUBSTRATE AND DISPLAY DEVICE 有权
标题翻译： TFT阵列基板，TFT阵列基板和显示装置的制造方法
公开(公告)号：US20160109739A1
公开(公告)日：2016-04-21
申请号：US14366525
申请日：2013-04-18
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Shi SHU , Guanbao HUI , Teng YE , Chunsheng JIANG , Cuili GAI
IPC分类号： G02F1/1368 , H01L27/12 , G02F1/1362
CPC分类号： G02F1/1368 , G02F1/1362 , G02F1/136209 , G02F1/136227 , G02F2001/136222 , H01L27/124 , H01L27/1259 , H01L27/1288 , H01L29/78633
摘要： Embodiments of the disclosure provide a manufacturing method of a TFT array substrate, a TFT array substrate and a display device. The method comprises steps of: S1. forming a thin film transistor on a base substrate; S2. forming a passivation layer thin film on the base substrate after the step S1; S3. forming a passivation layer via hole and a light-shielding pattern on the base substrate after the step S2; and S4. forming a color filter layer and a pixel electrode on the base substrate after the step S3. The pixel electrode is electrically connected to a drain electrode of the thin film transistor through the passivation layer via hole, and the color filter layer is in correspondence with a position of the pixel electrode.
摘要翻译：本发明的实施例提供了TFT阵列基板，TFT阵列基板和显示装置的制造方法。该方法包括以下步骤：S1。在基底基板上形成薄膜晶体管; S2。在步骤S1之后在基底基板上形成钝化层薄膜; S3。在步骤S2之后在基底基板上形成钝化层通孔和遮光图案; 和S4。在步骤S3之后在基底基板上形成滤色器层和像素电极。像素电极通过钝化层通孔电连接到薄膜晶体管的漏电极，滤色器层与像素电极的位置对应。

15. 发明申请

US20160086981A1 FABRICATION METHODS OF TRANSPARENT CONDUCTIVE ELECTRODE AND ARRAY SUBSTRATE 有权
标题翻译：透明导电电极和阵列基板的制造方法
公开(公告)号：US20160086981A1
公开(公告)日：2016-03-24
申请号：US14436576
申请日：2014-09-15
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Meili WANG , Fengjuan LIU , Chunsheng JIANG
IPC分类号： H01L27/12
CPC分类号： H01L27/1244 , G02F1/13439 , G02F2001/134372 , H01L27/1259
摘要： Fabrication methods of a transparent conductive electrode (301) and an array substrate are provided. The fabrication method of the transparent conductive electrode (301) comprises: forming a sacrificial layer pattern (201) on a substrate (10) having a first region (A1) and a second region (A2) adjacent to each other, wherein the sacrificial layer pattern (201) is located in the second region (A2), and has an upper sharp corner profile formed on a side adjacent to the first region (A1); forming a transparent conductive thin-film (30) in the first region (A1) and the second region (A2) of the substrate (10) with the sacrificial layer pattern (201) formed thereon, wherein a thickness ratio of the transparent conductive thin-film (30) to the sacrificial layer pattern (201) is less than or equal to 1:1.5, and the transparent conductive thin-film (30) is disconnected at the upper sharp corner profile of the sacrificial layer pattern (201), such that at least a part of a side surface of the sacrificial layer pattern (201) facing the first region (A1) is exposed; and removing the sacrificial layer pattern (201) so as to reserve the transparent conductive thin-film (30) in the first region as the transparent conductive electrode (301).
摘要翻译：提供透明导电电极（301）和阵列基板的制造方法。透明导电电极（301）的制造方法包括：在具有彼此相邻的第一区域（A1）和第二区域（A2）的基板（10）上形成牺牲层图案（201），其中牺牲层图案（201）位于第二区域（A2）中，并且具有形成在与第一区域（A1）相邻的一侧上的上部锐角分布; 在其上形成有牺牲层图案（201）的第一区域（A1）和第二区域（A2）中形成透明导电薄膜（30），其中透明导电薄膜牺牲层图案（201）的薄膜（30）小于或等于1:1.5，透明导电薄膜（30）在牺牲层图案（201）的上部锐角分布处断开，使得牺牲层图案（201）的面向第一区域（A1）的侧表面的至少一部分被露出; 以及去除所述牺牲层图案（201）以便在所述第一区域中保留所述透明导电薄膜（30）作为所述透明导电电极（301）。

