专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20070256787A1 Plasma reactor with a dynamically adjustable plasma source power applicator 有权
标题翻译：具有动态可调等离子体源功率施加器的等离子体反应器
公开(公告)号：US20070256787A1
公开(公告)日：2007-11-08
申请号：US11416802
申请日：2006-05-03
申请人： Madhavi Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim Ibrahim , Michael Grimbergen , Renee Koch , Sheeba Panayil
发明人： Madhavi Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim Ibrahim , Michael Grimbergen , Renee Koch , Sheeba Panayil
IPC分类号： C23F1/00
CPC分类号： H01J37/321 , H01L21/67069
摘要： A plasma reactor for processing a workpiece includes a process chamber having an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to the ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and having a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to the inner and outer applicator portions, and tilt apparatus supporting at least the outer applicator portion and capable of tilting at least the outer applicator portion about a radial axis perpendicular to the axis of symmetry and capable of rotating at least the outer applicator portion about the axis of symmetry. The reactor can further include elevation apparatus for changing the location of the inner and outer portions relative to one another along the vertical axis of symmetry. In a preferred embodiment, the elevation apparatus includes a lift actuator for raising and lowering the inner applicator portion along the vertical axis of symmetry.
摘要翻译：用于处理工件的等离子体反应器包括处理室，其具有包括天花板的外壳，其具有垂直于天花板的垂直对称轴线，腔室内的工件支撑基座和大体上面对天花板的工艺气体注入装置，腔室和耦合到腔室的真空泵。反应器还包括覆盖天花板并具有径向内部施加器部分和径向外部施加器部分的等离子体源功率施加器，以及耦合到内部和外部施加器部分的RF功率设备，以及至少支撑外部施加器部分和能够使至少外部施加部分围绕垂直于对称轴线的径向轴线倾斜，并且能够使至少外部施加器部分围绕对称轴线旋转。反应器可以进一步包括升高装置，用于沿垂直对称轴线相对于彼此改变内部和外部部分的位置。在优选实施例中，升降装置包括用于沿着垂直对称轴升高和降低内部施加器部分的升降致动器。

12. 发明申请

US20060166106A1 Method for photomask plasma etching using a protected mask 有权
标题翻译：使用保护掩模的光掩模等离子体蚀刻的方法
公开(公告)号：US20060166106A1
公开(公告)日：2006-07-27
申请号：US11044339
申请日：2005-01-27
申请人： Madhavi Chandrachood , Ajay Kumar , Wai-Fan Yau
发明人： Madhavi Chandrachood , Ajay Kumar , Wai-Fan Yau
IPC分类号： C03C25/68 , B44C1/22 , C23F3/00 , C23F1/00 , C03C15/00 , G03F1/00
CPC分类号： G03F1/80
摘要： A method for etching chromium and forming a photomask is provided. In one embodiment, a method for etching chromium includes providing a film stack in a processing chamber having a chromium layer, patterning a photoresist layer on the film stack, depositing a conformal protective layer on the patterned photoresist layer, etching the conformal protective layer to expose a chromium layer through the patterned photoresist layer, and etching the chromium layer. The methods for etching chromium of the present invention are particularly suitable for fabricating photomasks.
摘要翻译：提供了蚀刻铬并形成光掩模的方法。在一个实施例中，用于蚀刻铬的方法包括在具有铬层的处理室中提供膜堆叠，图案化膜叠层上的光致抗蚀剂层，在图案化的光致抗蚀剂层上沉积保形层，蚀刻保形层以露出通过图案化的光致抗蚀剂层的铬层，以及蚀刻铬层。本发明的蚀刻铬的方法特别适用于制造光掩模。

13. 发明申请

US20070256784A1 Plasma reactor with apparatus for dynamically adjusting the plasma source power applicator and the workpiece relative to one another 有权
标题翻译：一种具有用于相对于彼此动态地调节等离子体源功率施加器和工件的装置的等离子体反应器
公开(公告)号：US20070256784A1
公开(公告)日：2007-11-08
申请号：US11416547
申请日：2006-05-03
申请人： Madhavi Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim Ibrahim , Michael Grimbergen , Renee Koch , Sheeba Panayil
发明人： Madhavi Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim Ibrahim , Michael Grimbergen , Renee Koch , Sheeba Panayil
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01J37/321 , H01L21/68764
摘要： A plasma reactor for processing a workpiece includes a process chamber comprising an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to said ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and comprising a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to said inner and outer applicator portions, and tilt apparatus capable of tilting either the workpiece support pedestal or the outer applicator portion about a radial axis perpendicular to said axis of symmetry and capable of rotating said workpiece support pedestal about said axis of symmetry. In a preferred embodiment, the reactor further includes apparatus for effecting axially symmetrical adjustments of plasma distribution, which may be either (or both) elevation apparatus for changing the location of said inner and outer portions relative to one another along said vertical axis of symmetry, or apparatus for apportioning the RF power levels applied to the inner and outer applicator portions.
摘要翻译：一种用于处理工件的等离子体反应器包括处理室，该处理室包括包括天花板并且具有大致垂直于所述天花板的对称垂直轴线的外壳，所述室内的工件支撑基座和大体上面对天花板，处理气体注入装置腔室和耦合到腔室的真空泵。反应器还包括覆盖天花板并包括径向内部施加器部分和径向外部施加器部分的等离子体源功率施加器，以及耦合到所述内部和外部施加器部分的RF电力设备，以及能够使工件支撑基座或外部施加器部分围绕垂直于所述对称轴线的径向轴线，并且能够围绕所述对称轴线旋转所述工件支撑基座。在优选实施例中，反应器还包括用于实现等离子体分布的轴对称调节的装置，其可以是（或两个）升降装置，用于沿所述垂直对称轴线相对于彼此改变所述内部和外部部分的位置，或用于分配施加到内部和外部施加器部分的RF功率电平的装置。

