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11. 发明授权

US06861360B2 Double-sided polishing process for producing a multiplicity of silicon semiconductor wafers 有权
标题翻译：用于制造多个硅半导体晶片的双面抛光工艺
公开(公告)号：US06861360B2
公开(公告)日：2005-03-01
申请号：US10294846
申请日：2002-11-14
申请人： Guido Wenski , Thomas Altmann , Anton Huber , Alexander Heilmaier
发明人： Guido Wenski , Thomas Altmann , Anton Huber , Alexander Heilmaier
IPC分类号： B24B37/04 , B24B49/16 , C30B29/06 , C30B33/00 , H01L21/302 , H01L21/304 , H01L21/306
CPC分类号： H01L21/02024 , B24B37/0056 , B24B37/042 , B24B37/08 , B24B49/16
摘要： A silicon semiconductor wafer with a diameter of greater than or equal to 200 mm and a polished front surface and a polished back surface and a maximum local flatness value SFQRmax of less than or equal to 0.13 μm, based on a surface grid of segments with a size of 26 mm×8 mm on the front surface, wherein the maximum local height deviation P/V(10×10)max of the front surface from an ideal plane is less than or equal to 70 nm, based on sliding subregions with dimensions of 10 mm×10 mm. There is also a process for producing a multiplicity of silicon semiconductor wafers by simultaneous double-side polishing between in each case one lower polishing plate and one upper polishing plate, which rotate, are parallel to one another and to which polishing cloth has been adhesively bonded, while a polishing agent, which contains abrasives or colloids, is being supplied, with at least 2 μm of silicon being removed, wherein a predetermined proportion of the semiconductor wafers is at least partially polished using a lower polishing pressure, and a further proportion of the semiconductor wafers is polished using a higher polishing pressure.
摘要翻译：具有大于或等于200mm的直径的硅半导体晶片和抛光的前表面和抛光后表面以及小于或等于0.13μm的最大局部平坦度值SFQRmax，基于具有尺寸为26mm×8mm的前表面，其中，从理想平面的前表面的最大局部高度偏差P / V（10×10）max小于或等于70nm，基于尺寸为10mm×10mm的滑动子区域。还有一种通过在每种情况下同时进行双面抛光来生产多个硅半导体晶片的方法，其中一个下抛光板和一个上抛光板相互平行，并且抛光布已经被粘合到该抛光板上同时提供含有研磨剂或胶体的抛光剂，除去至少2个微米的硅，其中使用较低的抛光压力至少部分地抛光半导体晶片的预定比例，另外一部分使用更高的抛光压力来抛光半导体晶片。

12. 发明授权

US06583050B2 Semiconductor wafer with improved flatness, and process for producing the semiconductor wafer 有权
公开(公告)号：US06583050B2
公开(公告)日：2003-06-24
申请号：US10218006
申请日：2002-08-13
申请人： Guido Wenski , Thomas Altmann , Ernst Feuchtinger , Willibald Bernwinkler , Wolfgang Winkler , Gerhard Heier
发明人： Guido Wenski , Thomas Altmann , Ernst Feuchtinger , Willibald Bernwinkler , Wolfgang Winkler , Gerhard Heier
IPC分类号： H01L214763
CPC分类号： H01L21/02024 , B24B37/042 , B24B37/08
摘要： A semiconductor wafer has a front surface and a back surface and flatness values based on partial areas of a surface grid on the front surface of the semiconductor wafer, which has a maximum local flatness value SFQRmax of less than or equal to 0.13 &mgr;m and individual SFQR values which in a peripheral area of the semiconductor wafer do not differ significantly from those in a central area of the semiconductor wafer. There is also a process for producing this semiconductor wafer, wherein the starting thickness of the semiconductor wafer is 20 to 200 &mgr;m greater than the thickness of the carrier and the semiconductor wafer is polished until the end thickness of the semiconductor wafer is 2 to 20 &mgr;m greater than the thickness of the carrier.

