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11. 发明申请

US20080006892A1 PHOTOELECTRIC CONVERSION DEVICE AND IMAGE PICKUP SYSTEM WITH PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换装置和具有光电转换装置的图像拾取系统
公开(公告)号：US20080006892A1
公开(公告)日：2008-01-10
申请号：US11767779
申请日：2007-06-25
申请人： Ken-Ichiro URA , Yoshihiko FUKUMOTO , Yuzo KATAOKA
发明人： Ken-Ichiro URA , Yoshihiko FUKUMOTO , Yuzo KATAOKA
IPC分类号： H01L27/14 , H04N5/335
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14612 , H01L27/1463 , H01L27/14643 , H01L27/14689
摘要： A photoelectric conversion device comprises a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type serving as a photoelectric conversion element together with a part of the first semiconductor region; a gate electrode transferring electric carriers generated in the photoelectric conversion element to a third semiconductor region of the second conductivity type. Moreover, the photoelectric conversion device comprises an isolation region for electrically isolating the second semiconductor region from a fourth semiconductor region of the second conductivity type adjacent to the second semiconductor region. Wiring for applying voltage to the gate electrode is arranged on the isolation region. Here, a fifth semiconductor region of the second conductivity type having an impurity concentration lower than that of the fourth semiconductor region is provided between the fourth semiconductor region and the isolation region.
摘要翻译：光电转换装置包括第一导电类型的第一半导体区域; 与第一半导体区域的一部分一起用作光电转换元件的第二导电类型的第二半导体区域; 将在所述光电转换元件中产生的载流子转移到所述第二导电类型的第三半导体区域的栅电极。此外，光电转换装置包括用于将第二半导体区域与邻近第二半导体区域的第二导电类型的第四半导体区域电隔离的隔离区域。用于向栅电极施加电压的布线设置在隔离区上。这里，在第四半导体区域和隔离区域之间设置具有比第四半导体区域低的杂质浓度的第二导电类型的第五半导体区域。

12. 发明授权

US06475563B2 Method for forming a thin film using a gas 失效
标题翻译：使用气体形成薄膜的方法
公开(公告)号：US06475563B2
公开(公告)日：2002-11-05
申请号：US09433565
申请日：1999-11-04
申请人： Yukihiro Hayakawa , Yasushi Kawasumi , Kenji Makino , Yuzo Kataoka
发明人： Yukihiro Hayakawa , Yasushi Kawasumi , Kenji Makino , Yuzo Kataoka
IPC分类号： C23C16455
CPC分类号： C23C16/4557 , C23C16/20 , C23C16/4481 , C23C16/4485 , C23C16/452
摘要： A method for forming a thin film on a substrate using a gas includes providing a substrate in a reaction chamber. A head for emitting a gas in the reaction chamber is disposed opposite the substrate. This step includes mounting a detachable gas liberating surface to the head so that the distance between the head and the substrate surface is 10 mm or less. Gas is then emitted from the head into the reaction chamber.
摘要翻译：使用气体在基板上形成薄膜的方法包括在反应室中设置基板。用于在反应室中排出气体的头部设置在与衬底相对的位置。该步骤包括将可拆卸的气体释放表面安装到头部上，使得头部和基底表面之间的距离为10mm或更小。然后将气体从头部排出到反应室中。