14. 发明申请

US20060166107A1 Method for plasma etching a chromium layer suitable for photomask fabrication 失效
标题翻译：用于等离子体蚀刻适用于光掩模制造的铬层的方法
公开(公告)号：US20060166107A1
公开(公告)日：2006-07-27
申请号：US11044341
申请日：2005-01-27
申请人： Xiaoyi Chen , Michael Grimbergen , Madhavi Chandrachood , Jeffrey Tran , Ajay Kumar , Simon Tam , Ramesh Krishnamurthy
发明人： Xiaoyi Chen , Michael Grimbergen , Madhavi Chandrachood , Jeffrey Tran , Ajay Kumar , Simon Tam , Ramesh Krishnamurthy
IPC分类号： C23F3/00 , C03C25/68 , B44C1/22 , C23F1/00 , C03C15/00 , G03F1/00
CPC分类号： C23F4/00 , G03F1/30 , G03F1/54 , G03F1/80
摘要： A method for etching a chromium layer is provided herein. In one embodiment, a method for etching a chromium layer includes providing a filmstack in an etching chamber, the filmstack having a chromium layer partially exposed through a patterned layer, providing at least one halogen containing process gas to a processing chamber, biasing the layer disposed on a substrate support in the processing chamber with a plurality of power pulses less than 600 Watts, and etching the chromium layer through a patterned mask. The method for plasma etching a chromium layer described herein is particularly suitable for fabricating photomasks.
摘要翻译：本文提供了蚀刻铬层的方法。在一个实施例中，用于蚀刻铬层的方法包括在蚀刻室中设置膜层，所述膜层具有部分地通过图案化层暴露的铬层，向处理室提供至少一种含卤素的处理气体，在处理室中的衬底支撑件上具有小于600瓦的多个功率脉冲，并且通过图案化掩模蚀刻铬层。本文所述的用于等离子体蚀刻铬层的方法特别适用于制造光掩模。

15. 发明申请

US20060154151A1 Method for quartz photomask plasma etching 有权
标题翻译：石英光掩模等离子体蚀刻方法
公开(公告)号：US20060154151A1
公开(公告)日：2006-07-13
申请号：US11031885
申请日：2005-01-08
申请人： Scott Anderson , Ajay Kumar
发明人： Scott Anderson , Ajay Kumar
IPC分类号： C03C25/68 , G03C5/00 , C23F1/00 , C03C15/00 , G03F1/00 , B44C1/22
CPC分类号： G03F1/30 , G03F1/80 , H01J37/32706 , H01J2237/334
摘要： A method for etching quartz is provided herein. In one embodiment, a method of etching quartz includes providing a filmstack in an etching chamber, the filmstack having a quartz layer partially exposed through a patterned layer, providing at least one fluorocarbon process gas to a processing chamber, biasing a quartz layer disposed on a substrate support in the processing chamber with a plurality of power pulses less than 600 Watts and etching the quartz layer through a patterned mask. The method for etching quartz described herein is particularly suitable for fabricating photomasks having etched quartz portions.
摘要翻译：本文提供了一种蚀刻石英的方法。在一个实施例中，蚀刻石英的方法包括在蚀刻室中提供薄膜堆叠，所述薄膜堆叠具有通过图案化层部分地暴露的石英层，向处理室提供至少一个碳氟化合物工艺气体，偏置设置在处理室中的衬底支撑具有小于600瓦特的多个功率脉冲，并且通过图案化掩模蚀刻石英层。本文所述的蚀刻石英的方法特别适用于制造具有蚀刻的石英部分的光掩模。

