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11. 发明授权

US08518170B2 Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks 失效
标题翻译：含硼的油墨，用于使用非接触印刷方法在半导体基板中形成硼掺杂区域以及制造这种含硼油墨的方法
公开(公告)号：US08518170B2
公开(公告)日：2013-08-27
申请号：US12344745
申请日：2008-12-29
申请人： Roger Yu-Kwan Leung , De-Ling Zhou , Wenya Fan
发明人： Roger Yu-Kwan Leung , De-Ling Zhou , Wenya Fan
IPC分类号： C09D11/02
CPC分类号： C09D11/30 , C08G77/20 , C08G77/46 , C09D11/38 , C09D11/52 , H01L21/2225
摘要： Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks are provided. A boron-comprising ink comprises boron from or of a boron-comprising material and a spread-minimizing additive that results in a spreading factor of the boron-comprising ink in a range of from about 1.5 to about 6. The boron-comprising ink has a viscosity in a range of from about 1.5 to about 50 centipoise and, when deposited on a semiconductor substrate, provides a post-anneal sheet resistance in a range of from about 10 to about 100 ohms/square, a post-anneal doping depth in a range of from about 0.1 to about 1 μm, and a boron concentration in a range of from about 1×1019 to 1×1020 atoms/cm3.
摘要翻译：提供了用于使用非接触印刷方法在半导体衬底中形成硼掺杂区域的含硼油墨以及用于制造这种含硼油墨的方法。含硼油墨包括来自含硼材料的硼或扩散最小化添加剂，其导致含硼油墨在约1.5至约6的范围内的铺展因子。含硼油墨具有粘度在约1.5至约50厘泊的范围内，并且当沉积在半导体衬底上时，提供在约10至约100欧姆/平方的范围内的退火后电阻值，后退火掺杂深度约0.1〜1μm的范围，硼浓度为1×1019〜1×1020原子/ cm3左右。

12. 发明授权

US08324089B2 Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions 有权
标题翻译：用于在半导体衬底中形成掺杂区的组合物，用于制备这种组合物的方法，以及使用这种组合物形成掺杂区的方法
公开(公告)号：US08324089B2
公开(公告)日：2012-12-04
申请号：US12839924
申请日：2010-07-20
申请人： Roger Yu-Kwan Leung , Wenya Fan , Jan Nedbal
发明人： Roger Yu-Kwan Leung , Wenya Fan , Jan Nedbal
IPC分类号： H01L21/385
CPC分类号： H01L21/2255 , H01L21/2225
摘要： Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions are provided. In one embodiment, a dopant-comprising composition comprises a conductivity-determining type impurity dopant, a silicate carrier, a solvent, and a moisture adsorption-minimizing component. In another embodiment, a dopant-comprising composition comprises a conductivity-determining type impurity dopant, a silicate carrier, a solvent, and a high boiling point material selected from the group consisting of glycol ethers, alcohols, and combinations thereof. The high boiling point material has a boiling point of at least about 150° C.
摘要翻译：提供了用于在半导体衬底中形成掺杂区的组合物，用于制备这种组合物的方法，以及使用这种组合物形成掺杂区的方法。在一个实施方案中，包含掺杂剂的组合物包含电导率确定型杂质掺杂剂，硅酸盐载体，溶剂和水分吸附最小化组分。在另一个实施方案中，含掺杂剂的组合物包含导电性确定型杂质掺杂剂，硅酸盐载体，溶剂和选自二醇醚，醇及其组合的高沸点材料。高沸点材料的沸点至少为约150℃

13. 发明授权

US07951696B2 Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes 失效
标题翻译：使用非接触印刷方法同时形成N型和P型掺杂区的方法
公开(公告)号：US07951696B2
公开(公告)日：2011-05-31
申请号：US12241396
申请日：2008-09-30
申请人： Roger Yu-Kwan Leung , Anil Bhanap , Zhe Ding , Nicole Rutherford , Wenya Fan
发明人： Roger Yu-Kwan Leung , Anil Bhanap , Zhe Ding , Nicole Rutherford , Wenya Fan
IPC分类号： H01L21/22
CPC分类号： H01L21/228 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Methods for simultaneously forming doped regions of opposite conductivity using non-contact printing processes are provided. In one exemplary embodiment, a method comprises the steps of depositing a first liquid dopant comprising first conductivity-determining type dopant elements overlying a first region of a semiconductor material and depositing a second liquid dopant comprising second conductivity-determining type dopant elements overlying a second region of the semiconductor material. The first conductivity-determining type dopant elements and the second conductivity-determining type dopant elements are of opposite conductivity. At least a portion of the first conductivity-determining type dopant elements and at least a portion of the second conductivity-determining type dopant elements are simultaneously diffused into the first region and into the second region, respectively.
摘要翻译：提供了使用非接触印刷方法同时形成具有相反导电性的掺杂区域的方法。在一个示例性实施例中，一种方法包括以下步骤：沉积第一液体掺杂剂，该第一液体掺杂剂包括覆盖在半导体材料的第一区域上的第一导电率确定型掺杂元素，并沉积包含第二区域的第二导电率确定型掺杂元素的第二液体掺杂剂的半导体材料。第一导电率确定型掺杂元素和第二导电率确定型掺杂元素具有相反的导电性。第一导电率确定型掺杂剂元素的至少一部分和第二导电率确定型掺杂元素的至少一部分分别同时扩散到第一区域和第二区域中。

