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11. 发明授权

US08410507B2 Thermal light source having a high color rendering quality 有权
标题翻译：具有高显色质的热光源
公开(公告)号：US08410507B2
公开(公告)日：2013-04-02
申请号：US13122779
申请日：2009-08-11
申请人： Peter Stauss , Reiner Windisch , Frank Baumann , Matthias Peter
发明人： Peter Stauss , Reiner Windisch , Frank Baumann , Matthias Peter
IPC分类号： H01L29/22 , H01L29/227 , H01L33/00
CPC分类号： H01L25/0753 , H01L33/08 , H01L33/50 , H01L2224/32225 , H01L2924/0002 , H01L2924/00
摘要： A luminous means (1) including at least one optoelectronic semiconductor device (2) which emits electromagnetic radiation during operation at at least one first wavelength (L1) and at at least one second wavelength (L2), wherein the first wavelength (L1) and the second wavelength (L2) differ from one another and are below 500 nm, in particular between 200 nm and 500 nm. Furthermore, the luminous means (1) includes at least one conversion means (3) which converts the first wavelength (L1) at least partly into radiation having a different frequency. The radiation spectrum emitted by the luminous means (1) during operation is metameric with respect to a black body spectrum. Such a luminous means makes it possible to choose the first wavelength and the second wavelength in such a way that a high color rendering quality and a high efficiency of the luminous means can be realized simultaneously.
摘要翻译：一种发光装置（1），包括至少一个在至少一个第一波长（L1）和至少一个第二波长（L2）的操作期间发射电磁辐射的光电子半导体器件，其中第一波长（L1）和第二波长（L2）彼此不同，低于500nm，特别是在200nm和500nm之间。此外，发光装置（1）包括至少一个转换装置（3），其将第一波长（L1）至少部分地转换成具有不同频率的辐射。在运行期间由发光装置（1）发射的辐射光谱相对于黑体光谱是相同的。这样的发光装置使得可以选择第一波长和第二波长，使得可以同时实现发光装置的高显色质量和高效率。

12. 发明申请

US20060180804A1 Thin-film semiconductor component and production method for said component 审中-公开
标题翻译：薄膜半导体元件及其制造方法
公开(公告)号：US20060180804A1
公开(公告)日：2006-08-17
申请号：US10544159
申请日：2004-01-27
申请人： Peter Stauss , Andreas Ploessl
发明人： Peter Stauss , Andreas Ploessl
IPC分类号： H01L29/06
CPC分类号： H01L33/02 , H01L21/187 , H01L21/6835 , H01L24/29 , H01L24/83 , H01L33/0079 , H01L33/30 , H01L2221/68354 , H01L2224/29 , H01L2224/291 , H01L2224/29101 , H01L2224/29144 , H01L2224/29298 , H01L2224/83001 , H01L2224/8319 , H01L2224/83224 , H01L2224/83801 , H01L2224/83805 , H01L2924/00011 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01023 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/0106 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/10329 , H01L2924/12036 , H01L2924/12041 , H01L2924/157 , H01L2924/00 , H01L2924/01031 , H01L2924/3512 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
摘要： A semiconductor component having a thin-film semiconductor body (2) arranged on a germanium-containing carrier (4). A method for producing such a semiconductor component includes producing a semiconductor component having a thin-film conductor body arranged on a carrier, having the steps of growing the thin-film semiconductor body on a substrate, applying the carrier to a side of the thin-film semiconductor body that is remote from the substrate, and stripping the thin-film semiconductor body from the substrate, wherein the carrier contains germanium.
摘要翻译：一种具有布置在含锗载体（4）上的薄膜半导体本体（2）的半导体部件。制造这种半导体部件的方法包括制造具有布置在载体上的薄膜导体体的半导体部件，具有将薄膜半导体体在基板上生长的步骤，将载体施加到薄膜导体本体的一侧，膜半导体本体，其远离衬底，并从衬底剥离薄膜半导体本体，其中载体包含锗。

