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11. 发明授权

US07705363B2 Light emitting device having a light extraction structure 有权
标题翻译：具有光提取结构的发光器件
公开(公告)号：US07705363B2
公开(公告)日：2010-04-27
申请号：US11934433
申请日：2007-11-02
申请人： Yong-Tae Moon
发明人： Yong-Tae Moon
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/32
摘要： A light emitting device having a vertical topology, which is capable of achieving an enhancement in light emission efficiency and reliability, and a method for manufacturing the same are disclosed. The light emitting device includes a first-conductivity-type semiconductor layer, a light emitting layer arranged over the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer arranged on the light emitting layer. The second-conductivity-type semiconductor layer includes an etch barrier layer.
摘要翻译：公开了一种能够实现发光效率和可靠性提高的垂直拓扑结构的发光器件及其制造方法。发光器件包括第一导电型半导体层，布置在第一导电型半导体层上的发光层和布置在发光层上的第二导电型半导体层。第二导电型半导体层包括蚀刻阻挡层。

12. 发明授权

US07687811B2 Vertical light emitting device having a photonic crystal structure 有权
标题翻译：具有光子晶体结构的垂直发光器件
公开(公告)号：US07687811B2
公开(公告)日：2010-03-30
申请号：US11704390
申请日：2007-02-09
申请人： Jun Ho Jang , Yong Tae Moon
发明人： Jun Ho Jang , Yong Tae Moon
IPC分类号： H01L21/00
CPC分类号： H01L33/20 , H01L2933/0083
摘要： A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of increasing light extraction efficiency, are disclosed. The method includes forming a light extraction layer on a substrate, forming a plurality of semiconductor layers on the light extraction layer, forming a first electrode on the semiconductor layers, forming a support layer on the first electrode, removing the substrate, and forming a second electrode on a surface from which the substrate is removed.
摘要翻译：公开了具有垂直结构的发光器件及其制造方法，其能够提高光提取效率。该方法包括在衬底上形成光提取层，在光提取层上形成多个半导体层，在半导体层上形成第一电极，在第一电极上形成支撑层，去除衬底，形成第二电极去除基板的表面上的电极。

13. 发明授权

US06303404B1 Method for fabricating white light emitting diode using InGaN phase separation 有权
标题翻译：使用InGaN相分离制造白色发光二极管的方法
公开(公告)号：US06303404B1
公开(公告)日：2001-10-16
申请号：US09322393
申请日：1999-05-28
申请人： Yong Tae Moon , Dong Joon Kim , Keun Man Song , Seong Ju Park
发明人： Yong Tae Moon , Dong Joon Kim , Keun Man Song , Seong Ju Park
IPC分类号： H01L2100
CPC分类号： H01L33/08 , H01L33/0095 , H01L33/32
摘要： Disclosed is a method for fabricating a white LED which comprises, as a single active layer, an InGaN thin film which enables emission of white light. The InGaN thin film is constructed by taking advantage of the spinodal decomposition of the ternary compound and rapid thermal annealing. When growing the InGaN thin film on an n-type GaN formed on a sappier substrate under a growth condition, the thin film undergoes spinodal decomposition into two phases which show photoluminescence of a wavelength range from violet to blue and from green to blue, respectively, after which the surface of the thin film is thermally stabilized by rapid thermal annealing and the photoluminescence of the In-deficient phase is improved, so as to give intensive white photoluminescence to the InGaN single active layer. The LED which recruits such a single active InGaN thin film is superb in light emission efficiency and can be fabricated in a significantly reduced process steps.
摘要翻译：公开了一种制造白光LED的方法，其包括作为单个有源层的能够发射白光的InGaN薄膜。通过利用三元化合物的旋节分解和快速热退火构成InGaN薄膜。当在生长条件下在形成在增幅器衬底上的n型GaN上生长InGaN薄膜时，薄膜经历亚稳态分解成两相，分别显示从紫色到蓝色和从绿色到蓝色的波长范围的光致发光，之后通过快速热退火热稳定薄膜表面，提高了In缺陷相的光致发光，从而为InGaN单一有源层提供强烈的白色光致发光。招募这种单一活性InGaN薄膜的LED在发光效率方面是极好的，并且可以以显着降低的工艺步骤制造。