14. 发明授权

US07915181B2 Repair and restoration of damaged dielectric materials and films 有权
标题翻译：损坏的介质材料和薄膜的修复和修复
公开(公告)号：US07915181B2
公开(公告)日：2011-03-29
申请号：US10543347
申请日：2004-01-26
申请人： Wenya Fan , Victor Lu , Michael Thomas , Brian Daniels , Tiffany Nguyen , De-Ling Zhou , Ananth Naman , Lei Jin , Anil Bhanap
发明人： Wenya Fan , Victor Lu , Michael Thomas , Brian Daniels , Tiffany Nguyen , De-Ling Zhou , Ananth Naman , Lei Jin , Anil Bhanap
IPC分类号： H01L21/31
CPC分类号： H01L21/31058 , H01L21/3105 , H01L21/76801 , H01L2924/0002 , H01L2924/00
摘要： Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.
摘要翻译：本文描述了修复材料中空隙的方法，其包括：a）提供具有多个反应性硅烷醇基团的材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。还描述了材料中碳修复的方法，其包括：a）提供具有多个反应性硅烷醇基团的缺碳材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。此外，本文描述了用于减少膜和/或碳缺乏膜的冷凝的方法，其包括：a）提供具有多个反应性硅烷醇基团的膜; b）将膜放入等离子体室中; c）将多个含反应性有机部分的硅烷引入所述室中; 和d）允许硅烷与至少一些反应性硅烷醇基团反应。介质材料和低k介电材料在本文中描述，其包括：a）具有多个硅原子的无机材料; 和b）多个含有机部分的硅烷化合物，其中硅烷化合物通过至少一些硅原子与无机材料偶联。

15. 发明申请

US20110021012A1 COMPOSITIONS FOR FORMING DOPED REGIONS IN SEMICONDUCTOR SUBSTRATES, METHODS FOR FABRICATING SUCH COMPOSITIONS, AND METHODS FOR FORMING DOPED REGIONS USING SUCH COMPOSITIONS 有权
标题翻译：用于在半导体衬底中形成掺杂区域的组合物，用于制备这种组合物的方法，以及使用这些组合物形成掺杂区域的方法
公开(公告)号：US20110021012A1
公开(公告)日：2011-01-27
申请号：US12839924
申请日：2010-07-20
申请人： Roger Yu-Kwan Leung , Wenya Fan , Jan Nedbal , Lea M. Dankers
发明人： Roger Yu-Kwan Leung , Wenya Fan , Jan Nedbal , Lea M. Dankers
IPC分类号： H01L21/228 , H01B1/04
CPC分类号： H01L21/2255 , H01L21/2225
摘要： Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions are provided. In one embodiment, a dopant-comprising composition comprises a conductivity-determining type impurity dopant, a silicate carrier, a solvent, and a moisture adsorption-minimizing component. In another embodiment, a dopant-comprising composition comprises a conductivity-determining type impurity dopant, a silicate carrier, a solvent, and a high boiling point material selected from the group consisting of glycol ethers, alcohols, and combinations thereof. The high boiling point material has a boiling point of at least about 150° C.
摘要翻译：提供了用于在半导体衬底中形成掺杂区的组合物，用于制备这种组合物的方法，以及使用这种组合物形成掺杂区的方法。在一个实施方案中，包含掺杂剂的组合物包含电导率确定型杂质掺杂剂，硅酸盐载体，溶剂和水分吸附最小化组分。在另一个实施方案中，含掺杂剂的组合物包含导电性确定型杂质掺杂剂，硅酸盐载体，溶剂和选自二醇醚，醇及其组合的高沸点材料。高沸点材料的沸点至少为约150℃

