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11. 发明申请

US20070099321A1 Method for fabricating semiconductor laser device 审中-公开
标题翻译：制造半导体激光器件的方法
公开(公告)号：US20070099321A1
公开(公告)日：2007-05-03
申请号：US10581202
申请日：2004-09-27
申请人： Mamoru Miyachi , Yoshinori Kimura , Kiyofumi Chikuma
发明人： Mamoru Miyachi , Yoshinori Kimura , Kiyofumi Chikuma
IPC分类号： H01L21/00 , H01L21/28 , H01L21/3205
CPC分类号： H01S5/4043 , H01S5/0217 , H01S5/0425 , H01S5/22 , H01S5/4087
摘要： A first intermediate body is fabricated on a semiconductor substrate. The first intermediate body includes a first lasing portion of a multi-layer stack and a metal adherent layer. A second intermediate body is fabricated on a support substrate. The second intermediate body includes a second lasing portion formed of a multi-layer stack to be less in size than the first lasing portion, and a groove formed adjacent thereto to form a metal adherent layer. Then, with waveguide paths brought into close proximity, the adherent layers of the first and second intermediate bodies are fused to generate an integrated adherent layer, thereby securely adhering the first and second lasing portions to each other. Thereafter, the support substrate is stripped off from the second lasing portion, thereby allowing the adherent layer to be partially exposed. A semiconductor laser device is thus fabricated which has the exposed adherent layer as a common electrode.
摘要翻译：在半导体衬底上制造第一中间体。第一中间体包括多层堆叠的第一激光部分和金属粘附层。在支撑基板上制造第二中间体。第二中间体包括由多层叠层形成的尺寸小于第一激光部分的第二激光部分和与其相邻形成的沟槽以形成金属粘附层。然后，随着波导路径相互靠近，第一和第二中间体的粘附层被熔合以产生一体化的粘合层，从而将第一和第二激光部分牢固地粘附到彼此。此后，从第二激光部分剥离支撑基板，从而允许粘附层部分露出。因此制造了具有暴露的粘附层作为公共电极的半导体激光器件。

12. 发明申请

US20050169153A1 Two wavelength laser module and optical pickup device 审中-公开
标题翻译：两个波长激光模块和光学拾取装置
公开(公告)号：US20050169153A1
公开(公告)日：2005-08-04
申请号：US11035054
申请日：2005-01-14
申请人： Masakazu Ogasawara , Makoto Sato , Mamoru Miyachi , Yoshinori Kimura
发明人： Masakazu Ogasawara , Makoto Sato , Mamoru Miyachi , Yoshinori Kimura
IPC分类号： G11B7/00 , G11B7/12 , G11B7/123 , G11B7/125 , G11B7/1275 , G11B7/135 , G11B7/1353 , G11B7/1365 , H01S5/022 , H01S5/323 , H01S5/343 , H01S5/40
CPC分类号： G11B7/1275 , G11B7/123 , G11B7/1353 , G11B7/1365 , G11B2007/0006
摘要： A two wavelength laser module is made up of a semiconductor laser assembly that includes a first semiconductor laser for emitting a first light beam of a first polarization direction and a second semiconductor laser for emitting a second light beam of a second polarization direction. The second light beam is emitted approximately in the same direction as that of the first light beam and has a shorter wavelength than that of the first light beam. The first and second semiconductor lasers are disposed on a substrate. The module includes a polarization diffraction element for causing a divergence angle of the first light beam to differ from that of the second light beam.
摘要翻译：双波长激光器模块由包括用于发射第一偏振方向的第一光束的第一半导体激光器和用于发射第二偏振方向的第二光束的第二半导体激光器的半导体激光器组件构成。第二光束大致以与第一光束相同的方向发射，并且具有比第一光束的波长短的波长。第一和第二半导体激光器设置在基板上。该模块包括用于使第一光束的发散角与第二光束的发散角不同的偏振衍射元件。