14. 发明授权

US09337383B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US09337383B2
公开(公告)日：2016-05-10
申请号：US13404615
申请日：2012-02-24
申请人： Dae Seob Han , Yong Tae Moon , Jong-In Shim
发明人： Dae Seob Han , Yong Tae Moon , Jong-In Shim
IPC分类号： H01L33/06 , H01L33/04 , H01L33/32
CPC分类号： H01L33/06 , F21K9/23 , F21V29/507 , F21V29/83 , F21Y2115/10 , H01L33/04 , H01L33/32 , H01L2224/48091 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： Disclosed is a light emitting device including a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising quantum well layers and quantum barrier layers, wherein each of the quantum well barrier layers comprises first barrier layers and a second barrier layer disposed between the first barrier layers, and an energy bandgaps of the second barrier layer is larger than energy bandgaps of the quantum well layers and smaller than energy bandgaps of the first barrier layers.
摘要翻译：公开了一种包括第一导电类型半导体层的发光器件; 设置在所述第一导电型半导体层上的第二导电型半导体层; 以及设置在所述第一导电类型半导体层和所述第二导电类型半导体层之间的有源层，所述有源层包括量子阱层和量子势垒层，其中每个所述量子阱势垒层包括第一势垒层和设置在所述第二势垒层并且所述第二阻挡层的能量带隙大于所述量子阱层的能量带隙，并且小于所述第一阻挡层的能量带隙。

15. 发明授权

US09178108B2 Light emitting device and light emitting device package 有权
标题翻译：发光器件和发光器件封装
公开(公告)号：US09178108B2
公开(公告)日：2015-11-03
申请号：US12979012
申请日：2010-12-27
申请人： Yong Tae Moon , Jeong Sik Lee , Joong Seo Park , Ho Ki Kwon , Seoung Hwan Park
发明人： Yong Tae Moon , Jeong Sik Lee , Joong Seo Park , Ho Ki Kwon , Seoung Hwan Park
IPC分类号： H01L33/06 , B82Y20/00 , H01L33/38 , H01L33/12
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/12 , H01L33/382
摘要： The embodiment relates to a light emitting device and a light emitting device package, wherein the light emitting device includes a first conduction type semiconductor layer, an active layer formed on the first conduction type semiconductor layer, and a second conduction type semiconductor layer formed on the active layer, wherein the active layer includes a quantum well layer and a quantum barrier layer, and a face direction lattice constant of the first conduction type semiconductor layer or the second conduction type semiconductor layer is greater than the face direction lattice constant of the quantum barrier layer and smaller than the face direction lattice constant of the quantum well layer.
摘要翻译：该实施例涉及发光器件和发光器件封装，其中发光器件包括第一导电类型半导体层，形成在第一导电类型半导体层上的有源层和形成在第一导电型半导体层上的第二导电类型半导体层活性层，其中所述有源层包括量子阱层和量子势垒层，并且所述第一导电类型半导体层或所述第二导电类型半导体层的面向晶格常数大于所述量子势垒的面向晶格常数并且小于量子阱层的面向晶格常数。

16. 发明授权

US08779425B2 Light emitting device, light emitting device package, and lighting system including the same 有权
标题翻译：发光器件，发光器件封装以及包括其的照明系统
公开(公告)号：US08779425B2
公开(公告)日：2014-07-15
申请号：US13850344
申请日：2013-03-26
申请人： Yong Tae Moon , Jeong Sik Lee , Dae Seob Han
发明人： Yong Tae Moon , Jeong Sik Lee , Dae Seob Han
IPC分类号： H01L29/04 , H01L21/00
CPC分类号： H01L33/04 , H01L33/06 , H01L33/08 , H01L2224/48091 , H01L2924/00014
摘要： A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers.
摘要翻译：提供发光器件，发光器件封装和照明系统。发光器件包括第一导电类型半导体层，第二导电类型半导体层和在第一和第二导电类型半导体层之间的有源层。有源层包括与第二导电类型半导体层相邻的第一有源层，与第一导电类型半导体层相邻的第二有源层和在第一和第二有源层之间的栅极量子势垒。

