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    • 14. 发明授权
    • Distributed pin diode phase shifter
    • 分布式pin二极管移相器
    • US4675628A
    • 1987-06-23
    • US706752
    • 1985-02-28
    • Arye Rosen
    • Arye Rosen
    • H01P1/185H03H11/20H01P9/00
    • H01P1/185
    • A monolithic chip phase shifter consists of a PIN diode which is laterally elongated and shaped into a microstrip-like transmission line. The transmission line has characteristics determined in part by the capacitances associated with the intrinsic layer of the diode. Alternating-current (AC) signals are coupled through the transmission line. Direct-voltage reverse bias, no bias or direct-current forward bias are applied to select the appropriate value of equivalent shunt capacitance of the transmission line to provide the desired phase shift of the AC signals passing therethrough. A high-impedance coupling device couples the bias to the transmission line to prevent leakage of signal to the bias source.
    • 单片式移相器由PIN二极管组成,该二极管横向伸长并成形为微带状传输线。 传输线具有部分由与二极管的本征层相关联的电容确定的特性。 交流(AC)信号通过传输线耦合。 施加直流电压反向偏置,不施加偏置或直流正向偏压,以选择传输线的等效分流电容的适当值,以提供通过其的AC信号的期望相移。 高阻抗耦合器件将偏压耦合到传输线,以防止信号泄漏到偏置源。
    • 15. 发明授权
    • Frequency tunable microwave apparatus having a variable impedance hybrid
idler circuit
    • 具有可变阻抗混合惰轮电路的频率可调谐微波装置
    • US4005372A
    • 1977-01-25
    • US652162
    • 1976-01-26
    • Pang-Ting HoArye Rosen
    • Pang-Ting HoArye Rosen
    • H03F3/10
    • H03F3/10
    • A frequency tunable microwave apparatus including a semiconductor TRAPATT diode generating a microwave signal at its fundamental, second and third harmonic frequencies. Energy is extracted at the second harmonic frequency and a certain impedance loading is provided at the fundamental frequency and third harmonic by a variable impedance hybrid idler circuit. The hybrid idler circuit comprises a distributed transmission line serially connected to a lumped variable capacitor. Variations in the capacitance of the variable capacitor tune the fundamental frequency without substantially varying the impedance loading conditions of the diode allowing energy to be extracted at the second harmonic frequency throughout the tunable frequency range.
    • 一种频率可调微波设备,包括半导体TRAPATT二极管,其在其基波,第二和第三谐波频率处产生微波信号。 能量以二次谐波频率提取,并且通过可变阻抗混合惰轮电路在基频和三次谐波处提供一定的阻抗负载。 混合惰轮电路包括串联连接到集总可变电容器的分布式传输线。 可变电容器的电容的变化调谐基频,而基本上不改变二极管的阻抗负载条件,允许在整个可调谐频率范围内以二次谐波频率提取能量。
    • 16. 发明授权
    • Method of electrically interconnecting semiconductor elements
    • 电连接半导体元件的方法
    • US3932226A
    • 1976-01-13
    • US530401
    • 1974-12-06
    • Jerome Barnard KlatskinArye Rosen
    • Jerome Barnard KlatskinArye Rosen
    • H01L21/00H01L23/36H01L25/03C25D5/02
    • H01L21/00H01L23/36H01L25/03H01L2924/0002
    • An improved method of electrically interconnecting a plurality of spaced semiconductor elements adjacent to a substrate, each element having a mesa shape with a top surface spaced apart from the substrate and a side surface, includes coating the side surfaces of the elements with a protective material, filling in the space above the substrate and in between the elements with a temporary support material, depositing a continuous electrically-conductive layer on the support material and in electrical contact with the top surfaces of a plurality of the elements, and then removing the temporary support material to form an electrically-conductive homogeneous air-bridge. The protective material protects the elements from being exposed to the temporary support material. By this method, a plurality of metallized air-bridges can be formed simultaneously.
    • 一种将多个间隔开的半导体元件电连接到衬底附近的改进方法,每个元件具有台面形状,其具有与衬底间隔开的顶表面和侧表面,包括用保护材料涂覆元件的侧表面, 用临时支撑材料填充在基板上方的空间和元件之间,在支撑材料上沉积连续的导电层并与多个元件的顶表面电接触,然后将临时支撑件 材料以形成导电均质空气桥。 保护材料保护元件不暴露于临时支撑材料。 通过该方法,可以同时形成多个金属化空气桥。
    • 19. 发明授权
    • Surface PIN device
    • 表面PIN设备
    • US06617670B2
    • 2003-09-09
    • US09812702
    • 2001-03-20
    • Gordon C. TaylorArye RosenAly E. FathyPradyumna K. SwainStewart M. Perlow
    • Gordon C. TaylorArye RosenAly E. FathyPradyumna K. SwainStewart M. Perlow
    • H01L31075
    • H01Q1/38H01L29/868H01Q9/0407H01Q21/061H01Q23/00H01Q25/00
    • A surface PIN (SPIN) device and a method of fabricating such a SPIN device. The SPIN device, when activated, confines carrier injection to a small volume near the surface of the device such that the device is sufficiently conductive to simulate a planar conductor. The SPIN device comprises a P+ region and an N+ region formed in an intrinsic (I) layer. The P+ and N+ regions are separated by a lateral length of intrinsic material of length L. The length L is approximately the carrier diffusion length. When DC bias is applied across the N+ and P+ regions carriers are injected into the intrinsic region at a density exceeding 1018 carriers per cubic cm. The intrinsic region is sufficiently thin to confine the carriers near the surface of the intrinsic region. As such, in the “on” state, the SPIN device simulates a conductive material. In the “off” state, the SPIN device is no longer conductive. Consequently, a planar array of SPIN devices can be fabricated and selectively activated to form a dynamic, reconfigurable antenna.
    • 表面PIN(SPIN)装置和制造这种SPIN装置的方法。 SPIN装置在被激活时将载流子注入限制在装置表面附近的小体积,使得装置足够导电以模拟平面导体。 SPIN装置包括在本征(I)层中形成的P +区和N +区。 P +和N +区域被长度为L的本征材料的横向长度分开。长度L大约是载流子扩散长度。 当跨越N +和P +区域施加直流偏压时,载流子以超过1018载体/立方厘米的密度注入本征区域。 本征区域足够薄以将载流子限制在本征区域的表面附近。 因此,在“开”状态下,SPIN装置模拟导电材料。 在“关闭”状态下,SPIN设备不再导电。 因此,可以制造并选择性地激活SPIN器件的平面阵列以形成动态的可重新配置的天线。