16. 发明申请

US20160035756A1 THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR, ARRAY SUBSTRATE, METHOD FOR MANUFACTURING ARRAY SUBSTRATE, AND DISPLAY DEVICE 有权
标题翻译：薄膜晶体管，制造薄膜晶体管的方法，阵列基板，制造阵列基板的方法和显示装置
公开(公告)号：US20160035756A1
公开(公告)日：2016-02-04
申请号：US14424721
申请日：2014-04-16
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Chunsheng JIANG , Wei LIU
IPC分类号： H01L27/12
CPC分类号： H01L27/1225 , H01L27/127 , H01L29/66969 , H01L29/7869
摘要： The present disclosure relates to the field of display technology, and provides a TFT, a method for manufacturing the TFT, an array substrate, a method for manufacturing the array substrate, and a display device. The method for manufacturing the TFT includes a step of forming a pattern including a source electrode, a drain electrode and an active layer by a single patterning process, wherein the source electrode, the drain electrode and the active layer are arranged at an identical layer, and the active layer is arranged between the source electrode and the drain electrode.
摘要翻译：本公开涉及显示技术领域，并且提供TFT，TFT的制造方法，阵列基板，阵列基板的制造方法以及显示装置。制造TFT的方法包括通过单一图案化工艺形成包括源电极，漏电极和有源层的图案的步骤，其中源电极，漏电极和有源层布置在相同的层上，并且有源层布置在源电极和漏电极之间。

17. 发明申请

US20160013317A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE 有权
标题翻译：薄膜晶体管及其制造方法，阵列基板和显示器件
公开(公告)号：US20160013317A1
公开(公告)日：2016-01-14
申请号：US14435688
申请日：2014-06-27
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Ce ZHAO , Chunsheng JIANG , Guangcai YUAN
IPC分类号： H01L29/786 , H01L21/02 , H01L21/426 , H01L29/24 , H01L29/66
CPC分类号： H01L27/1225 , H01L21/02565 , H01L21/426 , H01L29/24 , H01L29/66969 , H01L29/78606 , H01L29/78618 , H01L29/7869
摘要： A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The method includes forming a gate electrode, a gate insulating layer, a metal oxide semiconductor (MOS) active layer, a source electrode and a drain electrode on a substrate. The MOS active layer includes forming a pattern layer of indium oxide series binary metal oxide including a first, second, and third pattern directly contacting with the source electrode and the drain electrode. An insulating layer formed over the source electrode and the drain electrode acts as a protection layer, the pattern layer of indium oxide series binary metal oxide is implanted with metal doping ions by using an ion implanting process, and is annealed, so that the indium oxide series binary metal oxide of the third pattern is converted into the indium oxide series multiple metal oxide to form the MOS active layer.
摘要翻译：提供薄膜晶体管及其制造方法，阵列基板和显示装置。该方法包括在基板上形成栅电极，栅极绝缘层，金属氧化物半导体（MOS）有源层，源电极和漏电极。 MOS活性层包括形成包含与源电极和漏电极直接接触的第一，第二和第三图案的氧化铟系二元金属氧化物的图案层。在源电极和漏电极上形成的绝缘层用作保护层，氧化铟系二元金属氧化物的图案层通过离子注入工艺注入金属掺杂离子，并进行退火，使得氧化铟将第三图案的串联二元金属氧化物转换为氧化铟系多重金属氧化物以形成MOS活性层。

