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11. 发明授权

US07316888B2 Positive type resist composition and resist pattern formation method using same 有权
标题翻译：正型抗蚀剂组合物和使用其的抗蚀剂图案形成方法
公开(公告)号：US07316888B2
公开(公告)日：2008-01-08
申请号：US11347102
申请日：2006-02-02
申请人： Takeshi Iwai , Naotaka Kubota , Satoshi Fujimura , Miwa Miyairi , Hideo Hada
发明人： Takeshi Iwai , Naotaka Kubota , Satoshi Fujimura , Miwa Miyairi , Hideo Hada
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： There is provided a positive type resin composition comprising (A) a resin component comprising within the principal chain a structural unit derived from a (meth)acrylate ester and incorporating an acid dissociable, dissolution inhibiting group containing a polycyclic group on an ester side chain section, for which the solubility in alkali increases under the action of acid, (B) an acid generator component which generates acid on exposure, and (C) an organic solvent, wherein the component (A) comprises both a structural unit derived from a methacrylate ester and a structural unit derived from an acrylate ester. According to such a resist composition, a resist pattern can be formed which displays little surface roughness and line edge roughness on etching, and also offers excellent resolution and a wide depth of focus range.
摘要翻译：提供一种正型树脂组合物，其包含（A）树脂组分，其在主链内包含衍生自（甲基）丙烯酸酯的结构单元，并且在酯侧链部分上并入含有多环基团的酸解离的溶解抑制基团（B）在暴露时产生酸的酸产生剂组分和（C）有机溶剂，其中组分（A）包含衍生自甲基丙烯酸酯的结构单元酯和衍生自丙烯酸酯的结构单元。根据这样的抗蚀剂组合物，可以形成抗蚀剂图案，其在蚀刻时显示出很小的表面粗糙度和线边缘粗糙度，并且还提供优异的分辨率和宽的焦深范围。

12. 发明申请

US20060147832A1 Polymer and positive type resist composition 审中-公开
标题翻译：聚合物和正型抗蚀剂组合物
公开(公告)号：US20060147832A1
公开(公告)日：2006-07-06
申请号：US10547632
申请日：2004-02-26
申请人： Hideo Hada , Miwa Miyairi , Takeshi Iwai
发明人： Hideo Hada , Miwa Miyairi , Takeshi Iwai
IPC分类号： G03C1/76
CPC分类号： G03F7/0397
摘要： There is provided technology that enables the suppression of the surface roughness that occurs within a resist pattern, either following etching or following developing, or preferably following both processes. According to this technology, a resist pattern is formed using a positive resist composition including a resin component (A), which contains a structural unit (a1) containing a lactone, as represented by a general formula shown below, and exhibits increased alkali solubility under the action of acid, (wherein, R represents a hydrogen atom or a methyl group), an acid generator component (B) that generates acid on exposure, and an organic solvent (C).
摘要翻译：提供了能够抑制在抗蚀剂图案中发生的表面粗糙度的技术，无论是在蚀刻之后还是在显影之后，或优选地在两个过程之后。根据该技术，使用包含树脂组分（A）的正型抗蚀剂组合物形成抗蚀剂图案，该抗蚀剂图案含有如下所示的通式所示的含有内酯的结构单元（a1），并且表现出增加的碱溶解度酸的作用（其中，R表示氢原子或甲基），曝光时产生酸的酸产生剂成分（B）和有机溶剂（C）。

13. 发明申请

US20060141382A1 Resist composition and method of forming resist pattern using same 审中-公开
标题翻译：抗蚀剂组合物和使用其形成抗蚀剂图案的方法
公开(公告)号：US20060141382A1
公开(公告)日：2006-06-29
申请号：US10531883
申请日：2003-12-18
申请人： Masaru Takeshita , Miwa Miyairi , Hideo Hada , Takeshi Iwai
发明人： Masaru Takeshita , Miwa Miyairi , Hideo Hada , Takeshi Iwai
IPC分类号： G03C1/76
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0397
摘要： There are provided a resist composition that produces a resist pattern of good shape, and a method of forming a resist pattern that uses such a resist composition. The resist composition comprises a resin component (A) that undergoes a change in alkali solubility under the action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C), wherein the component (B) comprises a compound represented by a general formula (I) shown below [wherein, R1 to R3 each represent, independently, a methyl group or an ethyl group; and X− represents an anion].
摘要翻译：提供了产生良好形状的抗蚀剂图案的抗蚀剂组合物，以及形成使用这种抗蚀剂组合物的抗蚀剂图案的方法。抗蚀剂组合物包含在酸作用下碱溶性变化的树脂组分（A），暴露时产生酸的酸产生剂组分（B）和有机溶剂（C），其中组分（B）包含由以下所示的通式（I）表示的化合物[其中，R 1至R 3各自独立地表示甲基或乙基; 和X - 代表阴离子]。

