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11. 发明申请

US20080299742A1 Method for manufacturing SOI wafer 有权
标题翻译：制造SOI晶圆的方法
公开(公告)号：US20080299742A1
公开(公告)日：2008-12-04
申请号：US12153519
申请日：2008-05-20
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/86
CPC分类号： H01L21/76254 , H01L21/3065 , H01L22/12 , H01L22/20 , H01L2924/014
摘要： There is disclosed a method for manufacturing an SOI wafer comprising: a step of implanting at least one of a hydrogen ion and a rare gas ion into a donor wafer to form an ion implanted layer; a step of bonding an ion implanted surface of the donor wafer to a handle wafer; a step of delaminating the donor wafer at the ion implanted layer to reduce a film thickness of the donor wafer, thereby providing an SOI layer; and a step of etching the SOI layer to reduce a thickness of the SOI layer, wherein the etching step includes: a stage of performing rough etching as wet etching; a stage of measuring a film thickness distribution of the SOI layer after the rough etching; and a stage of performing precise etching as dry etching based on the measured film thickness distribution of the SOI layer. There can be provided A method for manufacturing an SOI wafer having high film thickness uniformity of an SOI layer with excellent productivity.
摘要翻译：公开了一种用于制造SOI晶片的方法，包括：将氢离子和稀有气体离子中的至少一种注入施主晶片以形成离子注入层的步骤; 将施主晶片的离子注入表面接合到处理晶片的步骤; 在离子注入层分层施主晶片以降低施主晶片的膜厚，从而提供SOI层的步骤; 以及蚀刻所述SOI层以减小所述SOI层的厚度的步骤，其中所述蚀刻步骤包括：执行粗蚀刻的阶段，如湿蚀刻; 在粗蚀刻之后测量SOI层的膜厚分布的阶段; 以及基于所测量的SOI层的膜厚分布，进行干蚀刻的精确蚀刻的阶段。可以提供一种以优异的生产率制造具有SOI层的高膜厚均匀性的SOI晶片的方法。

12. 发明申请

US20080194078A1 Method for manufacturing semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US20080194078A1
公开(公告)日：2008-08-14
申请号：US12010711
申请日：2008-01-29
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/20
CPC分类号： H01L21/76254 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262
摘要： To obtain a semiconductor substrate having a high-quality Ge-based epitaxial film in a large area, a SiGe mixed crystal buffer layer and a Ge epitaxial film is grown on a main surface of a Si substrate 10. Although high-density defects are introduced in the Ge epitaxial film 11 from an interface between the Ge epitaxial film 11 and the Si substrate 10, the Ge epitaxial film is subjected to a heat treatment at a temperature of not less than 700° C. and not more than 900° C. to cause threading dislocations 12 to change into dislocation-loop defects 12′ near the interface between the Ge epitaxial film 11 and the Si substrate. A main surface of at least one of the Ge epitaxial film 11 with an ion implanted layer and a support substrate 20 is then subjected to a plasma treatment or ozone treatment for the purpose of surface cleaning, surface activation, and the like, after which the main surfaces of the Ge epitaxial film 11 and the support substrate 20 are appressed against and bonded to each other with their surfaces being determined as the joint surfaces. An external impact is then applied to the bonding interface, causing the Ge epitaxial film to be delaminated along a hydrogen ion implanted interface 13, thus obtaining a Ge thin film 14. A surface of the Ge thin film 14 is subsequently subjected to a final surface treatment (for example, CMP) to remove the damage caused by the hydrogen ion implantation, thus resulting in a GeOI substrate having the Ge thin film 14 on the surface thereof.
摘要翻译：为了获得大面积地具有高质量Ge基外延膜的半导体衬底，在Si衬底10的主表面上生长SiGe混晶缓冲层和Ge外延膜。虽然在Ge外延膜11和Si衬底10之间的界面上在Ge外延膜11中引入高密度缺陷，但Ge外延膜在不低于700℃的温度下进行热处理，不超过900℃导致穿透位错12变为位于Ge外延膜11和Si衬底之间的界面附近的位错环缺陷12'。为了表面清洁，表面活化等目的，对具有离子注入层的Ge外延膜11和支撑基板20中的至少一个的主表面进行等离子体处理或臭氧处理，之后， Ge外延膜11和支撑基板20的主表面以其表面被确定为接合表面而相互贴合并彼此结合。然后对接合界面施加外部冲击，使得Ge外延膜沿着氢离子注入界面13分层，从而获得Ge薄膜14。随后，对Ge薄膜14的表面进行最终表面处理（例如CMP），以消除由氢离子注入引起的损伤，从而得到其表面上具有Ge薄膜14的GeOI基板。

