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11. 发明授权

US07978750B2 Microcontroller 有权
标题翻译：微控制器
公开(公告)号：US07978750B2
公开(公告)日：2011-07-12
申请号：US11168448
申请日：2005-06-29
申请人： Hideo Nunokawa , Miki Suzuki , Hiroyuki Abe , Shinichi Okamoto , Shunichi Ko , Hiroshi Haibara , Nobuhiko Akasaka
发明人： Hideo Nunokawa , Miki Suzuki , Hiroyuki Abe , Shinichi Okamoto , Shunichi Ko , Hiroshi Haibara , Nobuhiko Akasaka
IPC分类号： H04B1/00
CPC分类号： H04B15/04 , H04B1/202
摘要： A microcontroller is disposed on a receiving part of a wireless system in order to process a demodulation signal generated by a receiver circuit, and includes a memory and a CPU. The memory stores a control program of the microcontroller. The control program thereof includes a dual loop routine for an operation in reception standby mode. The dual loop routine has a first loop and a second loop included in the first loop. The CPU has an instruction set consisting of a plurality of instructions, and executes the instructions according to the program stored in the memory. The CPU executes an instruction irrelevant to an operation when the microcontroller is in reception mode during the second loop a number of times. The number of times is at least such that noise caused by the repetition of the second loop is lowered below a desired level.
摘要翻译：微控制器设置在无线系统的接收部分上，以便处理由接收机电路产生的解调信号，并且包括存储器和CPU。存储器存储微控制器的控制程序。其控制程序包括用于接收待机模式下的操作的双循环程序。双循环程序具有包含在第一循环中的第一循环和第二循环。 CPU具有由多个指令组成的指令集，并且根据存储在存储器中的程序执行指令。 CPU执行与微控制器在第二次循环期间处于接收模式时的操作无关的指令。次数至少使得由第二回路的重复引起的噪声降低到期望水平以下。

12. 发明申请

US20060223452A1 Microcontroller 有权
标题翻译：微控制器
公开(公告)号：US20060223452A1
公开(公告)日：2006-10-05
申请号：US11168448
申请日：2005-06-29
申请人： Hideo Nunokawa , Miki Suzuki , Hiroyuki Abe , Shinichi Okamoto , Shunichi Ko , Hiroshi Haibara , Nobuhiko Akasaka
发明人： Hideo Nunokawa , Miki Suzuki , Hiroyuki Abe , Shinichi Okamoto , Shunichi Ko , Hiroshi Haibara , Nobuhiko Akasaka
IPC分类号： H04B1/38
CPC分类号： H04B15/04 , H04B1/202
摘要： A microcontroller is disposed on a receiving part of a wireless system in order to process a demodulation signal generated by a receiver circuit, and includes a memory and a CPU. The memory stores a control program of the microcontroller. The control program thereof includes a dual loop routine for an operation in reception standby mode. The dual loop routine has a first loop and a second loop included in the first loop. The CPU has an instruction set consisting of a plurality of instructions, and executes the instructions according to the program stored in the memory. The CPU executes an instruction irrelevant to an operation when the microcontroller is in reception mode during the second loop a number of times. The number of times is at least such that noise caused by the repetition of the second loop is lowered below a desired level.
摘要翻译：微控制器设置在无线系统的接收部分上，以便处理由接收机电路产生的解调信号，并且包括存储器和CPU。存储器存储微控制器的控制程序。其控制程序包括用于接收待机模式下的操作的双循环程序。双循环程序具有包含在第一循环中的第一循环和第二循环。 CPU具有由多个指令组成的指令集，并且根据存储在存储器中的程序执行指令。 CPU执行与微控制器在第二次循环期间处于接收模式时的操作无关的指令。次数至少使得由第二回路的重复引起的噪声降低到期望水平以下。