13. 发明授权

US07042013B2 Radiation-emitting semiconductor component 有权
标题翻译：辐射发射半导体元件
公开(公告)号：US07042013B2
公开(公告)日：2006-05-09
申请号：US10647000
申请日：2003-08-22
申请人： Norbert Linder , Peter Stauss , Mark Hampel , Klaus Streubel
发明人： Norbert Linder , Peter Stauss , Mark Hampel , Klaus Streubel
IPC分类号： H01L27/15
CPC分类号： H01L33/30 , H01L33/04
摘要： A radiation-emitting semiconductor component having a layer structure which contains an n-doped cladding layer (18), a p-doped cladding layer (20), and an active layer (14) based on InGaAlP arranged between the n-doped cladding layer (18) and the p-doped cladding layer (20). A diffusion stop layer (16) is arranged between the active layer (14) and the p-doped cladding layer (20). The diffusion stop layer (16) is formed by a strained superlattice.
摘要翻译：一种具有包含n掺杂包层（18），p掺杂包层（20）和基于InGaAlP的有源层（14）的层结构的辐射发射半导体部件，其布置在n掺杂包层（18）和p掺杂包层（20）。扩散阻挡层（16）布置在有源层（14）和p掺杂覆层（20）之间。扩散停止层（16）由应变超晶格形成。

14. 发明申请

US20120132687A1 FASTENER DRIVING TOOL 审中-公开
标题翻译：紧固件驱动工具
公开(公告)号：US20120132687A1
公开(公告)日：2012-05-31
申请号：US13302107
申请日：2011-11-22
申请人： Tilo Dittrich , Heeb Norbert , Peter Stauss , Simon Beauvais
发明人： Tilo Dittrich , Heeb Norbert , Peter Stauss , Simon Beauvais
IPC分类号： B25C1/14
CPC分类号： B25C1/08
摘要： The invention relates to a fastener driving tool comprising a tank (5) for storing a fuel, in particular liquefied petroleum gas, a combustion chamber (2) connected to the tank, wherein the combustion chamber (2) has a movable piston for powering a driving plunger, and a metering device (4) arranged between the tank (5) and the combustion chamber (2), wherein a defined quantity of fuel can be transported by means of the metering device (4) from a metering space (12) into the combustion chamber, wherein the metering device (4) comprises an electric stepper motor (15) by means of which the defined amount can be varied as a function of a temperature.
摘要翻译：本发明涉及一种紧固件驱动工具，其包括用于储存燃料（特别是液化石油气）的罐（5），连接到罐的燃烧室（2），其中燃烧室（2）具有可动活塞，用于为驱动柱塞和设置在燃料箱（5）和燃烧室（2）之间的计量装置（4），其中定量的燃料可以通过计量装置（4）从计量空间（12）输送，进入燃烧室，其中计量装置（4）包括电步进电动机（15），通过该电动步进电动机可以根据温度变化限定的量。

15. 发明申请

US20110248295A1 Lamp 有权
标题翻译：灯
公开(公告)号：US20110248295A1
公开(公告)日：2011-10-13
申请号：US13122779
申请日：2009-08-11
申请人： Peter Stauss , Reiner Windisch , Frank Baumann , Matthias Peter
发明人： Peter Stauss , Reiner Windisch , Frank Baumann , Matthias Peter
IPC分类号： H01L33/50
CPC分类号： H01L25/0753 , H01L33/08 , H01L33/50 , H01L2224/32225 , H01L2924/0002 , H01L2924/00
摘要： In at least one embodiment of the luminous means (1), the latter comprises at least one optoelectronic semiconductor device (2) which emits electromagnetic radiation during operation at at least one first wavelength (L1) and at least one second wavelength (L2), wherein the first wavelength (L1) and the second wavelength (L2) differ from one another and are below 500 nm, in particular between 200 nm and 500 nm. Furthermore, the luminous means (1) comprises at least one conversion means (3) which converts the first wavelength (L1) at least partly into radiation having a different frequency. The radiation spectrum emitted by the luminous means (1) during operation is metameric with respect to a black body spectrum. Such a luminous means makes it possible to choose the first wavelength and the second wavelength in such a way that a high color rendering quality and a high efficiency of the luminous means can be realized simultaneously.
摘要翻译：在发光装置（1）的至少一个实施例中，后者包括在至少一个第一波长（L1）和至少一个第二波长（L2）的操作期间发射电磁辐射的至少一个光电半导体器件（2）其中第一波长（L1）和第二波长（L2）彼此不同，并且低于500nm，特别是在200nm和500nm之间。此外，发光装置（1）包括至少一个转换装置（3），其将第一波长（L1）至少部分转换成具有不同频率的辐射。在运行期间由发光装置（1）发射的辐射光谱相对于黑体光谱是相同的。这样的发光装置使得可以选择第一波长和第二波长，使得可以同时实现发光装置的高显色质量和高效率。