13. 发明授权

US06235548B1 Method of fabricating nitride semiconductor laser 有权
标题翻译：制造氮化物半导体激光器的方法
公开(公告)号：US06235548B1
公开(公告)日：2001-05-22
申请号：US09461035
申请日：1999-12-15
申请人： Hiroyuki Ota , Yoshinori Kimura , Mamoru Miyachi
发明人： Hiroyuki Ota , Yoshinori Kimura , Mamoru Miyachi
IPC分类号： H01L2100
CPC分类号： H01S5/32341 , H01S5/0213 , H01S5/3063
摘要： The disclosure is a method for fabricating a nitride semiconductor laser device of group-III nitride semiconductor having a substrate. The method includes a step of forming a crystal layer made of a group-III nitride semiconductor (AlxGa1-x)1-yInyN (0≦x≦1, 0≦y≦1) having an added group II element over the substrate; a step of heating the crystal layer up to a predetermined temperature in a thermal treatment atmosphere and maintaining the predetermined temperature for a first time period; and a step of introducing a hydrocarbon gas into the thermal treatment atmosphere for at least a partial time period within the first time period. The method further includes a step of irradiating an electromagnetic wave or photons to the crystal layer in the at least a partial time period, wherein the electromagnetic wave or photons have an energy greater than an energy forbidden band width of the group III nitride semiconductor in the crystal layer.
摘要翻译：本公开是制造具有基板的III族氮化物半导体的氮化物半导体激光器件的方法。该方法包括由具有添加的II族元素的III族氮化物半导体（Al x Ga 1-x）1-y In y N（0 <= x <= 1,0 <= y <= 1）形成的晶体层的步骤基材; 在热处理气氛中将晶体层加热到预定温度并保持第一时间段的预定温度的步骤; 以及在第一时间段内将烃气体引入热处理气氛中至少部分时间段的步骤。该方法还包括在至少部分时间段内将电磁波或光子照射到晶体层的步骤，其中电磁波或光子的能量大于III族氮化物半导体的能量禁带宽度晶体层。

14. 发明授权

US06207469B1 Method for manufacturing a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US06207469B1
公开(公告)日：2001-03-27
申请号：US09177805
申请日：1998-10-23
申请人： Hiroyuki Ota , Yoshinori Kimura , Mamoru Miyachi
发明人： Hiroyuki Ota , Yoshinori Kimura , Mamoru Miyachi
IPC分类号： H01L2100
CPC分类号： H01L33/007 , H01L21/268 , H01L21/3245
摘要： A GaN type semiconductor layer in which a group 2 impurity element is added is formed. The GaN type semiconductor layer is heated at a predetermined temperature, while irradiating the semiconductor layer with an electromagnetic wave having an energy larger than the band gap energy of the GaN type semiconductor layer.
摘要翻译：形成添加了第2族杂质元素的GaN型半导体层。在预定温度下加热GaN型半导体层，同时用具有比GaN型半导体层的带隙能量大的能量的电磁波照射半导体层。

15. 发明授权

US07399649B2 Semiconductor light-emitting device and fabrication method thereof 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07399649B2
公开(公告)日：2008-07-15
申请号：US10577722
申请日：2004-09-27
申请人： Mamoru Miyachi , Hiroyuki Ota , Yoshinori Kimura , Kiyofumi Chikuma
发明人： Mamoru Miyachi , Hiroyuki Ota , Yoshinori Kimura , Kiyofumi Chikuma
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/20
摘要： An underlying layer ALY of GaN is formed on a sapphire substrate SSB; a transfer layer TLY of GaN with a bump and dip shaped surface is formed on the underlying layer ALY; a light absorption layer BLY is formed on the bump and dip shaped surface of the transfer layer TLY; and a grown layer 4 of a planarization layer CLY and a structured light-emitting layer DLY having at least an active layer are formed on the light absorption layer BLY. A support substrate 2 is provided on the grown layer 4. The backside of the sapphire substrate SSB is irradiated with light of the second harmonic of YAG laser (wavelength 532 nm) to decompose the light absorption layer BLY and delaminate the sapphire substrate SSB, thereby allowing the planarization layer CLY of a bump and dip shaped surface to be exposed as a light extraction face.
摘要翻译：在蓝宝石衬底SSB上形成GaN的下层ALY; 在底层ALY上形成具有凸起和浸渍形状表面的GaN的转移层TLY; 在转印层TLY的凸起和浸渍表面上形成光吸收层BLY; 并且在光吸收层BLY上形成平坦化层CLY的生长层4和至少具有有源层的结构化的发光层DLY。在生长层4上设置有支撑基板2。蓝宝石衬底SSB的背面用YAG激光的二次谐波（波长532nm）的光照射，以分解光吸收层BLY并使蓝宝石衬底SSB分层，从而使凸起和浸渍面的平坦化层CLY 被曝光作为光提取面。

