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11. 发明申请

US20050014303A1 Method for manufacturing semiconductor light-emitting device 审中-公开
标题翻译：半导体发光元件的制造方法
公开(公告)号：US20050014303A1
公开(公告)日：2005-01-20
申请号：US10788378
申请日：2004-03-01
申请人： Tzong-Liang Tsai , Chih-Sung Chang , Tzer-Perng Chen
发明人： Tzong-Liang Tsai , Chih-Sung Chang , Tzer-Perng Chen
IPC分类号： H01L33/22 , H01L33/24 , H01L33/38 , H01L21/00
CPC分类号： H01L33/24 , H01L33/22
摘要： A method for manufacturing a semiconductor light-emitting device. The semiconductor light-emitting device has a substrate, and a semiconductor layer, a n-type semiconductor layer, and a p-type semiconductor layer successively formed atop the substrate. The method forms an intermediate layer having a predetermined pattern between the substrate and the semiconductor layer, or between the semiconductor layer and the n-type semiconductor layer, or between the n-type semiconductor layer and the p-type semiconductor layer. The p-type semiconductor layer has an uneven top layer due to the intermediate layer having a predetermined pattern and the total internal reflection of the LED can be reduced. The intermediate layer is a conductive material to reduce serial resistance of the LED.
摘要翻译：一种半导体发光器件的制造方法。半导体发光器件具有在衬底上依次形成的衬底和半导体层，n型半导体层和p型半导体层。该方法在衬底和半导体层之间，或者在半导体层和n型半导体层之间或在n型半导体层和p型半导体层之间形成具有预定图案的中间层。由于具有预定图案的中间层，p型半导体层具有不均匀的顶层，并且可以减少LED的全内反射。中间层是降低LED串联电阻的导电材料。

12. 发明授权

US06462357B1 Epitaxial growth of nitride compound semiconductor 有权
标题翻译：氮化物半导体的外延生长
公开(公告)号：US06462357B1
公开(公告)日：2002-10-08
申请号：US09750351
申请日：2000-12-29
申请人： Tzong-Liang Tsai , Chih-Sung Chang
发明人： Tzong-Liang Tsai , Chih-Sung Chang
IPC分类号： H01L3300
CPC分类号： H01L33/0075 , H01L21/0237 , H01L21/02439 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L33/007
摘要： The present invention provides materials and structures to reduce dislocation density when growing a III-nitride compound semiconductor. A II-nitride compound single crystal-island layer is included in the semiconductor structure, and III-nitride compound semiconductor layers are to grow thereon. It reduces the dislocation density resulted from the difference between the lattice constants of the GaN compound semiconductor layers and the substrate. It also improves the crystallization property of the III-nitride compound semiconductor.
摘要翻译：本发明提供了当生长III族氮化物化合物半导体时减少位错密度的材料和结构。半导体结构中包含II族氮化物化合物单晶 - 岛层，并且在其上生长III族氮化物化合物半导体层。它降低了由GaN化合物半导体层和衬底的晶格常数之间的差异引起的位错密度。它还改善了III族氮化物半导体的结晶性能。

13. 发明授权

US08659045B2 Light emitting device and methods for forming the same 有权
标题翻译：发光装置及其形成方法
公开(公告)号：US08659045B2
公开(公告)日：2014-02-25
申请号：US11848458
申请日：2007-08-31
申请人： Tzong-Liang Tsai , Yu-Chu Li , Chiung-Chi Tsai
发明人： Tzong-Liang Tsai , Yu-Chu Li , Chiung-Chi Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L33/14 , H01L33/22 , H01L33/32 , H01L33/42 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a light emitting device, which includes a transparent substrate, an epitaxial stack structure having a first portion and a second portion on the transparent substrate, a II/V group compound contact layer on the first portion of the epitaxial stack structure, a nitride-crystallized layer on the II/V group compound contact layer, a transparent conductive layer covering the nitride-crystallized layer, a first electrode on a portion of the transparent conductive layer, and a second electrode on the second portion of the epitaxial stack structure and structurally separated from the structure on the first portion of the epitaxial stack structure. The nitride-crystallized layer may help increase the external quantum efficiency of the light emitting device, thereby the light emitting efficiency of the light emitting device may also be improved.
摘要翻译：本发明提供了一种发光器件，其包括透明衬底，在透明衬底上具有第一部分和第二部分的外延堆叠结构，在外延堆叠结构的第一部分上的II / V族化合物接触层， II / V族化合物接触层上的氮化物结晶层，覆盖氮化物结晶层的透明导电层，透明导电层的一部分上的第一电极和外延层的第二部分上的第二电极结构和结构上与外延堆叠结构的第一部分上的结构分离。氮化物结晶层可以有助于增加发光器件的外部量子效率，从而也可以提高发光器件的发光效率。