16. 发明申请

US20110042643A1 Optoelectronic Semiconductor Chip Having a Multiple Quantum Well Structure 有权
标题翻译：具有多量子阱结构的光电半导体芯片
公开(公告)号：US20110042643A1
公开(公告)日：2011-02-24
申请号：US12680463
申请日：2008-09-12
申请人： Peter Stauss , Matthias Peter , Alexander Walter
发明人： Peter Stauss , Matthias Peter , Alexander Walter
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/04 , H01L33/32 , H01L2924/0002 , H01S5/3086 , H01S5/34 , H01L2924/00
摘要： An optoelectronic semiconductor chip is specified, which has an active zone (20) containing a multi quantum well structure provided for generating electromagnetic radiation, which comprises a plurality of successive quantum well layers (210, 220, 230). The multi quantum well structure comprises at least one first quantum well layer (210), which is n-conductively doped and which is arranged between two n-conductively doped barrier layers (250) adjoining the first quantum well layer. It comprises a second quantum well layer (220), which is undoped and is arranged between two barrier layers (250, 260) adjoining the second quantum well layer, of which one is n-conductively doped and the other is undoped. In addition, the multi quantum well structure comprises at least one third quantum well layer (230), which is undoped and which is arranged between two undoped barrier layers (260) adjoining the third quantum well layer.
摘要翻译：规定了一种光电子半导体芯片，其具有包含多个量子阱结构的活动区域（20），所述有源区域包括多个连续量子阱层（210,220,230），所述有源区域包括用于产生电磁辐射的多量子阱结构。多量子阱结构包括至少一个第一量子阱层（210），其被n导电掺杂并且布置在邻接第一量子阱层的两个n导电掺杂阻挡层（250）之间。它包括未掺杂的第二量子阱层（220），并且被布置在邻接第二量子阱层的两个势垒层（250,260）之间，其中一个是n导电掺杂的，另一个是未掺杂的。另外，多量子阱结构包括至少一个未掺杂的第三量子阱层（230），其布置在与第三量子阱层相邻的两个未掺杂的势垒层（260）之间。

17. 发明授权

US07459727B2 Optoelectronic component and method of fabricating same 有权
标题翻译：光电子元件及其制造方法
公开(公告)号：US07459727B2
公开(公告)日：2008-12-02
申请号：US11137680
申请日：2005-05-25
申请人： Peter Stauss
发明人： Peter Stauss
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L33/0079 , H01L33/46 , H01L2924/0002 , Y10S438/93 , H01L2924/00
摘要： The invention concerns an optoelectronic component comprising a layer stack that includes at least two active zones and a carrier that is applied to the layer stack. The invention further concerns a method of fabricating such an optoelectronic component.
摘要翻译：本发明涉及一种光电子部件，其包括层堆叠，其包括至少两个活动区域和施加到层叠层的载体。本发明还涉及制造这种光电子部件的方法。