13. 发明授权

US6156657A Method of treating active material 失效
标题翻译：活性物质处理方法
公开(公告)号：US6156657A
公开(公告)日：2000-12-05
申请号：US637410
申请日：1996-04-25
申请人： Hideshi Kuwabara , Yasushi Kawasumi , Tetsuo Asaba , Kenji Makino , Yuzo Kataoka , Yasuhiro Sekine , Shigeru Nishimura
发明人： Hideshi Kuwabara , Yasushi Kawasumi , Tetsuo Asaba , Kenji Makino , Yuzo Kataoka , Yasuhiro Sekine , Shigeru Nishimura
IPC分类号： B01D53/72 , C23C16/44 , H01J37/32 , H01L21/44
CPC分类号： H01J37/3244 , B01D53/72 , C23C16/4412 , H01J37/32844 , Y02C20/30
摘要： An active substance treating method is characterized in that an active substance is caused to react with an inactivating substance in an exhaust system for a thin film forming apparatus. A thin film forming apparatus includes a common chamber having a region where plasma CVD is carried out and a region where thermal CVD is carried out, a device provided in the chamber for pressing a substrate onto a holder, a lamp for illuminating light having a component of a wavelength of 1 .mu.m or above to heat the substrate, an introducing port for separately introducing two active substances to a vicinity of the substrate, a vaporizing device in which at least two bubblers are series-connected to vaporize the active substances, and an exhaust system which is divided into two systems each of which has a heater and which has a port for introducing an inactivating substance into an exhaust pump.
摘要翻译：活性物质处理方法的特征在于使活性物质与用于薄膜形成装置的排气系统中的灭活物质反应。薄膜形成装置包括具有进行等离子体CVD的区域和进行热CVD的区域的公共室，设置在用于将基板按压到保持器上的室中的装置，用于照射具有成分波长1μm以上的加热用基板，将两个活性物质分别引入到基板附近的引入口，将至少两个起泡器串联连接以蒸发活性物质的汽化装置，以及排气系统，其被分成两个系统，每个系统具有加热器，并且具有用于将灭活物质引入排气泵的端口。

14. 发明授权

US6004885A Thin film formation on semiconductor wafer 失效
标题翻译：在半导体晶圆上形成薄膜
公开(公告)号：US6004885A
公开(公告)日：1999-12-21
申请号：US675537
申请日：1996-07-03
申请人： Yukihiro Hayakawa , Yasushi Kawasumi , Kenji Makino , Yuzo Kataoka
发明人： Yukihiro Hayakawa , Yasushi Kawasumi , Kenji Makino , Yuzo Kataoka
IPC分类号： C23C16/20 , C23C16/44 , C23C16/448 , C23C16/452 , C23C16/455 , C23C16/06
CPC分类号： C23C16/4557 , C23C16/20 , C23C16/4481 , C23C16/4485 , C23C16/452
摘要： A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reducing the pressure inside the container, and heating means for heating the liquid starting material held in the container; the liquid starting material being boiled.
摘要翻译：一种起始气体供给装置，用于从液体原料形成气态起始材料并将气态原料进料到CVD设备的反应室中; 容纳液体原料的容器，用于降低容器内的压力的减压装置，以及加热保持在容器内的液体起始材料的加热装置; 液体起始材料被煮沸。

15. 发明授权

US5686323A Method of manufacturing a semiconductor device having an out diffusion preventing film 失效
标题翻译：制造具有外扩散防止膜的半导体器件的方法
公开(公告)号：US5686323A
公开(公告)日：1997-11-11
申请号：US203591
申请日：1994-02-28
申请人： Yuzo Kataoka
发明人： Yuzo Kataoka
IPC分类号： H01L29/73 , H01L21/223 , H01L21/28 , H01L21/285 , H01L21/331 , H01L29/732 , H01L21/265 , H01L21/44
CPC分类号： H01L21/28568 , H01L29/66272
摘要： A method of manufacturing a semiconductor device comprises the steps of: forming an insulative film onto a semiconductor substrate; forming openings into said insulative film; implanting desired impurities into the semiconductor substrate through at least the openings; forming an out diffusion preventing film onto the surfaces of the semiconductor substrate exposed in at least the opening portions after the impurities have been implanted; annealing the semiconductor substrate after the out diffusion preventing film has been formed; and forming a conductive layer onto the out diffusion preventing film.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在半导体衬底上形成绝缘膜; 在所述绝缘膜中形成开口; 通过至少所述开口将期望的杂质注入所述半导体衬底; 在植入所述杂质之后，在至少所述开口部分暴露于所述半导体衬底的表面上形成扩散防止膜; 在外扩散防止膜已经形成之后退火半导体衬底; 并在导出扩散防止膜上形成导电层。