13. 发明授权

US06063300A Method of manufacturing semiconductor device including light etching 失效
标题翻译：包括光蚀刻的半导体器件的制造方法
公开(公告)号：US06063300A
公开(公告)日：2000-05-16
申请号：US26695
申请日：1998-02-20
申请人： Miki Suzuki , Jun Kikuchi , Mitsuaki Nagasaka , Shuzo Fujimura
发明人： Miki Suzuki , Jun Kikuchi , Mitsuaki Nagasaka , Shuzo Fujimura
IPC分类号： H01L21/302 , B44C1/22 , C03C15/00 , G01K5/48 , H01L21/3065 , H01L21/316 , H01L21/768
CPC分类号： H01L21/31116 , H01J37/32192 , H01L21/02063 , H01L21/28525 , H01L21/76804 , H01L21/76814 , H01L21/76816 , H01L21/76828 , H01L21/76877
摘要： A method of manufacturing a semiconductor device, including the steps of: cooling a semiconductor wafer to a predetermined temperature, the semiconductor wafer being mounted on a stage provided with cooling means and having a thin oxide film on a surface thereof; supplying energy to gas containing hydrogen and water vapor to excite the gas into a plasma state; adding nitrogen fluoride downstream into a flow of the gas in the plasma state; and introducing a flow of the gas, including the nitrogen fluoride, to the semiconductor wafer to etch the thin oxide film while maintaining the semiconductor wafer at the predetermined temperature.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：将半导体晶片冷却至预定温度，将半导体晶片安装在设置有冷却装置的台上，并在其表面上具有薄氧化膜; 向含有氢和水蒸汽的气体供应能量以将气体激发成等离子体状态; 在等离子体状态的气体流中向下游加入氮氟化物; 并将包括氮氟化物在内的气体流引入半导体晶片，以在半导体晶片保持在预定温度的同时蚀刻薄氧化膜。

14. 发明授权

US08766361B2 Semiconductor device and electronic device 有权
标题翻译：半导体器件和电子器件
公开(公告)号：US08766361B2
公开(公告)日：2014-07-01
申请号：US13315322
申请日：2011-12-09
申请人： Junichi Koezuka , Satoshi Shinohara , Miki Suzuki , Hideto Ohnuma
发明人： Junichi Koezuka , Satoshi Shinohara , Miki Suzuki , Hideto Ohnuma
IPC分类号： H01L27/12
CPC分类号： H01L29/66772 , H01L27/1288 , H01L29/66492 , H01L29/78624
摘要： A semiconductor device is provided, which includes a single crystal semiconductor layer formed over an insulating surface and having a source region, a drain region, and a channel formation region, a gate insulating film covering the single crystal semiconductor layer and a gate electrode overlapping with the channel formation region with the gate insulating film interposed therebetween. In the semiconductor device, at least the drain region of the source and drain regions includes a first impurity region adjacent to the channel formation region and a second impurity region adjacent to the first impurity region. A maximum of an impurity concentration distribution in the first impurity region in a depth direction is closer to the insulating surface than a maximum of an impurity concentration distribution in the second impurity region in a depth direction.
摘要翻译：提供了一种半导体器件，其包括形成在绝缘表面上并具有源极区，漏极区和沟道形成区的单晶半导体层，覆盖单晶半导体层的栅极绝缘膜和与沟道形成区域之间插入栅极绝缘膜。在半导体器件中，源极和漏极区域的至少漏极区域包括与沟道形成区域相邻的第一杂质区域和与第一杂质区域相邻的第二杂质区域。与深度方向上的第二杂质区域的杂质浓度分布的最大值相比，深度方向上的第一杂质区域的杂质浓度分布的最大值比绝缘面更接近。

15. 发明申请

US20060012354A1 Step-down circuit 有权
标题翻译：降压电路
公开(公告)号：US20060012354A1
公开(公告)日：2006-01-19
申请号：US10985905
申请日：2004-11-12
申请人： Hideo Nunokawa , Tatsuo Kato , Miki Suzuki , Tomonari Morishita
发明人： Hideo Nunokawa , Tatsuo Kato , Miki Suzuki , Tomonari Morishita
IPC分类号： G05F1/56
CPC分类号： G05F1/575
摘要： Even when, for example, electric charge is injected into the output transistor due to external factor such as a noise from the outside, to prevent the step-down voltage from rising, the step-down circuit is comprised of an N channel type output transistor which controls the voltage at the control end, a booster, which is connected to the control end of the output transistor and raises the voltage at the control end and a discharge circuit, which discharges the electric charge at the control end of the output transistor so that the power supply voltage inputted from the input end is stepped down to a desired step-down voltage and outputted from the output end.
摘要翻译：即使例如，由于诸如来自外部的噪声等外部因素将电荷注入到输出晶体管中，为了防止降压电压上升，降压电路由N沟道型输出晶体管其控制控制端的电压，升压器，其连接到输出晶体管的控制端并提高控制端的电压，以及放电电路，其在输出晶体管的控制端放电电从输入端输入的电源电压被降低到期望的降压电压并从输出端输出。