13. 发明申请

US20070204732A1 Machine tool and method for cutting machining of work pieces 有权
标题翻译：用于切削加工件的机床和方法
公开(公告)号：US20070204732A1
公开(公告)日：2007-09-06
申请号：US11706008
申请日：2007-02-13
申请人： Achim Feinauer , Thomas Altmann , Pavel Blazek
发明人： Achim Feinauer , Thomas Altmann , Pavel Blazek
IPC分类号： B23B3/00 , B23B7/00
CPC分类号： B23B3/065 , B23B3/30 , Y10T29/5109 , Y10T29/5114 , Y10T82/25 , Y10T82/2521 , Y10T409/305824 , Y10T483/165
摘要： A machine tool for cutting machining of work pieces has a tool spindle and a work piece spindle. The work piece spindle is a hollow spindle having a through hole extending through the spindle and a holding mechanism for holding a work piece at one end. The work piece held in the holding mechanism can be machined through the through hole by means of a machining tool held in the tool spindle.
摘要翻译：用于切削加工件的机床具有刀具主轴和工件主轴。工件主轴是具有延伸穿过主轴的通孔的中空主轴和用于在一端保持工件的保持机构。保持在保持机构中的工件可以通过保持在工具主轴中的加工工具通过通孔加工。

14. 发明授权

US06899762B2 Epitaxially coated semiconductor wafer and process for producing it 失效
标题翻译：外延涂层半导体晶片及其制造方法
公开(公告)号：US06899762B2
公开(公告)日：2005-05-31
申请号：US10402171
申请日：2003-03-28
申请人： Guido Wenski , Wolfgang Siebert , Klaus Messmann , Gerhard Heier , Thomas Altmann , Martin Fürfanger
发明人： Guido Wenski , Wolfgang Siebert , Klaus Messmann , Gerhard Heier , Thomas Altmann , Martin Fürfanger
IPC分类号： C30B29/06 , B24B37/04 , H01L21/02 , H01L21/205 , H01L21/304 , H01L21/306 , C30B25/14
CPC分类号： B24B37/08 , B24B37/042 , H01L21/02024 , H01L21/30625 , Y10T428/24355
摘要： A semiconductor wafer with a front surface and a back surface and an epitaxial layer of semiconducting material deposited on the front surface. In the semiconductor wafer, the epitaxial layer has a maximum local flatness value SFQRmax of less than or equal to 0.13 μm and a maximum density of 0.14 scattered light centers per cm2. The front surface of the semiconductor wafer, prior to the deposition of the epitaxial layer, has a surface roughness of 0.05 to 0.29 nm RMS, measured by AFM on a 1 μm×1 μm reference area. Furthermore, there is a process for producing the semiconductor wafer. The process includes the following process steps: (a) as a single polishing step, simultaneous polishing of the front surface and of the back surface of the semiconductor wafer between rotating polishing plates while an alkaline polishing slurry is being supplied, the semiconductor wafer lying in a cutout of a carrier whose thickness is dimensioned to be 2 to 20 μm less than the thickness of the semiconductor wafer after the latter has been polished; (b) simultaneous treatment of the front surface and of the back surface of the semiconductor wafer between rotating polishing plates while a liquid containing at least one polyhydric alcohol having 2 to 6 carbon atoms is being supplied; (c) cleaning and drying of the semiconductor wafer; and (d) deposition of the epitaxial layer on the front surface of the semiconductor wafer produced in accordance with steps (a) to (c).
摘要翻译：具有前表面和后表面的半导体晶片和沉积在前表面上的半导体材料的外延层。在半导体晶片中，外延层具有小于或等于0.13μm的最大局部平坦度值SFQR＆lt; SUB＆lt;＆lt; SUB＆lt; SUB＆gt;和最大密度为0.14散射光中心/ cm 2 。在沉积外延层之前，半导体晶片的前表面在1mum×1mum参考区域上通过AFM测量的表面粗糙度为0.05至0.29nm RMS。此外，存在制造半导体晶片的工艺。该方法包括以下工艺步骤：（a）作为单个抛光步骤，在供应碱性抛光浆料的同时，在旋转的抛光板之间同时抛光半导体晶片的表面和背面，半导体晶片位于载体的切口，其尺寸设定为比后半导体晶片抛光后的半导体晶片的厚度小2〜20μm; （b）在供给包含至少一种含有2〜6个碳原子的多元醇的液体的同时处理旋转研磨板之间的半导体晶片的前表面和后表面; （c）清洗和干燥半导体晶片; 以及（d）在根据步骤（a）至（c）制造的半导体晶片的前表面上沉积外延层。

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