18. 发明申请

US20150349141A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE, DISPLAY DEVICE 有权
标题翻译：薄膜晶体管及其制造方法，阵列基板，显示器件
公开(公告)号：US20150349141A1
公开(公告)日：2015-12-03
申请号：US14421967
申请日：2014-04-10
申请人： BOE Technology Group Co., Ltd.
发明人： Chunsheng JIANG
IPC分类号： H01L29/786 , H01L21/477 , H01L21/425 , H01L21/426 , H01L27/12 , H01L29/66
CPC分类号： H01L29/78696 , H01L21/425 , H01L21/426 , H01L21/477 , H01L27/1225 , H01L29/66742 , H01L29/66969 , H01L29/78618 , H01L29/7869
摘要： There are provided a thin film transistor and a manufacturing method thereof, an array substrate, a display device. The manufacturing method includes forming a gate electrode, a gate insulating layer, a metal oxide semiconductor active layer, a source electrode and a drain electrode on a substrate. The forming the metal oxide semiconductor active layer includes forming a zinc oxide-based binary metal oxide pattern layer on a substrate. The pattern layer includes a first pattern, a second pattern and a third pattern. Metal doping ions are implanted into the zinc oxide-based binary metal oxide pattern layer by using an ion implantation technology, so that a binary metal oxide of the third pattern is transformed into a multi-element metal oxide semiconductor, and the metal oxide semiconductor active layer is formed.
摘要翻译：提供了薄膜晶体管及其制造方法，阵列基板，显示装置。制造方法包括在基板上形成栅电极，栅绝缘层，金属氧化物半导体有源层，源电极和漏电极。形成金属氧化物半导体活性层包括在基板上形成基于氧化锌的二元金属氧化物图案层。图案层包括第一图案，第二图案和第三图案。通过使用离子注入技术将金属掺杂离子注入到基于氧化锌的二元金属氧化物图案层中，使得第三图案的二元金属氧化物转变为多元素金属氧化物半导体，并且金属氧化物半导体活性形成层。

19. 发明申请

US20150349140A1 THIN FILM TRANSISTOR, METHOD FOR FABRICATING THE SAME AND DISPLAY APPARATUS 有权
标题翻译：薄膜晶体管，其制造方法和显示装置
公开(公告)号：US20150349140A1
公开(公告)日：2015-12-03
申请号：US14409333
申请日：2014-06-20
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Meili WANG , Chunsheng JIANG , Dongfang WANG , Fengjuan LIU
IPC分类号： H01L29/786 , H01L27/32 , H01L21/266 , H01L21/02 , H01L29/66 , H01L21/265
CPC分类号： H01L29/78696 , H01L21/02164 , H01L21/0217 , H01L21/265 , H01L21/266 , H01L27/3244 , H01L29/66742 , H01L29/66969 , H01L29/78609 , H01L29/7869
摘要： Embodiments of the present invention provide a thin film transistor, method for fabricating the thin film transistor and display apparatus. The method includes steps of: forming an active layer pattern which has a mobility greater than a predetermined threshold from an active layer material; and performing ion implantation on the active layer pattern. The energy of a compound bond formed from the implanted ions is greater than that of a compound bond formed from ions in the active layer material, thereby reducing the chance of vacancy formation and reducing the carrier concentration. Therefore, the mobility of the active layer surface is reduced, the leakage current is reduced, the threshold voltage is adjusted to shift toward positive direction and performance of the thin film transistor is improved.
摘要翻译：本发明的实施例提供一种薄膜晶体管，用于制造薄膜晶体管和显示装置的方法。该方法包括以下步骤：从有源层材料形成具有大于预定阈值的迁移率的有源层图案; 并对活性层图案进行离子注入。由注入的离子形成的化合物键的能量大于由活性层材料中的离子形成的化合物键的能量，从而减少空位形成和降低载流子浓度的机会。因此，有源层表面的迁移率降低，泄漏电流降低，阈值电压被调整为向正方向移动，提高了薄膜晶体管的性能。

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