16. 发明申请

US20090311815A1 MULTI-WAVELENGTH INTEGRATED SEMICONDUCTOR LASER DEVICE AND METHOD FOR MANUFACTURING SAME 失效
标题翻译：多波长集成半导体激光器件及其制造方法
公开(公告)号：US20090311815A1
公开(公告)日：2009-12-17
申请号：US12158648
申请日：2006-12-14
申请人： Mamoru Miyachi , Yoshinori Kimura
发明人： Mamoru Miyachi , Yoshinori Kimura
IPC分类号： H01L21/20
CPC分类号： H01S5/4043 , H01S5/0216 , H01S5/0224 , H01S5/02272 , H01S5/024 , H01S5/22 , H01S5/405 , H01S5/4087 , Y10S438/977
摘要： An object is to provide a multi-wavelength integrated semiconductor laser device which can reduce variations in emission point distance, can be formed by simplified manufacturing processes, and can provide improve electric characteristics.A first semiconductor laser element 100 having an active layer AL1 for emitting a laser beam of a first wavelength from its light-emitting point X1 and a second semiconductor laser element 200 having an active layer AL2 for emitting a laser beam of a second wavelength from its light-emitting point X2 are bonded to each other via an adhesive layer MC made of metal. At least either one of the semiconductor laser elements has a ridge waveguide made of an n-type semiconductor. The semiconductor laser elements 100 and 200 are bonded via the metal adhesive layer MC at the sides of their respective p-type semiconductors. A submount SUB is bonded to the first semiconductor laser element 100 via metal at a side where its ridge waveguide is formed.
摘要翻译：本发明的目的是提供一种可以减少发射点距离的变化的多波长集成半导体激光器件，可以通过简化的制造工艺形成，并且可以提供改善的电气特性。具有从其发光点X1发射第一波长的激光束的有源层AL1的第一半导体激光元件100和具有从其发光点X1发射第二波长的激光束的有源层AL2的第二半导体激光元件200 发光点X2通过由金属制成的粘合剂层MC彼此结合。半导体激光元件中的至少一个具有由n型半导体构成的脊状波导。半导体激光元件100和200通过金属粘合剂层MC在它们各自的p型半导体的侧面接合。底座SUB通过金属在其脊形波导形成的一侧与第一半导体激光元件100接合。

17. 发明授权

US07477669B2 Semiconductor laser device and method of manufacturing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07477669B2
公开(公告)日：2009-01-13
申请号：US10576925
申请日：2004-09-27
申请人： Mamoru Miyachi , Yoshinori Kimura , Kiyofumi Chikuma
发明人： Mamoru Miyachi , Yoshinori Kimura , Kiyofumi Chikuma
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0201 , H01S5/0213 , H01S5/0217 , H01S5/0425 , H01S5/2004 , H01S5/2201 , H01S5/2214 , H01S5/2231 , H01S5/34326 , H01S5/34333 , H01S5/4043 , H01S5/4087
摘要： This invention provides a semiconductor laser device and method of manufacture with a small interval between light emitting points of laser lights. A first light emitting element having a semiconductor substrate and a laser oscillation section, and a second light emitting element having a laser oscillation section, are brought together with a ridged waveguide of the laser oscillation section facing the ridged waveguide of the laser oscillation section, and then bonded together by virtue of SOGs having a small thickness. A conductive wiring layer electrically connected with an ohmic electrode layer on the ridged waveguide, and a wiring layer electrically connected with an ohmic electrode layer on the ridged waveguide, are arranged to extend until the insulating layer on the semiconductor substrate. Further, the ohmic electrodes and are formed on the bottom surface of the semiconductor substrate and the top surface of the laser oscillation section, respectively.
摘要翻译：本发明提供一种在激光的发光点之间以小间隔制造的半导体激光器件及其制造方法。具有半导体衬底和激光振荡部分的第一发光元件和具有激光振荡部分的第二发光元件与激光振荡部分的脊形波导一起与激光振荡部分的脊状波导相对，并且然后利用厚度小的SOG将其粘结在一起。与脊状波导上的欧姆电极层电连接的导电布线层和与脊状波导上的欧姆电极层电连接的布线层被布置成延伸到半导体基板上的绝缘层。此外，欧姆电极分别形成在半导体衬底的底表面和激光振荡部分的顶表面上。