17. 发明申请

US20120115267A1 METHOD FOR FABRICATING LIGHT EMITTING DEVICE 有权
标题翻译：制造发光装置的方法
公开(公告)号：US20120115267A1
公开(公告)日：2012-05-10
申请号：US13349387
申请日：2012-01-12
申请人： Yong Tae Moon
发明人： Yong Tae Moon
IPC分类号： H01L33/32
CPC分类号： H01L33/32 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02502 , H01L21/02538 , H01L21/0254 , H01L33/007 , H01L33/12 , H01L33/44 , H01L2224/48091 , H01L2924/00014
摘要： Disclosed is a method for fabricating a light emitting device. The method includes forming an oxide including gallium aluminum over a gallium oxide substrate, forming a nitride including gallium aluminum over the oxide including gallium aluminum and forming a light emitting structure over the nitride including gallium aluminum.
摘要翻译：公开了一种制造发光器件的方法。该方法包括在氧化镓衬底上形成包括镓铝的氧化物，在包括镓铝的氧化物上形成包括镓铝的氮化物，并在包括镓铝的氮化物上形成发光结构。

18. 发明申请

US20120104356A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20120104356A1
公开(公告)日：2012-05-03
申请号：US13344814
申请日：2012-01-06
申请人： Dae Seob HAN , Yong Tae MOON , Ha Jong BONG
发明人： Dae Seob HAN , Yong Tae MOON , Ha Jong BONG
IPC分类号： H01L33/04
CPC分类号： H01L33/06
摘要： Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure having a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers. The active layer includes a plurality of well layers and barrier layers. An outermost barrier layer of the barrier layers includes a plurality of first layers; and a plurality of second layers.
摘要翻译：公开了一种半导体发光器件。半导体发光器件包括在第一和第二导电半导体层之间具有第一导电半导体层，第二导电半导体层和有源层的发光结构。有源层包括多个阱层和阻挡层。阻挡层的最外层的阻挡层包括多个第一层; 和多个第二层。

19. 发明申请

US20120043526A1 LIGHT EMITTING DEVICE AND LIGHTING SYSTEM HAVING THE SAME 有权
标题翻译：发光装置和具有该发光装置的照明系统
公开(公告)号：US20120043526A1
公开(公告)日：2012-02-23
申请号：US13288193
申请日：2011-11-03
申请人： Yong Tae MOON , Dae Seob Han , Jeong Sik Lee
发明人： Yong Tae MOON , Dae Seob Han , Jeong Sik Lee
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L33/04 , H01L33/12 , H01L33/32
摘要： Disclosed are a light emitting device and a lighting system having the same. The light emitting device includes a first conductivity-type semiconductor layer, an interfacial layer including at least two superlattice structures adjacent to the first conductivity-type semiconductor layer, an active layer adjacent to the interfacial layer, and a second conductivity-type semiconductor layer adjacent to the active layer. The first conductivity-type semiconductor layer, interfacial layer, active layer, and second conductivity-type semiconductor layer are stacked in a same direction, the first and second semiconductor layer are of different conductivity types, an energy band gap of the superlattice structure adjacent to the active layer is smaller than an energy band gap of the superlattice structure adjacent to the first conductivity-type semiconductor layer.
摘要翻译：公开了一种发光器件和具有该发光器件的照明系统。发光器件包括第一导电型半导体层，包括与第一导电类型半导体层相邻的至少两个超晶格结构的界面层，与界面层相邻的有源层和与界面层相邻的第二导电型半导体层到活动层。第一导电型半导体层，界面层，有源层和第二导电型半导体层以相同的方向堆叠，第一和第二半导体层具有不同的导电类型，超晶格结构的能带隙相邻有源层小于与第一导电型半导体层相邻的超晶格结构的能带隙。

20. 发明授权

US08039362B2 Method for fabricating light emitting device 有权
标题翻译：制造发光器件的方法
公开(公告)号：US08039362B2
公开(公告)日：2011-10-18
申请号：US12712584
申请日：2010-02-25
申请人： Yong Tae Moon
发明人： Yong Tae Moon
IPC分类号： H01L21/30
CPC分类号： H01L33/0079 , H01L21/0237 , H01L21/02483 , H01L21/02538 , H01L21/0254 , H01L21/02614 , H01L33/007
摘要： Provided is a method for fabricating a light emitting device. The method comprises forming a gallium oxide layer, forming a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the gallium oxide layer, forming a conductive substrate on the second conductive type semiconductor layer, separating the gallium oxide layer, and forming a first electrode on the first conductive type semiconductor layer.
摘要翻译：提供一种制造发光器件的方法。该方法包括在氧化镓层上形成氧化镓层，形成第一导电型半导体层，有源层和第二导电类型半导体层，在第二导电型半导体层上形成导电衬底，将氧化镓并且在第一导电类型半导体层上形成第一电极。

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