18. 发明授权

US07435605B2 Method for fabricating a component having an electrical contact region 有权
标题翻译：一种具有电接触区域的部件的制造方法
公开(公告)号：US07435605B2
公开(公告)日：2008-10-14
申请号：US11825895
申请日：2007-07-09
申请人： Stefan Illek , Peter Stauss , Andreas Ploessl , Gudrun Diepold , Ines Pietzonka , Wilhelm Stein , Ralph Wirth , Walter Wegleiter
发明人： Stefan Illek , Peter Stauss , Andreas Ploessl , Gudrun Diepold , Ines Pietzonka , Wilhelm Stein , Ralph Wirth , Walter Wegleiter
IPC分类号： H01L21/00
CPC分类号： H01L33/40 , H01L33/0079 , H01L33/30 , Y10S438/933
摘要： A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.
摘要翻译：一种制造在外延生长的半导体层序列的基于n导电AlGaInP基或AlGaInP的外层上具有电接触区域的部件的方法，其中应用包括Au和至少一种掺杂剂的电接触材料然后将外层退火。掺杂剂含有选自Ge，Si，Sn和Te中的至少一种元素。此外，公开了一种组件，其包括具有发射电磁辐射的有源区的外延生长的半导体层序列，所述半导体层序列具有基于导电AlGaInP或AlGaInAs的外层，施加电接触区域使用所述方法。

19. 发明申请

US20070264740A1 Method for fabricating a component having an electrical contact region 有权
标题翻译：一种具有电接触区域的部件的制造方法
公开(公告)号：US20070264740A1
公开(公告)日：2007-11-15
申请号：US11825895
申请日：2007-07-09
申请人： Stefan Illek , Peter Stauss , Andreas Ploessl , Gudrun Diepold , Ines Pietzonka , Wilhelm Stein , Ralph Wirth , Walter Wegleiter
发明人： Stefan Illek , Peter Stauss , Andreas Ploessl , Gudrun Diepold , Ines Pietzonka , Wilhelm Stein , Ralph Wirth , Walter Wegleiter
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/0079 , H01L33/30 , Y10S438/933
摘要： A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.
摘要翻译：一种制造在外延生长的半导体层序列的基于n导电AlGaInP基或AlGaInP的外层上具有电接触区域的部件的方法，其中应用包括Au和至少一种掺杂剂的电接触材料然后将外层退火。掺杂剂含有选自Ge，Si，Sn和Te中的至少一种元素。此外，公开了一种组件，其包括具有发射电磁辐射的有源区的外延生长的半导体层序列，该半导体层序列具有基于n导电AlGaInP或AlGaInAs的外层，施加电接触区域使用所述方法。

20. 发明申请

US20070170224A1 Setting Tool 有权
标题翻译：设置工具
公开(公告)号：US20070170224A1
公开(公告)日：2007-07-26
申请号：US11655327
申请日：2007-01-19
申请人： Rolf Erhardt , Peter Stauss , Dierk Tille
发明人： Rolf Erhardt , Peter Stauss , Dierk Tille
IPC分类号： B25C1/14
CPC分类号： B25C1/008
摘要： A setting tool for driving a fastening element in a constructional component includes a housing (11), a drive member (13) displaceable in a guide (12) located in the housing, a bolt guide (15) adjoining the drive member guide (12) in direction of the operational axis (A) and forming a dog point (16) for abutting the constructional component and a drive-in depth setting tool (20) for displacing the bolt guide (15) axially relative to the drive member guide (15) for setting a distance between a drive end (14) of the drive member (13) and the dog point (16) in the initial position of the drive member.
摘要翻译：用于驱动结构部件中的紧固元件的固定工具包括壳体（11），可位于壳体中的引导件（12）中移动的驱动构件（13），邻近驱动构件引导件（12）的螺栓引导件），并且形成用于邻接结构部件的锁定点（16）和用于相对于驱动构件引导件轴向移动螺栓引导件（15）的驱动深度设置工具（20） 15），用于在驱动构件的初始位置设定驱动构件（13）的驱动端（14）与限位点（16）之间的距离。

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