18. 发明申请

US20070091958A1 Semiconductor laser device and method of manufacturing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20070091958A1
公开(公告)日：2007-04-26
申请号：US10576925
申请日：2004-09-27
申请人： Mamoru Miyachi , Yoshinori Kimura , Kiyofumi Chikuma
发明人： Mamoru Miyachi , Yoshinori Kimura , Kiyofumi Chikuma
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0201 , H01S5/0213 , H01S5/0217 , H01S5/0425 , H01S5/2004 , H01S5/2201 , H01S5/2214 , H01S5/2231 , H01S5/34326 , H01S5/34333 , H01S5/4043 , H01S5/4087
摘要： This invention is to provide a semiconductor laser device with a small interval between light emitting points of laser lights and a method of manufacturing the same. A first light emitting element 1a having a semiconductor substrate 12a and a laser oscillation section 10a, and a second light emitting element 2a having a laser oscillation section 4a, are brought together with a ridged waveguide 8 of the laser oscillation section 10a facing the ridged waveguide 5 of the laser oscillation section 4a, and then bonded together by virtue of SOGs 3a having a small thickness. A conductive wiring layer Qa1 electrically connected with an ohmic electrode layer 9a on the ridged waveguide 8a, and a wiring layer Qa2 electrically connected with an ohmic electrode layer 6a on the ridged waveguide 5a, are arranged to extend until the insulating layer 11a on the semiconductor substrate 12a. Further, the ohmic electrodes Pa1 and Pa2 are formed on the bottom surface of the semiconductor substrate 12a and the top surface of the laser oscillation section 4a, respectively. In this way, when a drive current is supplied between the ohmic electrode Pa1 and the wiring layer Qa1, the laser oscillation section 10a will emit a light. On the other hand, when a drive current is supplied between the ohmic electrode Pa2 and the wiring layer Qa2, the laser oscillation section 4a will emit a light. In this manner, since the laser oscillation sections 4a and 10a are bonded together by virtue of SOGs 3a having a small thickness, it is allowed to form a semiconductor laser device with a small interval between light emitting points.
摘要翻译：本发明提供一种在激光的发光点之间具有小间隔的半导体激光器件及其制造方法。具有半导体衬底12a和激光振荡部分10a的第一发光元件1a和具有激光振荡部分4a的第二发光元件2a与激光振荡部分的脊状波导8一起 10a面对激光振荡部分4a的脊状波导5，然后借助于具有小厚度的SOG 3a而结合在一起。与脊状波导管8a上的欧姆电极层9a电连接的导电布线层Qa 1和与脊状波导5a上的欧姆电极层6a电连接的布线层Qa 2被布置成延伸直到半导体衬底12a上的绝缘层11a。此外，欧姆电极Pa 1和Pa 2分别形成在半导体衬底12a的底表面和激光振荡部分4a的顶表面上。以这种方式，当在欧姆电极Pa 1和布线层Qa 1之间提供驱动电流时，激光振荡部分10a将发光。另一方面，当在欧姆电极Pa 2和布线层Qa 2之间提供驱动电流时，激光振荡部分4a将发光。以这种方式，由于激光振荡部分4a和10a由于具有小厚度的SOG 3a而结合在一起，所以允许在发光点之间形成间隔小的半导体激光器件。