14. 发明授权

US08288181B2 Light emitting diode and fabricating method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US08288181B2
公开(公告)日：2012-10-16
申请号：US12833648
申请日：2010-07-09
申请人： Tzong-Liang Tsai , Way-Jze Wen , Chang-Han Chiang , Chih-Sung Chang
发明人： Tzong-Liang Tsai , Way-Jze Wen , Chang-Han Chiang , Chih-Sung Chang
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/44
摘要： A light emitting diode and its fabricating method are disclosed. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An adhesive layer is utilized to adhere a conductive substrate and the light emitting diode epitaxy structure. Next, the substrate is removed.
摘要翻译：公开了一种发光二极管及其制造方法。在衬底上形成发光二极管外延结构，然后蚀刻发光二极管外延结构以形成凹陷。然后用透明电介质材料填充凹部。粘合层用于粘附导电衬底和发光二极管外延结构。接下来，去除衬底。

15. 发明授权

US07737453B2 Light emitting diode structure 有权
标题翻译：发光二极管结构
公开(公告)号：US07737453B2
公开(公告)日：2010-06-15
申请号：US11744226
申请日：2007-05-04
申请人： Tzong-Liang Tsai , Chi-Shen Lee , Ting-Kai Huang
发明人： Tzong-Liang Tsai , Chi-Shen Lee , Ting-Kai Huang
IPC分类号： H01L29/205
CPC分类号： H01L33/14 , H01L29/2003 , H01L33/02 , H01L33/32
摘要： Disclosed is a light emitting diode structure including a Constructive Oxide Contact Structure contact layer. The light emitting diode structure comprises a substrate, a buffer layer formed on the substrate, a lower confinement layer formed on the buffer layer, a light emitting layer formed on the lower confinement layer, an upper confinement layer formed on the light emitting layer, a Constructive Oxide Contact Structure contact layer formed on the upper confinement layer whose conducting type can be P-type, N-type, or I-type, a first electrode, and a second electrode (transparent electrode). The transparent electrode is formed on the Constructive Oxide Contact Structure contact layer as an anode of the light emitting diode. The first electrode is formed on the lower confinement layer and is spaced apart from the light emitting layer, the upper confinement layer, the contact layer, and the transparent electrode. The first electrode is used as a cathode of the light emitting diode.
摘要翻译：公开了包括构造氧化物接触结构接触层的发光二极管结构。发光二极管结构包括衬底，形成在衬底上的缓冲层，形成在缓冲层上的下限制层，形成在下限制层上的发光层，形成在发光层上的上约束层，形成在导电型可以是P型，N型或I型的上部限制层上的构造性氧化物接触结构接触层，第一电极和第二电极（透明电极）。透明电极形成在作为发光二极管的阳极的构造氧化物接触结构接触层上。第一电极形成在下限制层上并与发光层，上约束层，接触层和透明电极间隔开。第一电极用作发光二极管的阴极。

16. 发明申请

US20100101496A1 WAFER CARRIER AND EPITAXY MACHINE USING THE SAME 审中-公开
标题翻译：使用它的波浪载体和外延机
公开(公告)号：US20100101496A1
公开(公告)日：2010-04-29
申请号：US12648849
申请日：2009-12-29
申请人： CHIH CHING CHENG , TZONG-LIANG TSAI
发明人： CHIH CHING CHENG , TZONG-LIANG TSAI
IPC分类号： C23C16/00
CPC分类号： C23C16/4585 , C30B25/12
摘要： A wafer carrier comprises a base and a shielding plate positioned on the top surface of the base in a disassembled manner. The top surface of the base is configured to retain a plurality of wafers, and the shielding plate has a plurality of openings exposing the wafers. In particular, the shielding plate shields one portion of the base other than the other portions occupied by the wafers to prevent the reaction gases from conducting the chemical reaction to generate the reactant directly on the surface of the base. Consequently, the base is isolated from the chemical reaction, and it is not necessary to replace the base before conducting the next fabrication process or to clean the reactants on the surface of the base by thermal baking or etching.
摘要翻译：晶片载体包括基部和屏蔽板，其以拆卸的方式定位在基部的顶表面上。基座的顶表面构造成保持多个晶片，并且屏蔽板具有暴露晶片的多个开口。特别地，屏蔽板屏蔽除了晶片占据的其它部分之外的基底的一部分，以防止反应气体进行化学反应，直接在基底的表面上产生反应物。因此，基底与化学反应隔离，在进行下一个制造工艺之前不需要更换基底，也不需要通过热烘烤或蚀刻来清洁基底表面上的反应物。