13. 发明申请

US20080119028A1 SOQ substrate and method of manufacturing SOQ substrate 有权
标题翻译： SOQ基板和制造SOQ基板的方法
公开(公告)号：US20080119028A1
公开(公告)日：2008-05-22
申请号：US11984184
申请日：2007-11-14
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/30
CPC分类号： H01L21/3247 , H01L21/76254 , H01L29/78603
摘要： To lower a process temperature for an SOQ substrate manufacturing process to reduce the degree of surface roughness of an SOQ film and provide a high-quality SOQ substrate.Hydrogen ions are implanted to a surface of a single crystal Si substrate 10 through an oxide film 11 to uniformly form an ion implanted layer 12 at a predetermined depth (average ion implantation depth L) from the surface of the single crystal Si substrate 10, and a bonding surface of the substrate undergoes a plasma treatment or an ozone treatment. An external shock is applied onto the single crystal Si substrate 10 and quartz substrate 20, which are bonded together, to mechanically delaminate a silicon film 13 from a single crystal silicon bulk 14. In this way, the SOQ film 13 is formed on the quartz substrate 20 through the oxide film 11. To further smooth the SOQ film surface, hydrogen heat treatment is performed at a temperature of 1000° C. or less below a quartz glass transition point. When measuring surface roughness of an SOQ film after performing hydrogen heat treatment on a sample having surface roughness of about 5 nm in terms of RMS average value immediately after delamination, a satisfactory measurement result of 0.3 nm or less in terms of RMS average value was obtained.
摘要翻译：为了降低SOQ基板制造工艺的工艺温度以降低SOQ膜的表面粗糙度并提供高质量的SOQ基板。通过氧化膜11将氢离子注入到单晶Si衬底10的表面，以从单晶硅衬底10的表面以预定深度（平均离子注入深度L）均匀地形成离子注入层12，以及基板的接合面进行等离子体处理或臭氧处理。对结合在一起的单晶Si衬底10和石英衬底20施加外部冲击，从而将硅膜13与单晶硅体14机械地分层。这样，SOQ膜13形成在石英基板20通过氧化膜11.为了进一步平滑SOQ膜表面，在石英玻璃化转变点以下1000℃以下的温度下进行氢热处理。在对分层后的RMS平均值的表面粗糙度约为5nm的样品进行氢热处理后，测定SOQ膜的表面粗糙度，得到满意的平均值为0.3nm以下的测定结果。

14. 发明申请

US20080099065A1 Method for producing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US20080099065A1
公开(公告)日：2008-05-01
申请号：US11907902
申请日：2007-10-18
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L31/04 , B29C65/00
CPC分类号： H01L31/1804 , H01L31/1896 , Y02B10/10 , Y02E10/547 , Y02P70/521
摘要： There is disclosed a method for producing a single crystal silicon solar cell comprising the steps of: implanting hydrogen ions or rare gas ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; forming a transparent electroconductive film on a surface of a transparent insulator substrate; conducting a surface activating treatment for the ion implanting surface of the single crystal silicon substrate and/or a surface of the transparent electroconductive film on the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the surface of the transparent electroconductive film on the transparent insulator substrate to each other; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate thereat to leave a single crystal silicon layer; and forming a p-n junction in the single crystal silicon layer. There can be provided a single crystal silicon solar cell where a light conversion layer is provided as a thin-film for effective utilization of silicon as a starting material of the silicon solar cell, which single crystal silicon solar cell is excellent in conversion characteristics and is less in degradation due to light irradiation, and which single crystal silicon solar cell is provided as a see-through type solar cell that is usable as a natural lighting window material of a house or the like.
摘要翻译：公开了一种用于制造单晶硅太阳能电池的方法，包括以下步骤：通过其离子注入表面将氢离子或稀有气体离子注入到单晶硅衬底中，以在单晶硅衬底中形成离子注入层; 在透明绝缘体基板的表面上形成透明导电膜; 对透明绝缘体基板上的单晶硅衬底的离子注入表面和/或透明导电膜的表面进行表面激活处理; 将透明绝缘体基板上的单晶硅衬底的离子注入表面和透明导电膜的表面彼此接合; 对离子注入层施加冲击以在其上机械分层单晶硅衬底以留下单晶硅层; 并在单晶硅层中形成p-n结。可以提供一种单晶硅太阳能电池，其中提供光转换层作为有效利用硅作为硅太阳能电池的起始材料的薄膜，该单晶硅太阳能电池的转换特性优异，并且是由于光照射而导致的劣化较少，并且提供单晶硅太阳能电池作为可用作房屋等的自然采光窗材料的透明型太阳能电池。