19. 发明申请

US20070059852A1 Semiconductor light-emitting device and fabrication method thereof 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20070059852A1
公开(公告)日：2007-03-15
申请号：US10577722
申请日：2004-09-27
申请人： Mamoru Miyachi , Hiroyuki Ota , Yoshinori Kimura , Kirofumi Chikuma
发明人： Mamoru Miyachi , Hiroyuki Ota , Yoshinori Kimura , Kirofumi Chikuma
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/20
摘要： An underlying layer ALY of GaN is formed on a sapphire substrate SSB; a transfer layer TLY of GaN with a bump and dip shaped surface is formed on the underlying layer ALY; a light absorption layer BLY is formed on the bump and dip shaped surface of the transfer layer TLY; and a grown layer 4 of a planarization layer CLY and a structured light-emitting layer DLY having at least an active layer are formed on the light absorption layer BLY. A support substrate 2 is provided on the grown layer 4. The backside of the sapphire substrate SSB is irradiated with light of the second harmonic of YAG laser (wavelength 532 nm) to decompose the light absorption layer BLY and delaminate the sapphire substrate SSB, thereby allowing the planarization layer CLY of a bump and dip shaped surface to be exposed as a light extraction face.
摘要翻译：在蓝宝石衬底SSB上形成GaN的下层ALY; 在底层ALY上形成具有凸起和浸渍形状表面的GaN的转移层TLY; 在转印层TLY的凸起和浸渍表面上形成光吸收层BLY; 并且在光吸收层BLY上形成平坦化层CLY的生长层4和至少具有有源层的结构化的发光层DLY。在生长层4上设置有支撑基板2。蓝宝石衬底SSB的背面用YAG激光的二次谐波（波长532nm）的光照射，以分解光吸收层BLY并使蓝宝石衬底SSB分层，从而使凸起和浸渍面的平坦化层CLY 被曝光作为光提取面。

20. 发明申请

US20050175053A1 Integrated semiconductor light-emitting device and method for manufacturing same 失效
标题翻译：集成半导体发光器件及其制造方法
公开(公告)号：US20050175053A1
公开(公告)日：2005-08-11
申请号：US11038576
申请日：2005-01-21
申请人： Yoshinori Kimura , Mamoru Miyachi , Kiyofumi Chikuma
发明人： Yoshinori Kimura , Mamoru Miyachi , Kiyofumi Chikuma
IPC分类号： G11B7/125 , H01S5/02 , H01S5/22 , H01S5/323 , H01S5/343 , H01S5/40 , H01S5/00
CPC分类号： H01S5/4031 , H01S5/0202 , H01S5/0217 , H01S5/0224 , H01S5/02272 , H01S5/32325 , H01S5/32341 , H01S5/405 , H01S5/4087
摘要： An integrated semiconductor light-emitting device suitable for being mounted on a pickup is provided. The integrated semiconductor light-emitting device has a first laser part stacked on a semiconductor substrate and a projection-shaped second laser part formed by stack in thin-film-layer form. The second laser part is fitted into a trench formed adjacent to the first laser part in the semiconductor substrate. At least the first and second laser parts and the trench are bonded together through a metal bonding layer. An emission spot of the first laser part and an emission spot of the second laser part are located away in approximately the same horizontal direction perpendicular to the direction of the stack of the first and second laser parts.
摘要翻译：提供一种适于安装在拾取器上的集成半导体发光器件。集成半导体发光器件具有堆叠在半导体衬底上的第一激光器部分和以薄膜层形式堆叠形成的突出形状的第二激光器部分。第二激光器部件装配到与半导体衬底中的第一激光器部分相邻形成的沟槽中。至少第一和第二激光部分和沟槽通过金属粘结层粘合在一起。第一激光部的发光点和第二激光部的发光点位于与第一激光部和第二激光部的堆叠的方向垂直的大致相同的水平方向上。

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