16. 发明申请

US20100081264A1 METHODS FOR SIMULTANEOUSLY FORMING N-TYPE AND P-TYPE DOPED REGIONS USING NON-CONTACT PRINTING PROCESSES 失效
标题翻译：使用非接触式印刷工艺同时形成N型和P型掺杂区域的方法
公开(公告)号：US20100081264A1
公开(公告)日：2010-04-01
申请号：US12241396
申请日：2008-09-30
申请人： Roger Yu-Kwan Leung , Anil Bhanap , Zhe Ding , Nicole Rutherford , Wenya Fan
发明人： Roger Yu-Kwan Leung , Anil Bhanap , Zhe Ding , Nicole Rutherford , Wenya Fan
IPC分类号： H01L21/22
CPC分类号： H01L21/228 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Methods for simultaneously forming doped regions of opposite conductivity using non-contact printing processes are provided. In one exemplary embodiment, a method comprises the steps of depositing a first liquid dopant comprising first conductivity-determining type dopant elements overlying a first region of a semiconductor material and depositing a second liquid dopant comprising second conductivity-determining type dopant elements overlying a second region of the semiconductor material. The first conductivity-determining type dopant elements and the second conductivity-determining type dopant elements are of opposite conductivity. At least a portion of the first conductivity-determining type dopant elements and at least a portion of the second conductivity-determining type dopant elements are simultaneously diffused into the first region and into the second region, respectively.
摘要翻译：提供了使用非接触印刷方法同时形成具有相反导电性的掺杂区域的方法。在一个示例性实施例中，一种方法包括以下步骤：沉积第一液体掺杂剂，该第一液体掺杂剂包括覆盖在半导体材料的第一区域上的第一导电率确定型掺杂元素，并且沉积包含第二区域的第二导电性确定型掺杂元素的第二液体掺杂剂的半导体材料。第一导电率确定型掺杂元素和第二导电率确定型掺杂元素具有相反的导电性。第一导电率确定型掺杂剂元素的至少一部分和第二导电率确定型掺杂元素的至少一部分分别同时扩散到第一区域和第二区域中。

17. 发明申请

US20060051929A1 Electrical properties of shallow trench isolation materials via high temperature annealing in the presence of reactive gases 审中-公开
标题翻译：浅沟槽隔离材料的电性能在反应气体存在下通过高温退火
公开(公告)号：US20060051929A1
公开(公告)日：2006-03-09
申请号：US10934068
申请日：2004-09-03
申请人： Lei Jin , Victor Lu , Wenya Fan , Paul Apen
发明人： Lei Jin , Victor Lu , Wenya Fan , Paul Apen
IPC分类号： H01L21/76
CPC分类号： H01L21/02129 , H01L21/0212 , H01L21/02164 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/3121 , H01L21/316 , H01L21/76224
摘要： The present invention relates to semiconductor device fabrication and more specifically to a method and material for forming high density shallow trench isolation structures in integrated circuits having improved electrical properties. A silica dielectric film is formed on a substrate (a) preparing a composition comprising a silicon containing pre-polymer, a metal-ion-free catalyst, and optionally water; (b) coating a substrate with the composition to form a film, (c) crosslinking the composition by first heating the composition in a nitrogen atmosphere at a temperature of from about 750° C. to about 850° C. for from about 30 minutes to about 120 minutes; and thereafter heating the composition in an oxygen atmosphere at a temperature of from about 850° C. to about 1000° C. for from about 30 minutes to about 120 minutes, effective to produce a substantially crack-free, and substantially void-free silica dielectric film having a density of from about 1.8 to about 2.3 g/ml, a dielectric constant of about 4.0 or less, a breakdown voltage of about 3 MV/cm or more.
摘要翻译：本发明涉及半导体器件制造，更具体地涉及在具有改进的电性能的集成电路中形成高密度浅沟槽隔离结构的方法和材料。在基材（a）上形成二氧化硅电介质膜，制备包含含硅预聚物，不含金属离子的催化剂和任选的水的组合物; （b）用组合物涂覆基材以形成膜，（c）通过在氮气气氛中在约750℃至约850℃的温度下首先加热该组合物约30分钟来交联该组合物至约120分钟; 然后在氧气氛中在约850℃至约1000℃的温度下加热组合物约30分钟至约120分钟，有效地产生基本上无裂纹且基本上无空隙的二氧化硅绝缘膜的密度为约1.8至约2.3g / ml，介电常数为约4.0或更小，击穿电压为约3MV / cm以上。

18. 发明授权

US06214746B1 Nanoporous material fabricated using a dissolvable reagent 失效
标题翻译：使用可溶解试剂制造的纳米多孔材料
公开(公告)号：US06214746B1
公开(公告)日：2001-04-10
申请号：US09420611
申请日：1999-10-18
申请人： Roger Leung , Wenya Fan , John Silkonia , Hui-Jung Wu
发明人： Roger Leung , Wenya Fan , John Silkonia , Hui-Jung Wu
IPC分类号： H01L2131
CPC分类号： H01B3/30
摘要： Nanoporous low dielectric constant materials are fabricated from a first reagent and a second reagent. The reagents are mixed to give a reagent mixture and a polymeric structure is formed from the reagent mixture. Nanosized voids are created by removing at least in part the second reagent from the polymeric structure by a method other than thermolysis, and other than evaporation.
摘要翻译：纳米多孔低介电常数材料由第一试剂和第二试剂制成。将试剂混合以得到试剂混合物，并由试剂混合物形成聚合物结构。通过除了热分解之外的方法，除了蒸发之外，至少部分地从聚合物结构中除去第二试剂来产生纳米化的空隙。

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