16. 发明授权

US5665630A Device separation structure and semiconductor device improved in wiring structure 失效
标题翻译：器件分离结构和半导体器件的布线结构有所改善
公开(公告)号：US5665630A
公开(公告)日：1997-09-09
申请号：US341965
申请日：1994-11-16
申请人： Keiji Ishizuka , Yuzo Kataoka , Toshihiko Ichise , Hidekazu Takahashi , Hayao Ohzu
发明人： Keiji Ishizuka , Yuzo Kataoka , Toshihiko Ichise , Hidekazu Takahashi , Hayao Ohzu
IPC分类号： H01L21/74 , H01L21/761 , H01L21/76
CPC分类号： H01L21/761 , H01L21/743 , H01L2924/0002
摘要： A semiconductor device has a device region, and a device separation region formed on a semiconductor substrate doped with impurities. And, the device separation region has a metal wiring formed on the surface of the device region or the back surface of the substrate. An aluminum region extending in the longitudinal direction connected to the metal wiring is formed within the device separation region.
摘要翻译：半导体器件具有器件区域和形成在掺杂有杂质的半导体衬底上的器件分离区域。并且，器件分离区域在器件区域的表面或衬底的背面上形成有金属布线。在器件分离区域内形成有连接于金属布线的纵向延伸的铝区域。

17. 发明授权

US5534069A Method of treating active material 失效
公开(公告)号：US5534069A
公开(公告)日：1996-07-09
申请号：US92782
申请日：1993-07-19
申请人： Hideshi Kuwabara , Yasushi Kawasumi , Tetsuo Asaba , Kenji Makino , Yuzo Kataoka , Yasuhiro Sekine , Shigeru Nishimura
发明人： Hideshi Kuwabara , Yasushi Kawasumi , Tetsuo Asaba , Kenji Makino , Yuzo Kataoka , Yasuhiro Sekine , Shigeru Nishimura
IPC分类号： B01D53/72 , C23C16/44 , H01J37/32 , C23C16/18 , C23C16/46 , C23C16/48
CPC分类号： H01J37/3244 , B01D53/72 , C23C16/4412 , H01J37/32844 , Y02C20/30
摘要： An active substance treating method is characterized in that an active substance is caused to react with an inactivating substance in an exhaust system for a thin film forming apparatus. A thin film forming apparatus includes a common chamber having a region where plasma CVD is carried out and a region where thermal CVD is carried out, a device provided in the chamber for pressing a substrate onto a holder, a lamp for illuminating light having a component of a wavelength of 1 .mu.m or above to heat the substrate, an introducing port for separately introducing two active substances to a vicinity of the substrate, a vaporizing device in which at least two bubblers are series-connected to vaporize the active substances, and an exhaust system which is divided into two systems each of which has a heater and which has a port for introducing an inactivating substance into an exhaust pump.

18. 发明授权

US5447568A Chemical vapor deposition method and apparatus making use of liquid starting material 失效
标题翻译：使用液体原料的化学气相沉积方法和设备
公开(公告)号：US5447568A
公开(公告)日：1995-09-05
申请号：US995039
申请日：1992-12-22
申请人： Yukihiro Hayakawa , Yasushi Kawasumi , Kenji Makino , Yuzo Kataoka
发明人： Yukihiro Hayakawa , Yasushi Kawasumi , Kenji Makino , Yuzo Kataoka
IPC分类号： C23C16/20 , C23C16/44 , C23C16/448 , C23C16/452 , C23C16/455 , H01L21/20
CPC分类号： C23C16/4557 , C23C16/20 , C23C16/4481 , C23C16/4485 , C23C16/452 , Y10S438/935
摘要： A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reducing the pressure inside the container, and heating means for heating the liquid starting material held in the container; the liquid starting material being boiled.
摘要翻译：一种起始气体供给装置，用于从液体原料形成气态起始材料并将气态原料进料到CVD设备的反应室中; 容纳液体原料的容器，用于降低容器内的压力的减压装置，以及加热保持在容器内的液体起始材料的加热装置; 液体起始材料被煮沸。