15. 发明授权

US08021910B2 Method for producing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US08021910B2
公开(公告)日：2011-09-20
申请号：US11907902
申请日：2007-10-18
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L21/00
CPC分类号： H01L31/1804 , H01L31/1896 , Y02B10/10 , Y02E10/547 , Y02P70/521
摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; forming a transparent electroconductive film on a surface of a transparent insulator substrate; conducting a surface activating treatment for the ion implanting surface of the single crystal silicon substrate and/or a surface of the transparent electroconductive film on the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the surface of the transparent electroconductive film on the transparent insulator substrate to each other; applying an impact to the ion implanted layer; and forming a p-n junction in the single crystal silicon layer.
摘要翻译：一种单晶硅太阳能电池的制造方法，包括以下步骤：通过离子注入表面将离子注入到单晶硅衬底中，以在单晶硅衬底中形成离子注入层; 在透明绝缘体基板的表面上形成透明导电膜; 对透明绝缘体基板上的单晶硅衬底的离子注入表面和/或透明导电膜的表面进行表面激活处理; 将透明绝缘体基板上的单晶硅衬底的离子注入表面和透明导电膜的表面彼此接合; 对离子注入层施加冲击; 并在单晶硅层中形成p-n结。

16. 发明授权

US07977209B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US07977209B2
公开(公告)日：2011-07-12
申请号：US12161819
申请日：2007-02-08
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , H01L21/2007 , H01L27/1203 , H01L27/1214 , H01L29/78603
摘要： A heating plate having a smooth surface is placed on a hot plate which constitutes a heating section, and the smooth surface of the heating plate is closely adhered on the rear surface of a single-crystal Si substrate bonded to a transparent insulating substrate. The temperature of the heating plate is kept at 200° C. or higher but not higher than 350° C. When the rear surface of the single-crystal Si substrate bonded to the insulating substrate is closely adhered on the heating plate, the single-crystal Si substrate is heated by thermal conduction, and a temperature difference is generated between the single-crystal Si substrate and the transparent insulating substrate. A large stress is generated between the both substrates due to rapid expansion of the single-crystal Si substrate, thus separation takes place at a hydrogen ion-implanted interface.
摘要翻译：将具有光滑表面的加热板放置在构成加热部分的加热板上，并且加热板的光滑表面紧密地粘附在粘结到透明绝缘基板的单晶Si基板的背面上。加热板的温度保持在200℃以上但不高于350℃。当结合到绝缘基板的单晶Si衬底的后表面紧密地粘附在加热板上时，晶体硅衬底通过热传导加热，并且在单晶硅衬底和透明绝缘衬底之间产生温度差。由于单晶硅衬底的快速膨胀，在两个衬底之间产生大的应力，因此在氢离子注入界面处发生分离。

17. 发明申请

US20110111575A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 审中-公开
标题翻译：制造SOI衬底的方法
公开(公告)号：US20110111575A1
公开(公告)日：2011-05-12
申请号：US13010103
申请日：2011-01-20
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/2007 , H01L27/1203 , H01L27/1214 , H01L29/78603
摘要： A heating plate having a smooth surface is placed on a hot plate which constitutes a heating section, and the smooth surface of the heating plate is closely adhered on the rear surface of a single-crystal Si substrate bonded to a transparent insulating substrate. The temperature of the heating plate is kept at 200° C. or higher but not higher than 350° C. When the rear surface of the single-crystal Si substrate bonded to the insulating substrate is closely adhered on the heating plate, the single-crystal Si substrate is heated by thermal conduction, and a temperature difference is generated between the single-crystal Si substrate and the transparent insulating substrate. A large stress is generated between the both substrates due to rapid expansion of the single-crystal Si substrate, thus separation takes place at a hydrogen ion-implanted interface.
摘要翻译：将具有光滑表面的加热板放置在构成加热部分的加热板上，并且加热板的光滑表面紧密地粘附在粘结到透明绝缘基板的单晶Si基板的背面上。加热板的温度保持在200℃以上但不高于350℃。当结合到绝缘基板的单晶Si衬底的后表面紧密地粘附在加热板上时，晶体硅衬底通过热传导加热，并且在单晶硅衬底和透明绝缘衬底之间产生温度差。由于单晶Si衬底的快速膨胀，在两个衬底之间产生大的应力，因此在氢离子注入界面处发生分离。