17. 发明授权

US07652302B2 Method of making light emitting diode 有权
标题翻译：制造发光二极管的方法
公开(公告)号：US07652302B2
公开(公告)日：2010-01-26
申请号：US11108966
申请日：2005-04-19
申请人： Tzong-Liang Tsai , Way-Jze Wen , Chang-Han Chiang , Chih-Sung Chang
发明人： Tzong-Liang Tsai , Way-Jze Wen , Chang-Han Chiang , Chih-Sung Chang
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/38 , H01L33/44 , H01L2933/0016
摘要： A light emitting diode and the method of the same are provided. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An ohmic contact layer and a reflective layer are formed sequentially, and then are etched to expose the transparent dielectric material. Finally, forming an adhesive conductive complex layer to fix the ohmic contact layer and the reflective layer on the light emitting diode epitaxy structure.
摘要翻译：提供一种发光二极管及其制造方法。在衬底上形成发光二极管外延结构，然后蚀刻发光二极管外延结构以形成凹陷。然后用透明电介质材料填充凹部。依次形成欧姆接触层和反射层，然后进行蚀刻以露出透明电介质材料。最后，形成粘合导电复合层以将欧姆接触层和反射层固定在发光二极管外延结构上。

18. 发明授权

US07498185B2 Light emitting diode and method making the same 有权
标题翻译：发光二极管及方法制作相同
公开(公告)号：US07498185B2
公开(公告)日：2009-03-03
申请号：US12031508
申请日：2008-02-14
申请人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
发明人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
IPC分类号： H01L21/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/40 , H01L33/42
摘要： A light emitting diode and the method of the same are provided. The light emitting diode includes a light emitting structure and a metal reflective layer. The light emitting structure includes two semiconductor layers and an active layer. Oxide elements are added into the metal reflective layer to improve the adhesion between the reflective layer and the light emitting structure. Additionally, a transparent contact layer can be formed between the light emitting structure and the reflective layer in order to enhance the luminance efficiency.
摘要翻译：提供一种发光二极管及其制造方法。发光二极管包括发光结构和金属反射层。发光结构包括两个半导体层和有源层。将氧化物元素添加到金属反射层中以改善反射层和发光结构之间的粘附性。此外，为了提高发光效率，可以在发光结构和反射层之间形成透明接触层。

19. 发明申请

US20090008626A1 Optoelectronic device 审中-公开
标题翻译：光电器件
公开(公告)号：US20090008626A1
公开(公告)日：2009-01-08
申请号：US12000610
申请日：2007-12-14
申请人： Tzong-Liang Tsai , Yu-Chu Li
发明人： Tzong-Liang Tsai , Yu-Chu Li
IPC分类号： H01L29/06 , H01L33/00
CPC分类号： H01L33/24 , H01L33/007 , H01L33/02 , H01L33/26
摘要： The present invention provides an optoelectronic device which includes a first electrode, a substrate on the first electrode; a buffer layer on the substrate, in which the buffer layer includes a first gallium nitride based compound layer on the substrate, a second gallium nitride based compound layer, and a II-V group compound layer between the first gallium nitride based compound layer and the second gallium nitride based compound layer; a first semiconductor conductive layer on the buffer layer; an active layer on the first semiconductor conductive layer, in which the active layer is an uneven Multi-Quantum Well; a semiconductor conductive layer on the active layer; a transparent layer on the second semiconductor conductive layer; and a second electrode on the transparent layer.
摘要翻译：本发明提供一种光电器件，其包括第一电极，第一电极上的衬底; 所述衬底上的缓冲层，其中所述缓冲层在所述衬底上包括第一氮化镓基化合物层，所述第二氮化镓基化合物层和所述第一氮化镓基化合物层和所述第一氮化镓基化合物层之间的II-V族化合物层第二氮化镓基化合物层; 在缓冲层上的第一半导体导电层; 在第一半导体导电层上的有源层，其中有源层是不均匀的多量子阱; 有源层上的半导体导电层; 第二半导体层上的透明层; 和透明层上的第二电极。

20. 发明申请

US20080277686A1 Light emitting device and method for making the same 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：US20080277686A1
公开(公告)日：2008-11-13
申请号：US11801201
申请日：2007-05-08
申请人： Tzong-Liang Tsai
发明人： Tzong-Liang Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L21/0237 , H01L21/0242 , H01L21/0254 , H01L21/02658 , H01L33/007 , H01L33/22
摘要： A light emitting diode includes: an epitaxial substrate having a roughened side and formed with alternately disposed ridges and valleys at the roughened side, each of the ridges having a roughened surface that is formed with a dense concentration of alternately disposed pits and protrusions; and an epitaxial layered structure formed on and covering the ridges and the valleys of the epitaxial substrate. A method for making the light emitting diode involves forming the epitaxial substrate with the ridges and valleys prior to the formation of the epitaxial layered structure.
摘要翻译：发光二极管包括：具有粗糙面的外延基板，并且在粗糙化侧形成有交替设置的脊和谷，每个脊具有粗糙表面，其形成为具有交替设置的凹坑和突起的致密集中; 以及外延层叠结构，形成在外延基板的脊部和谷部上。制造发光二极管的方法包括在形成外延层状结构之前，用脊和谷形成外延衬底。

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