19. 发明申请

US20090053849A1 PHOTOELECTRIC CONVERSION DEVICE AND IMAGE PICKUP SYSTEM WITH PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换装置和具有光电转换装置的图像拾取系统
公开(公告)号：US20090053849A1
公开(公告)日：2009-02-26
申请号：US12259347
申请日：2008-10-28
申请人： Ken-ichiro Ura , Yoshihiko Fukumoto , Yuzo Kataoka
发明人： Ken-ichiro Ura , Yoshihiko Fukumoto , Yuzo Kataoka
IPC分类号： H01L31/18
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14612 , H01L27/1463 , H01L27/14643 , H01L27/14689
摘要： A photoelectric conversion device comprises a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type serving as a photoelectric conversion element together with a part of the first semiconductor region; a gate electrode transferring electric carriers generated in the photoelectric conversion element to a third semiconductor region of the second conductivity type. Moreover, the photoelectric conversion device comprises an isolation region for electrically isolating the second semiconductor region from a fourth semiconductor region of the second conductivity type adjacent to the second semiconductor region. Wiring for applying voltage to the gate electrode is arranged on the isolation region. Here, a fifth semiconductor region of the second conductivity type having an impurity concentration lower than that of the fourth semiconductor region is provided between the fourth semiconductor region and the isolation region.
摘要翻译：光电转换装置包括第一导电类型的第一半导体区域; 与第一半导体区域的一部分一起用作光电转换元件的第二导电类型的第二半导体区域; 将在所述光电转换元件中产生的载流子转移到所述第二导电类型的第三半导体区域的栅电极。此外，光电转换装置包括用于将第二半导体区域与邻近第二半导体区域的第二导电类型的第四半导体区域电隔离的隔离区域。用于向栅电极施加电压的布线设置在隔离区上。这里，在第四半导体区域和隔离区域之间设置具有比第四半导体区域低的杂质浓度的第二导电类型的第五半导体区域。

20. 发明授权

US07459760B2 Photoelectric conversion device and image pickup system with photoelectric conversion device 有权
标题翻译：光电转换装置及具有光电转换装置的摄像系统
公开(公告)号：US07459760B2
公开(公告)日：2008-12-02
申请号：US11767779
申请日：2007-06-25
申请人： Ken-ichiro Ura , Yoshihiko Fukumoto , Yuzo Kataoka
发明人： Ken-ichiro Ura , Yoshihiko Fukumoto , Yuzo Kataoka
IPC分类号： H01L29/78
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14612 , H01L27/1463 , H01L27/14643 , H01L27/14689
摘要： A photoelectric conversion device comprises a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type serving as a photoelectric conversion element together with a part of the first semiconductor region; a gate electrode transferring electric carriers generated in the photoelectric conversion element to a third semiconductor region of the second conductivity type. Moreover, the photoelectric conversion device comprises an isolation region for electrically isolating the second semiconductor region from a fourth semiconductor region of the second conductivity type adjacent to the second semiconductor region. Wiring for applying voltage to the gate electrode is arranged on the isolation region. Here, a fifth semiconductor region of the second conductivity type having an impurity concentration lower than that of the fourth semiconductor region is provided between the fourth semiconductor region and the isolation region.
摘要翻译：光电转换装置包括第一导电类型的第一半导体区域; 与第一半导体区域的一部分一起用作光电转换元件的第二导电类型的第二半导体区域; 将在所述光电转换元件中产生的载流子转移到所述第二导电类型的第三半导体区域的栅电极。此外，光电转换装置包括用于将第二半导体区域与邻近第二半导体区域的第二导电类型的第四半导体区域电隔离的隔离区域。用于向栅电极施加电压的布线设置在隔离区上。这里，在第四半导体区域和隔离区域之间设置具有比第四半导体区域低的杂质浓度的第二导电类型的第五半导体区域。

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