14. 发明申请

US20060134553A1 Positive type resist composition and resist pattern formation method using same 有权
公开(公告)号：US20060134553A1
公开(公告)日：2006-06-22
申请号：US11347423
申请日：2006-02-02
申请人： Takeshi Iwai , Naotaka Kubota , Satoshi Fujimura , Miwa Miyairi , Hideo Hada
发明人： Takeshi Iwai , Naotaka Kubota , Satoshi Fujimura , Miwa Miyairi , Hideo Hada
IPC分类号： G03C1/76
CPC分类号： G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： There is provided a positive type resin composition comprising (A) a resin component comprising within the principal chain a structural unit derived from a (meth)acrylate ester and incorporating an acid dissociable, dissolution inhibiting group containing a polycyclic group on an ester side chain section, for which the solubility in alkali increases under the action of acid, (B) an acid generator component which generates acid on exposure, and (C) an organic solvent, wherein the component (A) comprises both a structural unit derived from a methacrylate ester and a structural unit derived from an acrylate ester. According to such a resist composition, a resist pattern can be formed which displays little surface roughness and line edge roughness on etching, and also offers excellent resolution and a wide depth of focus range.

15. 发明授权

US06749991B2 Negative-working photoresist composition 有权
公开(公告)号：US06749991B2
公开(公告)日：2004-06-15
申请号：US10196681
申请日：2002-07-18
申请人： Hideo Hada , Takeshi Iwai , Satoshi Fujimura
发明人： Hideo Hada , Takeshi Iwai , Satoshi Fujimura
IPC分类号： G03F7004
CPC分类号： G03F7/0382 , Y10S430/106 , Y10S430/111
摘要： Disclosed is a chemical-amplification negative-working photoresist composition used for photolithographic patterning in the manufacture of semiconductor devices suitable for patterning light-exposure to ArF excimer laser beams and capable of giving a high-resolution patterned resist layer free from swelling and having an orthogonal cross sectional profile by alkali-development. The characteristic ingredient of the composition is the resinous compound which has two types of functional groups, e.g., hydroxyalkyl groups and carboxyl or carboxylate ester groups, capable of reacting each with the other to form intramolecular and/or intermolecular ester linkages in the presence of an acid released from the radiation-sensitive acid generating agent to cause insolubilization of the resinous ingredient in an aqueous alkaline developer solution.

16. 发明授权

US06444397B1 Negative-working photoresist composition 有权
公开(公告)号：US06444397B1
公开(公告)日：2002-09-03
申请号：US09865530
申请日：2001-05-29
申请人： Hideo Hada , Takeshi Iwai , Satoshi Fujimura
发明人： Hideo Hada , Takeshi Iwai , Satoshi Fujimura
IPC分类号： G03F7004
摘要： Disclosed is a chemical-amplification negative-working photoresist composition used for photolithographic patterning in the manufacture of semiconductor devices suitable for patterning light-exposure to ArF excimer laser beams and capable of giving a high-resolution patterned resist layer free from swelling and having an orthogonal cross sectional profile by alkali-development. The characteristic ingredient of the composition is the resinous compound which has two types of functional groups, e.g., hydroxyalkyl groups and carboxyl or carboxylate ester groups, capable of reacting each with the other to form intramolecular and/or intermolecular ester linkages in the presence of an acid released from the radiation-sensitive acid generating agent to cause insolubilization of the resinous ingredient in an aqueous alkaline developer solution.

17. 发明授权

US07855044B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07855044B2
公开(公告)日：2010-12-21
申请号：US11993005
申请日：2006-06-16
申请人： Masaru Takeshita , Hideo Hada , Takeshi Iwai
发明人： Masaru Takeshita , Hideo Hada , Takeshi Iwai
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , C08F220/28 , G03F7/0045 , Y10S430/111
摘要： A positive resist composition including a resin component (A) and an acid generator component (B), the resin component (A) including a copolymer (A1) having a structural unit (a1) derived from an acrylate ester having a monocyclic or polycyclic group-containing acid dissociable, dissolution inhibiting group, a structural unit (a2) derived from an acrylate ester having a lactone-containing cyclic group, a structural unit (a3) derived from an acrylate ester having a hydroxyl group and/or cyano group-containing polycyclic group, and a structural unit (a4) represented by general formula (a4-1) shown below: wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group or a halogenated lower alkyl group; R′ represents a hydrogen atom, a lower alkyl group or an alkoxy group of 1 to 5 carbon atoms; and f represents 0 or 1.
摘要翻译：包含树脂组分（A）和酸产生剂组分（B）的正型抗蚀剂组合物，所述树脂组分（A）包含具有衍生自具有单环或多环基团的丙烯酸酯的结构单元（a1）的共聚物（A1）含有可离解的溶解抑制基团，衍生自具有含内酯环状基团的丙烯酸酯的结构单元（a2），衍生自具有羟基和/或含氰基的丙烯酸酯的结构单元（a3）多环基和由以下通式（a4-1）表示的结构单元（a4）：其中R表示氢原子，卤素原子，低级烷基或卤代低级烷基; R'表示氢原子，低级烷基或碳原子数1〜5的烷氧基。 f表示0或1。