16. 外观设计

USD468198S1 Front surface of package 失效
公开(公告)号：USD468198S1
公开(公告)日：2003-01-07
申请号：US29140707
申请日：2001-04-23
申请人： Manami Nakazawa , Miki Suzuki , Megumi Nakamura
设计人： Manami Nakazawa , Miki Suzuki , Megumi Nakamura

17. 发明授权

US06207151B1 Aqueous solution of t-PA 失效
标题翻译： t-PA的水溶液
公开(公告)号：US06207151B1
公开(公告)日：2001-03-27
申请号：US08259152
申请日：1994-06-13
申请人： Yukio Shimazaki , Nobuhiro Kawashima , Miki Suzuki , Yasuhito Tanaka , Ryo Tanaka , Kiyoshi Sakai , Hisahiro Ishiwari
发明人： Yukio Shimazaki , Nobuhiro Kawashima , Miki Suzuki , Yasuhito Tanaka , Ryo Tanaka , Kiyoshi Sakai , Hisahiro Ishiwari
IPC分类号： A61K3849
CPC分类号： A61K38/49 , A61K47/34 , A61K47/36 , A61K47/42
摘要： Aqueous protein-containing solutions, in which a protein is dissolved at a high concentration at a pH near the isoelectric point of the protein by adding an anionic polymer or a salt thereof to the solution. Pharmaceutical formulations using a physiologically active protein are prepared using this technique.
摘要翻译：含有蛋白质的溶液，其中蛋白质通过向溶液中加入阴离子聚合物或其盐，在接近蛋白质等电点的pH下以高浓度溶解。使用该技术制备使用生理活性蛋白质的药物制剂。

18. 发明授权

US08819662B2 Device and method for time notification for updating software 有权
标题翻译：用于更新软件的时间通知的设备和方法
公开(公告)号：US08819662B2
公开(公告)日：2014-08-26
申请号：US13493692
申请日：2012-06-11
申请人： Katsumi Aoyagi , Miki Suzuki , Yasuyuki Hirao , Hidefumi Kaneko , Takeshi Kanemoto , Tomohiro Ichikawa
发明人： Katsumi Aoyagi , Miki Suzuki , Yasuyuki Hirao , Hidefumi Kaneko , Takeshi Kanemoto , Tomohiro Ichikawa
IPC分类号： G06F9/44
CPC分类号： G06F8/65
摘要： A terminal device may include: a communication interface to receive, from a server via a network, a file for updating software in a memory device coupled with the terminal device, and a software update table that includes data regarding one or more performance values and one or more time values indicative of one or more lengths of time taken to update the software using the file; a processor to obtain data regarding a performance value of the memory device, select, from the software update table, one of the one or more performance values based on the performance value of the memory device, and obtain, from the software update table, a time value associated with the selected performance value; and an output device to provide an output corresponding to the obtained time value. Each performance value is associated with one of the one or more time values, respectively.
摘要翻译：终端设备可以包括：通信接口，用于经由网络从服务器接收用于更新与终端设备耦合的存储设备中的软件的文件，以及软件更新表，其包括关于一个或多个性能值的数据和一个或更多的时间值指示使用该文件更新软件所需的一个或多个时间长度; 获取关于存储器件的性能值的数据的处理器，从软件更新表中选择基于存储器件的性能值的一个或多个性能值之一，并从软件更新表中获得与所选性能值相关联的时间值; 以及输出装置，用于提供对应于所获得的时间值的输出。每个性能值分别与一个或多个时间值之一相关联。

