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    • 15. 发明授权
    • Spin valve transistor
    • 自旋阀晶体管
    • US06833598B2
    • 2004-12-21
    • US10320648
    • 2002-12-17
    • Rie SatoKoichi Mizushima
    • Rie SatoKoichi Mizushima
    • H01L2982
    • H01L29/66984
    • There is provided a spin valve transistor that comprises a collector region made of semiconductor, a base region provided on the collector region and including a first ferromagnetic layer whose magnetization direction changes in accordance with a direction of an external magnetic field, a barrier layer provided on the base layer and made of insulator or semiconductor, and an emitter region provided on the barrier layer and including a second ferromagnetic layer whose magnetization direction is fixed.
    • 提供了一种自旋阀晶体管,其包括由半导体制成的集电极区域,设置在集电极区域上的基极区域,并且包括其磁化方向根据外部磁场的方向而变化的第一铁磁层,设置在其上的阻挡层 所述基底层由绝缘体或半导体制成,以及设置在所述阻挡层上并包括其磁化方向固定的第二铁磁层的发射极区域。
    • 19. 发明授权
    • Magnetic oscillation element
    • 磁振元件
    • US08207806B2
    • 2012-06-26
    • US13216968
    • 2011-08-24
    • Kiwamu KudoKoichi MizushimaTazumi NagasawaRie Sato
    • Kiwamu KudoKoichi MizushimaTazumi NagasawaRie Sato
    • H01F1/00H01F3/00H01F7/00
    • H03B15/006H01L43/08
    • According to one embodiment, magnetization directions of a magnetic free layer and a magnetic pinned layer are parallel to junction planes between the magnetic free layer and a spacer layer and between the magnetic pinned layer and the spacer layer. The magnetic free layer has a uniaxial magnetic anisotropy, and generates a magnetization oscillation when a current larger than an oscillation threshold current flows through the magnetic free layer. A magnetic field generator controls a magnitude and a direction of an external magnetic field to cancel a shift amount of an oscillation frequency caused by a diamagnetic field due to the magnetization oscillation and a shift amount of the oscillation frequency caused by a magnetic field due to the uniaxial magnetic anisotropy.
    • 根据一个实施例,磁性自由层和磁性被钉扎层的磁化方向平行于磁性自由层和间隔层之间以及磁性被钉扎层和间隔层之间的结面。 磁性自由层具有单轴磁各向异性,并且当大于振荡阈值电流的电流流过无磁层时,产生磁化振动。 磁场发生器控制外部磁场的大小和方向,以抵消由于磁化振动引起的由抗磁场引起的振荡频率的偏移量和由于磁场引起的磁场引起的振荡频率的偏移量 单轴磁各向异性。
    • 20. 发明授权
    • High-frequency oscillation element, magnetic information recording head, and magnetic storage device
    • 高频振荡元件,磁信息记录头和磁存储装置
    • US07961439B2
    • 2011-06-14
    • US10878387
    • 2004-06-29
    • Rie SatoKoichi Mizushima
    • Rie SatoKoichi Mizushima
    • G11B5/39
    • G11B5/314G11B2005/0005H03B15/006
    • A high-frequency oscillation element has a ferromagnetic material which exhibits thermal fluctuation of magnetization and generates spin fluctuations in conduction electrons, a nonmagnetic conductive material which is laminated on the first magnetic material and transfers the conduction electrons, a magnetic material which is laminated on the nonmagnetic conductive material, generates magnetic resonance upon injection of the conduction electrons, and imparts magnetic dipole interaction to magnetization of a neighboring magnetic area by means of magnetic vibration stemming from the magnetic resonance, a first electrode electrically coupled with the first magnetic material, and a second electrode electrically coupled with the second magnetic material.
    • 高频振荡元件具有表现出磁化强度波动并产生导电电子自旋波动的铁磁材料,层叠在第一磁性材料上并传导导电电子的非磁性导电材料,层叠在第一磁性材料上的磁性材料 非磁性导电材料在注入导电电子时产生磁共振,并且借助于从磁共振产生的磁振动,与第一磁性材料电耦合的第一电极和相互磁性区域的电磁耦合,使相邻磁场的磁化与磁偶极相互作用,以及 与第二磁性材料电耦合的第二电极。