16. 发明授权

US07789918B2 Lubricity improving additive composition for low sulfur diesel fuel 有权
标题翻译：润滑改善低硫柴油燃料添加剂组成
公开(公告)号：US07789918B2
公开(公告)日：2010-09-07
申请号：US11547458
申请日：2004-08-09
申请人： Deepak Kumar Tuli , Ajay Kumar Arora , Shanti Prakash , Rajiv Ranjan , Krishan Kumar Swami , Ajay Kumar , Rakesh Sarin , Ram Prakash Verma , Niranjan Raghunath Raje
发明人： Deepak Kumar Tuli , Ajay Kumar Arora , Shanti Prakash , Rajiv Ranjan , Krishan Kumar Swami , Ajay Kumar , Rakesh Sarin , Ram Prakash Verma , Niranjan Raghunath Raje
IPC分类号： C10L1/18 , C10L1/32 , C10M169/04
CPC分类号： C10L10/08 , C10L1/18 , C10L1/1881 , C10L1/19 , C10L1/191
摘要： The present invention relates to a additive composition for use as lubricity improver for low sulphur diesel, comprising c) 0.1-10% by weight of ester derivative derived from cashew nut shell liquid (CNSL esters) of formula (I); f) 0.1-10% by weight of ester derivative derived from cashew nut shell liquid of formula (II); g) 50-95% by weight of free fatty acid of the formula RCOOH in which R represents an alkyl/alkenyl group with 12 to 24 carbon atoms. h) 1-30% by weight of synthetic esters derived by esterifying tri, tetra, penta hydric alcohols with carboxylic acids such as lauric, palmitic, linoleic, ricinoleic etc.
摘要翻译：本发明涉及一种用作低硫柴油的润滑改进剂的添加剂组合物，其包含c）0.1-10重量％衍生自式（I）的腰果壳液（CNSL酯）的酯衍生物; f）0.1-10重量％衍生自式（II）的腰果壳液的酯衍生物; g）50-95重量％的式RCOOH的游离脂肪酸，其中R表示具有12至24个碳原子的烷基/链烯基。 h）1-30重量％的通过酯化三，四，五羟基醇与羧酸如月桂酸，棕榈酸，亚油酸，蓖麻油酸等衍生的合成酯。

17. 发明申请

US20080098642A1 Lubricity Improving Additive Composition for Low Sulfur Diesel Fuel 有权
标题翻译：改善低硫柴油燃料添加剂组成的润滑性
公开(公告)号：US20080098642A1
公开(公告)日：2008-05-01
申请号：US11547458
申请日：2004-08-09
申请人： Deepak Kumar Tuli , Ajay Kumar Arora , Shanti Prakash , Rajiv Ranjan , Krishan Kumar Swami , Ajay Kumar , Rakesh Sarin , Ram Prakash Verma , Niranjan Raghunath Raje
发明人： Deepak Kumar Tuli , Ajay Kumar Arora , Shanti Prakash , Rajiv Ranjan , Krishan Kumar Swami , Ajay Kumar , Rakesh Sarin , Ram Prakash Verma , Niranjan Raghunath Raje
IPC分类号： C10L1/18
CPC分类号： C10L10/08 , C10L1/18 , C10L1/1881 , C10L1/19 , C10L1/191
摘要： The present invention relates to a additive composition for use as lubricity improver for low sulphur diesel, comprising c) 0.1-10% by weight of ester derivative derived from cashew nut shell liquid (CNSL esters) of formula (I); f) 0.1-10% by weight of ester derivative derived from cashew nut shell liquid of formula (II); g) 50-95% by weight of free fatty acid of the formula RCOOH in which R represents an alkyl/alkenyl group with 12 to 24 carbon atoms. h) 1-30% by weight of synthetic esters derived by esterifying tri, tetra, penta hydric alcohols with carboxylic acids such as lauric, palmitic, linoleic, ricinoleic etc.
摘要翻译：本发明涉及一种用作低硫柴油的润滑改进剂的添加剂组合物，其包含c）0.1-10重量％衍生自式（I）的腰果壳液（CNSL酯）的酯衍生物; f）0.1-10重量％衍生自式（II）的腰果壳液的酯衍生物; g）50-95重量％的式RCOOH的游离脂肪酸，其中R表示具有12至24个碳原子的烷基/链烯基。 h）1-30重量％的通过酯化三，四，五羟基醇与羧酸如月桂酸，棕榈酸，亚油酸，蓖麻油酸等衍生的合成酯。

18. 发明申请

US20170342086A1 Compounds and methods for the treatment of drug resistance in cancer cells against paclitaxel 审中-公开
公开(公告)号：US20170342086A1
公开(公告)日：2017-11-30
申请号：US15013616
申请日：2016-02-02
申请人： Ajay Kumar
发明人： Ajay Kumar
IPC分类号： C07D491/153 , G01N21/65 , A61K31/337 , G01N33/574 , A61K31/4741
CPC分类号： C07D491/153 , A61K31/337 , A61K31/4741 , A61K45/06 , G01N21/658 , G01N33/57496 , G01N2333/47 , G01N2333/914 , A61K2300/00
摘要： The disclosure provides compounds and methods for treating cancer by inhibiting the formation of cancer cells resistant to paclitaxel by preventing the formation of GBP1:PIM1 protein interaction during a chemotherapeutic treatment. These compounds and methods are able to treat cancer individually or in conjunction with paclitaxel.