19. 发明授权

US08222097B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08222097B2
公开(公告)日：2012-07-17
申请号：US12547098
申请日：2009-08-25
申请人： Kazuya Hanaoka , Miki Suzuki
发明人： Kazuya Hanaoka , Miki Suzuki
IPC分类号： H01L21/265 , H01L21/768
CPC分类号： H01L21/76823 , H01L21/76825 , H01L25/0657 , H01L27/124 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002 , H01L2924/00
摘要： It is an object to form a conductive region between a front surface and a rear surface of an insulating film without forming contact holes in the insulating film. A method for manufacturing a semiconductor device is provided, in which an insulating film is formed over a semiconductor element and a first electrode electrically connected to the semiconductor element which are over a substrate, a first region having many defects is formed at a first depth in the insulating film by adding first ions into the insulating film at a first accelerating voltage; a second region having many defects is formed at a second depth which is different from the first depth in the insulating film by adding second ions into the insulating film at a second accelerating voltage which is different from the first accelerating voltage, a conductive material containing a metal element is formed over the first and second regions having many defects; and a conductive region which electrically connects the first electrode and the conductive material containing the metal element is formed in the insulating film by diffusing the metal element from the upper region to the lower region of the first and second regions having many defects.
摘要翻译：本发明的目的是在绝缘膜的前表面和后表面之间形成导电区域，而不会在绝缘膜中形成接触孔。提供一种制造半导体器件的方法，其中在半导体元件上形成绝缘膜和与衬底上电连接到半导体元件的第一电极，在第一深度处形成具有许多缺陷的第一区域所述绝缘膜通过以第一加速电压将绝缘膜加入第一离子; 通过以与第一加速电压不同的第二加速电压向绝缘膜中添加第二离子，在与第一深度不同的第二深度处形成具有许多缺陷的第二区域，金属元件形成在具有许多缺陷的第一和第二区域上; 并且通过将金属元件从具有许多缺陷的第一和第二区域的上部区域扩散到下部区域，在绝缘膜中形成电连接第一电极和含有金属元件的导电材料的导电区域。

20. 发明申请

US20100055894A1 Method for Manufacturing Semiconductor Device 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20100055894A1
公开(公告)日：2010-03-04
申请号：US12547098
申请日：2009-08-25
申请人： Kazuya Hanaoka , Miki Suzuki
发明人： Kazuya Hanaoka , Miki Suzuki
IPC分类号： H01L21/768
CPC分类号： H01L21/76823 , H01L21/76825 , H01L25/0657 , H01L27/124 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002 , H01L2924/00
摘要： It is an object to form a conductive region between a front surface and a rear surface of an insulating film without forming contact holes in the insulating film. A method for manufacturing a semiconductor device is provided, in which an insulating film is formed over a semiconductor element and a first electrode electrically connected to the semiconductor element which are over a substrate, a first region having many defects is formed at a first depth in the insulating film by adding first ions into the insulating film at a first accelerating voltage; a second region having many defects is formed at a second depth which is different from the first depth in the insulating film by adding second ions into the insulating film at a second accelerating voltage which is different from the first accelerating voltage, a conductive material containing a metal element is formed over the first and second regions having many defects; and a conductive region which electrically connects the first electrode and the conductive material containing the metal element is formed in the insulating film by diffusing the metal element from the upper region to the lower region of the first and second regions having many defects.
摘要翻译：本发明的目的是在绝缘膜的前表面和后表面之间形成导电区域，而不会在绝缘膜中形成接触孔。提供一种制造半导体器件的方法，其中在半导体元件上形成绝缘膜和与衬底上电连接到半导体元件的第一电极，在第一深度处形成具有许多缺陷的第一区域所述绝缘膜通过以第一加速电压将绝缘膜加入第一离子; 通过以与第一加速电压不同的第二加速电压将绝缘膜中添加第二离子，在与第一深度不同的第二深度处形成具有多个缺陷的第二区域，金属元件形成在具有许多缺陷的第一和第二区域上; 并且通过将金属元件从具有许多缺陷的第一和第二区域的上部区域扩散到下部区域，在绝缘膜中形成电连接第一电极和含有金属元件的导电材料的导电区域。

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