18. 发明申请

US20110111574A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE 审中-公开
公开(公告)号：US20110111574A1
公开(公告)日：2011-05-12
申请号：US13010122
申请日：2011-01-20
申请人： Shoji AKIYAMA , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
发明人： Shoji AKIYAMA , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
IPC分类号： H01L21/46
CPC分类号： H01L21/76254 , C30B33/04 , H01L21/265
摘要： A nitride-based semiconductor crystal and a second substrate are bonded together. In this state, impact is applied externally to separate the low-dislocation density region of the nitride-based semiconductor crystal along the hydrogen ion-implanted layer, thereby transferring (peeling off) the surface layer part of the low-dislocation density region onto the second substrate. At this time, the lower layer part of the low-dislocation density region stays on the first substrate without being transferred onto the second substrate. The second substrate onto which the surface layer part of the low-dislocation density region has been transferred is defined as a semiconductor substrate available by the manufacturing method of the present invention, and the first substrate on which the lower layer part of the low-dislocation density region stays is reused as a substrate for epitaxial growth.

19. 发明申请

US20100289115A1 SOI SUBSTRATE AND METHOD FOR MANUFACTURING SOI SUBSTRATE 审中-公开
标题翻译： SOI衬底和制造SOI衬底的方法
公开(公告)号：US20100289115A1
公开(公告)日：2010-11-18
申请号：US12161694
申请日：2007-02-08
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L27/12 , H01L21/762
CPC分类号： H01L21/26506 , H01L21/26533 , H01L21/76254 , H01L29/78603
摘要： An oxide film having a thickness “tox” of not less than 0.2 μm is provided on the bonding surface of a single-crystal silicon substrate. In a method for manufacturing an SOI substrate according to the present invention, a low-temperature process is employed to suppress the occurrence of thermal strain attributable to a difference in the coefficient of thermal expansion between the silicon substrate and a quartz substrate. To this end, the thickness “tox” of the oxide film is set to a large value of not less than 0.2 μm to provide sufficient mechanical strength to the thin film to be separated and, at the same time, to allow strain to be absorbed in and relaxed by the relatively thick oxide film to suppress the occurrence of transfer defects during the step of separation.
摘要翻译：在单晶硅基板的接合面上设置厚度“tox”为0.2μm以上的氧化膜。在根据本发明的SOI衬底的制造方法中，采用低温工艺来抑制由硅衬底和石英衬底之间的热膨胀系数差异引起的热应变的发生。为此，氧化膜的厚度“tox”被设定为不小于0.2μm的大值，以对要分离的薄膜提供足够的机械强度，并且同时允许应变被吸收通过相对厚的氧化膜进入和松弛，以抑制分离步骤期间的转印缺陷的发生。

20. 发明授权

US07732867B2 Method for manufacturing SOQ substrate 有权
标题翻译：制造SOQ基板的方法
公开(公告)号：US07732867B2
公开(公告)日：2010-06-08
申请号：US11979447
申请日：2007-11-02
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L29/00
CPC分类号： H01L21/76254 , C30B29/06 , C30B33/00 , H01L21/2007 , H01L29/78603 , Y10S438/967 , Y10T428/31612
摘要： Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrate 10 to form the hydrogen ion implanted layer (ion-implanted damage layer) 11. As a result of the hydrogen ion implantation, the hydrogen ion implanted boundary 12 is formed. The single crystal Si substrate 10 is bonded to the quartz substrate 20 having a carbon concentration of 100 ppm or higher, and an external shock is applied near the ion-implanted damage layer 11 to delaminate the Si crystal film along the hydrogen ion implanted boundary 12 of the single crystal Si substrate 10 out of the bonded substrate. Then, the surface of the resultant silicon thin film 13 is polished to remove a damaged portion, so that an SOQ substrate can be fabricated. There can be provided an SOQ substrate highly adaptable to a semiconductor device manufacturing process.
摘要翻译：将氢离子注入到单晶Si衬底10的表面（主表面），以形成氢离子注入层（离子注入损伤层）11.作为氢离子注入的结果，氢离子注入的边界12为形成。将单晶Si衬底10接合到碳浓度为100ppm以上的石英衬底20上，并且在离子注入损伤层11附近施加外部冲击，以沿着氢离子注入边界12剥离Si晶体膜的单晶Si衬底10。然后，对所得的硅薄膜13的表面进行抛光以去除损坏部分，从而可以制造出SOQ基板。可以提供高度适应于半导体器件制造工艺的SOQ衬底。

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