18. 发明授权

US07544460B2 Resist composition, multilayer body, and method for forming resist pattern 有权
标题翻译：抗蚀剂组合物，多层体和形成抗蚀剂图案的方法
公开(公告)号：US07544460B2
公开(公告)日：2009-06-09
申请号：US10563705
申请日：2004-07-07
申请人： Hideo Hada , Kazuhito Sasaki , Satoshi Fujimura , Takeshi Iwai
发明人： Hideo Hada , Kazuhito Sasaki , Satoshi Fujimura , Takeshi Iwai
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/40 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A resist composition is disclosed that enables formation of a favorable resist pattern using a shrink process in which, following formation of the resist pattern, a treatment such as heating is used to narrow the resist pattern, and also disclosed are a laminate and a method for forming a resist pattern that use such a resist composition. This resist composition includes a resin component (A) that displays changed alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure. The component (A) contains structural units derived from a (meth)acrylate ester, and exhibits a glass transition temperature that falls within a range from 120 to 170° C.
摘要翻译：公开了一种抗蚀剂组合物，其能够使用收缩方法形成良好的抗蚀剂图案，其中，在形成抗蚀剂图案之后，使用诸如加热的处理来缩小抗蚀剂图案，并且还公开了层压体和方法形成使用这种抗蚀剂组合物的抗蚀剂图案。该抗蚀剂组合物包含在酸的作用下显示出碱溶解性变差的树脂成分（A）和曝光时产生酸的酸发生剂成分（B）。组分（A）含有衍生自（甲基）丙烯酸酯的结构单元，其玻璃化转变温度为120-170℃。

19. 发明授权

US07482108B2 Polymer compound, acid generator, positive resist composition, and method for formation of resist patterns 失效
标题翻译：高分子化合物，酸发生剂，正性抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07482108B2
公开(公告)日：2009-01-27
申请号：US11572990
申请日：2005-07-01
申请人： Shogo Matsumaru , Masaru Takeshita , Takeshi Iwai , Hideo Hada
发明人： Shogo Matsumaru , Masaru Takeshita , Takeshi Iwai , Hideo Hada
IPC分类号： G30F7/00 , G30F7/004
CPC分类号： G03F7/0045 , C08F220/18 , C08F220/28 , C08F220/38 , G03F7/0397 , Y10S430/106 , Y10S430/114
摘要： The invention provides a polymer compound capable of forming a positive resist composition that can form a high-resolution pattern with a reduced level of LER, an acid generator formed from such a polymer compound, a positive resist composition that includes such a polymer compound, and a method for forming a resist pattern that uses such a positive resist composition. The polymer compound includes a structural unit (a1) derived from an (α-lower alkyl) acrylate ester having an acid-dissociable, dissolution-inhibiting group, a structural unit (a2) represented by a general formula (a2-1) shown below [wherein, R represents a hydrogen atom or a lower alkyl group; A represents a divalent organic group; B represents a monovalent organic group; X represents a sulfur atom or iodine atom; n represents either 1 or 2; and Y represents a straight-chain, branched or cyclic alkyl group in which at least one hydrogen atom may be substituted with a fluorine atom], and a structural unit (a3) derived from an (α-lower alkyl) acrylate ester that contains a polar group-containing aliphatic polycyclic group.
摘要翻译：本发明提供一种能够形成正性抗蚀剂组合物的高分子化合物，其可以形成具有降低的LER水平的高分辨率图案，由这种高分子化合物形成的酸发生剂，包含这种高分子化合物的正性抗蚀剂组合物和形成使用这种正性抗蚀剂组合物的抗蚀剂图案的方法。高分子化合物包括衍生自具有酸解离性，溶解抑制基团的（α-低级烷基）丙烯酸酯的结构单元（a1），由以下所示的通式（a2-1）表示的结构单元（a2） [式中，R表示氢原子或低级烷基; A表示二价有机基团; B表示一价有机基团; X表示硫原子或碘原子; n表示1或2; 和Y表示其中至少一个氢原子可被氟原子取代的直链，支链或环状烷基]和衍生自（α-低级烷基）丙烯酸酯的结构单元（a3），其包含含极性基团的脂族多环基团。

20. 发明授权

US07390612B2 Positive type resist composition and resist pattern formation method using same 有权
公开(公告)号：US07390612B2
公开(公告)日：2008-06-24
申请号：US11347055
申请日：2006-02-02
申请人： Takeshi Iwai , Naotaka Kubota , Satoshi Fujimura , Miwa Miyairi , Hideo Hada
发明人： Takeshi Iwai , Naotaka Kubota , Satoshi Fujimura , Miwa Miyairi , Hideo Hada
IPC分类号： G03F7/004 , G03F7/32
CPC分类号： G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： There is provided a positive type resin composition comprising (A) a resin component comprising within the principal chain a structural unit derived from a (meth)acrylate ester and incorporating an acid dissociable, dissolution inhibiting group containing a polycyclic group on an ester side chain section, for which the solubility in alkali increases under the action of acid, (B) an acid generator component which generates acid on exposure, and (C) an organic solvent, wherein the component (A) comprises both a structural unit derived from a methacrylate ester and a structural unit derived from an acrylate ester. According to such a resist composition, a resist pattern can be formed which displays little surface roughness and line edge roughness on etching, and also offers excellent resolution and a wide depth of focus range.

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