19. 发明申请

US20160365283A1 ETCH-RESISTANT WATER SOLUBLE MASK FOR HYBRID WAFER DICING USING LASER SCRIBING AND PLASMA ETCH 有权
标题翻译：使用激光切割和等离子体蚀刻的混合波浪蚀刻防蚀水溶性掩模
公开(公告)号：US20160365283A1
公开(公告)日：2016-12-15
申请号：US14738389
申请日：2015-06-12
申请人： Wei-Sheng Lei , Mohammad Kamruzzaman Chowdhury , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , Mohammad Kamruzzaman Chowdhury , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/82 , H01L21/308 , H01J37/32 , H01L21/02 , H01L21/67 , H01L21/3065 , H01L21/268
CPC分类号： H01L21/82 , H01J37/32889 , H01J37/32899 , H01J2237/334 , H01J2237/335 , H01L21/02057 , H01L21/02076 , H01L21/3065 , H01L21/3081 , H01L21/3086 , H01L21/31105 , H01L21/31127 , H01L21/32131 , H01L21/67207 , H01L21/78
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer including a plurality of integrated circuits includes forming a water soluble mask above the semiconductor wafer, the water soluble mask covering and protecting the integrated circuits. The method also includes baking the water soluble mask to increase the etch resistance of the water soluble mask. The method also includes, subsequent to baking the water soluble mask, patterning the water soluble mask with a laser scribing process to provide a water soluble patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The method also includes plasma etching the semiconductor wafer through the gaps in the water soluble patterned mask to singulate the integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个实例中，对包括多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成水溶性掩模，所述水溶性掩模覆盖并保护集成电路。该方法还包括烘烤水溶性面罩以增加水溶性面膜的耐蚀刻性。该方法还包括在烘焙水溶性掩模之后，用激光划线工艺图案化水溶性掩模，以提供具有间隙的水溶性图案化掩模，暴露集成电路之间的半导体晶片的区域。该方法还包括通过水溶性图案化掩模中的间隙等离子体蚀刻半导体晶片以对集成电路进行分离。

20. 发明申请

US20160315009A1 UV-CURE PRE-TREATMENT OF CARRIER FILM FOR WAFER DICING USING HYBRID LASER SCRIBING AND PLASMA ETCH APPROACH 有权
标题翻译：使用混合激光扫描和等离子体蚀刻方法进行波长涂覆的载体膜的UV固化预处理
公开(公告)号：US20160315009A1
公开(公告)日：2016-10-27
申请号：US14697391
申请日：2015-04-27
申请人： Wei-Sheng Lei , Brad Eaton , Jungrae Park , Ajay Kumar , James S. Papanu , Prabhat Kumar
发明人： Wei-Sheng Lei , Brad Eaton , Jungrae Park , Ajay Kumar , James S. Papanu , Prabhat Kumar
IPC分类号： H01L21/78 , H01L21/683 , H01L21/268 , H01L21/67 , H01L21/308 , H01L21/3065
CPC分类号： H01L21/78 , H01L21/268 , H01L21/3065 , H01L21/3086 , H01L21/67069 , H01L21/67207 , H01L21/6836 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits on a front side of the semiconductor wafer includes adhering a back side the semiconductor wafer on the dicing tape of a substrate carrier. Subsequent to adhering the semiconductor wafer on a dicing tape, the dicing tape is treated with a UV-cure process. Subsequent to treating the dicing tape with the UV-cure process, a dicing mask is formed on the front side of the semiconductor wafer, the dicing mask covering and protecting the integrated circuits. The dicing mask is patterned with a laser scribing process to provide gaps in the dicing mask, the gaps exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is plasma etched through the gaps in the dicing mask layer to singulate the integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个示例中，在半导体晶片的正面上切割具有多个集成电路的半导体晶片的方法包括将半导体晶片的背面粘附在基板载体的切割带上。在将半导体晶片粘附在切割带上之后，用UV固化工艺处理切割带。在通过UV固化处理处理切割带之后，在半导体晶片的前侧形成切割掩模，该切割掩模覆盖并保护集成电路。用激光刻划工艺对切割掩模进行图案化，以在切割掩模之间提供间隙，在半导体晶片的间隙暴露在集成电路之间。通过切割掩模层中的间隙对半导体晶片进行等离子体蚀刻，以对集成电路进行分离。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式